(Lu,Y)2SiO5∶Ce3+与SrSO4∶Dy3+材料低温热释光及其测试仪器的研究

为了分析材料在低温下的陷阱能级,获得更多有关缺陷结构的信息,研制了一套由STM32微控制器为核心的低温热释光发光谱测量系统。设计了低温样品室,采用液氮冷却样品;STM32通过控制加热电流,实现样品以恒定速率升温,从而获得低温热释光发光曲线或三维热释光谱。温度测量范围为85~400 K,升温速率范围为0.1~10 K/s。设计了由STM32控制X射线及紫外光源的驱动电路,用于样品的激发。采用高灵敏度CCD实现对三维热释光谱的测量,采用单光子计数器获取二维热释光发光曲线。利用该系统测试了（Lu,Y）₂SiO₅:Ce³⁺（LYSO:Ce³⁺）单晶闪烁体与SrSO₄:Dy³⁺粉末样品的热释光谱及辐射发光光谱。观察到LYSO:Ce³⁺在108,200,380 K左右的热释光峰,发光波长位于390~450 nm之间,是明显的宽带峰。在低温下由于基质的自陷激子（STE）发射所形成的发射峰在166 K时发生猝灭。在309 K时,Ce³⁺发射峰展宽为单一发射峰;SrSO₄:Dy³⁺发光峰温度为178,385 K,发光波长由Dy³⁺离子的能级跃迁决定,在480,575,660,750 nm处呈现窄带发光峰。结果表明,系统人机交互界面友好,实验数据可靠,智能化程度高,操作简单。     

Field emission properties and surface structure of nickel containing amorphous carbon

Nickel containing amorphous carbon (a-C:Ni) films have been deposited by filtered cathodic vacuum arc (FCVA) technique by introducing pure nickel into the graphite target. The field electron emission property of a-C:Ni was improved when compared to that of pure tetrahedral amorphous carbon (ta-C) by FCVA. The emission threshold field of a-C:Ni film is about 5 V μm⁻¹, whilst the threshold field of the ta-C film is about 13 V μm⁻¹. Raman spectroscopy suggests that the sp² clusters in the carbon film increase both in size and number when Ni is introduced. However, the emission was found to degrade to threshold fields beyond 20 V μm⁻¹ after the a-C:Ni film was left in ambient for a week. This observation is attributed to surface absorption of oxygen on the a-C:Ni film, as determined by X-ray Photoelectron Spectroscopy.     

Si(100)衬底上n-3C-SiC/p-Si异质结构研究

利用LPCVD方法在Si(100)衬底上获得了3C-SiC外延膜,扫描电子显微镜(SEM)研究表明3C-SiC/p-Si界面平整、光滑,无明显的坑洞形成。研究了以In和Al为接触电极的3C-SiC/p-Si异质结的I-V,C-V特性及I-V特性的温度依赖关系,比较了In电极的3C-SiC/p-Si异质结构和以SiGe作为缓冲层的3C-SiC/SiGe/p-Si异质结构的I-V特性,实验发现引入SiGe缓冲层后,器件的反向击穿电压由40V提高到70V以上。室温下Al电极3C-SiC/p-Si二极管的最大反向击穿电压接近100V,品质因子为1.95。     

Preparation of tantalum oxide thin films by photo-assisted atomic layer deposition

Tantalum oxide thin films were prepared by photo-assisted atomic layer deposition (Photo-ALD) in the substrate temperature range of 170–400 °C using Ta(OC₂H₅)₅ and H₂O as precursors. The constant growth rates of 0.42 and 0.47 Å per cycle were achieved for the films grown by normal ALD and Photo-ALD, respectively. The increased growth rate in Photo-ALD is probably due to the reactive surface by photon energy and faster surface reaction. In Photo-ALD, however, the constant growth rate started at lower temperature of 30 °C and one cycle time shortened up to 5.7 s than that of normal ALD. The films grown by normal ALD and Photo-ALD were amorphous and very smooth (0.21–0.35 nm) as examined by X-ray diffractometer and atomic force microscopy, respectively. Also, the refractive index was found to be 2.12–2.16 at the substrate temperature of 190–300 °C, similar to that of the film grown by normal ALD. However, the remarkably low leakage current density of 0.6×10⁻⁶ A/cm² to 1×10⁻⁶ A/cm² at applied field of 1 MV/cm is several order of magnitude smaller than that of normal ALD, probably due to the presence of reactive atom species.     

SrB4O7：Pr3+,Mn2+中的Pr→Mn能量传递

从能量传递的角度出发,利用同步辐射光源(德国HASYLAB实验室的SUPERLUMI实验站)对Pr³⁺和Mn²⁺掺杂的SrB₄O₇粉末样品进行了光谱研究.206nm激发下,在SrB₄O₇:Pr³⁺(0.1%,摩尔分数)样品中观察到了来自Pr³⁺离子1S0能级的光子级联发射.SrB₄O₇:Pr³⁺样品的发射谱与SrB₄O₇:Mn²⁺样品监测Mn²⁺离子640nm发射的激发谱在330~430nm的波长范围里存在显著的光谱重叠.这个光谱重叠有利于Pr³⁺→Mn²⁺的能量传递发生,从而将Pr³⁺离子级联发射中第一步不实用的紫外或近紫外光子转换为Mn²⁺的红光发射.双掺杂样品SrB₄O₇:Pr³⁺,Mn²⁺与单掺杂样品SrB₄O₇:Pr³⁺的发射谱比较揭示出Pr³⁺→Mn²⁺的能量传递的确存在,并且提供了一种传递效率的估算方法,表明通过“Pr³⁺-Mn²⁺”组合有可能获得量子效率大于1的高效真空紫外激发发光材料.     

CO2 adsorption and reaction on Fe(111): An angle resolved photoemission (ARUPS) study

Molecular CO₂ adsorption is observed on an Fe(111) surface at 85 K. For the main fraction of molecules the relative binding energies of the valence ion states as determined by ARUPS are consistent with those in the gas as well as in the condensed phase, and indicate that the electronic structure of that fraction of adsorbed molecules is only slightly distorted upon adsorption. There is a fraction of adsorbed molecules at 85 K that can be identified as bent, anionic CO₂⁻ species. While the weakly adsorbed, linear CO₂ molecules desorb at low temperature, the CO₂⁻ species is stable up to 160–180 K. The latter is proposed to be a precursor to dissociation. Above this temperature adsorbed carbon monoxide and oxygen are observed on the surface, and at room temperature the CO₂⁻ signals have disappeared. Heating above room temperature dissociates the CO molecules into carbon and oxygen.     

Poly(ethylene oxide-co-epichlorohydrin)/NaI: a promising polymer electrolyte for photoelectrochemical cells

We have investigated the thermal and ionic conductivity properties of the elastomer poly(ethylene oxide-co-epichlorohydrin) filled with NaI and I₂. The reason for using this composition is its potential application as electrolyte in photoelectrochemical cells. This copolymer was characterized as a function of NaI concentration, temperature and relative humidity. According to the data obtained, the Na⁺ ion interacts with the ethylene oxide repeating units by means of Lewis type acid–base interactions. The empirical Vogel–Tamman–Fulcher equation was used to model the conductivity and temperature relationships, indicating that the conduction occurs in the amorphous phase of the copolymer. The sample with 9.0% (w/w) of NaI presents a conductivity of 1.5×10⁻⁵ S cm⁻¹ in a dry atmosphere (30°C, [H₂O]<1 ppm) and 2.0×10⁻⁴ S cm⁻¹ at 86% relative humidity (22°C).     

Behavior of zirconium in the ZrOW(100) system at high temperature, studied by ISS, AES and work-function measurements

The behavior of zirconium atoms at the W(100) surface associated with oxygen adsorption at different sample temperatures has been studied by Auger electron spectroscopy (AES), ion scattering spectroscopy (ISS), and the relative change of the work function (Δф) measured by the onset of the secondary electron energy distribution. The results have revealed: (i) adsorption of zirconium onto the W(100) surface followed by the elevation of the sample temperature up to 1710 K in an oxygen partial pressure of 2.7 × 10⁻⁴ induces complete diffusion of zirconium atoms into the W(100) substrate; (ii) further exposure of oxygen induces co-existence of oxygen and tungsten on the surface at 1710 K, resulting in a work function of 4.37 eV; (iii) keeping the sample temperature at 1710 K, simple evacuation of the system has resulted in surface segregation of zirconium atoms to the surface to form a zirconium atomic layer on the top-most surface, reducing the work function to 2.7 eV. The results have revealed that this specific behavior of zirconium atoms at high temperature assures, with very good reproducibility, the highly stable performance and long service life of Zr---O/W(100)-emitters in practical use, even in a low vacuum of 10⁻⁶ Pa.     

Ag(111)和Au(111)上铋的初始生长行为

半金属铋(Bi)的表面合金具有的Rashba效应,和其具体结构性质有重要关联.本文结合扫描隧道显微镜(STM)和密度泛函理论(DFT),系统地研究了Bi原子在Ag(111)和Au(111)上的不同初始生长行为.在室温Ag(111)上,连续的Ag2Bi合金薄膜会优先在Ag台阶边缘形成;在570 K Ag(111)上,随着...     

XPS study of residual oxide layers on p-GaAs surfaces

The total thickness and composition of a residual oxide layer after chemical etching of p-GaAs:Zn + In has been studied by X-ray photoelectron spectroscopy (XPS). The variation of the Ga to As oxides ratio along the depth has been determined. A concentration correlation of doping isovalent impurity and the dislocation density with the composition of residual oxides is looked for. The total thickness of the residual oxide layer on p- and semi-insulating GaAs is about 5–6 Å. It is found that the Ga₂O₃ quantity in the oxide bulk is greater than the same value of As₂O₃ in highly In-doped samples. In-doping in concentrations over 1.5 × 10¹⁹ cm⁻³ increases the Ga₂O₃ content and the density of the residual oxide. This influence is determined by reducing the dislocation density and changing the point defect environment. The presence of As-rich precipitates on the dislocations and in the matrix decreases the sputtering time and changes the composition of the residual oxide. The correlation between the type of high temperature dislocations revealed by Abrahams-Buiocchi (AB) etching and the oxide layer composition is shown. The results obtained could be used in the first stages of epitaxial growth, metallization and other technological processes of semiconductor device and ICs fabrication.     

Lithium-7 NMR investigation of electrochemical reaction of lithium with SnO

We report on solid state ⁷Li NMR measurements of electrochemically lithiated SnO. At low Li contents (Li/SnO≤2), the results are consistent with the formation of amorphous Li₂O. For Li/SnO ratio of 4.3, in addition to the amorphous Li₂O phase, there are at least two distinct Sn/Li alloy environments which are similar to those observed in a reference Li_2.3Sn alloy. However the Li⁺ environments in a sample with Li/SnO ratio equal to 6.4 and an Li_4.4Sn reference alloy differ markedly. The NMR data are thus consistent with the simple model of Li insertion proposed by other groups, involving the formation of Li₂O and Li_xSn alloys (SnO+xLi→Li₂O+Li_x−2Sn), at low and intermediate Li contents. At high Li content, however, the Li_x−2Sn alloy structure is significantly different in the electrochemically lithiated SnO material, compared to that in the reference alloy.     

荧光粉CaWO4：Eu3+中WO42-与Eu3+间的能量转递

通过高温固相法分别制备了CaWO₄和CaWO₄:1%Eu³⁺ 样品. 测量了样品不同温度(10–300 K)的荧光光谱、荧光衰减曲线和 时间分辨荧光光谱. 样品的荧光光谱表明: 在240 nm紫外光激发下, 两个样品在430 nm处都展现出来源于WO₄^2-的蓝色发射; 样品CaWO₄:Eu³⁺的Eu³⁺(⁵D₀→⁷F_{1, 2, 3,4})的特征发射则归属于WO₄^2-到Eu³⁺ 间的能量传递.由样品室温(300K)荧光衰减曲线发现: 纯CaWO₄的荧光寿命为8.85μs,Eu³⁺掺杂之后WO₄^2-的荧光寿命缩短至6.27μs,这从另一方面证明了WO₄^2-与Eu³⁺间能量传递的存在. 由荧光寿命得到T=300K时, CaWO₄: 1%Eu³⁺中WO₄^2-与Eu³⁺间的能量传递效率(η_ET)为29.2%, 能量传递速率(ω_ET)为4.65×10⁴ s^-1.通过时间分辨荧光光谱, 获得了从WO₄^2-到Eu³⁺之间的能量传递的时间演变过程,当温度由10 K增加到300 K时, 能量传递出现的时间单调变小. 测试了不同温度(10–300 K)对CaWO₄:Eu³⁺的荧光寿命的影响, 发现在10–50K时,Eu³⁺的荧光寿命增加, 但温度超过50K时发生猝灭, 荧光寿命开始下降; WO₄^2-的荧光寿命则是随着温度的升高逐渐缩短. 关键词： 能量传递 红色荧光粉 温度依赖 4：Eu³⁺')" href="#">CaWO₄：Eu³⁺     

Thermal and complex impedance analysis of amorphous and crystalline lithium salt mixtures

Amorphous electrolytes consisting of the lithium salts, Li[R-NSO₂CF₃] were prepared and the attendant low ionic conductivities of the lithium salt mixtures (1×10⁻⁶ S cm⁻¹ at room temperature) are attributed to high glass transition temperatures. An example is the novel amorphous salt, Li[18-C-6NSO₂CF₃] which produces an amorphous salt mixture with Li[N(SO₂CF₃)₂] (LiTFSI).     

氢化非晶硅薄膜晶体管的低频噪声特性

针对氢化非晶硅薄膜晶体管(hydrogenated amorphous silicon thin film transistor,a-Si:H TFT)的低频噪声特性展开实验研究.由测量结果可知,a-Si:H TFT的低频噪声特性遵循1/f~γ(f为频率,γ≈0.92)的变化规律,主要受迁移率随机涨落效应的影响.基于与迁移率涨落相关的载流子数随机涨落模型(?N-?μ模型),在考虑源漏接触电阻、局域态俘获及释放载流子效应等情况时,对器件低频噪声特性随沟道电流的变化进行分析与拟合.基于a-Si:H TFT的亚阈区电流-电压特性提取器件表面能带弯曲量与栅源电压之间的关系,通过沟道电流噪声功率谱密度提取a-Si:H TFT有源层内局域态密度及其分布.实验结果表明:局域态在禁带内随能量呈e指数变化,两种缺陷态在导带底密度分别约为6.31×10~(18)和1.26×10~(18)cm~(-3)·eV~(-1),特征温度分别约为192和290 K,这符合非晶硅层内带尾态密度及其分布特征.最后提取器件的平均Hooge因子,为评价非晶硅材料及其稳定性提供参考.     

Radiation effects of electrons and protons on the ceramic oxide superconductor YBaCuO

The irradiation of the high T_c superconducting material YBaCuO has been carried out by using 200 keV proton, and 400 keV and 8 MeV electron beams. The temperature of zero resistance increases from 86.7 to 89.8 K with proton implantation while 8 MeV electron irradiation reduces the zero resistance temperature by 3 K with an irradiation dose of 2.25×10¹⁴e^-/cm². However, wich an irradiation dose of 1.35×10¹⁵e^-/cm² the 8 MeV electron beam can make the superconductor become insulating. The in situ examination of a high resolution transmission electron microscope has proved that the amorphous region in the system has ordered arrangement whereas the crystalline region turns disordered under 400 keV electron irradiation with very high doses up to 10²⁶ e^-/cm². The experiments demostrate that proton and electron irradiations exhibit quite different effects both in its structure and property.     

Ionic and electronic conductivity in lead–zirconate–titanate (PZT)

Accurate impedance measurements on differently sized samples of lead–zirconate–titanate (PbZr_0.53Ti_0.47O₃, PZT) have been analyzed with a CNLS procedure, resulting in the separation of the ionic and electronic conductivities over a temperature range from 150 to 630 °C. At 603 °C the electronic conductivity shows approximately a (P_O2)^1/4 dependence, while the ionic conductivity remains constant. Below the Curie transition temperature the oxygen non-stoichiometry becomes frozen-in and the conductivities are strongly dependent on the sample history with respect to temperature sequence and ambient P_O2. A tentative interpretation assumes defect association, i.e. formation of neutral [V_Pb–V_O^··]^× complexes, and electron-hole transfer between lead sites and lead vacancies to control the oxygen ion conductivity in the tetragonal phase.

Annealing PZT-based devices at about 600 °C under low oxygen pressure (1 Pa oxygen) effectively decreases the low temperature electronic conductivity by a factor of 100 and the ionic conductivity by a factor of 10–15 with respect to normal air processing.     

The interaction of C2Cl4 with fe(110)

Quantitative adsorption studies, temperature programmed desorption (TPD) and Auger spectroscopy have been used to study the interaction of C₂Cl₄ with Fe(110) at 90 and 325 K. At 90 K, multilayer C₂Cl₄ adsorption occurs. The following desorption products are observed in the temperature range of 90–1050 K: C₂Cl₄ from the multilayer and the monolayer, FeCl₂, and a high mass iron chloride species with mass spectrometer cracking products FeCl⁺₂, FeCl⁺, and Fe⁺. Irreversible dissociative C₂Cl₄ adsorption occurs at 325 K and the only desorption product which is observed is the high mass iron chloride species. Auger spectroscopy shows that surface carbon from C₂Cl₄ starts to diffuse into the bulk of the crystal at ˜ 480 K while small coverages of chlorine remain on the surface of the crystal even after heating to 1050 K. Comparison of the behavior of C₂Cl₄ and CCl₄ on Fe(110) indicates that radical products (·CCl₃ and :CCl₂) observed to be produced from CCl₄ adsorption are not produced from C₂Cl₄ adsorption. This difference is probably due to the enhanced surface reactivity of the C=C bond in C₂Cl₄. A special reactivity of iron defect sites for C₂Cl₄ is observed through the production of associated FeCl₂ species which desorb via zero-order kinetics with an activation energy of 44.8 ± 8.5 kcal/mol, the sublimation enthalpy of FeCl₂.     

Tb掺杂双层锰氧化物La_(4/3)Sr_(5/3)Mn_2O_7的磁熵变和电输运性质

研究了Tb掺杂对双层锰氧化物La_(4/3)Sr_(5/3)Mn_2O_7磁熵变和电输运性质的影响.样品采用传统固相反应法制备,两样品的名义组分可以表示为(La_(1-x)Tb_x)_(4/3)Sr_(5/3)Mn_2O_7(x=0,0.025),磁场为7 T时的最大磁熵变?S_M分别为-4.60 J/(kg·K)和-4.18 J/(kg·K).比较后发现,Tb元素的掺杂使得最大磁熵变值减小,但同时增大了相对制冷温区.电性测量结果表明,x=0.025的样品在高温区的导电机制可以用小极化子模型解释,与母体三维变程跳跃模型不同;当温度降低至三维长程铁磁有序温度(T_c~(3D))附近时,掺杂样品发生金属绝缘相变;掺杂后样品在T_c~(3D)附近,磁电阻取得极大值(约为56%),表明是本征磁电阻效应.     

EXAFS analysis of Er sites in Er–O and Er–F co-doped crystalline Si

We present extended X-ray absorption fine structure (EXAFS) and photoluminescence (PL) analyses of Er–O and Er–F co-doped Si. Samples were prepared by multiple implants at 77 K of Er and co-dopant (O or F) ions resulting in the formation of a2 μm thick amorphous layer uniformly doped with 1×10¹⁹ Er/cm³ and 3×10¹⁹ O/cm³, 1×10²⁰ O/cm³ or 1×10²⁰ F/cm³. EXAFS measurements show that the local environment of the Er sites in the amorphous layers consists of 6 Si first neighbors. After epitaxial regrowth at 620°C for 3 h, Er is fully coordinated with 8 F ions in the Er–F samples, while Si and O ions are concomitantly present in the first shell of O co-doped samples. Post regrowth thermal treatments at 900°C leave the coordination unchanged in the Er+F, while the Er+O (ratio 1 : 10) doped samples present Er sites with a fully O coordinated shell with an average of 5 O atoms and 4 O atoms after 30 s and 12 h, respectively. We have also found that the fine structure and intensity of the high-resolution PL spectra are strongly dependent on the Er-impurity ratio and on thermal process parameters in the Er–O co-doped samples, while this is not observed for the F-doped samples. The most intense PL response at 15 K was obtained for the 1 : 3 E : O ratio, suggesting that an incomplete O shell around Er is particularly suitable for optical excitation.     

Crystallization kinetics of the Fe40Ni38Mo4B18 amorphous alloy

X-ray diffraction (XRD) and Mössbauer spectroscopy were used to study the annealing of the Fe₄₀Ni₃₈Mo₄B₁₈ amorphous alloy. The samples were isothermally annealed in the 858–878 K temperature range several times. Two crystalline phases were observed in the annealed samples: FeNi₃ and (Fe, Ni, Mo)₂₃B₆. Preliminary results indicate that assuming a linear relationship between the area under the main XRD peak associated with the FeNi₃ phase and its volume fraction, this can be fitted to a Johnson–Mehl–Avrami equation with an exponent n close to 1.0. Mössbauer results show a broad magnetic hyperfine field distribution in as-received samples and, consistent with XRD results, a sextet attributed to precipitates of FeNi₃ (B_hf=29.5 T) for long annealing times.