Specular reflectivity of 13.5-nm light from Sn islands deposited on grazing incidence mirror surfaces

We have investigated the effect of exposure to thermal Sn atoms on the 13.5-nm specular reflectivity of single-layer Pd mirror surfaces. The mirror surfaces were characterized using low-energy ion scattering spectroscopy (LEISS) and the relative 13.5-nm specular reflectivity measured in situ during exposure to doses up to several 10¹⁶ cm^-2 Sn particles. The relative reflectivity loss at 13.5 nm is found to deviate from the theoretical Fresnel reflectivity. Losses are < 20% for fluence levels > 10¹⁶ cm^-2. The difference is due to deposited Sn nucleating at early stages of exposure and coalescing to nanoscale islands. Sn atomic surface fraction from LEISS reaches 50 a/o (atomic percent) at a fluence of 0.25×10¹⁶ cm^-2 and ultimately levels off at 93–95% for fluences greater than 2.0×10¹⁶ cm^-2. The specular reflectivity approaches the Fresnel theoretical value of 38.7% for thermal Sn deposition at large doses and equilibrates to 36.4%. The difference is mainly due to surface roughness of the deposited Sn film. PACS 61.18.Bn; 79.20.Rf; 78.70.Ck; 78.67.Bf     

Aperiodic multilayer mirrors for efficient broadband reflection in the extreme ultraviolet

Recent extreme ultraviolet sources using high-harmonic generation in a rare gas make new optics developments necessary. We report on the study and development of multilayer structures with efficient reflectivity in the 35–75 eV energy range. We have optimized, deposited and characterized two aperiodic broadband mirrors consisting of a Mo, Si and B₄C thin-film stack. We used the needle procedure in order to optimize mirror reflectivity. The magnetron sputter deposited multilayers have been calibrated and characterized using Cu K _α grazing incidence X-ray reflectometry. Reflectivity measured at near-normal incidence on a synchrotron radiation source reaches 12% with a full width at half maximum of nearly 40 eV. Experimental results are compared with theoretical simulation using available optical constants for Mo, Si and B₄C in this spectral range.     

CEMS and SEM studies of the ion-beam mixed Ni−Sn and Al−Sn systems

Metallic¹¹⁹Sn was vapour deposited on Al and Ni substrates to form layers about 40nm thick and subsequently irradiated with 100keV Xe⁺ at fluences 1, 5 and 10·10¹⁵ Xe⁺/cm². Irradiation with 100keV N⁺ at 5·10¹⁶N⁺/cm² fluence was also accomplished on an Al sample on which a layer of 100nm¹¹⁹Sn was previously electrodeposited. Surface evolution of the deposited layers due to irradiation has been observed by SEM and loss of Tin due to sputtering has been evidenced by EDX microanalysis. Changes of chemical structure at the irradiated surfaces have been followed by CEMS: β-Sn, SnO, SnAl₂O₄, SnO₂ and SnAl₂O₅ or β-Sn, dissolved Tin in Nickel, SnO₂, Ni₃Sn and Ni₃Sn₂ phases were recognized on the surface of Aluminium and Nickel substrates respectively.     

1.5-octave chirped mirror for pulse compression down to sub-3 fs

We demonstrate numerically and experimentally a chirped mirror with controlled reflectivity and dispersion of up to 1.5 octaves. A complementary pair of such mirrors has a reflectivity of 95% in the wavelength range 400–1200 nm with residual group delay dispersion ripples <100 fs² in all of this range. The mirror pair allows one to compensate a chirp of the corresponding spectrum (with a smooth phase), resulting in sub-3-fs pulses. PACS 42.65.Re; 42.79.Fm; 42.79.Wc     

A Mössbauer-effect investigation of some electrochemically inserted lithium thiospinels

Summary We present here a study carried out on In₁₆Sn₄S₃₂ and In₁₆Fe₈S₃₂ spinels. Electronic and local environment changes of Sn and Fe are discussed from recorded M?ssbauer parameters. In the case of the tin thiospinel, a reduction process from Sn^IV to Sn^II is obvious till an amount of 8 inserted Li. For the iron thiospinel a migration of iron atoms from the octahedral to the tetrahedral sites is observed. In the region of higher lithium amounts (10– Li), in both spinels a further environment appears indicating an increase of covalency. Paper presented at ICAME-95, Rimini, 10–16 September 1995.     

MeV Al+ and Al2+ ions implantation in Si(100): surface roughness and defects in the bulk

This paper deals with the implantation of high-energy (1.0–3.0 MeV) atomic and molecular Al⁺ ions in Si(100) to a fluence of 5×10¹⁴ Al atoms/cm² at room temperature. The molecular effect, i.e. the increase of the displacement yield compared with the sum of the atomic yields, and the damage formation as well as defect behaviour after annealing have been investigated. A detailed experimental study has been made of the evolution of extended secondary defects which form during thermal anneals of Al⁺ or Al₂ ⁺ irradiated silicon. The samples have been examined using combined Rutherford backscattering and channeling experiments together with transmission electron microscopy observations. The surface structure of the implanted wafers has been measured by atomic force microscopy. The results for the implantation-induced roughness at the Si surface, resulting from Al⁺ or Al₂ ⁺ irradiation at the same energy/atom, total atomic fluence, flux rate, and irradiation temperature, are presented and discussed. Received: 19 August 1999 / Accepted: 20 October 1999 / Published online: 23 February 2000     

Balmer Hβ vs. Dβ line intensity in the collisions of H+, H2 +, H3 +, D+, D2 +, and D3 + ions with “realistic” metal surface at energies below 1 keV

The intensities of hydrogen H_β and deuterium D_β spectral lines of the Balmer series were measured as a function of collision energy when H⁺, H₂ ⁺, H₃ ⁺, D⁺, D₂ ⁺, and D₃ ⁺ ions impinged on Al, Ti, Cu, Mo, W, and Pb targets. The collision energies were kept in the 100–1000 eV range. The target surface was contaminated with hydrocarbons from the vacuum pumping system and possibly also by oxygen molecules due to limited vacuum conditions. At projectile velocities above 200 km/s the luminescence of backscattered deuterium atoms is about 30–50% weaker than that of hydrogen atoms.     

Photoionization spectra of silver atoms adsorbed on the surface of a ZnS single crystal

We have used photostimulated flash luminescence to study deep electronic states arising when silver ions Ag⁺ are deposited under high vacuum onto the surface of a ZnS single crystal, followed by creation of the conditions for neutralization of the silver ions. The flux density of the silver ion beam was 10⁷ cm⁻²·sec⁻¹. We have observed the appearance of two types of deep electronic states with photoionization energies 1.60 eV and 1.80 eV, arising after depositing the silver ions onto the surface of the ZnS single crystal. We have hypothesized that there may be two different preferred sites for adsorption of silver atoms on the zinc sulfide surface. The corresponding photoionization spectra of the adsorbed silver atoms have maxima at 775 nm and 690 nm. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 3, pp. 335–338, May–June, 2006.     

Low temperature CEMS of Sn-implanted SiO2

Conversion electron Mössbauer spectroscopy (CEMS) at room and low temperature has been used to study thin SiO₂ films implanted with Sn atoms and annealed at 900°C. This work focuses on the determination of the Debye temperature (θ _D) and Debye–Waller factors (f) of the Sn oxidized phases formed in this system. The Sn²⁺ oxidation state is the predominant one, even if a small percentage of the Sn atoms is in the Sn⁴⁺ oxidation state. The real Sn-oxides fractions are calculated by normalizing the resonant areas to the f values, as calculated from the temperature dependence of the related resonant areas within a Debye model. The Sn⁴⁺ oxidation state, possibly related to Sn atoms close to the SiO₂ surface, represents less than 20% of the Sn atoms. For the Sn²⁺ oxidation state, two different electronics configurations a and b, having different Debye temperature and hyperfine parameters are identified. The component a, with a lower θ _D (137 K), is the predominant one and might be related to small (2–3 nm) amorphous SnO _x clusters in the SiO₂ matrix. The component b could be related to substitutional Sn atoms in the SiO₂ network forming a local Sn environment similar to the SnO amorphous compound.     

Fresnel diffraction mirror for an atomic wave

We have experimentally demonstrated a material-independent mirror for atomic waves that uses the Fresnel diffraction at an array of parallel ridges. He* (2 (3)S(1)) and Ne* (1s(3)) atomic waves were reflected coherently on a silicon plate with a microfabricated grating structure, consisting of narrow wall-like ridges. We measured the reflectivity at grazing incidence as a function of the incident velocity and angle. Our data show that the reflectivity on this type of mirror depends only on the distance between the ridges, the wavelength, and the incident angle, but is insensitive to the material of the grating structure. The reflectivity is observed to increase by 2 orders of magnitude, compared to that of a flat polished silicon surface, where the reflection is caused by the attractive surface potential. For He* atoms, the measured reflectivity exceeds 10% for normal incident velocities below about 25 cm/s.     

Mo/Si多层膜在质子辐照下反射率的变化

为了检验应用在极紫外波段空间太阳望远镜上Mo/Si多层膜反射镜在空间辐射环境下反射率的变化情况, 模拟了部分空间太阳望远镜运行轨道的辐射环境, 利用不同能量和剂量的质子对Mo/Si多层膜反射镜进行辐照实验.辐照前后反射率测量结果显示,由于带电粒子的辐照损伤,质子辐照会使Mo/Si多层膜反射镜的反射率降低,且质子能量越低、剂量越大,对多层膜的反射率影响越明显. 当质子能量E=160keV,剂量＝6×10¹¹/mm²时,反射率降低4.1%;能量E=100keV,剂量=6×10¹¹/mm²时, 反射率降低5.7%;能量E=50keV,剂量=8×10¹²/mm²时,反射率降低10.4%. 用原子力显微镜测量辐照后Mo/Si多层膜反射镜的表面粗糙度比辐照前明显增加,致使散射光线能量逐渐增大并最终导致反射率的降低. 关键词： 质子辐照 Mo/Si多层膜反射镜 辐照损伤     

Energy and charge distributions of fast hydrogen ions and atoms reflected from Cu in the case of grazing incidence

The energy and charge distributions of protons and hydrogen atoms reflected from the Cu surface in the case of grazing incidence angles are measured at energies of incident particles (H⁺ and H⁰) of 200 and 250 keV. The charged fractions of reflected particles are analyzed. A weak dependence of the neutral fraction of reflected particles on the scattering angle is discovered for incidence angles of 1°–2° and an energy of scattered particles of 60 keV or less. It is shown that the neutral fraction of reflected particles with an energy of 60–80 keV or more is independent of the scattering angle and is determined by the ratio of the cross sections for the electron capture and loss by ions in the material.     

Characterization and antibacterial functions of Ag–TiO<Subscript>2</Subscript> and W–TiO<Subscript>2</Subscript> nanostructured thin films prepared by sol-gel/laser-induced technique

A novel sol-gel/laser-induced technique (SGLIT) has been developed to form nanocrystalline titanium dioxide (TiO₂) based thin films with an improved antibacterial performance. TiO₂ precursor films loaded with W⁺⁶ and Ag⁺² ions (W–TiO₂, Ag–TiO₂) were prepared separately by sol-gel method and spin-coated on microscopic glass slides. As-dried films were subjected to KrF excimer laser pulses at optimized parameters to generate mesoporous anatase and rutile phases at room temperature. The anatase phase was obtained after irradiation with 10 laser pulses only at 75–85 mJ/cm² fluence in W–TiO₂ films. However, higher number of laser pulses and higher W⁺⁶ content favored the formation of rutile. Whereas Ag–TiO₂ films exhibited anatase up to 200 laser pulses at the same fluence. The films were characterized by using XRD, FEG-SEM, TEM and UV-Vis spectrophotometer to investigate the crystallographic structure, phase transformation, surface morphology, film thickness and the optical properties. A crystallite size of approximately 20 nm was achieved from the anatase prepared by SGLIT. The films exhibited an enhanced antibacterial function against E-Coli cells under the UV excitation.     

Incorporation of Sn into epitaxial GaAs grown from the liquid phase

The incorporation of Sn into LPE GaAs was studied as a function of the atomic fractionx _Sn ^l of Sn in the liquid (1.6×10⁻⁴≤x _Sn ^l ≤0.54), the growth temperatureT _K and the cooling rate α. The diffusion coefficient of As in Ga for moderate Sn-doping was deduced from the growth velocities to beD _As (760° C)=(3.3±1.0)×10⁻⁵ cm²/s. The epitaxial layers were analyzed after van der Pauw with special emphasis on the sources of experimental error. With the aid of current mobility theories the concentrations of the ionized donors and acceptors were derived. From their dependence onx _Sn ^l , on α and onT _K combined with the Schottky-barrier model of Sn incorporation it can be concluded that the melt and the growing crystal surface were in thermal equilibrium. The diffusion coefficient of Sn in GaAs is about 8×10⁻¹⁴ cm²/s at 760° C. The distribution coefficient for Sn increases from 4.4×10⁻⁵ to 12.3×10⁻⁵ in the temperature range from 690 to 800° C. The total Sn incorporationx _Sn ^s was measured using the atomic absorption spectroscopy for the first time down tox _Sn ^s =10¹⁷/cm³. From these data it can be concluded that up tox _Sn ^l =0.54 the dopant Sn is incorporated as donor and as acceptor only and that within the experimental scatter there is no indication of incorporation as a neutral species.     

Experimental study on reflection of high-intensity nanosecond Nd:YAG laser pulses in ablation of metals

The total reflectivity of tin and magnesium in ablation by nanosecond Nd:YAG laser pulses in air is studied. It was found that the high initial reflectivity of the studied metals undergoes a significant drop to values of 0.11 for Sn and 0.16 for Mg within a laser fluence range between about 0.8 and 11 J/cm². These reduced reflectivity values remain virtually unchanged with further increasing laser fluence. This study shows that a significant reflectivity decrease of the studied metals is caused by plasma formation in front of the irradiated surface. Below the plasma formation threshold, the reflectivity of the studied metals is observed to be virtually independent of laser fluence, indicating a small role of Drude׳s temperature effect on the reflectivity of the studied samples.     

Wave mixing in nominally undoped Sn<Subscript>2</Subscript>P<Subscript>2</Subscript>S<Subscript>6</Subscript> at high light intensities

The intensity dependence of the photorefractive response of Sn₂P₂S₆ is studied for the Kr⁺-laser wavelength of 647 nm and pump-beam intensities of up to 10 W/cm². A considerable enhancement of the two-beam coupling gain factor with increasing intensity at a grating spacing of ≃1 μm is attributed to a light-induced increase of the effective trap density. The large gain reached at high intensities is applied for the build up of a double phase conjugate mirror with a sub-millisecond switch-on time.     

Generation of CdS clusters using laser ablation: the role of wavelength and fluence

The formation of cationic clusters in the laser ablation of CdS targets has been investigated as a function of wavelength and fluence by mass spectrometric analysis of the plume. Ablation was carried out at the laser wavelengths of 1064, 532, 355, and 266 nm in order to scan the interaction regimes below and above the energy band gap of the material. In all cases, the mass spectra showed stoichiometric Cd _n S _n ⁺ and nonstoichiometric Cd _n S _n−1⁺, Cd _n S _n+1⁺, and Cd _n S _n+2⁺ clusters up to 4900 amu. Cluster size distributions were well represented by a log-normal function, although larger relative abundance for clusters with n=13, 16, 19, 34 was observed (magic numbers). The laser threshold fluence for cluster observation was strongly dependent on wavelength, ranging from around 16 mJ/cm² at 266 nm to more than 300 mJ/cm² at 532 and 1064 nm. According to the behavior of the detected species as a function of fluence, two distinct families were identified: the “light” family containing S₂⁺ and Cd⁺ and the “heavy” clusterized family grouping Cd₂⁺ and Cd _n S _m ⁺. In terms of fluence, it has been determined that the best ratio for clusterization is achieved close to the threshold of appearance of clusters at all wavelengths. At 1064, 532, and 355 nm, the production of “heavy” cations as a function of fluence showed a maximum, indicating the participation of competitive effects, whereas saturation is observed at 266 nm. In terms of relative production, the contribution of the “heavy” family to the total cation signal was significantly lower for 266 nm than for the longer wavelengths. Irradiation at 355 nm in the fluence region of 200 mJ/cm² has been identified as the optimum for the generation of large clusters in CdS.     

Mössbauer study of the modification of iron during bombardment with deuterium at low temperature

Mossbauer spectra of a vacuum deposited 95 nm thick⁵⁷Fe film sandwiched between 35 nm copper layers on a beryllium substrate were measured during and after implantation with 60 keV D₃ ⁺ ions to a fluence of 1.2×10¹⁸ D⁺/cm². The modifications of the spectra indicate that at the target temperature of 100 K deuterium is mainly trapped at defects in the α-iron lattice or reemitted. Hydride formation is observed only weakly when the fluence exceeds 10¹⁸ D⁺/cm². After annealing at room temperature, a complete recovery of the ordinary α-iron spectrum is observed.     

Gol’danskii–Karyagin effect and induced fieldsin rare earth-transition metal stannides

The asymmetric doublet obtained in earlier ¹¹⁹Sn Mssbauer measurements of ternary stannides is re-interpreted as being due to the Gol’danskii–Karyagin effect instead of a β-Sn impurity included in the structure. Measurements in applied magnetic fields show that the conduction electron polarization at the Sn(2) site of ErRh_1.1Sn_3.6 is of the opposite sign to that of PrRh _x Sn _y and PrCo _x Sn _y .     

Influence of low-intensive beta-irradiation on phase transformations in silicon at microindentation

Raman spectroscopy is used to investigate the morphology of silicon phase composition in the indenter imprint with spatial resolution of ~200 nm. Suppression of the efficiency of Si-XII, Si-III, and a-Si phase formation induced by beta-particle irradiation from a ⁹⁰Sr + ⁹⁰Y source (fluence F = 3.6⋅10¹⁰ cm^–2) is revealed.