Relation between space-charge-limiting current and electric field enhancement factor at curved surface cathode

A two-dimensional solution of space-charge-limiting current for a high current vacuum diode with a spherical cathode is presented. The relation between space-charge-limiting current and electric field enhancement factor at the cathode surface for the diode with a curved surface cathode is also discussed. It is shown that compared with the current given by the conventional Child—Langmuir law, which describes the one-dimensional space-charege-limiting current, the two-dimensional space-charge-limiting current in such a diode is enhanced due to the electric-field enhancement along the cathode surface. Among practical parameter ranges, enhancement factor η_b approximately satisfies η_b ≈ Aβⁿ, where β is the electric field enhancement factor at the cathode surface, and n is a constant between 1 and 2, which is confirmed to be universal for the diodes with curved surface cathodes.     

High Gain Lateral Semi-Insulating GaAs Photoconductive Switch Triggered by 1064nm Laser Pulses

We report on the experimental results of a lateral semi-insulating GaAs photoconductive switch,with a gap of 8 mm between two electrodes,triggered by 1064 nm laser pulses at a wavelength beyond the GaAs absorption edge.Both the linear and nonlinear modes of the switch were observed when it was triggered by light pulses with an energy of 1.9 mJ and a pulse width of 60 ns,and operated at high voltages of 3 and 5 kV.The results show that when the semi-insulating GaAs photoconductive switch operates under an electrical field of 4.37kV/cm,it will enter into the linear mode first,and then the switch will undergo the nonlinear mode (lock-on ) after a delay of about 20-100ns.It is worth noticing that the delay time under high light energy is longer than that in the low optical energy.The non-intrinsic absorption mechanism is discussed.EL2 deep level defects and double-photon absorption in GaAs may play a key part in the absorption process.     

The leakage current mechanisms in the Schottky diode with a thin Al layer insertion between Al0.245Ga0.755N/GaN heterostructure and Ni/Au Schottky contact

This paper investigates the behaviour of the reverse-bias leakage current of the Schottky diode with a thin Al inserting layer inserted between Al0.245Ga0.755 N/GaN heterostructure and Ni/Au Schottky contact in the temperature range of 25-350°C. It compares with the Schottky diode without Aluminium inserting layer. The experimental results show that in the Schottky diode with Al layer the minimum point of I-V curve drifts to the minus voltage, and with the increase of temperature increasing, the minimum point of I-V curve returns the 0 point. The temperature dependence of gate-leakage currents in the novelty diode and the traditional diode are studied. The results show that the Al inserting layer introduces interface states between metal and Al0.245Ga0.755N. Aluminium reacted with oxygen formed Al2O3 insulator layer which suppresses the trap tunnelling current and the trend of thermionic field emission current. The reliability of the diode at the high temperature is improved by inserting a thin Al layer.     

A super junction SiGe low-loss fast switching power diode

This paper proposes a novel super junction (SJ) SiGe switching power diode which has a columnar structure of alternating p^- and n^- doped pillar substituting conventional n^- base region and has far thinner strained SiGe p⁺ layer to overcome the drawbacks of existing Si switching power diode. The SJ SiGe diode can achieve low specific on-resistance, high breakdown voltages and fast switching speed. The results indicate that the forward voltage drop of SJ SiGe diode is much lower than that of conventional Si power diode when the operating current densities do not exceed 1000 A/cm², which is very good for getting lower operating loss. The forward voltage drop of the Si diode is 0.66V whereas that of the SJ SiGe diode is only 0.52 V at operating current density of 10 A/cm². The breakdown voltages are 203 V for the former and 235 V for the latter. Compared with the conventional Si power diode, the reverse recovery time of SJ SiGe diode with 20 per cent Ge content is shortened by above a half and the peak reverse current is reduced by over 15%. The SJ SiGe diode can remarkably improve the characteristics of power diode by combining the merits of both SJ structure and SiGe material.     

An untuned MA-loaded cavity for HIRFL-CSR

In order to realize high energy density physics and plasma physics research at HIRFL-CSR, a magnetic alloy (MA)-loaded cavity has been studied. According to the theoretical calculation and simulation for the MA-loaded cavity, we achieved a better result. The MA-loaded cavity had a higher μQf value, with a higher shunt impedance and a higher accelerating gradient. The accelerating gradient was about 95 kV/m at 1.8003 MHz, 130 kV/m at 0.9000 MHz. Compared with the ferrite-loaded cavities that are used at HIRFL-CSR, with about 10 kV/m accelerating gradient, the MA-loaded cavity obviously has an advantage. The results of the theoretical calculation and the simulation, which meet the design requirements are in good agreement.     

An untuned MA-loaded cavity for HIRFL-CSR

In order to realize high energy density physics and plasma physics research at HIRFL-CSR, a magnetic alloy （MA）-loaded cavity has been studied. According to the theoretical calculation and simulation for the MA-loaded cavity, we achieved a better result. The MA-loaded cavity had a higher μQf value, with a higher shunt impedance and a higher accelerating gradient. The accelerating gradient was about 95 kV/m at 1.8003 MHz, 130 kV/m at 0.9000 MHz. Compared with the ferrite-loaded cavities that are used at HIRFL-CSR, with about 10 kV/m accelerating gradient, the MA-loaded cavity obviously has an advantage. The results of the theoretical calculation and the simulation, which meet the design requirements are in good agreement.     

A low-outgassing-rate carbon fiber array cathode

In this paper, a new carbon fiber based cathode — a low-outgassing-rate carbon fiber array cathode — is investigated experimentally, and the experimental results are compared with those of a polymer velvet cathode. The carbon fiber array cathode is constructed by inserting bunches of carbon fibers into the cylindrical surface of the cathode. In experiment, the diode base pressure is maintained at 1×10~(-2) Pa–2×10~(-2) Pa, and the diode is driven by a compact pulsed power system which can provide a diode voltage of about 100 kV and pulse duration of about 30 ns at a repetition rate of tens of Hz.Real-time pressure data are measured by a magnetron gauge. Under the similar conditions, the experimental results show that the outgassing rate of the carbon fiber array cathode is an order smaller than that of the velvet cathode and that this carbon fiber array cathode has better shot-to-shot stability than the velvet cathode. Hence, this carbon fiber array cathode is demonstrated to be a promising cathode for the radial diode, which can be used in magnetically insulated transmission line oscillator(MILO) and relativistic magnetron(RM).     

A New High Power Microwave Source Operated at Low Magnetic Field

A new tpye of high power microwave souce operated at low magnetic filed is proposed and studied by the particle-in-cell (PIC) method.An oversized uniform backward-wave-oscillator-like structure is connected to a tapered slow-wave structure by a resonalt cavity.In this device,the electron beam current is effectively used to yield microwaves with high efficientcy,and the mode is locked in a wide range of diode voltage to reduce the requirement to the voltage wave form.The PIC siumlation results show that a peak microwave power of 2.1 GW (averaged 1.1GW) with a pure TM01 mode at 10.7GHz is radiated with 4.1GW input beam power,the frequency remains approximately the same when the diode voltage changed from 300kV to 700kV.     

Structural and Luminescence Properties of Transparent Nanocrystalline ZrO2：Er^3＋ Films

The structural and luminescence properties of nanocrystalline ZrO2 ：Er^3＋ films are reported. Transparent nano-ZrO2 crystalline films doped with Er^3＋ have been prepared using a wet chemistry process. An intense roomtemperature emission at 1527nm with a full width at half-maximum of 46 nm has been observed, which is assigned to the ^4Ⅰ13/2 → ^4Ⅰ15/2 intra-4f^n electric transition of Er^3＋. Correlations between the luminescence properties and structures of the nanocrystalline ZrO2 ：Er^3＋ films have been investigated. Infrared-to-visible upconversion occurs simultaneously upon excitation of a commercially available 980-nm laser diode and the involved mechanisms have also been explained. The results indicate that the nanocrystalline ZrO2：Er^3＋ films might be suggested as promising materials for achieving broadband Er^3＋-doped waveguide amplifiers and upconversion waveguide lasers.     

A Low-Pump-Threshold High-Repetition-Rate Intracavity Optical Parametric Generator Based on Periodically Poled Lithium Niobate

A low-pump-threshold high-repetition-rate intracavity optical parametric generator （IOPG） by using a periodically poled lithium niobate （PPLN） is reported. The PPLN, which is 18.7mm long and has a grating period of 28.93tzm at room temperature, is inserted in a diode-end-pumped Nd：YV04 laser with an acousto-optic Q switch. The parametric generation threshold is 1.3 W （diode laser power） at a Q-switch repetition rate of 19 kHz. At an incident diode pump power of 5 W, an average signal output power of 280mW has been achieved. The signal pulse duration is approximately 85 ns. By changing the crystal temperature from 120℃ to 250℃, the signal wavelength can be tuned from 1.493μm to 1.538μm.     

Efficiency droop alleviation in blue light emitting diodes using the InGaN/GaN triangular-shaped quantum well

The InGaN/GaN blue light emitting diode(LED) is numerically investigated using a triangular-shaped quantum well model,which involves analysis on its energy band,carrier concentration,overlap of electron and hole wave functions,radiative recombination rate,and internal quantum efficiency.The simulation results reveal that the InGaN/GaN blue light emitting diode with triangular quantum wells exhibits a higher radiative recombination rate than the conventional light emitting diode with rectangular quantum wells due to the enhanced overlap of electron and hole wave functions(above 90%) under the polarization field.Consequently,the efficiency droop is only 18% in the light emitting diode with triangular-shaped quantum wells,which is three times lower than that in a conventional LED.     

A snapback suppressed reverse-conducting IGBT with uniform temperature distribution

A novel reverse-conducting insulated-gate bipolar transistor(RC-IGBT) featuring a floating P-plug is proposed. The P-plug is embedded in the n-buffer layer to obstruct the electron current from flowing directly to the n-collector, which achieves the hole emission from the p-collector at a small collector size and suppresses the snapback effectively. Moreover, the current is uniformly distributed in the whole wafer at both IGBT mode and diode mode, which ensures the high temperature reliability of the RC-IGBT. Additionally, the P-plug acts as the base of the N-buffer/P-float/N-buffer transistor, which can be activated to extract the excessive carriers at the turn-off process. As the the simulation results show, for the proposed RC-IGBT, it achieves almost snapback-free output characteristics with a uniform current density and a uniform temperature distribution, which can greatly increase the reliability of the device.     

High packing density laser diode stack arrays using Al-free active region laser bars with a broad waveguide and discrete copper microchannel-cooled heatsinks

A high packing density laser diode stack array is developed utilizing Al-free active region laser bars with a broad waveguide and discrete copper microchannel-cooled heatsinks. The microchannel cooling technology leads to a 10-bar laser diode stack array having the thermal resistance of 0.199 ℃/W, and enables the device to be operated under continuous-wave （CW） condition at an output power of 1200 W. The thickness of the discrete copper heatsink is only 1.5 mm, which results in a high packing density and a small bar pitch of 1.8 mm.     

基于开环振荡器阵列磁振荡效应的全光开关

We demonstrate an all-optical switching of the magnetic resonance properties associated with a metallic Split Ring Resonator（SRR） array. The periodically spaced elements are fabricated on a high-resistivity silicon wafer and probed by using conventional Terahertz （THz） time-domain spectroscopy. We use a continuous-wave laser diode to generate carriers in the gaps of the SRR elements. Using a sufficient power, this opti- cal excitation can create an effective short gap, which would switch the resonant properties of the metamaterial from that of an SRR array to that of a closed ring resonator array and leads to dramatic changes in the THz transmission. In the present experiment, the optically induced switching is associated with the magnetic reso- nance. However, with appropriate changes in the device structure, this approach can be extended to switch a medium with a negative real index of refraction to a medium with a positive real index of refraction. This opens the way to creat a broad new range of active devices.     

Extension of Isospin Dependent Quantum Molecular Dynamics

Isospin dependent molecular dynamics (IQMD) has been used with success for studying isospin effects in heavy ion collisions at intermediate energies[1,2]. However, this model meets difficulty to study heavy ion collisions at low energies near Coulomb barrier since unsuitable dealing with the deformation, such as surface term induced by deformation during approaching projectile and target, which is not important at high energies, and it results in the calculated cross sections with IQMD which are much smaller than the experimental data at low energies. In this report, we propose a new method in which the surface term in the mean field is included in a proper way, the switch function method.     

Electroluminescence and Photoluminescence from Scored Si—Rich SiO2 Film／p—Si Structure

Electroluminescence(EL)is observed from the Au/Si-rich SiO2 film/p-Si diodes,in which the Si-rich SiO2 films are scroed deliberately by a diamond tip.The EL intensity of the scroed diode annelaed at 800℃ is about 6 times of that of the unscored counterpart,The EL sectrum of the usscored diode could be decomposed into two Gaussian luminescence bands with peaks at about 1.83 and 2.23eV,while for the EL spectrum of the scored diode,an additional Gaussian band at about 3.0eV appears,and the 1.83-eV peak increases significantly in intensity,The photoluminescence(PL) spectrum of an unscored Si-rich SiO2 film has only one band peaking at about 1.48eV,whereas the Pl spectrum of the scored one has two bands at about 1.48 and 1.97eV.We consider that the high-density defect regions produced by the scoring provide new luminescence centres and become some types of nonradiative centres in the Si oxide layer,which thus result in changes of the EL and PL spectra.     

A 420nm Blue Diode Laser for the Potential Rubidium Optical Frequency Standard

We report a 420 nm external cavity diode laser with an interference filter(IF) of 0.5 nm narrow-bandwidth and79% high transmission, which is first used for Rb optical frequency standard. The IF and the cat-eye reflector are used for selecting wavelength and light feedback, respectively. The measured laser linewidth is 24 kHz when the diode laser is free running. Using this narrow-linewidth IF blue diode laser, we realize a compact Rb optical frequency standard without a complicated PDH system. The preliminary stability of the Rb optical frequency standard is 2× 10~(-13) at 1 s and decreases to 1.9×10~(-14) at 1000 s. The narrow-linewidth characteristic makes the IF blue diode laser a well suited candidate for the compact Rb optical frequency standard.     

Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination

The vertical GaN-on-GaN Schottky barrier diode with boron-implanted termination was fabricated and characterized.Compared with the Schottky barrier diode(SBD)without boron-implanted termination,this SBD effectively improved the breakdown voltage from 189 V to 585 V and significantly reduced the reverse leakage current by 10^5 times.In addition,a high Ion/Ioff ratio of ~10^8 was achieved by the boron-implanted technology.We used Technology Computer Aided Design(TCAD)to analyze reasons for the improved performance of the SBD with boron-implanted termination.The improved performance of diodes may be attributed to that B+could confine free carriers to suppress electron field crowding at the edge of the diode,which could improve the breakdown voltage and suppress the reverse leakage current.     

HEM11 mode magnetically insulated transmission line oscillator： Simulation and experiment

A novel magnetically insulated transmission line oscillator （MILO） in which a modified HEM11 mode is taken as its main interaction mode （HEM11 mode MILO） is simulated and experimented in this paper. The excitation of the oscillation mode is made possible by carefully adjusting the arrangement of each resonant cavity in a two-dimensional slow wave structure. The special feature of such a device is that in the slow-wave-structure region, the interaction mode is HEM11 mode which is a TM-like one that could interact with electron beams effectively; and in the coaxial output region, the microwave mode is TE11 mode which has a favourable field density pattern to be directly radiated. Employing an electron beam of about 441 kV and 39.7 kA, the HEM11 mode MILO generates a high power microwave output of about 1.47 GW at 1.45 GHz in particle-in-cell simulation. The power conversion efficiency is about 8.4 % and the generated microwave is in a TEll-like circular polarization mode. In a preliminary experiment investigation, high power microwave is detected from the device with a frequency of 1.46 GHz, an output energy of 43 J 47 J, and a pulse duration of 44 ns-49 ns when the input voltage is 430 kV450 kV, and the diode current is 37 kA-39 kA.     

Simulation and experimental study of the solid pulse forming lines for dielectric wall accelerator

Two types of pulse forming lines for dielectric wall accelerator (DWA) were investigated preliminarily. By simulation with CST Microwave Studio, the results indicate the pulse forming process, which can help to understand the voltage wave transmission process and optimize the line parameters. Furthermore, the principle of the pulse forming process was proved by experiments and some excellent pulse waveforms were obtained. During the experiments, the Blumlein line and zero integral pulse (ZIP) forming line, constructed with aluminum foil, poly plate and air gap self-closing switch, were tested. The full width at half maximum (FWHM) of the waveform is 16 nanoseconds (BL) and 17 nanoseconds (ZIP line),and the formed pulse voltage amplitude is 5 kV (BL) and +2.2 kV/ - 1.6 kV (ZIP line). The experiments result coincides well with the simulation.