On the topological explanation of the integer quantum hall effect

We investigate the static and dynamic Kubo Hall conductivity of a non-interacting electron system in a random potential on a torus. Considering the universal covering space of the torus the Bloch theorem is applied for rational values of the filling factor. The localisation is simulated by the assumption of bound states. The Hall conductivity at zero temperatur is shown to be topologically quantized, if the Fermi energy lies in a spectral gap or in a localisation regime. The relation to previous formulations of the topological approach to the integer quantum Hall effect (QHE) is discussed.     

Topological aspects of graphene

Topological aspects of the electronic properties of graphene, including edge effects, with the tight-binding model on a honeycomb lattice and its extensions to show the following: (i) Presence of the pair of massless Dirac dispersions, which is the origin of anomalous properties including a peculiar quantum Hall effect (QHE), is not accidental to honeycomb, but is generic for a class of two-dimensional lattices that interpolate between square and π-flux lattices. Topological stability guarantees persistence of the peculiar QHE. (ii) While we have the massless Dirac dispersion only around E=0, the anomalous QHE associated with the Dirac cone unexpectedly persists for a wide range of the chemical potential. The range is bounded by van Hove singularities, at which we predict a transition to the ordinary fermion behaviour accompanied by huge jumps in the QHE with a sign change. (iii) We establish a coincidence between the quantum Hall effect in the bulk and the quantum Hall effect for the edge states, which is another topological effect. We have also explicitly shown that the E=0 edge states in honeycomb in zero magnetic field persist in magnetic field. (iv) We have also identified a topological origin of the fermion doubling in terms of the chiral symmetry.     

Quantum Hall effect in kagomé lattices under staggered magnetic field

The interplay of staggered magnetic field (SMF) and uniform magnetic field (UMF) on the quantum Hall effect (QHE) in kagomé lattices is investigated in the weak UMF limit. The topological band gaps coming from SMF are robust against UMF although the extended bands split into a series of Landau levels. With SMF applied, in the unconventional QHE region, one plateau of Hall conductance becomes wider and the others are compressed. Meanwhile, one of the two series of integer Hall plateaus splits and the resulting two series of Hall plateaus still exhibit the integer behavior. The Hall conductance varies with SMF step by step with the step height being e(2)/h or 2e(2)/h according to the QHE being conventional or unconventional. In the transitional regions, redistribution of Chern numbers happens even in the weak UMF limit.     

Playing with quantum Hall effects and single-electron-tunneling effects

The usefulness of quantum Hall effect (QHE) conductors and quantum dot (QD) devices is revealed by reviewing five remarkable effects. The first is the sensitive detection of terahertz (THz) radiation by QHE conductors. The second is the imaging of THz emission from non-equilibrium carriers in QHE conductors, by using scanning THz microscopes. The third is the single-photon detection of THz radiation in strong magnetic fields, which is carried out by incorporating a QHE electron system into a QD. Individual events of single-THz-photon absorption within the QD via cyclotron resonance cause the QD to electrically polarize, which, in turn, is detected as switches of the tunnel conductance through the QD. The fourth is the single-photon detection of THz radiation by using double QDs in the absence of a magnetic field. Both of the photon detectors are implemented in gate-voltage-induced lateral GaAs/AlGaAs QDs, and exploiting the extraordinary sensitivity of single-electron transistors to the charge. The fifth is the coherent control of nuclear spins in QHE conductors. Nuclear spins are (i) electrically polarized by unequally populating spin-split QHE edge channels via the hyperfine interaction, (ii) coherently controlled via pulsed nuclear magnetic resonance induced by local RF magnetic fields, and (iii) finally detected by the edge channels through resistance change of the Hall device. The controlled nuclear spins are limited to those along the edge channels, on the order of 10⁹.     

Quantum anomalous Hall effect and related topological electronic states

Over a long period of exploration, the successful observation of quantized version of anomalous Hall effect (AHE) in thin film of magnetically doped topological insulator (TI) completed a quantum Hall trio—quantum Hall effect (QHE), quantum spin Hall effect (QSHE), and quantum anomalous Hall effect (QAHE). On the theoretical front, it was understood that the intrinsic AHE is related to Berry curvature and U(1) gauge field in momentum space. This understanding established connection between the QAHE and the topological properties of electronic structures characterized by the Chern number. With the time-reversal symmetry (TRS) broken by magnetization, a QAHE system carries dissipationless charge current at edges, similar to the QHE where an external magnetic field is necessary. The QAHE and corresponding Chern insulators are also closely related to other topological electronic states, such as TIs and topological semimetals, which have been extensively studied recently and have been known to exist in various compounds. First-principles electronic structure calculations play important roles not only for the understanding of fundamental physics in this field, but also towards the prediction and realization of realistic compounds. In this article, a theoretical review on the Berry phase mechanism and related topological electronic states in terms of various topological invariants will be given with focus on the QAHE and Chern insulators. We will introduce the Wilson loop method and the band inversion mechanism for the selection and design of topological materials, and discuss the predictive power of first-principles calculations. Finally, remaining issues, challenges and possible applications for future investigations in the field will be addressed.     

From magnetically doped topological insulator to the quantum anomalous Hall effect

Quantum Hall effect （QHE）, as a class of quantum phenomena that occur in macroscopic scale, is one of the most important topics in condensed matter physics. It has long been expected that QHE may occur without Landau levels so that neither external magnetic field nor high sample mobility is required for its study and application, Such a QHE free of Landau levels, can appear in topological insulators （TIs） with ferromagnetism as the quantized version of the anomalous Hall effect, i.e., quantum anomalous Hall （QAH） effect. Here we review our recent work on experimental realization of the QAH effect in magnetically doped TIs. With molecular beam epitaxy, we prepare thin films of Cr-doped （Bi,Sb）2Te3 TIs with well- controlled chemical potential and long-range ferromagnetic order that can survive the insulating phase. In such thin films, we eventually observed the quantization of the Hall resistance at h/e2 at zero field, accompanied by a considerable drop in the longitudinal resistance. Under a strong magnetic field, the longitudinal resistance vanishes, whereas the Hall resistance remains at the quantized value. The realization of the QAH effect provides a foundation for many other novel quantum phenomena predicted in TIs, and opens a route to practical applications of quantum Hall physics in low-power-consumption electronics.     

Three-dimensional quantum Hall effect in Weyl and double-Weyl semimetals

The well-known quantum Hall effect (QHE) was usually studied in 2D systems. In this work, we investigate the integer QHE in 3D Weyl and double-Weyl semimetals. Based on the lattice models of Weyl and double-Weyl semimetals subjected to a uniform magnetic field, we derive the generalized 3D spinfull Hofstadter Hamiltonians and Harper equations for the two systems, and obtain their corresponding energy spectra. Furthermore, we show that for proper hopping parameters and rational magnetic fluxes, both systems exhibit the 3D QHE when the Fermi level lies in some band gaps. The 3D QHE is topologically characterized by three Chern numbers with one or two nonzero Chern values which are respectively defined for three crystal planes. The possible experimental realization and detection of the 3D QHE are also discussed.     

Generalization of the theory of three-dimensional quantum Hall effect of Fermi arcs in Weyl semimetal

The quantum Hall effect (QHE), which is usually observed in two-dimensional systems, was predicted theoretically and observed experimentally in three-dimensional (3D) topological semimetal. However, there are some inconsistencies between the theory and the experiments showing the theory is imperfect. Here, we generalize the theory of the 3D QHE of Fermi arcs in Weyl semimetal. Through calculating the sheet Hall conductivity of a Weyl semimetal slab, we show that the 3D QHE of Fermi arcs can occur in a large energy range and the thickness dependences of the QHE in different Fermi energies are distinct. When the Fermi energy is near the Weyl nodes, the Fermi arcs give rise to the QHE which is independent of the thickness of the slab. When the Fermi energy is not near the Weyl nodes, the two Fermi arcs form a complete Fermi loop with the assistance of bulk states giving rise to the QHE which is dependent on the sample thickness. We also demonstrate how the band anisotropic terms influence the QHE of Fermi arcs. Our theory complements the imperfections of the present theory of 3D QHE of Fermi arcs.     

Is the quantum Hall effect influenced by the gravitational field?

Most of the experiments on the quantum Hall effect (QHE) were made at approximately the same height above sea level. A future international comparison will determine whether the gravitational field g(x) influences the QHE. In the realm of (1+2)-dimensional phenomenological macroscopic electrodynamics, the Ohm-Hall law is metric independent ("topological"). This suggests that it does not couple to g(x). We corroborate this result by a microscopic calculation of the Hall conductance in the presence of a post-Newtonian gravitational field.     

Quantum Hall Effect on the Hyperbolic Plane in the Presence of Disorder

We study both the continuous model and the discrete model of the quantum Hall effect (QHE) on the hyperbolic plane in the presence of disorder, extending the results of an earlier paper. Here we model impurities, that is we consider the effect of a random or almost periodic potential as opposed to just periodic potentials. The Hall conductance is identified as a geometric invariant associated to an algebra of observables, which has plateaus at gaps in extended states of the Hamiltonian. We use the Fredholm modules defined in Comm. Math. Phys. 190 (1998), 629–673, to prove the integrality of the Hall conductance in this case. We also prove that there are always only a finite number of gaps in extended states of any random discrete Hamiltonian.     

Effective Hamiltonian for striped and paired states at the half-filled Landau level

We study a pairing mechanism for the quantum Hall system using a mean field theory with a basis on the von Neumann lattice, on which the magnetic translations commute. In the Hartree–Fock–Bogoliubov approximation, we solve the gap equation for spin-polarized electrons at the half-filled Landau levels. We obtain an effective Hamiltonian which shows a continuous transition from the compressible striped state to the paired state. Furthermore, a crossover occurs in the pairing phase. The energy spectrum and energy gap of the quasiparticle in the paired state is calculated numerically at the half-filled second Landau level.     

Imaging of Coulomb-driven quantum Hall edge states

The edges of a two-dimensional electron gas (2DEG) in the quantum Hall effect (QHE) regime are divided into alternating metallic and insulating strips, with their widths determined by the energy gaps of the QHE states and the electrostatic Coulomb interaction. Local probing of these submicrometer features, however, is challenging due to the buried 2DEG structures. Using a newly developed microwave impedance microscope, we demonstrate the real-space conductivity mapping of the edge and bulk states. The sizes, positions, and field dependence of the edge strips around the sample perimeter agree quantitatively with the self-consistent electrostatic picture. The evolution of microwave images as a function of magnetic fields provides rich microscopic information around the ν=2 QHE state.     

Metal-insulator oscillations in a two-dimensional electron-hole system

The electrical transport properties of a bipolar InAs/GaSb system have been studied in a magnetic field. The resistivity oscillates between insulating and metallic behavior while the quantum Hall effect shows a digital character oscillating from 0 to 1 conductance quantum e(2)/h. The insulating behavior is attributed to the formation of a total energy gap in the system. A novel looped edge state picture is proposed associated with the appearance of a voltage between Hall probes which is symmetric on magnetic field reversal.     

Prediction of quantum anomalous Hall effect in CrI3/ScCl2 bilayer heterostructure

Based on first-principles calculations, a two-dimensional (2D) van der Waals (vdW) bilayer heterostructure consisting of two topologically trivial ferromagnetic (FM) monolayers CrI₃ and ScCl₂ is proposed to realize the quantum anomalous Hall effect (QAHE) with a sizable topologically nontrivial band gap of 4.5 meV. Its topological nature is attributed to an interlayer band inversion between the monolayers and critically depends on the symmetry of the stacking configuration. We further demonstrate that the topologically nontrivial band gap can be increased nearly linearly by the application of a perpendicular external pressure and reaches 8.1 meV at 2.7 GPa, and the application of an external out-of-plane electric field can also modulate the band gap and convert the system back to topologically trivial via eliminating the band inversion. An effective model is developed to describe the topological phase evolution in this bilayer heterostructure. This work provides a new candidate system based on 2D vdW materials for realization of potential high-temperature QAHE with considerable controllability.     

Resistance metrology based on the quantum Hall effect

The Quantum Hall effect (QHE), a macroscopic effect of solid state physics, provides a universal representation of the unit of resistance which depends on the elementary charge e and the Planck constant h only. If implemented according to specific technical guidelines, the quantum resistance standard can be reproduced with a relative uncertainty below one part in 10⁹. Calibrations of wire resistors in terms of the QHE can be carried out with similarly low uncertainties by using resistance bridges equipped with cryogenic current comparators, the performance of which relies on the magnetic flux sensitivity of superconducting quantum interference devices (SQUID). Using a special connection technique, the fundamental properties of the QHE allow the fabrication of arrays combining a large number of single Hall bars connected in series or in parallel and which demonstrate quantum accuracy. Similar to the case of voltage metrology with Josephson array voltage standards, an improvement of resistance metrology is expected from the availability of quantum Hall array resistance standards (QHARS). The QHE Wheatstone bridge, which is another application of the same connection technique, opens the way to new universality tests of the QHE with a relative uncertainty below one part in 10¹¹. At frequencies in the kilohertz range, the recent progress in the application of coaxial bridges to the QHE allows metrologists to operate a quantum resistance standard with alternating current reaching an accuracy of some parts in 10⁸. Finally, the discovery of the QHE in graphene opens new horizons for the resistance metrology.     

Landau levels in deformed bilayer graphene at low magnetic fields

We review the effect of uniaxial strain on the low-energy electronic dispersion and Landau level structure of bilayer graphene. Based on the tight-binding approach, we derive a strain-induced term in the low-energy Hamiltonian and show how strain affects the low-energy electronic band structure. Depending on the magnitude and direction of applied strain, we identify three regimes of qualitatively different electronic dispersions. We also show that in a weak magnetic field, sufficient strain results in the filling factor ν=±4 being the most stable in the quantum Hall effect measurement, instead of ν=±8 in unperturbed bilayer at a weak magnetic field. To mention, in one of the strain regimes, the activation gap at ν=±4 is, down to very low fields, weakly dependent on the strength of the magnetic field.     

Bound values for Hall conductivity of heterogeneous medium under quantum Hall effect conditions

Bound values for Hall conductivity under quantum Hall effect (QHE) conditions in inhomogeneous medium has been studied. It is shown that bound values for Hall conductivity differ from bound values for metallic conductivity. This is due to the unusual character of current percolation under quantum Hall effect conditions.      

Effective Maxwell equations for finite planar samples in QHE regime

Effective Maxwell equations for the mean quantum electromagnetic field in planar samples in QHE regime are investigated. Boundary conditions to be satisfied by the mean field intensities at the filamentary boundaries (edges) are determined. For ideal strictly 2D samples embedded in real 3D space, these constraints imply that the total filamentary charge at the boundaries (the free plus polarization terms) and current densities identically vanish at all times. In the static limit the exact quantization of the Hall resistance of samples of arbitrary form, directly follows from the boundary condition. The equations for the electromagnetic response in a neighborhood of the edge of a half-plane in QHE regime are solved. The system exhibits a weak diamagnetic response and inhomogeneous charge and current distributions develop in the sample.     

Quantum Hall effect in back-gated InAs/GaSb heterostructures under a tilted magnetic field

We investigate the quantum Hall effect (QHE) in the InAs/GaSb hybridized electron–hole system grown on a conductive InAs substrate which act as a back-gate. In these samples, the electron density is constant and the hole density is controlled by the gate-voltage. Under a magnetic field perpendicular to the sample plane, the QHE appears along integer Landau-level (LL) filling factors of the net-carriers, where the net-carrier density is the difference between the electron and hole densities. In addition, longitudinal resistance maxima corresponding to the crossing of the extended states of the original electron and hole LLs make the QHE regions along integer-ν_net discontinuous. Under tilted magnetic fields, these R_xx maxima disappear in the high magnetic field region. The results show that the in-plane magnetic field component enhances the electron–hole hybridization and the formation of minigaps at LL crossings.     

Excitons and magnetoexcitons in coupled quantum nanostructures: the role of a dirty environment

The effect of a random field caused by impurities, interface roughness and so on, on the optical properties and superfluidity of a quasi-two-dimensional system of excitons is studied. The influence of a random field on the density of the superfluid component of excitonic systems at low temperatures is investigated. For quasi-two-dimensional excitonic systems in a random field the Kosterlitz–Thouless temperature in the superfluid state is calculated. The superfluidity and Bose–Einstein condensation of indirect excitons in coupled quantum dots are studied. Magnetoexciton light absorption in the disordered quantum wells is considered. The two-particle problem of the magnetoexciton motion in the external field depending on the external magnetic field is reduced to the one-particle motion with effective magnetic mass in some effective field. The energy and optical absorption of the magnetoexciton in a single and coupled quantum dots are studied using the effective-magnetic-mass Hamiltonian. In the coherent potential approximation the coefficient of magnetoexciton optical absorption in single and coupled quantum wells is calculated. In the strong magnetic fields the exciton peak decreases with magnetic field increasing in accordance with the experimental data. The localization of direct and indirect magnetoexcitons is investigated. Received: 14 April 2000 / Accepted: 17 April 2000 / Published online: 6 September 2000