Orientation dependence of electrical properties of 0.96Na<Subscript>0.5</Subscript>Bi<Subscript>0.5</Subscript>TiO<Subscript>3</Subscript>-0.04BaTiO<Subscript>3</Subscript> lead-free piezoelectric single crystal

In this paper, a single crystal of 0.96Na_0.5Bi_0.5TiO₃-0.04BaTiO₃ with dimensions of Φ 30×10 mm was grown by the top-seeded-solution growth method. X-ray powder diffraction results show that the as-grown crystal possesses the rhombohedral perovskite-type structure. The dielectric, piezoelectric and electrical conductivity properties were systematically investigated with 〈001〉, 〈110〉 and 〈111〉 oriented crystal samples. The room-temperature dielectric constants for the 〈001〉, 〈110〉 and 〈111〉 oriented crystal samples are found to be 650, 740 and 400 at 1 kHz. The (T _m, ε _m) values of the dielectric temperature spectra are almost independent of the crystal orientations; they are (306°C, 3718), (305°C, 3613) and (307°C, 3600) at 1 kHz for the 〈001〉, 〈110〉 and 〈111〉 oriented crystal. The optimum poling conditions were obtained by investigating the piezoelectric constants d ₃₃ as a function of poling temperature and poling electric field. For the 〈001〉 and 〈110〉 crystal samples, the maximum d ₃₃ values of 146 and 117 pC/N are obtained when a poling electric field of 3.5 kV/mm and a poling temperature of 80°C were applied during the poling process. The as-grown 0.96Na_0.5Bi_0.5TiO₃-0.04BaTiO₃ crystal possesses a relatively large dc electrical conductivity, especially at higher temperature, having a value of 1.98×10⁻¹¹ Ω⁻¹⋅m⁻¹ and 3.95×10⁻⁹ Ω⁻¹⋅m⁻¹ at 25°C and 150°C for the 〈001〉 oriented crystal sample.     

Spontaneous photorefractive effect in Sr1−x CaxTiO3 (x=0.014)

The temperature dependence of the principal values of the refractive index in Sr_1−x Ca_xTiO₃ (x=0.014) has been measured in the 17–275 K range under various conditions of sample illumination with 1.96 eV photons. The spontaneous photorefractive contribution δn ^ph to the temperature-induced variation of the refractive index of Sr_1−x Ca_xTiO₃, which appears after illumination of the sample in the ferrophase (transition temperature T _c=32 K) and persists in the paraphase under heating up to 150 K, has been separated. The photoinduced polarization has been estimated. Fiz. Tverd. Tela (St. Petersburg) 39, 711–713 (April 1997)     

Polarization characteristics of graded thick Ba<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Sr<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>TiO<Subscript>3</Subscript> films

The barium strontium titanate ceramics Ba_{1 − x} Sr _x TiO₃ with a spatially variable composition has been prepared according to the thick film technology (tape casting). The strontium content over the film thickness is varied from 0 to 30 mol %. The structure and polarization characteristics of the samples prepared have been investigated. It has been found that the polarization characteristics of multilayer structures are determined by the ratio between the thicknesses of layers with different compositions and by their properties. No shift of the hysteresis loops in the graded thick Ba_{1 − x} Sr _x TiO₃ ( _x = 0–0.3) films has been revealed. The results obtained have been analyzed in the framework of modern theoretical approaches.     

Structure, ferroelectric and piezoelectric properties of?(Bi0.98?xLa0.02Na1?x)0.5BaxTiO3 lead-free ceramics

Lead-free (Bi_0.98−x La_0.02Na_1−x )_0.5Ba _x TiO₃ ceramics have been prepared by an ordinary sintering technique and their structure, ferroelectric and piezoelectric properties have been studied. The results of X-ray diffraction show that La²⁺ and Ba²⁺ diffuse into the Bi_0.5Na_0.5TiO₃ lattices to form a new solid solution with a pure perovskite structure, and a morphotropic phase boundary (MPB) exists at 0.04<x<0.10. Compared with pure Bi_0.5Na_0.5TiO₃ ceramics, the (Bi_0.98−x La_0.02Na_1−x )_0.5Ba _x TiO₃ ceramics possess much smaller coercive field E _c and larger remanent polarization P _r. Because of the low E _c (3.38 kV/mm), large P _r (46.2 μC/cm²) and the formation of the MPB of rhombohedral and tetragonal phases, the piezoelectric properties of the ceramics are significantly enhanced at x=0.06: d ₃₃=181 pC/N and k _p=36.3%. The depolarization temperature T _d reaches a minimum value near the MPB. The ceramics exhibit relaxor characteristic, which is probably a result from the cation disordering in the 12-fold coordination sites. The temperature dependences of the ferroelectric and dielectric properties suggest that the ceramics may contain both polar and non-polar regions at the temperatures above T _d.     

Overall values of conventional discrepancy indices for crystals with heavy atoms. Part II. Results for monoclinic and orthorhombic crystals when the heavy-atom part alone constitutes the model

Theoretical expressions of 〈y _N〉, 〈|y _N − σ₁ y _P ^c |〉 and 〈|y _N ² −σ ₁ ² (y _P ^c )²|〉 (wherey _N andy _P ^c are the normalized structure amplitudes of the structure and the model respectively) are derived in terms of the heavy atom contributionσ ₁ ² for monoclinic and orthorhombic crystals containing a few (i.e., 1 or 2) heavy atoms of the same kind per asymmetric unit by taking the heavy atom part alone as the model. Results are obtained for both the related and unrelated cases. The local values of 〈y _N〉 and 〈|y _N ⁿ − σ ₁ ⁿ (y _P ^c ) ⁿ |〉, (n=1, 2) calculated from these expressions can be used to calculate the overall values of the conventionalR-indicesR(F) andR(I) for the related and unrelated cases. These overall values could be used to check the correctness of heavy atoms located in the structure. Contribution No. 550     

Growth of Ba2−x Sr x NaNb5O15 thin film on La0.05Sr0.95TiO3 substrate by pulsed laser deposition

Ba_2−x Sr _x NaNb₅O₁₅ thin films were prepared on La_0.05Sr_0.95TiO₃ substrates by pulsed laser deposition. The structural and ferroelectric properties of the thin films depended on substrate temperature (T _sub) and Sr concentration. When T _sub was fixed at 700 °C, the Ba_2−x Sr _x NaNb₅O₁₅ (x = 0, 0.6, 1.0, and 1.4) thin films exhibited a high c-axis orientation. The thin films consisted of well-developed grains and exhibited a smooth surface. The c-axis-oriented Ba_0.6Sr_1.4NaNb₅O₁₅ thin film with the lowest Curie temperature also exhibited a high c-axis orientation and a P-E hysteresis loop with a high ferroelectricity at T _sub 650 °C. Thus, its remanent polarization (P _r) and coercive field (E _c) were 2P _r 24.9 μC/cm² and 2E _c 107 kV/cm, respectively. These values indicate that Ba_2−x Sr _x NaNb₅O₁₅ has ferroelectricity in the thin film form.     

Polarization of leading Λ hyperons produced by neutrons on target nuclei

The polarization of the leading Λ hyperons produced on carbon and lead target nuclei by 4–10 GeV neutrons in the angle range Θ<8.5° with respect to the beam and with only neutral-particle accompaniment is measured: 〈Π〉=−0.096±0.018 for C and 〈Π〉=− 0.128±0.047 for Pb. The dependence of the polarization on the transverse momentum and the Feynman variable is measured. The normalized invariant cross section as a function of p _⊥ ² is found to be approximated by the function A exp(−Bp _⊥ ² ), where the parameter B is independent of the kind of nucleus (B=8.71±0.09 (GeV/c)⁻² for carbon and B=8.83±0.18 (GeV/c)⁻² for lead). Pis’ma Zh. éksp. Teor. Fiz. 64, No. 4, 237–240 (25 August 1996)     

A comparative microstructural study of compositionally up- and down-graded (Ba,Sr)TiO3 thin films epitaxially grown on (La,Sr)CoO3-covered MgO(100) substrates by pulsed laser deposition

We report a comparative study of the microstructure of compositionally graded (Ba_1-xSr_x)TiO₃ (BST) films with two compositionally graded directions, up and down, with respect to the substrate, which were deposited epitaxially on (La,Sr)CoO₃ (LSCO)-covered MgO(100) single-crystal substrates by pulsed laser deposition. Cross-sectional transmission electron microscopy (TEM) images and electron diffraction show that the graded films grow epitaxially with their (100) plane parallel to the (100) surface of the MgO single-crystal substrate, and with an in-plane orientation relationship of 〈001〉_BST//〈001〉_LSCO//〈001〉_MgO. The crystalline quality and surface morphology of the graded films are closely related to the direction of the compositional gradient built into the graded films. Down-graded films (starting with a BaTiO₃ layer at the film/substrate interface) have a much better crystalline quality and a smoother surface than the up-graded films (starting with a (Ba_0.75Sr_0.25)TiO₃ layer at the film/substrate interface). Obviously, the BaTiO₃ bottom layer in the down-graded film acts not only as a part of the graded film but also as an excellent seeding layer to enhance the crystallization of the subsequent film layers, resulting in a high crystalline quality of the down-graded film and an enhanced dielectric behavior. Planar (high-resolution) TEM images also demonstrate that down-graded films have a larger, and more uniform, grain size than up-graded films, and that the latter contain voids. PACS 81.15.-z; 77.55.+f; 68.37.Lp; 61.14.-x     

The superconducting properties of YBa2(Cu1−xMx)3O7 for M=Zn and Ni

Transverse and zero-field μSR measurements were made on YBa₂(Cu_1−xNi_x)₃O_7−y withx=0.1 and 0.2, and YBa₂(Cu_1−x Zn _x )₃O_7−y withx=0.03, 0.06, 0.1, and 0.16, wherey≈0.1. Since doping may lead to magnetic ordering this was searched for with both zero and transverse field μSR, but no evidence was found over the temperature range studied: 10–100 K. However, depolarization rates as functions of temperature were obtained, and the low temperature values of these are σ=3.2 μs⁻¹.1.6μs⁻¹, and 1 μs⁻¹ forx=0.01, and 0.2 Ni, respectively, and σ=0.8 μs⁻¹, 0.75 μs⁻¹, 0.65 μs⁻¹, and 0.4 μs⁻¹ forx=0.03, 0.06, 0.1, and 0.16 Zn, respectively. Estimates for the effect of decreasing electron concentration for Zn are made, but these alone do not account for the drop in σ. Estimates for the effect of scattering on λ and hence σ are made. The reduction in σ for Ni dopant is in surprisingly good agreement with these estimates. For Zn the order of magnitude is correct, but the relative lack of further change in σ after the effect of the first 0.03 addition seems to imply a saturation of the effect of scattering.     

Ferroelectric properties of SrTiO3-PbTiO3 solid solutions

Dielectric properties of ceramic samples of Sr_1−x Pb_xTiO₃ solid solutions for x varying from 0 to 0.3 have been studied. The ferroelectric phase transition in this system has been established to persist down to x=0.005. Within the x values of 0.002 to 0.05, the ferroelectric transition temperature is shown to follow the relation T _c=A(x−x _c)^1/2, with A=440 K and x _c=0.002. Fiz. Tverd. Tela (St. Petersburg) 39, 714–717 (April 1997)     

Wave mechanics of two hard core quantum particles in A 1-D box

The wave mechanics of two impenetrable hard core particles in a 1-D box is analyzed. Each particle in the box behaves like an independent entity represented by a macro-orbital (a kind of pair waveform). While the expectation value of their interaction, 〈 V _HC (x) 〉, vanishes for every state of two particles, the expectation value of their relative separation, 〈 x 〉, satisfies 〈 x 〉≥λ/2 (or q ≥ π/d, with 2d=L being the size of the box). The particles in their ground state define a close-packed arrangement of their wave packets (with 〈 x 〉= λ/2, phase position separation Δϕ = 2π and momentum |q _o| = π/d) and experience a mutual repulsive force (zero point repulsion) f _o =h ²/2md ³ which also tries to expand the box. While the relative dynamics of two particles in their excited states represents usual collisional motion, the same in their ground state becomes collisionless. These results have great significance in determining a correct microscopic understanding of widely different many-body systems.     

The structure of mixed fluorides Ca1?xSrxF2 and Sr1?xBaxF2 and the luminescence of Eu2+ in these crystals

The structure of the mixed fluorites Ca_1−x Sr_xF₂ and Sr_1−x Ba_xF₂, as well as the structure of the Eu²⁺ impurity center in these crystals, is calculated within the framework of the virtual-crystal method realized in the shell model and pair-potential approximation. The phenomenological dependence of the position of the lower level of the 4f ⁶5d configuration of the Eu²⁺ ion on distance to the Eu²⁺-ligand is derived. The dependences of the Stokes shift and the Huang-Rhys factor on x are calculated for the yellow luminescence in Sr_1−x Ba_xF₂:Eu²⁺. The value of x at which the lower level of the 4f ⁶5d configuration of the Eu²⁺ ion in Sr_1−x Ba_xF₂:Eu²⁺ falls within the conduction band is found. __________ Translated from Fizika Tverdogo Tela, Vol. 45, No. 5, 2003, pp. 823–826. Original Russian Text Copyright ? 2003 by Nikiforov, Zakharov, Chernyshev, Ugryumov, Kotomanov.     

Double-beta decay: Present status

The present status of double-beta-decay experiments (including the search for 2β ⁺, ECβ ⁺, and ECEC processes) are reviewed. The results of the most sensitive experiments are discussed. Average and recommended half-life values for two-neutrino double-beta decay are presented. Conservative upper limits on effective Majorana neutrino mass and the coupling constant of the Majoron to the neutrino are established as 〈m _ν 〉 < 0.75 eV and 〈g _ee 〉 < 1.9 × 10⁻⁴, respectively. Proposals for future double-betadecay experiments with a sensitivity for the 〈m _ν 〉 at the level of 0.01–0.1 eV are considered.     

Effect of Sr<Superscript>2+</Superscript> ion substitution with trivalent ions (Sc<Superscript>3+</Superscript>, In<Superscript>3+</Superscript>, La<Superscript>3+</Superscript>, Bi<Superscript>3+</Superscript>) on its ferroelectric instability in SrTiO<Subscript>3</Subscript>

The vibration frequencies of unstable ferroelectric and antiferrodistortion modes and the dependences of the energy on the ion displacement amplitude have been calculated within the generalized Gordon-Kim model for distortions along eigenvectors of these modes in the mixed compounds Sr_{1 − x} A _x Ti_{1 − x} /₄□ _x/4O₃ and Sr_{1 − y} A _2y /₃□ _y/3TiO₃ (A = Sc³⁺, In³⁺, La³⁺, Bi³⁺; □ is the vacancy). To compensate an excess positive charge, vacancies are introduced into the Ti⁴⁺ or Sr²⁺ site. Calculations have been performed in the “daverage” crystal approximation for impurity concentrations of 0.25 and 0.50. To this end, a set of 40 atomic superlattices with various orderings of heterovalent ions Sr²⁺ and impurity A ³⁺ has been considered. It has been found that each impurity type, independently of charge balance, induces ferroelectric instabilities in doped compounds. In the case of doping with In³⁺ and La³⁺ for concentration x = 0.25, the possibility of rotating the polarization vector has been shown.     

Enhanced spontaneous polarization in Sr and Ca co-doped BaTiO3 ceramics

The dielectric and ferroelectric properties of (Ba_xSr_1−x)_0.77Ca_0.23TiO₃ ceramics with x=1 to 0.7 were studied and compared with those of Ba_xSr_1−xTiO₃ and Ba_0.77Ca_0.23TiO₃ ceramics. It has been found that Sr doping of the Ba_0.77Ca_0.23TiO₃ ceramics causes a drastic decrease of the Curie temperature, just like Sr doping of pure BaTiO₃ ceramics, demonstrating a cell volume effect. However, the (Ba_xSr_1−x)_0.77Ca_0.23TiO₃ ceramics with x=0.9 and 0.8 have larger spontaneous polarization than those of the corresponding Ba_xSr_1−xTiO₃ and Ba_0.77Ca_0.23TiO₃ ceramics, along with sufficient insulating properties. The enhancement of their polarization was explained by the increase of the lattice parameter c/a ratio due to the lattice distortion and strain developed in the ceramics.     

Ion transport in the anion-deficient nonstoichiometric phases La0.95(Ba1−x Srx)0.05F2.95 (0⩽x⩽1)

The fluoride-ion conductivity of the nonstoichiometric tysonite phases La_0.95(Ba_1−x Sr_x)_0.05Fe_2.95 (0⩽x⩽1) is investigated by impedance spectroscopy. Electrophysical measurements are performed in the frequency range 5–5×10⁵ Hz and temperature range 300–700 K. A discontinuity is observed in the temperature dependence of the conductivity at T _c=410–430 K. The behavior of the temperature dependence of the electrical conductivity is explained within a transport model taking into account the migration of fluoride ions between different inequivalent structural sites. The maximum value of the conductivity at room temperature (293 K) is 2×10⁻⁴ Ω⁻¹ cm⁻¹ for the solid solution La_0.95Sr_0.05F_2.95. The fluorine-ion conductivity in La_0.95(Ba_1−x Sr_x)_0.05F_2.95 single crystals is almost an order of magnitude larger than the value for the commercial solid electrolyte La_0.992Eu_0.008F_2.992 (a fluorine-selective membrane) having a tysonite structure. Fiz. Tverd. Tela (St. Petersburg) 40, 658–661 (April 1998)     

Low temperature photoconductivity of Pb1?xSnxTe?In? films at millimeter wavelengths

Photoconductivity of single crystal Pb_1−xSn_xTe〈In〉, (0.24≤x≤0.25), films at 4.2K in the wavelength region 4÷5 mm and magnetic fields up to 8 T was studied. Preparation technology of the films with high photoconductivity (P_FEP ≤ 10⁻¹² W×Hz^1/2) and photoresponsiveness (τ ≤ 10⁻⁶ s), as well as the measurements procedure are described in the paper. Also the mechanism of photoconductivity is discussed.     

Gradient-stress on polarization in Ba1-xSrxTiO3 films

A group of position-thickness-dependent stresses are used to modified Landau-Devonshire theory to investigate the second-order phase transition in Ba_1−x Sr _x TiO₃ films. The result shows that the short-range interaction between the unit cells of the film and the substrate induces the phase transition dispersion and the rise of the transition temperature in the films. The dependence of the effective dielectric constant on the temperature and the average spontaneous polarization on the film thickness are computed, which qualitatively agree with the experiments.      

Realization of a heavily doped and fully compensated semiconductor state in a crystalline semiconductor with a deep impurity band

We use the data on the pressure (up to P=1.5 GPa) and field (up to H=17 kOe) dependence of the Hall coefficient and the resistivity at 77.6 and 300 K in p-CdSnAs₂〈Cu〉 to calculate the effective kinetic characteristics of the charge carriers, the density and mobility of the conduction electrons and the holes of the deep acceptor and valence bands, in an interval of excess-acceptor densities N _ext ranging from 10¹⁰–10¹⁷ cm⁻³. We establish that in a heavily doped semiconductor with a deep impurity band at the tail of the density of states of the intrinsic band, with unequal donor and acceptor densities, a a heavily doped and fully compensated semiconductor state is realized under hydrostatic compression. The threshold value of the pressure that initiates the transition into such a state, P _c, depends on the extent to which the impurity band is populated. In p-CdSnAs₂〈Cu〉 at N _ext=N _A, where N _A is the density of deep acceptors, and T⩽77.6 K the value of P _c amounts to 10⁻⁴ GPa. As the population of the deep acceptor band grows, P _c increases and in the limit becomes infinite. We discuss the special features of the electrophysical properties of p-CdSnAs₂〈Cu〉 arising from the absence of an energy gap between the states of the conduction band and those of the deep acceptor band. Zh. éksp. Teor. Fiz. 111, 562–574 (February 1997)     

Λ and K s 0 production in pC collisions at 10 GeV/c

The experimental data from the 2-m propane bubble chamber have been analyzed for pC → Λ(K _s ⁰ )X reactions at 10 GeV/c. The estimation of experimental inclusive cross sections for Λ and K _s ⁰ production in the p ¹²C collision is equal to σ_Λ = (13.3 ± 1.7) mb and σ _{K s} ⁰ = (4.6 ± 0.6) mb, respectively. The measured 〈Λ〉/〈π⁺〉 ratio from pC reaction is equal to (5.3 ± 0.8) × 10⁻², and it is approximately two times larger than the 〈Λ〉/〈π⁺〉 ratio simulated by the FRITIOF model and than that of experimental pp reactions at the same energy. The text was submitted by the authors in English.