Hydrogen desorption kinetics from the Si(1-x)Gex(100)-(2x1) surface

We study the influence of germanium atoms upon molecular hydrogen desorption energetics using density functional cluster calculations. A three-dimer cluster is used to model the Si((1-x))Ge(x)(100)-(2x1) surface. The relative stabilities of the various monohydride and clean surface configurations are computed. We also compute the energy barriers for desorption from silicon, germanium, and mixed dimers with various neighboring configurations of silicon and germanium atoms. Our results indicate that there are two desorption channels from mixed dimers, one with an energy barrier close to that for desorption from germanium dimers and one with an energy barrier close to that for desorption from silicon dimers. Coupled with the preferential formation of mixed dimers over silicon or germanium dimers on the surface, our results suggest that the low barrier mixed dimer channel plays an important role in hydrogen desorption from silicon-germanium surfaces. A simple kinetics model is used to show that reasonable thermal desorption spectra result from incorporating this channel into the mechanism for hydrogen desorption. Our results help to resolve the discrepancy between the surface germanium coverage found from thermal desorption spectra analysis, and the results of composition measurements using photoemission experiments. We also find from our cluster calculations that germanium dimers exert little influence upon the hydrogen desorption barriers of neighboring silicon or germanium dimers. However, a relatively larger effect upon the desorption barrier is observed in our calculations when germanium atoms are present in the second layer.     

Initial oxidation and hydroxylation of the Ge(100)-2 x 1 surface by water and hydrogen peroxide

We use density functional theory to investigate the surface chemistry of initial oxidation and hydroxylation of the Ge(100)-2 x 1 surface by water and hydrogen peroxide. Comparison of the reaction of water on the Si(100)-2 x 1 and Ge(100)-2 x 1 surfaces shows that the kinetics of oxidation of the Ge(100)-2 x 1 surface with water is slower. Our calculations also show that oxidation products on the Ge(100)-2 x 1 surface are less thermodynamically stable than on Si. We also investigate two competing dissociation reactions of H2O2 on the Ge(100)-2 x 1 surface. We find that dissociative adsorption via cleavage of the OH bond is less exothermic than OO dissociation. Furthermore, interdimer OO dissociation has a lower activation barrier than interdimer or intradimer OH dissociation, although interdimer dissociation products are found to be less stable compared than those formed from intradimer dissociation reactions. Finally, we find that the oxidation products formed from hydrogen peroxide are more stable than those formed from water.     

Reassessment of the molecular mechanisms for H2 thermal desorption pathways from Si(1-x)Gex(001)-(2x1) surfaces

One of the aims of temperature-programmed desorption experiments is to facilitate identification of molecular pathways for desorption. The authors provide a rigorous assessment of the difficulty of doing this for H(2)/Si((1-x))Ge(x)(100)-(2x1). An extensive series of density functional calculations using both cluster and slab methods is performed. The resulting desorption barriers are used to compute thermal desorption spectra. A mean-field approximation is used to treat the populations of the various adsites present on the surface. The authors find a number of significant results. First, slab and cluster calculations do not appear to predict consistent differences in desorption barriers between intradimer and interdimer channels. Second, they find that a germanium atom affects the desorption barrier significantly only if it is present at the adsite. A germanium atom adjacent to an adsite or in the second layer influences the desorption barrier negligibly. Both cluster and slab calculations consistently predict a decrease of approximately 0.3-0.4 eV per germanium atom at the adsite. Third, current analysis of thermal desorption spectra in the literature, although yielding good fits to experimental data, is not rigorous. The authors' calculated spectra can be fitted rather well by assuming, as in current analysis of experimental data, three independent second-order channels, even though the underlying molecular pathways used to calculate the spectra are considerably different. Fourth, the authors' results highlight the importance of treating the rearrangement of hydrogen and germanium atoms at the surface during the thermal desorption process. This is generally not taken into account in kinetics modeling of desorption spectra.     

Desorption related to adsorption of hydrogen via detailed balance on the Si(1 0 0) surfaces

Recent progress on desorption and adsorption dynamics of hydrogen (deuterium) on monohydride and dihydride Si(1 0 0) surfaces is reviewed and discussed. The dynamics experiments reveal that the desorption dynamics of hydrogen is well related to the adsorption dynamics via detailed balance. Dependence of time-of-flight (TOF) distributions of desorbed molecules on H(D) coverage is noticed to be important in understanding the kinetics mechanism of the adsorption/desorption reactions of hydrogen on the Si(1 0 0) surface. The desorption dynamics varies from the situation of strongly translational heating to the other situation of less translational heating with D coverage. This trend seems to be consistent with the 2H/3H/4H interdimer mechanism. However, despites by far the richest 4H configuration at high H coverage, the 2H desorption prevails over the 4H desorption already at 0.8 ML. To reconcile this unexpected desorption kinetics, a diffusion-promoted desorption mechanism is proposed. Height of the adsorption barriers for the 2H and 3H pathways could be reduced by the H-atom diffusion along the Si dimer rows, but that for the 4H pathway could not be the case because of no capability of diffusion on the H saturated surface. The desorption dynamics of hydrogen from the (3 × 1) dihydride surface is also reviewed and compared with the case on the monohydride surface. The sticking coefficients of hydrogen molecules onto the monohydride surfaces are evaluated from the TOF curves and found to be strongly activated by the kinetic energy. Not only the degrees of freedom of the molecules but also the vibrational degrees of freedom of substrate Si atoms determine the barrier height for adsorption. The desorption dynamics of hydrogen from the monohydride and dihydride surfaces appears to be quite similar, but the dynamics of substrate Si atoms is expected to be quite dissimilar between the two desorption pathways.     

Initial nitridation of the Ge(100)-2 x 1 surface by ammonia

The reaction of ammonia (NH(3)) on the Ge(100)-2 x 1 surface is investigated using density functional theory (DFT). We find that NH(3) adsorbs molecularly onto Ge(100)-2 x 1 via the formation of a dative bond. The calculations also show that, unlike Si(100)-2 x 1, the activation barrier for subsequent dissociation of NH(3) adsorbed on Ge(100)-2 x 1 is higher than that of reversible desorption, which indicates that NH(3) has a low reactive sticking probability on the Ge(100)-2 x 1 surface. We also predict that nitrogen insertion into the Ge-Ge dimer requires NH(3) overexposure because the activation barrier for NH(2) insertion into the Ge-Ge dimer is significantly above the entrance channel. The nitridation reaction pathway results in the N-H bridge-bonded state, which is found to be 17.4 kcal/mol more stable than the reactants. We find that the reactions of NH(3) on the Ge(100)-2 x 1 surface generally involve higher activation barriers and less stable intermediates than the analogous reactions on the Si(100)-2 x 1 surface.     

Hydrogen atom mediated Stone-Wales rearrangement of pyracyclene: a model for annealing in fullerene formation

We have investigated the Stone-Wales (SW) rearrangement of pyracyclene (C(14)H(12)) using quantum mechanical molecular modeling. Of particular interest in this study is the effect of an added hydrogen atom on the barriers to SW rearrangement. Hydrogen atoms are found in high abundance during combustion, and their effect upon isomerization of aromatic compounds to more stable species may play an important role in the combustion synthesis of fullerenes. We have calculated the barriers for the SW rearrangement in pyracyclene using density functional theory B3LYP/6-31G(d) and B3LYP/6-311G(d,p). Two mechanisms have been investigated: (i) a mechanism with two identical transition states of C(1) symmetry and a cyclobutyl intermediate and (ii) a mechanism with one transition state containing an sp(3) carbon (J. Am. Chem. Soc. 2003, 125, 5572-5580; Nature 1993, 366, 665-667). We find that the barriers for these mechanisms are 120.0 kcal mol(-1) for the cyclobutyl mechanism and 130.1 kcal mol(-1) for the sp(3) mechanism. Adding a hydrogen atom to the internal bridge carbon atoms of pyracyclene reduces the barrier of the cyclobutyl mechanisms to 67.0 kcal mol(-1) and the sp(3) mechanism to 73.1 kcal mol(-1). The bonding of carbon atoms in pyracyclene is similar to those found in isomers of C(60), and the barriers are low enough so that these reactions can become significant during fullerene synthesis in flames. Adding hydrogen atoms to the external bridge atoms on pyracyclene produces a smaller reduction in the SW barrier and adding hydrogen atoms to nonbridge external carbon atoms results in no reduction of the barrier.     

Thermally activated mechanisms of hydrogen abstraction by growth precursors during plasma deposition of silicon thin films

Hydrogen abstraction by growth precursors is the dominant process responsible for reducing the hydrogen content of amorphous silicon thin films grown from SiH(4) discharges at low temperatures. Besides direct (Eley-Rideal) abstraction, gas-phase radicals may first adsorb on the growth surface and abstract hydrogen in a subsequent process, giving rise to thermally activated precursor-mediated (PM) and Langmuir-Hinshelwood (LH) abstraction mechanisms. Using results of first-principles density functional theory (DFT) calculations on the interaction of SiH(3) radicals with the hydrogen-terminated Si(001)-(2x1) surface, we show that precursor-mediated abstraction mechanisms can be described by a chemisorbed SiH(3) radical hopping between overcoordinated surface Si atoms while being weakly bonded to the surface before encountering a favorable site for hydrogen abstraction. The calculated energy barrier of 0.39 eV for the PM abstraction reaction is commensurate with the calculated barrier of 0.43-0.47 eV for diffusion of SiH(3) on the hydrogen-terminated Si(001)-(2x1) surface, which allows the radical to sample the entire surface for hydrogen atoms to abstract. In addition, using the same type of DFT analysis we have found that LH reaction pathways involve bond breaking between the silicon atoms of the chemisorbed SiH(3) radical and the film prior to hydrogen abstraction. The LH reaction pathways exhibit energy barriers of 0.76 eV or higher, confining the abstraction only to nearest-neighbor hydrogens. Furthermore, we have found that LH processes compete with radical desorption from the hydrogen-terminated Si(001)-(2x1) surface and may be suppressed by the dissociation of chemisorbed SiH(3) radicals into lower surface hydrides. Analysis of molecular-dynamics simulations of the growth process of plasma deposited silicon films have revealed that qualitatively similar pathways for thermally activated hydrogen abstraction also occur commonly on the amorphous silicon growth surface.     

Solid-state interdiffusion mechanism in strained Si1–xGex/Si heterostructures

The interdiffusion in a low-strained Si_0.93Ge_0.07/Si epilayer was analyzed by double-crystal X-ray diffraction. The interdiffusion was characterized by a low diffusion barrier of 1.81 eV with a diffusion constant of 4.3 × 10⁻⁵ cm²/sec, which indicates correlation with the stacking fault generated by the homoepitaxial growth of the Si layer prior to the growth of the strained SiGe layer. At the very low-strained layer, the driving force causing the interdiffusion is the concentration gradient, and the mechanism is self-diffusion of Si. Furthermore, the interdiffusion mechanisms were classified into three groups, depending on the Ge mole fraction x. For x < 0.2, the diffusion process in the SiGe alloy is similar to a self-diffusion of Si atoms, while, for 0.2 < x < 0.4, Ge atoms prefer to be diffused out from the alloy. Finally, for x > 0.4, Si atoms can be diffused into the alloy. Received: 22 April 1997 / Accepted: 4 June 1997     

Kinetic Monte Carlo studies of hydrogen abstraction from graphite

We present Monte Carlo simulations on Eley-Rideal abstraction reactions of atomic hydrogen chemisorbed on graphite. The results are obtained via a hybrid approach where energy barriers derived from density functional theory calculations are used as input to Monte Carlo simulations. By comparing with experimental data, we discriminate between contributions from different Eley-Rideal mechanisms. A combination of two different mechanisms yields good quantitative and qualitative agreement between the experimentally derived and the simulated Eley-Rideal abstraction cross sections and surface configurations. These two mechanisms include a direct Eley-Rideal reaction with fast diffusing H atoms and a dimer mediated Eley-Rideal mechanism with increased cross section at low coverage. Such a dimer mediated Eley-Rideal mechanism has not previously been proposed and serves as an alternative explanation to the steering behavior often given as the cause of the coverage dependence observed in Eley-Rideal reaction cross sections.     

Cycloaddition reactions of acrylonitrile on the Si(100)-2 x 1 surface

Multi-reference as well as single-reference quantum mechanical methods were adopted to study the potential energy surface along three possible surface reaction mechanisms of acrylonitrile on the Si(100)-2 x 1 surface. All three reactions occur via stepwise radical mechanisms. According to the computed potential energy surfaces, both [4+2] and [2+2](CN) cycloaddition products resulting from the reactions of surface dimers with the C[triple bond]N of acrylonitrile are expected, due to the negligible activation barriers at the surface. Another possible surface product, [2+2](CC), requires a 16.7 kcal/mol activation energy barrier. The large barrier makes this route much less favorable kinetically, even though this route produces the thermodynamically most stable products. Isomerization reactions among the surface products are very unlikely due to the predicted large activation barriers preventing thermal redistributions of the surface products. As a result, the distribution of the final surface products is kinetically controlled leading to a reinterpretation of recent experiments. An intermediate Lewis acid-base type complex appears in both the [4+2] and [2+2](CN) cycloadditions entrance channels, indicating that the surface may act as an electrophile/Lewis acid toward a strong Lewis base substrate.     

Principle and mechanism of direct porphyrin metalation: joint experimental and theoretical investigation

The direct metalation of tetraphenylporphyrin with bare metal atoms (Co and Zn) was studied with X-ray photoelectron spectroscopy, scanning tunneling microscopy, and temperature-programmed reaction measurements on ordered monolayer films of the molecules adsorbed on a Ag(111) surface. The mechanism of this novel type of surface reaction was investigated using density functional theory (DFT) calculations for the related gas-phase reactions of the unsubstituted porphyrin with the metals Fe, Co, Ni, Cu, and Zn. The reaction starts with the formation of an initial complex, in which the metal atom is coordinated by the intact unreduced porphyrin. This complex resembles the sitting-atop complex proposed for porphyrin metalation with metal ions in solution. In two subsequent steps, the pyrrolic hydrogen atoms are transferred to the metal atom, forming H2, which is eventually released. The activation barriers of the H-transfer steps vary for the different metal atoms. DFT calculations suggest that metalations with Fe, Co, and Ni show two-state reactivity, while those with Cu and Zn proceed on a single potential energy surface. For metalation with Zn, we calculated a barrier of the first hydrogen transfer step of 32.6 kcal mol(-1), in good agreement with the overall experimental activation energy of 31 kcal mol(-1).     

First-principles study towards the reactivity of the Pd(111) surface with low Zn deposition

Methanol steam reforming (MSR) is an important means to produce hydrogen. While metal Pd shows no selectivity to MSR, PdZn alloy exhibits both high selectivity and activity towards this process. Recently a high temperature desorption peak of formaldehyde is observed when methanol is dosed onto Pd(111) surfaces on which 0.03-0.06 monolayer Zn is deposited. Strikingly such surface which is predominated by Pd atoms was suspected to be active for MSR. To determine the structure on which the high desorption peak is observed and its performance to MSR, we studied adsorption and dehydrogenation of formaldehyde on various models. It is demonstrated that the high desorption peak of CH(2)O may originate from the supported surface clusters. The calculated energy barriers of CH(2)O dehydrogenation show that while formaldehyde can decompose easily into formyl on the supported PdZn and Pd(2) clusters, this process is kinetically difficult on the surface Zn(3) clusters. It is further revealed that formation of dioxymethylene, the proposed precursor for CO(2) production, from formaldehyde and oxygen is feasible on the surface Zn cluster. Based on these calculations we predict that compared with 1:1 PdZn alloy, the activity of the Zn clusters to MSR is lower, though its selectivity may be higher.     

Ethylenediamine on Ge(100)-2 x 1: the role of interdimer interactions

We have investigated the reaction of the bifunctional molecule ethylenediamine on Ge(100)-2 x 1 using multiple internal reflection Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, and density functional theory calculations. Ethylenediamine exhibits different adsorption behavior than simple methylamines on the Ge(100)-2 x 1 surface. At low coverages, ethylenediamine undergoes dissociative chemisorption via an interdimer dual N-H dissociation reaction. As coverage increases, the N-H dissociation reaction is inhibited and formation of a Ge-N dative-bonded structure dominates.     

Formation of highly ordered organic monolayers by dative bonding: pyridine on ge(100)

The adsorption of pyridine onto the Ge(100) surface has been studied using both real-time scanning tunneling microscopy (STM) and ab initio pseudopotential density functional calculations. The results show that pyridine molecules adsorb on the electron-deficient down-Ge atoms of the Ge=Ge dimers via Ge-N dative bonding, with the pyridine ring tilted to the surface. The electron-rich up-Ge atoms remaining after adsorption of pyridine induce an asymmetric dimer row, which is mainly reconstructed to the c(4 x 2) structure. At pyridine coverage of 0.25 ML, the adsorbed pyridine molecules form a perfectly ordered monolayer. The entire Ge substrate underlying this organic monolayer rearranges into the c(4 x 2) structure.     

Inverse gas chromatographic investigation of the effect of hydrogen in carbon monoxide adsorption over silica supported Rh and Pt-Rh alloy catalysts, under hydrogen-rich conditions

Selective CO oxidation (SCO) has attracted scientific and technological interest due to its application to the operation of proton electrolyte membrane fuel cells (PEM-FCs). CO adsorption, being an elementary step of SCO, is studied over silica supported monometallic Rh and Rh0.50 + Pt0.50 alloy catalysts, under various hydrogen atmospheres, namely: 25% H2 + 75% He, 50% H2 + 50% He and 75% H2 + 25% He carrier gas mixture compositions. The investigation of CO adsorption is done by utilizing reversed-flow gas chromatography (RF-GC). As a result rate constants for the adsorption (k1), desorption (k(-1)) and irreversible CO binding (k2) over the studied catalysts as well as the respective activation energies are determined. The variation of the rate constants and the activation energies against the nature of the used catalyst (monometalic or alloy) and the amount of hydrogen in the carrier gas gives useful information for the selectivity as well as the activity of CO oxidation over group VIII noble metals. At low temperatures and under H2-rich conditions compatible with the operation of PEM fuel cells the activity of the monometallic and the alloy catalysts is expected to be similar, however the selectivity of Rh0.50 + Pt0.50 alloy catalyst is expected to be higher, making Pt-Rh alloy catalyst as a better candidate for CO preferential oxidation (PROX). The low energy barrier values found in the present work, most likely are referred to high surface amounts of CO. The desorption barriers determined are in any case much lower than the respective activation energies found for CO desorption in the absence of hydrogen indicating a H2-induced desorption, which can explain the observed in the literature rate enhancement of SCO oxidation.     

Hydrogen dissociation and diffusion on Ni- and Ti-doped Mg(0001) surfaces

It is well-known, both theoretically and experimentally, that alloying MgH(2) with transition elements can significantly improve the thermodynamic and kinetic properties for H(2) desorption, as well as the H(2) intake by Mg bulk. Here, we present a density functional theory investigation of hydrogen dissociation and surface diffusion over a Ni-doped surface and compare the findings to previously investigated Ti-doped Mg(0001) and pure Mg(0001) surfaces. Our results show that the energy barrier for hydrogen dissociation on the pure Mg(0001) surface is high, while it is small/null when NiTi are added to the surface as dopants. We find that the binding energy of the two H atoms near the dissociation site is high on Ti, effectively impeding diffusion away from the Ti site. By contrast, we find that on Ni, the energy barrier for diffusion is much reduced. Therefore, although both Ti and Ni promote H(2) dissociation, only Ni appears to be a good catalyst for Mg hydrogenation, allowing diffusion away from the catalytic sites. Experimental results corroborate these theoretical findings, i.e., faster hydrogenation of the Ni-doped Mg sample as opposed to the reference Mg- or Ti-doped Mg.     

Origin of nonlocal interactions in adsorption of polar molecules on Si(001)-2 x 1

Using density functional theory slab calculations, we have investigated (i) the origin of nonlocal interactions occurring in the adsorption of small polar molecules (H2O,NH3,CH3OH,CH3NH2) on the clean Si(001)-2 x 1 surface and (ii) the nonlocal effects on two-dimensional arrangement of adsorbates. Our results show the adsorption properties are significantly altered in the presence of adsorbates on an adjacent dimer along a row. We have identified that the coverage dependent behavior arises from a combination of (i) surface polarization change, (ii) adsorbate-induced charge delocalization, (iii) adsorbate-adsorbate repulsion, and (iv) hydrogen bonding. The nucleophilic-electrophilic molecular adsorption involves charge delocalization to neighboring dimers along a row, which in turn undermines molecular adsorption on the neighboring dimers. Nonlocal effects associated with polar interactions with neighboring dimers and adsorbates vary with adsorption system. While such polar interactions are unimportant in CH3OH adsorption, hydrogen bonding and adsorbate-adsorbate repulsion play an important role in determining the adsorption structures of H2O and NH3CH3NH2, respectively. In addition, the electrostatic attraction with the buckled-up Si atoms of adjacent dimers contributes to stabilization of H2O, NH3, and CH3NH2 adsorption. We also discuss kinetic effects on two-dimensional ordering of adsorbates, in conjunction with surface phase transition and adsorption-dissociation rates.     

Hydrogen adsorption on graphite (0001) surface: a combined spectroscopy-density-functional-theory study

The adsorption of H/D atoms on the graphite (0001) surface is investigated by means of both high-resolution electron-energy loss spectroscopy (HREELS) and periodic first-principle density-functional theory. The two methods converge towards two modes of adsorption: adsorption in clusters of about four hydrogen atoms and adsorption in pairs of atoms on contiguous carbon sites. The desorption energies estimated from the calculated dissociation energies range from 8 to 185 kJ mol(-1) leading to an estimated surface coverage at saturations of 30-44 at. %. These results are compared with previous thermal desorption spectroscopy results. New HREEL signal assignments are proposed based on quantum calculations.     

Quantum mechanical/molecular mechanical study on the mechanisms of compound I formation in the catalytic cycle of chloroperoxidase: an overview on heme enzymes

The formation of Compound I (Cpd I), the active species of the enzyme chloroperoxidase (CPO), was studied using QM/MM calculation. Starting from the substrate complex with hydrogen peroxide, FeIII-HOOH, we examined two alternative mechanisms on the three lowest spin-state surfaces. The calculations showed that the preferred pathway involves heterolytic O-O cleavage that proceeds via the iron hydroperoxide species, i.e., Compound 0 (Cpd 0), on the doublet-state surface. This process is effectively concerted, with a barrier of 12.4 kcal/mol, and is catalyzed by protonation of the distal OH group of Cpd 0. By comparison, the path that involves a direct O-O cleavage from FeIII-HOOH is less favored. A proton coupled electron transfer (PCET) feature was found to play an important role in the mechanism nascent from Cpd 0. Initially, the O-O cleavage progresses in a homolytic sense, but as soon as the proton is transferred to the distal OH, it triggers an electron transfer from the heme-oxo moiety to form water and Cpd I. This study enables us to generalize the mechanisms of O-O activation, elucidated so far by QM/MM calculations, for other heme enzymes, e.g., cytochrome P450cam, horseradish peroxidase (HRP), nitric oxide synthase (NOS), and heme oxygenase (HO). Much like for CPO, in the cases of P450 and HRP, the PCET lowers the barrier below the purely homolytic cleavage alternative (in our case, the homolytic mechanism is calculated directly from FeIII-HOOH). By contrast, the absence of PCET in HO, along with the robust water cluster, prefers a homolytic cleavage mechanism.     

Passive and active oxidation of Si(100) by atomic oxygen: a theoretical study of possible reaction mechanisms

Reaction mechanisms for oxidation of the Si(100) surface by atomic oxygen were studied with high-level quantum mechanical methods in combination with a hybrid QM/MM (Quantum mechanics/Molecular Mechanics) method. Consistent with previous experimental and theoretical results, three structures, "back-bond", "on-dimer", and "dimer-bridge", are found to be the most stable initial surface products for O adsorption (and in the formation of SiO(2) films, i.e., passive oxidation). All of these structures have significant diradical character. In particular, the "dimer-bridge" is a singlet diradical. Although the ground state of the separated reactants, O+Si(100), is a triplet, once the O atom makes a chemical bond with the surface, the singlet potential energy surface is the ground state. With mild activation energy, these three surface products can be interconverted, illustrating the possibility of the thermal redistribution among the initial surface products. Two channels for SiO desorption (leading to etching, i.e., active oxidation) have been found, both of which start from the back-bond structure. These are referred to as the silicon-first (SF) and oxygen-first (OF) mechanisms. Both mechanisms require an 89.8 kcal/mol desorption barrier, in good agreement with the experimental estimates of 80-90 kcal/mol. "Secondary etching" channels occurring after initial etching may account for other lower experimental desorption barriers. The calculated 52.2 kcal/mol desorption barrier for one such secondary etching channel suggests that the great variation in reported experimental barriers for active oxidation may be due to these different active oxidation channels.