Laser performance of <Emphasis Type="Italic">N</Emphasis><Subscript><Emphasis Type="Bold">g</Emphasis></Subscript>-cut flash-lamp pumped Nd:KGW at high repetition rates

A comparative study of the flash-lamp pumped laser performance of standard b-grown Nd:KGW and Nd:KGW grown for propagation along the optical axis N_g is presented. The results show that, in comparison with b-grown crystal, the N_g-grown Nd:KGW is very promising for use at high repetition flash-lamp pumping rates. With the same laser cavity configuration, the N_g-grown Nd:KGW can operate at an average flash-lamp input power of at least 1.4 kW, while the b-cut one ceases lasing at average flash-lamp input power of ∼0.5 kW. The reason for this is that the thermal lens induced in the N_g-oriented Nd:KGW rod under pump radiation is relatively weak, nearly spherical and positive, whereas the b-grown Nd:KGW rod acts as a quite weak positive lens for radiation with radial polarization, and as a much stronger negative lens for tangentially polarized radiation. PACS 42.60.Jf; 42.70.Hj     

Thermal lensing study and athermal directions in flashlamp-pumped Nd:KGd(WO<Subscript>4</Subscript>)<Subscript>2</Subscript> laser crystal

Thermal lensing has been studied by a probe beam technique in flashlamp-pumped Nd:KGdW laser rods with rod axes positioned in the N _p–N _g plane and making different angles with the N _g optical indicatrix axis. It was found that the orientation of principal meridional planes of the astigmatic thermal lens in Nd:KGdW corresponds to the directions with maximum and minimum values of thermal-expansion coefficient in the plane perpendicular to the rod axis. The athermal Nd:KGdW laser crystal orientation defined as orientation with weak positive near spherical thermal lens has been determined to make an angle of 30^○–40^○ with the N _g axis for light polarization E∥N _m.     

Dual-wavelength diode-pumped laser operation of N p-cut and N g-cut Tm:KLu(WO4)2 crystals

Simultaneous continuous-wave laser oscillation at two wavelengths has been observed and studied in a diode-pumped monoclinic N _p-cut Tm:KLu(WO₄)₂ for different transmission of the output coupler. The maximum output power reached 1.15 W with a slope efficiency of 20.4 % with respect to the absorbed power for polarization parallel to the N _m optical axis. In an analogous N _g-cut crystal, the dual-wavelength laser operation is accompanied by polarization switching with increasing pump power and the switching point depends on the output coupling. The thresholds are slightly higher, and the slope efficiency reached a maximum of 25.5 % for polarization parallel to N _m at low pump levels, but at high pump levels, the oscillating polarization is parallel to N _p, reaching maximum output power of 3.09 W. Simple modelling with rate equations taking into account reabsorption losses explains qualitatively the complex behavior observed in the continuous-wave laser experiments with this anisotropic biaxial laser crystal.     

Comparison of cw laser performance of Nd:KGW, Nd:YAG, Nd:BEL, and Nd:YVO4 under laser diode pumping

4 crystals under low-power laser diode end-pumping. Output power dependencies on the pump power and the pump wavelength of these diode-pumped solid state lasers were investigated. The high Nd³⁺ concentration of the Nd:KGW samples used in our measurements as well as up-conversion and exited-state absorption processes in Nd:KGW cause the reduced laser output power dependence on the pump wavelength which was experimentally observed. At pump levels up to 270 mW a slope efficiency of η_sl≈46% was reached for the Nd:KGW laser. Nd:KGW microchip laser operation with a slope efficiency of η_sl≈50% was demonstrated. Thermal lensing in Nd:KGW at pump powers up to 3 W was measured. Received: 4 August 1997     

Comparative thermal analysis of Nd- and Yb-doped YAG and KGdW laser crystals under diode- and flashlamp-pumping

Temperature distribution in the Nd- and Yb- doped YAG and KGdW laser crystals under flashlamp- and diode-pumping was characterized by means of finite element analysis. For KGdW, two laser crystal orientations were considered for light propagation along the N_p and N_g optical indicatrix axes, taking into account the anisotropy of thermal conductivity coefficient. The influence of the cooling conditions, pump spot size and dopant concentration on the temperature distribution was analyzed. For flashlamp-pumping conditions, the applicability of the quasi-steady-state model is discussed. The main concerns in the thermal management of KGdW laser host is the relatively low thermal conductivity that results in poor cooling and significant absorption coefficients under diode pumping that result in highly non-uniform volumetric heat deposition. “Athermal” N_g-cut KGdW crystal was found to produce higher temperature gradients that the “standard” N_p-cut one, that should results in higher internal stresses and higher probability of thermally-induced cracks.     

单斜结构的Yb:KLu(WO4)2晶体光谱和激光性质的各向异性

研究了Yb:KLu(WO₄)₂晶体对非偏振抽运光的吸收以及连续波激光振荡性质. 晶体结构的低对称性导致晶体光谱呈强烈各向异性,最强的吸收和发射都发生在平行于N_m主轴的偏振方向上. N_g切向晶体具有最高的非偏振抽运光吸收效率和最大的激光功率产生潜力,2 mm长的晶体产生的最高连续波输出功率为11 W,相对于吸收抽运功率,光—光转换效率为68%,而斜率效率则达80%. 关键词： 吸收谱 发射谱 激光振荡 各向异性     

Laser performance and thermal lensing in high-power diode-pumped Yb:KGW with athermal orientation

A comparative, experimental study of the high-power diode-pumped laser performance and thermal lensing properties between standard b-cut Yb:KGW and Yb:KGW cut along an athermal direction is presented. The results show that thermal lens properties in both the b-cut and the athermal direction-cut crystals are determined by anisotropic thermal expansion in Yb:KGW. Thermal gradients due to the pump beam cause thermal lensing even in the athermal direction-cut geometry. The thermal lens is much weaker and less astigmatic in the athermal direction-cut crystal, for the same absorbed power. These properties allow generation of better-quality laser beams with the athermal direction-cut crystal as compared to the b-cut crystal. PACS 42.55.Xi; 42.60.Jf; 42.70.Hj     

Continuous-wave intracavity Raman laser at 1179.5 nm with SrWO<Subscript>4</Subscript> Raman crystal in diode-end-pumped Nd:YVO<Subscript>4</Subscript> laser

We report a continuous-wave intracavity Raman laser at 1179.5 nm with a SrWO₄ Raman crystal in a diode-end-pumped Nd:YVO₄ laser. The highest output power of 2.23 W is obtained at the laser diode power of 21.2 W corresponding to the slope efficiency of 17.3% and a diode-to-stokes optical conversion efficiency of 10.5%. The dependence of the Raman laser performance on the pump polarization is also studied. The measured Raman thresholds are about 9.3 and 8.3 W in the diode pump laser power for the a- and b-polarized configurations, respectively. The Raman gain coefficients of the c-cut SrWO₄ crystal for a- and b-polarized pumps are estimated to be about 4.9 and 4.7 cm/GW, respectively.     

Diode end pumped Nd:YAG laser at 946 nm with high pulse energy limited by thermal lensing

Diode lasers with peak powers in the kW range and pulse durations of micro- to milli-seconds have been available since several years. Pumping solid state lasers with such sources yield high output pulse energies in spiking or Q-switched operation. The output energy is limited by the thermal lens effects, which are measured and calculated. The time dependent heat conduction equation in the laser crystal is solved numerically to predict the overall temperature rise and thermal lensing. The thermally induced optical path difference is approximated by a quadratic distribution to obtain the focal length f of the thermal lens. The thermal lens coefficient K=1/(f⋅P _av), which depends only weakly on the heat transfer coefficient H of the laser crystal to the heat sink, decreases exponentially with increasing pump frequency until the steady state is reached. Experiments were done with a Nd:YAG crystal at different pump frequencies up to 100 Hz. The thermal lens coefficients obtained by the power maxima of asymmetric flat-flat resonators agree with our calculations.     

Pulse width compression and enhancement of peak power in a diode-pumped doubly Q-switched Nd:GdVO<Subscript>4</Subscript> 1.34 μm laser with AO and V<Superscript>3+</Superscript>:YAG saturable absorber

By using both acousto-optic (AO) modulator and V³⁺:YAG saturable absorber, a diode-pumped doubly Q-switched a-cut Nd:GdVO₄ laser at 1.34 μm is realized. The average output power and the pulse width for different AO repetition rate f have been measured. The experimental results show that the doubly Q-switched laser can compress the pulse width and improve the pulsed peak power in comparison to the singly Q-switched laser with AO or V³⁺:YAG saturable absorber. At the pump power 10.34 W and f = 10 kHz, the greatest pulse width compression ratio 72% and the highest peak power improvement 8.8 times have been obtained, respectively.     

A novel orthogonally linearly polarized Nd:YVO4 laser

We presented a novel orthogonally linearly polarized Nd:YVO₄ laser. Two pieces of a-cut grown-together composite YVO₄/Nd:YVO₄ crystals were placed in the resonant cavity with the c-axis of the two crystals orthogonally. The polarization and power performance of the orthogonally polarized laser were investigated. A 26.2-W orthogonally linearly polarized laser was obtained. The power ratio between the two orthogonally polarized lasers was varied with the pump power caused by the polarized mode coupling. The longitudinal modes competition and the corresponding variable optical beats were also observed from the orthogonally polarized laser. We also adjusted the crystals with their c-axis parallele to each other, and a 40.7-W linearly polarized TEM₀₀ laser was obtained, and the beam quality factors were M²_x=1.37 and M²_y=1.25.     

LD端面抽运Nd∶KGW 激光器热效应的理论与实验研究

对LD端面泵浦Nd∶KGW激光器的热效应进行了分析.求解热传导方程得出了Nd∶KGW晶体的温度分布和端面形变,进而计算出了热焦距随泵浦功率的变化曲线,并通过实验对其正确性进行了验证.采用凹 平腔,在不同透过率的输出镜下,对Nd∶KGW晶体的1 064 nm连续激光输出特性进行了研究.     

Intracavity Raman laser generating a third stokes component at 1.5 μm

The lasing properties of an intracavity Nd:KGW Raman laser which converts the multimode radiation of an Nd:KGW laser operating on the ⁴ F _3/2–⁴ I _11/2 transition into the third Stokes component at a wavelength of 1.5 μm are studied. The energy in the third Stokes component is found to increase essentially linearly with the electrical energy delivered to the flashlamp. Lasing at the third Stokes component begins in the central portion of the Nd:KGW crystal and then propagates to its boundaries. Reducing the geometric aperture of the multimode pump beam in the Raman crystal lowers the divergence of the Stokes emission. For a source pump energy of 6 J, the intracavity Raman laser emits 14.7 mJ pulses of duration 3–4 nsec which are safe to the eyes. The divergence of the Raman laser beam at a level of 86% of the total energy is ≈ 9 mrad.     

Passively Q-switched mode-locking in a diode-pumped Nd:LuVO<Subscript>4</Subscript> laser with V:YAG

A passively Q-switched and mode-locked Nd:LuVO₄ laser with V:YAG at 1.34 μm was successfully demonstrated. Comparisons between c-cut and a-cut Nd:LuVO₄ lasers were experimentally made. The maximum average output power of 170 mW, the highest Q-switched pulse energy of 4.5 μJ were obtained in c-cut Nd:LuVO₄ laser. The duration of mode-locked pulse was estimated to be less than 540 ps with repetition rate of 110 MHz.     

Passively Q-switched <Emphasis Type="Italic">a</Emphasis>-cut Nd:YVO<Subscript>4</Subscript> self-Raman laser

A passively Q-switched a-cut Nd:YVO₄ self-stimulating Raman laser using a Cr:YAG saturable absorber has been demonstrated for the first time. The maximum average output power of the self-Raman laser at 1176 nm is 347 mW at the incident pump power of 10 W with a pulse repetition frequency (PRF) of 66 kHz. The pulse width, pulse energy of the 1176 nm are found to be 10 ns and 5.6 μJ. The conversion efficiency from diode laser input power to Raman output power is 3.47%.     

The first-stokes pulse generation in Nd:KGW intracavity driven by a diode-pumped passively Q-switched Nd:YAG/Cr<Superscript>4+</Superscript>:YAG laser

The operation of an all solid-state pulsed Nd:KGW Raman laser pumped by compact passively Q-switched Nd:YAG/Cr:YAG laser is demonstrated. The first-Stokes radiation of stimulated Nd:KGW Raman scattering at the 1178 nm is generated. The average output power of 336 mW at Stokes wavelength was obtained under the laser diode pump power of 5.74 W. The corresponding optical efficiency from the diode light to the Raman output is 9.85%. The pulse width of 1.65 ns and a pulse repetition rate of 10 kHz were also obtained.     

LD端面抽运c切Nd:YVO4自拉曼倍频589 nm黄光激光研究

报道了LD端面抽运c切Nd:YVO₄自拉曼倍频黄光激光器的研究. 采用10 mm长,二类临界相位匹配角 (θ=69°,ø=0°)切割的KTP晶体作为倍频晶体. 考虑到c切Nd:YVO₄跃迁截面较小,所以通过对谐振腔及晶体膜系的严格设计,减少腔内插入损耗和衍射损耗. 最终在脉冲重复率为10 kHz,抽运功率为11.2 W下,获得了最高570 mW的倍频黄光激光输出,对应抽运光到倍频黄光的转化效率约为 关键词： 拉曼激光 c切Nd:YVO₄')" href="#">c切Nd:YVO₄ 589 nm 黄光激光     

High-efficiency flashlamp-pumped Nd:KGW laser

The laser performance of a Nd:KGW rod has been studied in a single flashlamp cavity in the free running as well as in the Q-switched mode of operation at input energies ranging from 1–25J. The results of Nd:KGW have been compared with Nd:YAG operated under identical experimental conditions. The laser extraction efficiency of the Nd:KGW rod was observed to be 2.5 times higher at a much lower threshold than that of the Nd:YAG rod. The intrinsic slope efficiency was determined to be 2.25% and 8.840% for Nd:YAG and Nd:KGW rods, respectively.     

High average power and short pulse duration continuous wave mode-locked Nd:GdVO<Subscript>4</Subscript> laser with a semiconductor absorber mirror

Passive mode locking of a solid-state Nd:GdVO₄ laser is demonstrated. The laser is mode locked by use of a semiconductor absorber mirror (SAM). A low Nd³⁺ doped Nd:GdVO₄ crystal is used to mitigate the thermal lens effect of the laser crystal at a high pump power. The maximum average output power is up to 6.5 W, and the pulse duration is as short as 6.2 ps. The optic-to-optic conversion efficiency is 32.5% and the repetition rate is about 110 MHz.     

Pulsed laser deposition of ZnO in N2O atmosphere

The contribution deals with ZnO thin layers doped by nitrogen which were prepared by pulsed laser deposition in N₂O ambient atmosphere. Our approach is based on ablation of undoped ZnO target in active atmosphere containing N₂O gas without any supporting excitation equipment in parallel. Ablation of ZnO target was performed at different pressures (1–32 Pa) of N₂O ambient atmosphere by pulsed Nd:YAG laser (at 355 nm). Layers of ZnO were grown on different substrates (Si, sapphire, fused silica) and their properties were investigated by various analytical methods: scanning electron microscopy (SEM), secondary ion mass spectroscopy (SIMS), X-ray diffraction (XRD), and optical transmission spectroscopy. The results confirmed incorporation of nitrogen into ZnO layers and its concentration was pressure dependent. According to SIMS analysis, there is a certain pressure level (above 10 Pa) when the presence of N becomes negligible. Transmittance spectra showed increasing of the optical band gap (E _g) according to the pressure of N₂O.