共查询到20条相似文献,搜索用时 46 毫秒
1.
准电子概念是固体能带论的核心 .处于周期晶格中的电子 ,其电荷仍为e ,自旋仍是 1 2 ,但由于晶格周期场的影响 ,质量却不同于自由电子的me,而是表现为有效质量m .在超导体中 ,当库珀对被拆散时 ,准电子跨越能隙被激发到费米能级EF 以上 .准电子的寿命τ可以用光发射谱 (PES)的能量宽度ΔE表征 ,因为按照不确定性关系 ,τΔE≈ .高温超导铜氧化物的PES谱通常很宽 ,这表明准电子的寿命非常短 .加之 ,这种材料的赝能隙表现出强的各向异性 (在CuOCu键方向能隙宽 ,在转角 4 5°方向能隙降为零 ) ,对传统准电子概念提出了… 相似文献
2.
混价锰氧化物超巨磁电阻材料研究进展 总被引:5,自引:1,他引:4
综述了钙钛矿结构锰氧化物超巨磁电阻材料的研究进展,主要包括Jahn-Teler畸变、磁性、电阻率、热电势、霍尔效应、比热、热膨胀、电荷有序、中子衍射和非弹性散射、电子能谱,以及同位素效应等方面 相似文献
3.
4.
5.
掺杂稀土锰氧化物的巨磁电阻效应 总被引:3,自引:0,他引:3
介绍了掺杂稀土锰氧化物的巨磁电阻效应研究概况和最新进展,在综合目前实验和理论研究结果的基础上,对在掺杂稀土锰氧化物材料中引起巨磁电阻效应的物理机制进行了探讨,对这一材料的应用前景和需要做的工作进行了讨论。 相似文献
6.
7.
8.
介绍了利用ZDY型自动磁场成型机、电脑化X-Y记录仪、计算机、HSZ-1数字磁强计等仪器测量巨磁电阻材料磁电阻的方法,同时对低温的测量装置进行了研究。 相似文献
9.
10.
11.
12.
13.
本文将文献[6]导出的替代式合金电阻率公式应用于理想配比的完全有序A-15化合物,理论与实验的比较表明:尽管不同的A-15化合物低温电阻率温度依赖性的差别很大,其基本特征都可以在文献[6]的模型中得到理解。 相似文献
14.
The electrical resistivity of a hydrogenated LaNi5 thin film has been investigated as a function of temperature in vacuum and in hydrogen. While the film was heated in vacuum for the first time, the change in resistivity exhibited different characteristics during different ranges of temperatures due to the competition of two effects owing to the lattice scattering of conductive electrons and the number of them. The resistivity had a sharp drop near 600 K, which originates from the formation of high conducting lanthanum hydride and nickel due to a reaction between the dissolved hydrogen and LaNi5. The change in resistivity was not repeatable during the successive heating and cooling processes. When the film was heated under a hydrogen atmosphere, a drop in resistivity occurred near 700 K due to the reaction between LaNi5 and the hydrogen atmosphere. The film showed a linear temperature dependence of receptivity with completeness of the reaction. It was found that the reaction was irreversible. The film lost the ability of hydrogen absorption after the reaction, and it had a phase change from LaNi5 to LaH and Ni. This result was supported by X-ray diffraction patterns. 相似文献
15.
16.
本文在20°—300°K研究了室温载流子浓度2×1012—1×1020cm-3含硼或磷(砷)Si的电学性质。对一些p-Si样品用弱场横向磁阻法及杂质激活能法进行了补偿度的测定,并进行了比较。从霍尔系数与温度关系的分析指出,对于较纯样品,硼受主能级的电离能为0.045eV,磷施主能级为0.045eV,在载流子浓度为1018—1019cm-3时发现了费米简并,对载流子浓度为2×1017—1×1018cm-3的p-Si及5×1017—4×1018cm-3的n-Si观察到了杂质电导行为。从霍尔系数与电导率计算了非本征的霍尔迁移率。在100°—300°K间,晶格散射迁移率μ满足关系式AT-a,其中A=2.1×109,α=2.7(对空穴);或A=1.2×108,α=2.0(对电子)。另外,根据我们的材料(载流子浓度在5×1011—5×1020cm-3间),分别建立了一条电阻率与载流子浓度及电阻率与迁移率的关系曲线,以提供制备材料时参考之用。 相似文献
17.
18.
在氢气氛下合成了新化合物Ru2H4(CO)2(PPh3)4,建立了可至液氮温度的原位红外测试装置,在室温至液氮温度下进行了外多氢化合物的结构研究。发现RuT4(CO)PPh3)3在室温下会发生分子氢与原子氢的结构流变,Ru2H4(CO)(PPh3)4则随温度变化而出现桥氢与端氢的结构转化现象。 相似文献
19.
The electrical resistivity of a hydrogenated LaNi5 thin film has been investigated as a function of temperature in vacuum and in hydrogen. While the film was heated in vacuum for the first time, the change in resistivity exhibited different characteristics during different ranges of temperatures due to the competition of two effects owing to the lattice scattering of conductive electrons and the number of them. The resistivity had a sharp drop near 600 K, which originates from the formation of high conducting lanthanum hydride and nickel due to a reaction between the dissolved hydrogen and LaNi5. The change in resistivity was not repeatable during the successive heating and cooling processes. When the film was heated under a hydrogen atmosphere, a drop in resistivity occurred near 700 K due to the reaction between LaNi5 and the hydrogen atmosphere. The film showed a linear temperature dependence of receptivity with completeness of the reaction. It was found that the reaction was irreversible. The film lost the ability of hydrogen absorption after the reaction, and it had a phase change from LaNi5 to LaH and Ni. This result was supported by X-ray diffraction patterns. 相似文献