Effect of cathodic arc PVD parameters on roughness of TiN coating on steel substrate

Titanium nitride which is widely used as a hard coating material was coated on tool steel, by physical vapor deposition method. Surface roughness was investigated as a function of deposition rate, substrate bias and temperature, nitrogen flow rate and metal ion etching. The study showed that increase in surface roughness mainly depends on the condition of sample preparation, surface treatment, macro-droplets, pitting defects, rise in compressive stress at higher coating thickness, growth defects and to a lesser extent selection of surface under testing. It was observed that chromium ion etching significantly reduced the surface roughness compared to titanium ion etching.     

Free-standing Si/SiGe micro- and nano-objects

Free-standing SiGe/Si microtubes, microneedles, helical coils, bridges and submicron vertical rings have been fabricated from elastically strained SiGe/Si heterostructures grown by ultra-high vacuum chemical vapor deposition. Three-dimensional micro- and nano-objects have been formed by self-scrolling after electron beam lithography, reactive ion etching and wet selective etching. Vertical rings with very smooth sidewalls may have applications in hot embossing lithography as well as in microelectronics and micromechanics. By adjusting the SiGe/Si bilayer thickness or Ge concentration, the diameter of tube or ring could be decreased into the nanometer scale.     

电沉积法分离钕、锆的探索

研究了钕、锆在硫酸铵体系和氯化铵体系中单组分电沉积行为,在氯化铵体系中进行了钕-锆混合组分电沉积分离实验,结果显示在锆沉积率大于80%时钕未见沉积,可实现钕-锆的电沉积分离。     

利用多层膜生长技术制备纳米印章模板

在纳米印章技术中，为克服电子束刻蚀制备50nm以下线条的技术难点，利用等离子增强化学 气相沉积技术制备了a-Si/SiN_x多层膜，再利用选择性湿法腐蚀或干法腐蚀在横 截面上制备出浮雕型一维纳米级模板. 多层膜子层之间界面清晰陡峭，可以在纳米量级对子 层厚度进行控制，得到了侧壁在纳米尺度上平滑的模板. 通过控制多层膜子层的生长时间， 制备出线条宽度和槽状宽度均为20nm的等间距模板，品质优于电子束刻蚀技术制备的模板. 关键词： 纳米印章模板 多层膜生长技术     

单晶LaB6场发射阵列的电化学腐蚀工艺

 六硼化镧（LaB₆）场发射尖锥阵列的刻蚀工艺是制备LaB₆场发射阵列阴极的关键。在(111)面单晶LaB₆基片上,用等离子体增强化学气相沉积法制备氮化硅层做掩膜,光刻后采用电化学腐蚀方法对基片进行刻蚀,得到具有一定高度的LaB₆尖锥场发射阵列。讨论了单晶LaB₆的电化学腐蚀机理。改变各种电化学腐蚀参数,包括电解液成分、电解液浓度、阳极所加电压,用电子扫描显微镜观察样品形貌。结果发现H₃PO₄是刻蚀单晶LaB₆的理想电解液,它克服了过去电化学实验中经常遇到的尖锥各向异性问题。随着电解液浓度或阳极电压的增大,尖锥高度增加,但是基底表面变得更为粗糙。另一方面,阳极电压太小时,有横向刻蚀现象产生,不利于提高发射体的场增强因子。此外,在二极管结构中初步测试了LaB6尖锥场发射阵列的电流发射特性,在真空度2×10^-4 Pa、极间距离0.1 mm、阳极电压900 V下,发射电流达到13 mA。     

Spatial variations in the stoichiometry of sputtered YBaCuO thin films: theory and experiment

A Monte Carlo simulation of the sputtering process is applied to the problem of the thickness and stoichiometry variations in the sputtering of YBaCuO superconducting targets. The theory predicts no strong spatial variations in stoichiometry due to the different scattering behaviour of the various constituents of the superconductor. The theory is compared with a systematic experimental study using both RF and DC sputtering in either argon or oxygen gases. The ratios Ba: Y and Cu: Y were determined as a function of radial distance by inductively coupled plasma analysis (ICP). In argon, both DC and RF sputtering gave a thickness distribution in reasonable agreement with theory. In oxygen, RF sputtering gave a thickness distribution very different to theory and gave no net deposition in an annular central region. Stoichiometry variations are interpreted in terms of etching processes. The role of oxygen ions in etching is discussed and a case made for the importance of oxygen positive ions in RF sputtering in oxygen.     

集成多通道光子晶体的设计及初步实验制备

在Fabry-Perot滤光片的基础上,通过改变双通道和通带通道光子晶体中处于不同对称中心的两种缺陷层的厚度,可使相应的通道或者通带位置进行独立的移动.通过刻蚀或者补偿,使缺陷层的厚度分别在二个维度方向上发生变化,改变入射光束与光子晶体的相对位置,即可实现通道和通带通道可调谐二维光子晶体.32个通道光子晶体的初步实验结果证明了设计方案的可行性.     

CVD金刚石中的氮对等离子体刻蚀的影响

采用非对称磁镜场电子回旋共振等离子体分别对沉积过程中掺氮和未掺氮的化学气相沉积金刚石膜进行了刻蚀研究, 结果表明: 掺氮制备的金刚石膜的刻蚀主要集中在晶棱处, 经过4h刻蚀后其表面粗糙度由刻蚀前的4.761 μm下降至3.701 μm, 刻蚀对金刚石膜的表面粗糙度的影响较小; 而未掺氮制备的金刚石膜的刻蚀表现为晶面的均匀刻蚀, 晶粒坍塌,刻蚀4h后其表面粗糙度由刻蚀前的3.061 μm下降至1.083 μm. 刻蚀导致表面粗糙度显著降低. 上述差别的主要原因在于金刚石膜沉积过程中掺氮导致氮缺陷在金刚石晶棱处富集, 晶棱处电子发射加强, 引导离子向晶棱运动并产生刻蚀, 从而加剧晶棱的刻蚀. 而未掺氮金刚石膜,其缺陷相对较少且分布较均匀 ,刻蚀时整体呈现为 (111) 晶面被均匀刻蚀继而晶粒坍塌的现象. 关键词： 掺氮 金刚石膜 刻蚀 非对称磁镜场     

Antireflection microstructures fabricated upon fluorine-doped SiO(2) films

Two-dimensional periodic structures were fabricated upon a fluorine-doped SiO(2) film in which the fluorine content changed gradually in the direction of film thickness. The films were deposited by plasma-enhanced chemical-vapor deposition. The film was periodically patterned into a 1-mum period and an ~1-mum -groove depth by inductive coupled plasma reactive-ion etching followed by chemical etching in a diluted HF solution. A surface reflectance of 0.7% was attained at 1.85-mum wavelength, a value that is one fifth as large as the 3.5% Fresnel reflection of a SiO(2) substrate with a flat surface.     

Generation of surface-voltage by charged crystal defects and applications

Abstract

Working mainly on quartz crystals it has been found that crystal defects present inherently or generated deliberately on the surface and in the bulk give rise to surface voltage (called by us self-voltage) due to charged electron and hole traps produced by the defects, the self-voltage thus forming monitor of presenceof crystal defects. The self-voltage could be measured by FET instrumentation.

Based on the above the crystal defects (and hence self-voltage) were reduced or practically eleminated by combination of processes of etching and annealing of the quartz, allthis reseulting in improvements of electronic characteristics of quartz crystals such as resistivity and frequency stability.     

一种简单高效的制备硅纳米孔阵结构的方法

本文介绍了一种简单高效的制备硅纳米孔阵结构的方法. 利用激光干涉光刻技术, 结合干法和湿法刻蚀工艺, 直接将光刻胶点阵刻蚀为硅纳米孔阵结构, 省去了图形反转工艺中的金属蒸镀和光刻胶剥离等必要步骤, 在2英寸的硅 (001) 衬底上制备了高度有序的二维纳米孔阵结构. 利用干法刻蚀产生的氟碳有机聚合物作为湿法刻蚀的掩膜, 以及在干法刻蚀时对样品进行轻微的过刻蚀, 使SiO₂点阵图形下形成一层很薄的硅台面, 是本方法的两个关键工艺步骤. 扫描电子显微镜图片结果表明制备的孔阵图形大小均匀, 尺寸可控, 孔阵周期为450 nm, 方孔大小为200–280 nm. 关键词： 激光干涉光刻 纳米阵列 刻蚀 氟碳有机聚合物     

玻璃基片上SiO_2膜层厚度的测量方法

钠钙玻璃基片在液晶显示器件（ＬＣＤ） 等制造业中得到了广泛的应用。为防止基片中的碱金属离子扩散到器件的工作介质中,进而影响其化学稳定性和使用寿命,一般要在基片表面镀上一定厚度的ＳｉＯ２ 膜层,以便起到阻挡层的作用。基于Ｐ 蚀刻剂对ＳｉＯ２ 膜层和基片有显著不同的蚀刻速度,提出了一种测量玻璃基片上的ＳｉＯ２ 膜层厚度的方法,即：利用表面轮廓仪,在测量三个不同的蚀刻数据后,计算出ＳｉＯ２ 膜层的厚度。以用射频溅射法制备的ＳｉＯ２ 膜层为样品进行了测量,具体的实验数据证实了该方法的可靠性和有效性     

Ultra‐thin optical grade scCVD diamond as X‐ray beam position monitor

Results of measurements made at the SIRIUS beamline of the SOLEIL synchrotron for a new X‐ray beam position monitor based on a super‐thin single crystal of diamond grown by chemical vapor deposition (CVD) are presented. This detector is a quadrant electrode design processed on a 3 µm‐thick membrane obtained by argon–oxygen plasma etching the central area of a CVD‐grown diamond plate of 60 µm thickness. The membrane transmits more than 50% of the incident 1.3 keV energy X‐ray beam. The diamond plate was of moderate purity (～1 p.p.m. nitrogen), but the X‐ray beam induced current (XBIC) measurements nevertheless showed a photo‐charge collection efficiency approaching 100% for an electric field of 2 V µm^?1, corresponding to an applied bias voltage of only 6 V. XBIC mapping of the membrane showed an inhomogeneity of more than 10% across the membrane, corresponding to the measured variation in the thickness of the diamond plate before the plasma etching process. The measured XBIC signal‐to‐dark‐current ratio of the device was greater than 10⁵, and the X‐ray beam position resolution of the device was better than a micrometer for a 1 kHz sampling rate.     

Etching effect of the autocloning structure using ion-assisted deposition

Based on the autocloning technique the photonic crystals were fabricated using E-beam gun evaporation with ion-assisted deposition (IAD) on the periodic corrugation patterns of substrates. In this research, the surface evolution function based on the unified process model was simulated to analyze the influence of the etching and redeposition effects of the different etching time. As the etching time was longer, the top roof angle was larger and the redeposition thickness was getting thicker. The difference of the top roof angle in the experiment and the simulated result are less than 4°. It shows the simulation method achieved very good agreement with the fabricated result for different etching times from 40 to 120 min. We found the surface angular was depended on the etching effect more than the redeposition effect.     

消除半导体激光诱导腐蚀晶向影响的两步腐蚀新方法

提出了一种消除激光化学诱导液相腐蚀晶体取向影响的新方法———两步腐蚀法。激光化学液相两步腐蚀法实质上是加长非晶向方向图形的腐蚀时间,保证与晶向方向腐蚀程度一致。实验结果表明,晶体取向对激光化学诱导液相腐蚀图形有较大的影响;两步腐蚀法可以有效地消除晶体取向影响,得到需要的图形;与国内外普遍采用的表面抗蚀膜掩蔽和激光光强分布调节等方法相比,具有可以处理内部晶向影响,操作简单,设备要求低等特点,两步腐蚀法可以有效地克服常规方法的诸多弊端,达到消除晶向影响的目的,在特殊结构光电器件和光电集成中具有广泛的应用前景。     

导流型热蒸发沉积制备微球表面聚酰胺酸涂层

 在自行研制的导流型热蒸发沉积装置上开展了微球表面聚酰胺酸（PAA）涂层制备工艺研究。探讨了单体原料处理和改变升温过程对沉积速率的影响。两种单体分别采用两个相互独立的蒸发源加热蒸发,使用两个晶振膜厚测量探头,通过对膜厚探头、样品盘和导流管端头三者的空间位置和对称关系的调整和实验标定,实现了两种单体近似等化学计量比的沉积。采用间歇性压电振动或敲击配合样品盘的旋转作为微球运动的激励方式,在聚-α-甲基苯乙烯（PAMS）微球上制备出均匀的表面质量好的PAA涂层。     

石英晶体振荡法监控膜厚研究

给出了石英晶体振荡法监控膜厚的基本原理,在相同的工艺条件下分别用光电极值法和石英晶体振荡法监控膜厚,对制备的增透膜的反射光谱曲线进行了比较,并对石英晶体振荡法的监控结果做了误差分析.结果表明:石英晶体振荡法不仅膜厚监控精度高,而且能监控沉积速率,获得稳定的膜层折射率,从而有效地控制薄膜的光学性能.     

电化学制备薄黑硅抗反射膜

采用计算机控制电流密度按指数规律衰减对单晶硅进行电化学腐蚀,得到了折射率随薄膜厚度连续均匀变化的抗反射膜,即黑硅样品. 这种在制取上快速、经济和工艺非常简单的样品,不仅在较宽波段范围内反射率小于5%,且整个薄膜厚度不足1μm. 利用传输矩阵方法对黑硅样品的反射谱进行模拟,得到了理论与实验符合较好的结果. 关键词： 多孔硅 折射率 抗反射膜 黑硅     

Molecular dynamics simulations of reactive etching of SiC by energetic fluorine

Molecular dynamics simulations were performed to investigate F continuously bombarding Si-terminated 3C-SiC(001) surfaces with incident energies of 10, 100 and 200 eV at normal incidence and room temperature. For an energy of 10 eV, deposition only occurs on the surface. For energies larger than 10 eV, accompanying the saturation of F uptake, a balance between F deposition from the incident atoms and F removal from the fluorinated substrate is established, while the steady-state etching is reached. The simulated results demonstrate that Si atoms in SiC are preferentially etched, which is in good agreement with experiments. The preferential etching of Si results in formation of a C-rich interfacial layer whose thickness increases with increasing incident energy. The analysis shows that Si-containing etch products are dominant. PACS 52.65.Yy; 81.65.Cf; 52.77.Dq     

Fe-C合金膜光纤腐蚀传感器传感规律研究

利用PVD溅射镀以及PVD与电镀复合两种方法在光纤纤芯上制备了不同厚度的Fe-C合金膜,对其进行X-射线衍射分析,所制膜层晶体结构类型与普通碳钢基本一致.通过将镀膜光纤放入不同浓度的HNO3溶液中以及埋入混凝土结构中,进行了腐蚀实验.结果表明:在低浓度的腐蚀溶液中,不同厚度的Fe-C合金膜会从外到内被均匀地腐蚀掉,输出光功率会在腐蚀末期有一个急剧的增大现象;在高浓度的腐蚀溶液中,Fe-C合金膜会在各个局部产生裂纹,膜层被一块一块地腐蚀掉;输出光功率整体趋势增大,但并没有特别急剧的增大现象;混凝土试块中的腐蚀实验中,输出光功率的变化复杂多变,但整体趋势还是一个增大的过程.