Effects of Samarium on the Properties of the Anodic Pb（Ⅱ） Oxides Film Formed on Pb in Sulfuric Acid Solution

The effects of samarium on the properties of the anodic Pb(II) oxides films formed on lead at 0.9 V (vs. Hg/Hg₂SO₄) in 4.5 mol/L H₂SO₄ solution were studied using linear sweep voltammetry (LSV), electrochemical impedance spectroscopy (EIS) and scanning electron micrographs (SEM). The experimental results show that adding Sm to lead metal can inhibit the growth of the Pb(II) oxides film effectively, and reduce the resistance of the PbO oxides film obviously. The addition of Sm increases the porosity of the anodic film, which may cause the increase of the ionic conductance produced by the interstitial liquid among the PbO particles in the film and lead to the decrease of the resistance of the anodic film.     

阳极Pb(II)氧化物膜的阴极还原

采用X射线衍射、光电流谱、线性电位扫描和开路电位衰退等方法研究了Pb电 极在0.9 V(vs.Hg/Hg_2SO_4), 4.5 MOL/l h_2so_4溶液中生长2 h所得的阳极Pb (II)氧化物膜的阴极还原行为。实验结果表明;阳极Pb(II)氧化物膜主要由PbO微 粒和PbO·PbSO_4微粒组成,微粒间液膜可供离子输运;在LSV负向扫描过程中,阳 极Pb(II)氧化物膜是按溶解－沉积机理还原的,首先PbO微粒借助该微粒间的液膜 还原为金属铅,而待PbO微粒表面层转化的金属铅与PbO·PbSO_4微粒接触后,则 PbO·PbSO_4就和PbO一起还原,而以PbO·PbSO_4的还原进程略快。     

铈降低在硫酸溶液中生长的阳极Pb(II)氧化物膜的电阻的研究

应用电化学阻抗频谱法、线性电位扫描法和光电流技术研究了在4.5 mol· dm~(-3) H_2SO_4溶液中Pb-1%(at.)Ce（简称Pb-1Ce）合金在0.9 V (vs. Hg/Hg_2SO_4电极)生长的阳极Pb(II)氧化物膜的电阻较纯铅的低的原因。实验结 果表明,Ce阻抑阳极Pb(II)氧化物膜的生长并增加其孔率,从而降低其电阻。     

Resistance of the anodic PbO film formed in sulfuric acid solution

The resistance of the anodic PbO film fonned on lead at 0.9 V (vs. Hg/Hg2SO4) in 4.5 mol/dm3 H2SO4 was measured using alternating-current impedance method. The resistance of the anodic PbO film was found to be close to that of the interstitial liquid among the PbO particles in the film, suggesting that the interstitial liquid may serve as the major passage for ion transportation during the film growth.     

铅锡合金在硫酸溶液中生长阳极Pb(Ⅱ)氧化物膜的机理

用交流阻抗、开路电位衰退及线性电位扫描等方法在0.9V(vs.Hg/Hg₂SO₄)和4.5mol/LH₂SO₄溶液中,研究了铅及Pb-Sn合金电极上所生长的阳极氧化物膜.实验结果表明,阳极膜由溶解-沉淀机理控制生长,膜中微粒间为液膜,借助液膜作为离子通道可使膜中微粒发生阳极反应,锡有利于膜中PbO微粒表层阳极氧化为PbO^1+x(0相似文献   

铈对铅钙锡合金在硫酸溶液中阳极行为的影响

应用循环伏安法研究了Pb - 0 .5at %Ca - 1 .5at %Sn和含Ce的Pb - 0 .5at%Ca - 1 .5at%Sn合金电极在 4.5mol·dm- 3H2 SO4溶液中和 0 .6～ 1 .4V(vs .Hg/Hg2 SO4电极 )电位范围内的电化学特性 ,并采用线性电位扫描法和交流伏安法分别研究了上述合金在相同溶液中以 0 .9V(vs .Hg/Hg2 SO4电极 )生长的阳极Pb(Ⅱ )膜增长率和膜的阻抗实数部分 (Z’)变化 .结果表明 ,在铅合金中添加Ce对阳极Pb(Ⅱ )膜的生长有显著的抑制作用并降低铅阳极膜的Z’ .以上述两种合金作为正极板栅制作的铅蓄电池 ,含Ce的Pb Ca Sn合金的深充放循环性能明显优于Pb Ca Sn合金 .     

电化学方法分析铅阳极膜的相组成

本文提出使用线性电位扫描和电位衰退定性和定量分析铅在4.5mol·dm^-^3H2SO4(30℃)中形成的阳极膜的相组成并与现场X射线衍射, 原子吸收光谱, 阳极溶出等法比较。结果表明电位扫描伏安曲线的峰电位和电位扫描至峰电位左右时电极开路后, 所得的稳定电位可用于阳极膜相组成的定性分析, 电位扫描伏安电线电流峰的面积可用于阴极膜相组成的定量分析。本文的阳极膜由PbO·PbSO4, PbO2和PbOn(2>n>1)组成, 以PbO·PbSO4为主要成份。     

铅锑合金在硫酸溶液中的阳极膜IV.方波电位对阳极膜生长的影响

The effects of sq. wave potential on the growth rate of the anodic films on Pb-7 Sb and Pb-5 Sb-0.2 As in 4.5 mol/dm3 H2SO4 at 30?were studied by a cathodic linear potential sweep method. By applying the sq. wave potential with period of 3600 s, the potentials of the lead alloys were cycled between that corresponding to the charged conditions of a Pb-acid battery (3 different charge potentials were studied: 1.4, 1.3 and 1.2 V vs. Hg/Hg2SO4, resp.) and that to the discharged condition (1.0 V). The anodic films contain grains with many voids among them as observed with SEM. The surface layer of the grain is PbO2, however, the major constituent of the grain is probably PbO.PbSO4. The relation between the quantity of electricity used to form PbO.PbSO4 and the no. of charges is linear for a certain no. of charge-discharge cycles. The conductance of the film is mainly due to the high conductivity of the PbO2 boundary layers of the grains, especially when the grains are in close contact with one another under pressure.     

铅铈和铅钙锡合金阳极腐蚀膜的性能研究

利用叠加交流伏安法、线性电位扫描法、交流阻抗技术和XPS研究了铅铈合金和铅钙锡合金在阳极1.28 V, 4.5 mol/L的硫酸溶液中所形成的阳极腐蚀膜. 结果表明: 稀土铈能抑制阳极膜中高阻抗的Pb(II)化合物的生长, 降低腐蚀膜的阻抗, 并增加膜的孔隙率. 同时可以提高合金的析氢过电位, 有利于电池免维护性能的提高.     

Pb及Pb-7w/O Sb合金在氧析出电位区生长的阳极膜

分别测量了Pb及Pb-7w/0Sb在4.5mol.dm^-^3H^2SO~4(30℃)中于1.3和1.5V(vs.Hg/Hg~2SO~4/4.5mol.dm^-^3H^2SO~4)下在不同时间生长的阳极膜的交流阻抗谱, 并使用线性电位扫描法分析了上述阳极膜的相组成。讨论了上述阳极膜进行的电化学反应的机理, 并据此提出它们的等效电路。实验结果表明上述阳极膜的真实表面积随生长时间而增加, 该膜多孔, 主要由外层为PbO~2的PbO.PbSO~4微粒组成, 锑能显著抑制PbO~2的生长, 特别是在1.3V时。     

阳极二氧化铅膜的阴极还原为硫酸铅的机理

应用旋转环盘电极, 和静止电极线性电位扫描法(LSV)研究铅上阳极PbO~2膜的阴极还原为PbSO~4的机理。实验结果表明相应于Pb盘上阳极膜中PbO~2还原时所产生的Pb-7w/oSb环电流是原先PbO~2膜生长时析出的氧扩散入膜中以及膜内的PbO~2微粒中的品种逸出而被还原所致。无可溶性中间体可被检出。扫速对静止Pb上阳极膜中PbO~2的LSV法还原的影响符合薄膜反应的规律。本文提出了上述反应机理。     

铅镧和铅钐合金在硫酸溶液中生长的阳极膜性质的研究

应用交流伏安法和线性电位扫描法研究了Pb ,Pb 1.0at%La和Pb 1.0at%Sm电极在硫酸溶液中以 0 .9V(vs .Hg/Hg2 SO4 )生长的阳极Pb(Ⅱ )膜增长率和膜的阻抗实部变化 ,并采用循环伏安法研究了它们在 0 .6～ 1.6V(vs.Hg/Hg2 SO4 )间的循环伏安特性 ,结果表明 :在铅中添加Sm有利于抑制铅的阳极腐蚀和降低阳极Pb(Ⅱ )膜的阻抗 ,La亦可降低阳极Pb(Ⅱ )膜的阻抗 ,但其作用不如Sm明显     

锑对在硫酸溶液中形成的阳极Pb(Ⅱ)氧化物膜的半导体性质的影响Ⅲ. 交流阻抗法研究阳极Sb~2O~3膜

应用交流阻抗方法研究锑在0.005mol.dm^-^3SO~4+0.5mol.dm^-^3Na~2So~4溶液(30℃)中以0.9V(vs.Hg/Hg~2SO~4/0.005mol.dm^3SO~4)生长3h的阳极Sb~2O~3膜的半导体性质.从Mott-schottky曲线可知.此膜 为n型半导体.平带电位为-0.34v(vs.Hg/Hg~2SO~4/0.005mol.dm^-^3SO~4).施主密度为4.0×19^1^9cm^-^3.讨论了锑增加铅锑合金极PbⅡ氧化物膜施主密度的原因.     

硫酸溶液中铅阳极膜研究的几个问题（－）

基于铅酸电池的实际应用以及对铅本身电化学行为的兴趣,人们对铅及其合金在硫酸溶液中形成的阳极膜,已做了大量的研究￣［１～４］。其三大进展为：Ｆｌｅｉｓｃｈｍａｎｎ与Ｔｈｉｒｓｋ￣［５］提出成核与生长机理来解释β－ＰｂＯ＿２的形成;Ｐａｖｌｏｖ￣［６］采用光电化学方法研究ＰｂＯ电位区的固相反应;Ｒｕｅｔｓｃｈｉ￣［７］提出阳极膜最外层ＰｂＳＯ＿４为半透膜,保证膜内部的碱性环境。然而总的来说,各个研究者对铅阳极膜缺乏统一的认识。其主要原因是铅阳极膜相组成复杂,至今尚未完全确定。有鉴于此,我们将陆续介绍本小组对于硫酸溶液中铅阳极膜研究的几个问题所持的观点。     

铅上阳极硫酸铅膜的还原过程

采用线性电位扫描法、电位阶跃法, 结合交流阻抗跟踪对铅在4.5mol.dm^-^3H2SO4中-0.6V(vs. Hg/Hg2SO4/4.5mol.dm^-^3H2SO4)极化20min形成的阳极硫酸铅膜的阴极还原进行研究。实验结果表明该膜大部分能被还原, 其中的硫酸铅颗粒先在表面按扩散控制下的三维瞬时成核与生长机理被还原, 然后Pb^2^+自颗粒内径向扩散至已生成的铅层表面上进行还原。颗粒中微粒间的液膜为离子输运的主要途径。     

The effect of impurities Pb,Bi, and PbO on erosion properties of Lead-Bismuth Eutectic alloy on Fe3O4 oxide film by first principle calculations

The first-principle calculation was performed to study the effect of impurities Pb, Bi, and PbO on erosion properties of liquid lead-bismuth eutectic alloy on the metal oxide (Fe₃O₄) and its surfaces. We found that whether in the bulk or on the surface of Fe₃O₄ the formation energy by substitution of Fe with Bi is slightly larger than that with Pb substitution and the formation energy by substitution of Fe with PbO is much larger than those with Pb and Bi, indicating that PbO has weaker corrosion potential than Pb/Bi. The calculation results show that a tetrahedral site in Fe₃O₄ should be the weakest position where Fe₃O₄ is attacked by these exotic impurities. The corrosion process on the oxide film will be initialized at that position. It can be seen that for the doping case the dissociation energy of Fe atom in the (110) surface has the smallest value, a medium value in (100) surface, and the largest value in (111) surface. Correspondingly, the corrosion resistance of doping Fe₃O₄ film in (110) surface is the weakest one among these surfaces. For the doping-free case, the (100) surface has the weakest corrosion resistance. By comparing the doping case with no-doping case it can be seen that the impurities of Pb, Bi, and PbO will weaken the corrosion resistance of Fe₃O₄ film further. The doping has a negative impact on the stability of the structure and on the corrosion resistance of Fe₃O₄ film. From present results, it is also seen that the replacement of Fe in Fe₃O₄ by multiple impurities is more likely to occur than the replacement of only single impurity.     

Surface complexation of Pb(II) on amorphous iron oxide and manganese oxide: spectroscopic and time studies

Hydrous Fe and Mn oxides (HFO and HMO) are important sinks for heavy metals and Pb(II) is one of the more prevalent metal contaminants in the environment. In this work, Pb(II) sorption to HFO (Fe(2)O(3) x nH(2)O, n=1-3) and HMO (MnO(2)) surfaces has been studied with EXAFS: mononuclear bidentate surface complexes were observed on FeO(6) (MnO(6)) octahedra with PbO distance of 2.25-2.35 Angstrom and PbFe(Mn) distances of 3.29-3.36 (3.65-3.76) Angstrom. These surface complexes were invariant of pH 5 and 6, ionic strength 2.8 x 10(-3) to 1.5 x 10(-2), loading 2.03 x 10(-4) to 9.1 x 10(-3) mol Pb/g, and reaction time up to 21 months. EXAFS data at the Fe K-edge revealed that freshly precipitated HFO exhibits short-range order; the sorbed Pb(II) ions do not substitute for Fe but may inhibit crystallization of HFO. Pb(II) sorbed to HFO through a rapid initial uptake ( approximately 77%) followed by a slow intraparticle diffusion step ( approximately 23%) resulting in a surface diffusivity of 2.5 x 10(-15) cm(2)/s. Results from this study suggest that mechanistic investigations provide a solid basis for successful adsorption modeling and that inclusion of intraparticle surface diffusion may lead to improved geochemical transport depiction.     

铅电极在硫酸溶液中的光电化学行为

研究了铅电极在阳极氧化过程中光响应的产生机制。结果表明，Ｐｂ电极在光照氧化时存光活化过程，且光经过程须在电位高于０Ｖ时才能发生。采用现场测量光电压技术研究了Ｐｂ电极在硫酸溶液中的恒电流极化过程。     

酸性介质中碘离子在铂电极上的电化学氧化行为

采用循环伏安法研究了酸性介质中碘离子在铂电极上不同电位区间, 不同酸度下的电化学反应行为. 结果表明, 当极化电位较低(小于0.6 V(vs Hg/Hg2SO4))时, 碘离子在铂电极上发生2I--2e→I2电氧化反应, 反应产物通过I2+I-=I-3被进一步溶解, 整个反应属于E-C(electrochemical-chemical)模式. 电氧化过程中可以形成碘膜, 其也可以被碘离子溶解. 当极化电位升高至0.6 V(vs Hg/Hg2SO4)或以上时, 碘离子会直接电氧化为高价态碘化合物, I-+3H2O→IO-3+6H++6e, 而析出的碘膜并不发生再氧化反应; 在电化学还原过程中, 出现了两个还原峰, 分别对应于I2、I-3的还原反应; 在无碘膜时, 碘离子电氧化过程受溶液中碘离子的液相扩散步骤控制; 碘膜形成后, 主要受碘膜中碘离子的固相扩散控制; 酸度对于碘离子的电化学氧化过程有很大的影响, 其线性极化曲线的起峰电位及电流峰值电位均随酸浓度升高而负移.     

Effect of Sb on the properties of anodic Pb(Ⅱ) oxide film formed in alkaline solution

The composition and properties of the anodic films formed on Pb and Pb-3at.%Sb alloy at -0.10 V (vs. Hg/HgO) for 2.5 h in 0.1 mol.dm-3 NaOH solution (25℃) were investigated by cyclic voltammetry, linear sweep voltammetry, open circuit decay curve, photocurrent technique, X-ray diffraction (XRD) and scanning electron microscopy (SEM). It was found that the anodic film formed oh Pb mainly consists of t-PbO, while that on Pb-3at.%Sb consists of o-PbO, t-PbO and a small amount of orthorhombic Sb2O3. The dominant component of the film anodically grown on Pb-3at.%Sb for less than 5 min is o-PbO, however, t-PbO is the major component of the anodic film formed for 1 h or longer. It is established that Sb suppresses the growth of t-PbO. The anodic film formed on Pb-3at.%Sb is less porous than that on Pb. The bandgap energies of t-PbO and o-PbO in the films were determined by photocurrent measurements to be 1.83-1.84 eV and 2.60 eV, respectively.