Temperature-Dependent Structure of Epitaxial （Ba,Sr）TiOa Films Grown on SrRuO3-Covered SrTiO3 Substrates

Growth dynamics of epitaxiai （Ba, Sr）TiO3 thin films deposited at different temperatures on SrRuO3/SrTiO3 substrates by pulsed laser deposition is investigated by transmission electron microscopy. The films exhibit a layered structure comprising sublayers with distinctive features in regard to the remaining strain, density of misfit dislocations and/or lattice defects, and growth habit. We correlate these temperature-dependent features with the predominant misfit-strain relaxation mechanisms for each one of the detected growth regimes. The thickness dependence of the film structure is discussed within the framework of the predictions for a kineticaily modified Stranski-Krastanov growth mode.     

Anomalous Magneto-Transport Properties of Epitaxial Single-Crystal Bi Films on Si（111）

Anomalous transport properties of 40-nm-thick single-crystal Bi（111） films grown on Si（111）-7 × 7 substrates is investigated. The magnetoresistance （MR） of the films in perpendicular magnetic field shows a regular positive behavior in the temperature range 2–300K, the MR in parallel field （B｜｜） displays a series of interesting features. Specifically, we observe a change of the MR （B｜｜） behavior from positive to negative when the temperature is below 10K. In the range 10–170 K, the MR （B｜｜） is negative in the investigated field of 9T. When T 〉 170 K, a positive MR appears in the high field regime. The low temperature MR（B｜｜） behavior in the parallel field can be understood by the competition between weak localization and weak anti-localization （WAL）. Furthermore, our results suggest that the WAL is dominated by the interface carriers.     

Structural, Morphology and Optical Properties of Epitaxial ZnO Films Grown on Al2O3 by MOCVD

Epitaxial ZnO films are grown on Al2O3 （0001） by the MOCVD method. These films are high quality wurtzite crystals with （0001） orientation. Big hexagonal crystallites （diameter from several decades to 100 μm） are found on the surface. Inside these crystallites, a stronger luminescence is observed compared with the plain area. Transmission electronic microscopy reveals that the film is thicker inside the hexagonal crystallites than the plain area, and some crystallites are not connected with each other and are slightly rotated with respect to their neighbours.     

Structure and Photoluminescence of Nano-ZnO Films Grown on a Si （100） Substrate by Oxygen- and Argon-Plasma-Assisted Thermal Evaporation of Metallic Zn

Nano-ZnO thin films were prepared by oxygen- and argon-plasma-assisted thermal evaporation of metallic Zn at low temperature, followed by low-temperature annealing at 300℃ to 500℃ in oxygen ambient. X-ray diffraction patterns indicate that the nano-ZnO films have a polycrystalline hexagonal wurtzite structure. Raman scattering spectra demonstrate the existence of interface layers between Zn and ZnO. Upon annealing at 400℃ for i h, the interface mode disappears, and photoluminescence spectra show a very strong ultraviolet emission peak around 381 nm. The temperature-dependent PL spectra indicate that the UV band is due to free-exciton emission.     

Defects in GaN Films Grown on Si（111） Substrates by Metal-Organic Chemical Vapour Deposition

We report the transmission-electron microscopy study of the defects in wurtzitic GaN films grown on Si(111) substrates with AlN buffer layers by the metal-organic chemical vapour deposition method. The In0.1 Ga0.9N/GaN multiple quantum well (MQW) reduced the dislocation density by obstructing the mixed and screw dislocations passing through the MQW. No evident reduction of the edge dislocations density by the MQW was observed. It was found that dislocations with screw component can be located at the boundaries of sub-grains slightly in-plane misoriented.     

Substrate Dependence of Properties of Sputtered ITO Films

High-quality indium-tin-oxide (ITO) films are deposited on p-type Czochralski silicon and 7059 Coming glass by direct-current magnetron sputtering at various temperatures. The structural, electrical and optical properties of the ITO films are investigated as functions of the substrate temperature. A comparison between the characteristics of the ITO films on silicon and Coming glass is presented. The results show that for the ITO film on silicon,the nucleation begins from room temperature; the resistivity reaches a maximum value at 75℃; the reflectivity increases with increasing temperature; when temperature is above 125℃, the ITO grows in a three-dimensional manner and forms a granular structure. However, for the ITO film on glass, it is still in an amorphous state at 75℃. Moreover, both the resistivity and the reflectivity decrease with increasing temperature. Above 125℃, the ITO grows in a two-dimensional manner and forms a domain structure.     

Structure Stability of LaAlO3 Thin Films on Si Substrates

A series of amorphous and single-crystalline LaAlO3 （LAO） thin films are fabricated by laser molecular-beam epitaxy technique on Si substrates under various conditions of deposition. The structure stability of the LAO films annealed in high temperature and various ambients is studied by x-ray diffraction as well as high-resolution transmission electron microscopy. The results show that the epitaxial LAO films have very good stability, and the structures of amorphous LAO thin films depend strongly on the conditions of deposition and post-annealing. The results reveal that the formation of LAO composition during the deposition is very important for the structure stability of LAO thin films.     

Comparisons of Structural and Optical Properties of ZnO films Grown on Sapphire and Si（001）

Zinc oxide films were grown on sapphire and Si(001) substrates by reactive electron beam evaporation at low substrate temperatures,Atomic force microscopy(AFM),x-ray diffraction(XRD),and photoluminescence excitation(PLE) are employed to characterize the as-grown films.The AFM measurements have shown that all of the ZnO films present pillar-like growth properties.but the dimensional uniformity of the ZnO crystal pillars grown on sapphire was better than that on Si(001),The XRD results indicated that the prepared ZnO films both on sapphire and Si(001) were all highly c-axis oriented.the linewidths of ZnO(002)are only 0.19 and 0.28,respectively,The PLE characterizations revealed the continum absorption of the samples grown on sapphire,However,in the PLE spectra of the ZnO films grown on Si(001) substrates,a broad peak appears at the high-energy region,which indicates the formation of ZnO quantum dot structures on Si(001).     

Temperature－Dependent Photoluminescence of ZnTe Films Grown on Si Substrates

ZnTe films have been prepared on Si substrates by metal-organic chemical vapour deposition (MOCVD), and the temperature-dependent photoluminescence (PL) properties were investigated. The near-band-edge (NBE) emission of the ZnTe sample at 83K shows an asymmetry line shape, which can be decomposed into two Gaus-siam lines labelled by FE and BE. Temperature-dependent PL intensity of the NBE peak shows two variation regions, and an expression with two dissociation channels fits well to the experimental data. The results of the temperature-dependent full width at half maximum (FWHM) and peak energy were well understood under the framework of the two-dissociation-channel model. That is, at low temperature, the emission from bound excitons governs the NBE peak, while above 157K, the free exciton emission becomes dominant gradually. A simple model with three energy levels was employed to describe the variation in emission intensity of BE and FE with temperature.     

Growth-Parameter Spaces and Optical Properties of Cubic Boron Nitride Films on Si（001）

Cubic boron nitride （c-BN） films were deposited on Si（001） substrates in an ion beam assisted deposition （IBAD） system under various conditions, and the growth parameter spaces and optical properties of c-BN films have been investigated systematically. The results indicate that suitable ion bombardment is necessary for the growth of c-BN films, and a well defined parameter space can be established by using the P/a-parameter. The refractive index of BN films keeps a constant of 1.8 for the c-BN content lower than 50%, while for c-BN films with higher cubic phase the refractive index increases with the c-BN content from 1.8 at χc =50% to 2.1 at χc = 90%. Furthermore, the relationship between n and p for BN films can be described by the Anderson-Schreiber equation, and the overlap field parameter γ is determined to be 2.05.     

Structure,Electrical,and Optical Properties of Nb-doped BaTiO3 Thin Films Grown by Laser Molecular Beam Epitaxy

Structure,electrical,and optical properties of Nb-doped BaTiO3 (Nb:BTO) thin films on MgO substrates grownby laser molecular beam epitaxy with increasing Nb content were investigated.The Nb:BTO thin films with high crystallinity are epitaxially grown on MgO substrates.With more Nb-doped content,the impurity phases are found in Nb:BTO thin films.Hall measurement at room temperature confirms that the charge carriers of the Nb:BTO thin films are n-type.When the Nb-doped content increases,the carrier concentration and carrier mobility increase.Meanwhile the optical transmittance decreases with the increase of the Nb-doping,and the width of the forbidden band in each group is not affected by the presence of Nb in the samples.Raman spectra show that the structural phase transition may occur with the increase of the Nb-doping content,in the meantime more defects and impurities exist in the Nb:BTO thin films.     

Structural and Electrical Characteristics of Pb（Zr0.53,Ti0.47）O3 Thin Films Deposited on Si （100） Substrates

Pb(Zr0.53, Ti0.47)O3 (PZT) films were directly deposited on Si substrates without a buffer layer by pulsed laser deposition. Only(110)-oriented PZT peaks (other than Si substrate peaks) were observed from the XRD data. The electrical properties of the PZT/Si capacitor were characterized in terms of both the capacitance versus voltage (C-V) and current versus voltage (I-V) measurements. The clockwise trace of the C-V curve shows ferroelectric polarization switching, as is expected. From the I-V curves, the Schottky emission and spacecharge-limited-current behaviour are found to be the mainly leakage current mechanism in a certain electric field range in the negative and positive bias, respectively.     

Optical Properties of Co-BaTiO3/Mg（100） Nano-Composite Films Grown by Pulsed Laser Deposition Method

Co nanoparticles embedded in a BaTiO3 matrix, namely Co-BaTiO3 nano-composite films are grown on Mg（100） single crystal substrates by the pulsed laser deposition （PLD） method at 650℃. Optical properties of the CoBaTiO3 nano-composite films are examined by absorption spectra （AS） and photoluminescence （PL） spectra. The results indicate that the concentration of Co nano-particles strongly influences the electron transition of the Co BaTiO3 nano-composite films. The PL emission band ranging from 1.9 to 2.2eV is reported. The AS and PL spectra suggest that the band gap is in the range of 3.28-3.7eV.     

Coverage Dependence of Growth Mode in Heteroepitaxy of Ni on Cu（100） Surface

A realistic kinetic Monte Carlo （KMC） simulation model with physical parameters is developed, which well reproduces the heteroepitaxial growth of multilayered Ni thin film on Cu（100） surfaces at room temperature. The effects of mass transport between interlayers and edge diffusion of atoms along the islands are included in the simulation model, and the surface roughness and the layer distribution versus total coverage are calculated. Speeially, the simulation model reveals the transition of growth mode with coverage and the difference between the Ni heteroepitaxy on Cu（100） and the Ni homoepitaxy on Ni（100）. Through comparison of KMC simulation with the real scanning tunneling microscopy （STM） experiments, the Ehrlich-Schwoebel （ES） barrier Ees is estimated to be 0.18±0.02 eV for Ni/Cu（100） system while 0.28 eV for Ni/Ni（100）. The simulation also shows that the growth mode depends strongly on the thickness of thin film and the surface temperature, and the critical thickness of growth mode transition is dependent on the growth condition such as surface temperature and deposition flux as well.     

Electrical Properties of La-Doped Al2O3 Films on Si （100） Substrates as a High-Dielectric-Constant Gate Material

Amorphous La-doped Al2O3 （La： Al2O3） thin films are deposited on n-type （100） Si substrates by rf magnetron co-sputterlng. The composition of the deposited films is measured by energy dispersive x-ray spectroscopy： Capacitance-voltage measurement shows that the dielectric constant k of La-doped Al2O3 films ranges from 8.5 to 11.6 with the increasing La content, and the highest k value of 11.6 is obtained for the 20.14% La content film. In the structure of the Al/La：Al2O3/Si metal oxide semiconductor, the dominant conduction stems from the space- charge-limited current at different temperatures. In addition, the wavelength dependence of the transmittance is studied by ultraviolet spectroscopy and the band gap of all the deposited films is above 5.5eV. The results demonstrate that La-doped Al2O3 can meet the requirement of next-generation gate materials.     

Two-Step Growth of MgO Films on Sapphire （0001） Substrates by Radio Frequency Plasma-Assisted Molecular Beam Epitaxy

We report on the growth of rock salt MgO films on sapphire (0001) substrates by rf plasma-assisted molecular beam epitaxy.A two-step method,i.e.high temperature epilayer growth after low-temperature buffer layer growth,was adopted to obtain the single crystal MgO film.The epitaxial orientation between the MgO epilayer and the sapphire (0001) substrate was studied by using in situ reflection high energy electron diffraction and ex situ x-ray diffraction,and it is found that the MgO film grows with [111] orientation.The role of the low temperature buffer layer in the improvement of crystal quality of the MgO epilayer is discussed based on the cross-sectional scanning electron microscopy.     

Microstructure of Epitaxial Er2O3 Thin Film on Oxidized Si （111） Substrate

Er2O3 thin films are grown on oxidized Si （111） substrates by molecular beam epitaxy. The sample grown under optimized condition is characterized in its microstructure, surface morphology and thickness using grazing incidence x-ray diffraction （GIXRD）, atomic force morphology and x-ray reflectivity. GIXRD measurements reveal that the Er2O3 thin film is a mosaic of single-crystal domains. The interplanar spacing d in-plane residual strain tensor ell and the strain relaxation degree ε are calculated. The Poisson ratio μ obtained by conventional x-ray diffraction is in good agreement with that of the bulk Er2O3. In-plane strains in three sets of planes, i.e. （440）, （404）, and （044）, are isotropic.     

Structure and Magnetic Properties of （In,Mn）As Based Core-Shell Nanowires Grown on Si（111） by Molecular-Beam Epitaxy

We report the structure and magnetic properties of （In,Mn）As based core-shell nanowires grown on Si （111） by molecular-beam epitaxy. Compared to the core InAs nanowire with a flat side facet and consistent diameter, the core-shell nanowire shows a rough sidewall and an inverse tapered geometry. X-ray diffraction, transmission electron microscopy and energy-dispersive x-ray spectroscopy show that （In,Mn）As is formed on the side facets of In As nanowires with a mixture ofwurtzite and zinc-blende structures. Two ferromagnetic transition temperatures of （In,Mn）As from magnetic measurement data are observed： one is less than 25 K, which could be attributed to the magnetic phase with diluted Mn atoms in the InAs matrix, and the other is at ～300 K, which may originate from the undetectable secondary phases such as MnAs nanoclusters. The synthesis of （In,Mn）As based core-shell nanowires provides valuable information to exploit a new type of spintronic nano-materials.