Template synthesis of Y-junction metal nanowires

Template synthesis of large-scale Y-junction metal nanowires is reported. In this approach, a Y-shaped nanochannel porous anodic alumina (PAA) template is prepared by using a two-step anodization of aluminum in which the metal of interest, such as copper, is electrodeposited to form the Y-junction metal nanowires. The synthesis method presented here is simple and versatile. This method can be extended to the preparation of other Y-junction nanowires with desirable composition and shows great promise for the development of nanoelectronics. Received: 10 September 2001 / Accepted: 20 November 2001 / Published online: 23 January 2002     

Copper nanowire arrays for infrared polarizer

A micropolarizer of copper nanowire arrays within anodic alumina membrane (AAM) was fabricated by anodization of pure Al foil and electrodeposition of Cu, respectively. X-ray diffraction, scanning electron microscopy and transmission electron microscopy investigations reveal that the ordered Cu nanowires are essentially single crystal, and have an average diameter of 90 nm. Spectrophotometer measurements show that the copper nanowire arrays embedded in AAM can only transmit polarized light vertical to the wires. An extinction ratio of 24 to 32 dB and an average insertion loss of 0.5 dB in the wavelength range of 1 to 2.2 μm were obtained, respectively. Therefore Cu nanowire/AAM can be used as a wire grid type micropolarizer. Received: 28 January 2002 / Accepted:17 May 2002 / Published online: 22 November 2002 RID="*" ID="*"Corresponding author. Fax: +86-551/559-1434, E-mail: ytpang@263.net     

Electrochemical synthesis of ordered CdTe nanowire arrays

Semiconductor CdTe nanowire arrays embedded in the nanochannels of the porous anodic alumina (PAA) template have been prepared by using a potentiostatic electrochemical deposition method. The morphology and structure of the CdTe nanowire arrays have been characterized by X-ray powder diffraction, transmission electron microscopy, and high-resolution transmission electron microscopy. It is found that the CdTe nanowires with diameters and lengths of about 60 nm are single-crystalline with cubic phase structure, uniformly and continuously embedded in the nanochannels of the PAA template. X-ray energy-dispersion analysis and X-ray photoelectron spectroscopy analysis indicate that stoichiometric CdTe was formed. The growth mechanism of the CdTe nanowires is also discussed. Received: 11 June 2002 / Accepted: 2 July 2002 / Published online: 8 January 2003 RID="*" ID="*"Corresponding author. Fax: +86-551/559-1434, E-mail: aiwuzhao@yahoo.com.cn     

Fabrication, morphology and structural characterization of ordered single-crystal Ag nanowires

Highly aligned Ag nanowires have been synthesized by dc electrodeposition within a hexagonal close-packed nanochannel anodic aluminum oxide template. The pore diameter varies from 20 nm to 50 nm depending on the anodization voltage and temperature for the two types of aqueous solutions, sulphuric and oxalic acids, respectively. The size and morphology of the Ag nanowire arrays were measured by scanning electron microscopy and transmission electron microscopy. The images indicate that the highly aligned Ag nanowires grow in the uniform nanochannels of the anodic alumina template and that the size of the nanowires depends on the size of the nanochannels. X-ray diffraction, selected area electron diffraction pattern and high-resolution transmission electron microscopy images show that the Ag nanowires are single-crystal. The temperature coefficient of resistivity (temperature range from 4.2 K to 300 K) of the Ag nanowire arrays decreases with decreasing diameter of the nanowires. Received: 5 November 2001 / Revised version: 12 March 2002 / Published online: 6 June 2002     

Single-electron tunneling in silicon nanostructures

We present a brief overview on different realizations of single-electron devices fabricated in silicon-on-insulator films. Lateral structuring of highly doped silicon films allows us to observe quasi-metallic Coulomb blockade oscillations in shrunken wires where no quantum dot structure is geometrically defined. Embedding quantum dot structures into the inversion channel of a silicon-on-insulator field-effect transistor Coulomb blockade up to 300 K is observed. In contrast to the quasi-metallic structures, in these devices the influence of the quantum mechanical level spacing inside the dot becomes visible. Suspending highly doped silicon nanostructures leads to a novel kind of Coulomb blockade devices allowing both high-power application as well as the study of electron–phonon interaction. Received: 14 April 2000 / Accepted: 17 April 2000 / Published online: 6 September 2000     

Effect of vapor attenuation in surface ablation of cobalt by pulsed UV laser

Numerical calculations based on a thermal model were presented, which describe the process of target heating and ablation of cobalt during irradiation by 30-ns laser pulses at 308 nm. The attenuation of laser by vapor has been taken into account in this model. As results of the calculations, the temperature distribution beneath the target surface and the temporal evolution of surface temperature were given. The dependence of ablation rate on laser fluence was also studied based on this model. The surface ablation of cobalt with pulsed excimer laser was investigated experimentally. Our model considering proper vapor attenuation has shown to be in good agreement with the experimental results. Received: 20 January 2000 / Accepted: 13 March 2000 / Published online: 5 July 2000     

Synthesis of aligned gallium nitride nanowire quasi-arrays

Self-aligned GaN nanowire quasi-arrays were synthesized on MgO crystal through a simple gas reaction method. They were characterized by powder X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray (EDX) spectroscopy and high-resolution transmission electron microscopy (HRTEM). FE-SEMimages showed that the product consisted of quasi-arrays of nanowires. XRD, EDX and HRTEM indicated that the nanowires were wurtzite GaN single crystals. Received: 19 June 2000 / Accepted: 21 June 2000 / Published online: 9 August 2000     

The synthesis of highly oriented GaN nanowire arrays

Highly oriented GaN nanowire arrays have been achieved by the catalytic reaction of gallium with ammonium. The resulting materials were characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), transmission electron microscopy (TEM) and selected-area electron diffraction (SAED). SEM images show that the resulting materials are nanowire arrays with a uniform length of about 10 μm. XRD, EDS, TEM and SAED indicate that the nanowire arrays are single-crystal hexagonal GaN with a wurtzite structure. They have diameters of 10 to 20 nm. Received: 2 October 2002 / Accepted: 7 October 2002 / Published online: 17 December 2002 RID="*" ID="*"Corresponding author. E-mail: wwwangjc@sina.com     

Synthesis and photoluminescence of aligned SiO<Subscript>x</Subscript> nanowire arrays

Aligned SiO_x nanowire arrays standing on a Si substrate were successfully synthesized using a simple method by heating a single-crystalline Si slice covered with SiO₂ nanoparticles at 1000 °C in a flowing Ar atmosphere. The SiO_x nanowire arrays were characterized by scanning electron microscopy and transmission electron microscopy. The SiO_x nanowires become progressively thinner from bottom to top. The formation process of the SiO_x nanowire arrays is closely related to a vapor–solid mechanism. Room-temperature photoluminescence measurements under excitation at 260 nm showed that the SiO_x nanowire arrays had a strong blue–green emission at 500 nm (about 2.5 eV), which may be related to oxygen defects. Received: 29 April 2002 / Accepted: 30 April 2002 / Published online: 10 September 2002 RID="*" ID="*"Corresponding author. Fax: +86-551-559-1434, E-mail: gwmeng@mail.issp.ac.cn     

Phase transformation during surface ablation of cobalt-cemented tungsten carbide with pulsed UV laser

Surface ablation of cobalt-cemented tungsten carbide hard metal has been carried out in this work using a 308 nm, 20 ns XeCl excimer laser. Surface microphotography and XRD, as well as an electron probe have been used to investigate the transformation of phase and microstructure as a function of the pulse-number of laser shots at a laser fluence of 2.5 J/cm². The experimental results show that the microstructure of cemented tungsten carbide is transformed from the original polygonal grains of size 3 μm to interlaced large, long grains with an increase in the number of laser shots up to 300, and finally to gross grains of size 10 μm with clear grain boundaries after 700 shots of laser irradiation. The crystalline structure of the irradiated area is partly transformed from the original WC to βWC_1-x, then to αW₂C and CW₃, and finally to W crystal. It is suggested that the undulating ‘hill–valley’ morphology may be the result of selective removal of cobalt binder from the surface layer of the hard metal. The formation of non-stoichiometric tungsten carbide may result from the escape of elemental carbon due to accumulated heating of the surface by pulsed laser irradiation. Received: 13 July 2000 / Accepted: 27 October 2000 / Published online: 10 January 2001     

Hysteresis in current transport in a GaAs diode containing self-assembled InAs quantum dots

We have observed hysteresis loops in current transport in a GaAs metal–semiconductor–metal diode containing InAs quantum dots. The dots in our structure are directly embedded under the GaAs–metal interface. The charging and discharging of electrons in the dots modulate the current and produce hysteresis. These processes are controlled by the applied voltages. The dots are charged by forward current flowing through the structure. The discharging of the electrons is dominated by the tunneling process under high reverse bias. The modulated currents are well fitted with an electron-trapping model considering both the ground states and the excited states of the quantum dots. Received: 5 October 2000 / Accepted: 12 December 2000 / Published online: 23 May 2001     

Large-scale synthesis of SnO2 nanobelts

Tin dioxide (SnO₂) nanobelts have been successfully synthesized in bulk quantity by a simple and low-cost process based on the thermal evaporation of tin powders at 800 °C. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) observations reveal that the nanobelts are uniform, with lengths from several-hundred micrometers to a few millimeters, widths of 60 to 250 nm and thicknesses of 10 to 30 nm. X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX) and selected-area electron diffraction analysis (SAED) indicate that the nanobelts are tetragonal rutile structure of SnO₂. The SnO₂ nanobelts grow via a vapor–solid (VS) process. Received: 3 June 2002 / Accepted: 10 June 2002 / Published online: 10 September 2002 RID="*" ID="*"Corresponding author. Fax: +86-551/559-1434, E-mail: gwmeng@mail.issp.ac.cn     

Organisation of carbon and boron nitride layers in mixed nanoparticles and nanotubes synthesised by arc discharge

2 bonds attests for the presence of ordered BN domains and of carbon domains; (ii) the elemental profiles show that BN layers and carbon layers are immiscible with a radial organisation into two to five domains; and (iii) the sets of layers at free surfaces – including the inner surfaces of tubes – are always made of carbon. The origin of this chemical organisation, which is most likely obtained during the growth, is discussed. For the hafnium-boride metallic particles coated by C/BN envelopes, a model based on the solidification from the outside to the inside of isolated liquid-like droplets is proposed: the carbon phase solidifies first according to theoretical phase diagrams, and forms the outer shells. For the tubes, a directional eutectic solidification process is shown to account for the observed C/BN/C sequence, in a vapour–liquid–solid scheme, with an hafnium-rich liquid-like particle at the tip of the tube. Received: 26 November 1998 / Accepted: 14 January 1999     

High-yield synthesis of multi-walled carbon nanotubes by arc discharge in liquid nitrogen

Synthesis of multi-walled carbon nanotubes (MWNTs) by arc discharge in liquid nitrogen is reported. As liquid nitrogen substituted both vacuum and cooling systems, high-quality MWNTs were produced at a low cost. The content of the MWNTs can be as high as 70% of the reaction product. Auger-spectroscopy analysis revealed that no nitrogen is incorporated in the MWNTs. This method can be an economical route for the mass production of highly crystalline MWNTs. Received: 5 July 2002 / Accepted: 8 July 2002 / Published online: 10 September 2002 RID="*" ID="*"Corresponding author. Fax: +82-54/279-8298, E-mail: ce20047@postech.ac.kr     

2.0-MeV Er+ implanted in silicon: depth distribution, damage profile and annealing behaviour

Si crystals were implanted with 2.0- MeV Er⁺ at the doses of 5×10¹² ions/cm², 1×10¹⁴ ions/cm², 5×10¹⁴ions/cm², 1×10¹⁵ ions/cm² and 2.5×10¹⁵ ions/cm². Conventional furnace thermal annealing was carried out in the temperature range from 600 °C to 1150 °C. The depth distribution of Er, associated damage profiles and annealing behavioar were investigated using the Rutherford backscattering spectrometry and channelling (RBS/C) technique. A proper convolution program was used to extract the distribution of Er from the experimental RBS spectrum. The obtained distribution parameters, projected range R_p, projected range straggling ΔR_p and skewness SK were compared with those of TRIM96 calculation.The experimental R_p and SK values agree well with the simulated values, while the experimental ΔR_p is larger than TRIM 96 simulated value by a factor of 18%. The damage profile of silicon crystal induced by 2.0-MeV Er⁺ at a dose of 1×10¹⁴ ions/cm² was extracted using the multiple-scattering dechannelling model based on Feldman’s method, which is in a good agreement with the TRIM96 calculation. For the samples with dose of 5×10¹⁴ ions/cm² and more, an abnormal annealing behavioar was found and a qualitative explaination has been given. Received: 11 October 1999 / Accepted: 28 March 2000 / Published online: 5 July 2000     

Large-scale synthesis of In2O3 nanowires

In₂O₃ nanowires have been successfully fabricated on a large scale from indium particles by thermal evaporation at 1030 °C. The as-synthesized products were characterized by powder X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). SEM and TEM images show that these nanowires are uniform with diameters of about 60–120 nm and lengths of about 15–25 μm. XRD and selected-area electron diffraction analysis together indicate that these In₂O₃ nanowires crystallize in a cubic structure of the bixbyite Mn₂O₃ (I) type (also called the C-type rare-earth oxide structure). The growth mechanism of these nanowires is also discussed. Received: 29 June 2001 / Accepted: 28 September 2001 / Published online: 20 December 2001     

Electrochemical synthesis of polypyrrole/carbon nanotube nanoscale composites using well-aligned carbon nanotube arrays

Polypyrrole/carbon nanotube nanoscale composites were successfully fabricated by electrochemical deposition of polypyrrole over each of the carbon nanotubes in well-aligned large arrays. The thickness of the polypyrrole coating can be easily controlled by the value of the film-formation charge. For both thin (low film-formation charge) and thick (high film-formation charge) films, the polypyrrole coating on the surface of each nanotube is very uniform throughout the entire length, as observed by transmission electron microscopy. Received: 2 May 2001 / Accepted: 4 May 2001 / Published online: 20 June 2001     

The application of new nanocomposites: Enhancement effect of polylactide nanofibers/nano-TiO2 blends on biorecognition of anticancer drug daunorubicin

In this contribution, the blending of nano-titanium dioxide (TiO₂) and polylactide (PLA) nanofibers has been adopted as a new nanomaterial to facilitate the biorecognition of an anticancer drug daunorubicin. Our observations demonstrate that upon application of the nano-TiO₂-PLA polymer nanocomposites, the drug molecules could be readily self-assembled on the surface of the new nanocomposites so that considerably enhanced detection sensitivity for the DNA binding behavior could be observed for the relative biorecognition. These results may also imply some potential valuable application of the blending of nano-TiO₂ and PLA nanofibers as a kind of drug carriers in view of the respective good biocompatibility and large surface area of the new nanocomposites.     

Rate dependence of short-pulse laser ablation of metals in air and vacuum

Ablation rates of aluminum and stainless steel are studied as a function of fluence, hole depth, pulse duration and ambient pressure (air vs vacuum). We find a weak rate dependence on pulse duration from 150 fs to 500 ps, and a strong rate dependence on hole depth due to surface roughness. Machining in air plays an important role in deep holes, but has a weaker influence on initial surface ablation rates. Oxidation greatly reduces drilling rates for deep holes in aluminum. Received: 26 December 2001 / Accepted: 9 July 2002 / Published online: 4 November 2002 RID="*" ID="*"Corresponding author. Fax: +1-925/422-5537, E-mail: stuart3@llnl.gov