Terahertz P-I-N Modulator

Theoretical and experimental research of silicon surface oriented integrated p-i-n-structures as quasi-optical modulators of terahertz frequency range have been done. The problem of double injection into i-region has been numerically solved. A possible role of nonlinearity in boundary conditions at injecting junctions is pointed out. Our simulations demonstrate that an effective modulation of terahertz wave beams by Si p-i-n-structures can be achieved up till the frequencies 2-2.5 THz. Measurements at 400 GHz confirm the results of simulations. The possibility of modulation of picosecond monopulses is also investigated. The investigation of modulator includes the analysis of the nonlinear losses, which are very important in sub millimeter waves. The field value of the nonlinear effects domination is obtained.     

A Silicon Plasma-Based Wideband Modulator

Theoretical and experimental analysis has been performed for surface oriented silicon plasma-based p,i,n structures used to control high power level, broadband devices. It is shown that these structures are very promising for their use as modulators in the millimeter and submillimeter wave range.     

Generation of Optical Millimeter Wave Using Two Cascaded Polarization Modulators Based on Frequency Octupling Without Filtering

Abstract

An approach to generate an optical millimeter wave is introduced with frequency octupling using two cascaded polarization modulators followed by polarizers, respectively. By adjusting the modulation indexes of polarization modulators, only the ±4th-order sidebands are generated with a pure spectrum. Since no filter is needed, the proposed technique can be used to generate a frequency-tunable millimeter wave with a large frequency-tunable range. To prove the feasibility of the proposed approach, a simulation is conducted to generate an 80-GHz millimeter wave, and then its transmission performance is checked.     

Photonic generation of high quality frequency-tunable millimeter wave and terahertz wave

A scheme for the photonic generation of frequency-tunable millimeter wave and terahertz wave signals based on a highly flat optical frequency comb is proposed and demonstrated experimentally.The frequency comb is generated using two cascaded phase modulators(PMs)and an electro-absorption modulator(EAM).The frequency comb covers a 440-GHz frequency range,with 40-GHz comb spacing and less than 2-dB amplitude variation.By filtering out two of the comb lines with 50 dB out of the band suppression ratio,high frequency-purity and low phase noise millimeter wave or terahertz wave signals are successfully generated,with frequencies ranging from 40 to 440 GHz.     

Microwave generation analysis with higher order dispersion parameters in two cascaded Mach-Zehnder modulators

Dispersion is one of the major limiting factors for microwave/millimeter wave generation in microwave photonics. In this paper, we analyze the individual and combined effect of second order-, third order-, fourth order and fifth order dispersion parameter on microwave/millimeter wave generation. We have used the two cascaded Mach-Zehnder modulators in our proposed model, which have been not discussed earlier. Intensity at the output of photodetector versus modulation depth (β) with effects of dispersion parameters have been discussed and it has been found that output intensity of photodetector reduces when dispersion term up to fifth order are added.     

A novel MI-insensitive and filterless frequency octupling scheme based on two parallel dual-parallel Mach–Zehnder modulators

A novel MI-insensitive and filterless frequency octupling scheme based on two parallel dual-parallel Mach–Zehnder modulators (DP-MZMs) is proposed. The proposed scheme is not sensitive to modulation index and relatively strong MMW signal with good radio frequency spurious suppression ratio (RFSSR) can be obtained without strict requirement on modulation index. Filterless feature makes the scheme quite suitable for wavelength division multiplexing (WDM) applications. For verification, a 60 GHz millimeter wave with 44 dB RFSSR is generated from a 7.5 GHz radio frequency wave by simulation. Performance of the proposed scheme has been characterized under different conditions including DC-bias drifts of MZMs, different amplitudes of RF inputs and different extinction ratios of MZMs.     

Potentialities of photothermal displacement experiments in micro-scaled systems

The phase data of the photothermal signals measured at the surface of two-layer systems are interpreted in the framework of 3-D thermal wave propagation, taking into account the finite size of the heating spot and detection spot. In the first approach, concentric heating and detection spots are considered. In this configuration, information on the thermophysical properties of the surface layer is obtained in the range of intermediate and high modulation frequencies of heating. Additionally information on the thermal diffusivity of the subsurface material can be obtained in the limit of low modulation frequencies. Applying pump–probe offsets and controlled displacements between the excitation spot and detection spot provides the possibility of localizing heat sources. On the basis of numerical simulations using displacement distances from the millimeter to the micrometer range, the scaling of the thermal localization of hot spots from macroscopic to microscopic is studied with respect to experimental parameters, such as the heating and detection spot size, and the optimal range of the heating modulation frequencies.     

应用于ROF系统中的单边带调制微波毫米波生成技术研究

介绍了单边带调制微波毫米波生成技术研究的背景及意义,综述了几种主要的单边带调制微波毫米波生成技术方案,包括移相法、滤波法、非线性效应法,以及在此基础上的改进方法,如应用于ROF系统中基于谐波抑制的新型单边带调制方案、应用超窄双传输峰光纤光栅实现光学单边带调制等。还介绍了两种新型单边带调制生成微波毫米波技术,包括基于极性反转电光调制器的单边带调制技术以及新型光学注入锁定单边带调制实验系统     

基于相位调制器产生六倍频光毫米波的OFDM信号光传输系统研究

提出了两个并行相位调制器产生六倍频光毫米波并传输正交频分复用信号的全双工光纤无线通信系统.将2.5 Gbt/s的正交频分复用信号调制到60 GHz光毫米波上.从理论上分析了毫米波产生的原理,并分别模拟了毫米波信号承载OOK信号和正交频分复用信号在光纤中的传输性能.从而验证系统的可行性.仿真模拟结果表明,在光纤无线通信系统中,正交频分复用比非归零码更具有优势.     

Dynamic modulation in graphene-integrated silicon photonic crystal nanocavity

Silicon-based electro-optic modulators are the key devices in integrated optoelectronics. Integration of the graphene layer and the photonic crystal(PC) cavity is a promising way of achieving compact modulators with high efficiency. In this paper, a high-quality(Q) acceptor-type PC nanocavity is employed to integrate with a single-layer graphene for realizing strong modulation. Through tuning the chemical potential of graphene, a large wavelength shift of 2.62 nm and a Q factor modulation of larger than 5 are achieved. A modulation depth(12.8 dB) of the reflection spectrum is also obtained.Moreover, the optimized PC nanocavity has a large free spectral range of 131.59 nm, which can effectively enhance the flexibility of the modulator. It shows that the proposed graphene-based PC nanocavity is a potential candidate for compact,high-contrast, and low-power absorptive modulators in integrated silicon chips.     

光子晶体线缺陷波导中的折射率相位移调制增强效应

在传统的基于全内反射原理的低折射率比介质波导所构建的相位移调制型光学器件中,调制区域的长度通常在毫米到厘米量级.由于器件横向尺寸保持在微米量级,因此狭长结构成为了传统光波导器件的典型特征,这限制了光学器件集成度的提高,严重制约了集成光路的进一步发展.光子晶体的出现为高密集成光路的发展提供了一条新的途径.本文使用平面波展开方法计算了光子晶体线缺陷波导中的色散曲线.研究发现:在色散曲线下边缘处,材料折射率的一个微小变化可以引起传输常数的较大变化,如果工作频率点选择在带下边缘附近,则可以大幅度减小相位移调制型器件调制区域的长度.本文使用时域有限差分方法进一步验证这种增强效应,计算结果表明,对于0.46%的折射率变化,光子晶体线缺陷波导中的相位调制长度仅为均匀媒质中相位移调制长度的11.7%.通过以进一步研究,这种增强效应有望应用与高密度集成光路.     

用频谱分析法测量声光驻波调制器的调制度

从调制的基本概念出发，指出声光驻波调制器件为宽带频率调制型。讨论了调制度概念的成立条件和适用范围。理论上求出其成立条件为ｖ＜０．９（ｖ＝２πＬ△ｕ／λ为衍射光强Ｉ（θ，ｔ）中的自变量）。鉴于一般驻波型声光器件都是含有一定的行波成份，但行波声场和驻波声场在拉曼－奈斯衍射范围内衍射角均遵从ｓｉｎθｍｉ＝土ｍλ／，故两者在空间上是无法分开的。文中给出了从频域上测量调制度Ｍ的一种新方法。并给出了零级和一般衍射光的测量值。     

Millimeter wave generation through frequency 12-tupling using DP-polarization modulators

The polarization modulators are being utilized for the millimeter wave (MM-Wave) generation because of their bias drift free operation and high extinction ratio. In this work, an optical millimeter wave generation through frequency 12 tupling using dual parallel polarization modulator (DP-PolM) is demonstrated. By setting RF drive voltage and proper polarization angle of the DP-PolM, the frequency 12-tupled optical millimeter is generated with an optical sideband suppression ratio (OSSR) of 37.76 dB and radio frequency sideband suppression ratio (RFSSR) of 31.67 dB. A good agreement between simulation and theoretical approach is achieved. Further, impact of non ideal parameters on the OSSR, RFSSR and BER are also analysed and presented.     

The development of nonradiative dielectric waveguide transmitting front-end in Ka-band

The operating theory,design method and experimental results of the nonradiative dielectric waveguide (NRD-guide) transmitting front-end in millimeter wave band are related in details in this paper. As a kind of dielectric waveguide,the NRD-guide possesses fine transmission performances, and it can be used to fabricate the millimeter wave hyterodyne integrated circuits. The two kinds NRD-guide transmitting front-ends substantiated in the paper, the voltage controlling oscillator(VCO) and twin-Gunn-diode power-combiner,have very similar structures to each other and possess compact sizes, fine machinery and electric performances.For the VCO front-end in Ka-band, the frequency modulation band is greater than 150MHz, the output power is larger than 20mW.For the power-combiner, the output power is larger than 40mW,the combination efficiency is better than 90%,the frequency stabilization reaches 1.68×10^–5. Combined with the receiving front-end reported before,the transmitter and receiver can be composed to a dielectric waveguide R/T module to be applied in some millimeter wave sub-systems.     

300GHz超导SIS接收机系统的设计与构建

超导SIS(Superconductor-Insulator-Superconductor)混频技术是新兴的低噪声检测技术.其卓越的低噪声性能已使其成为毫米波和亚毫米波频段灵敏度最高的谱线接收设备,接收机的自动控制和稳定性有更高的要求,研制能够长期稳定工作的接收机有很重要的意义.本文主要讨论了我们自行研究设计工作在4K温度,准光学系统的毫米波超导SIS接收机的组成部件,根据我们制备的超导SIS隧道结器件的特性指标,计算设计了300GHz波段的超导接收机天线和结的集成芯片.     

Integrated electro-optic platform using ferroelectric crystals with the point symmetry of orthorhombic mm2

We theoretically and numerically investigate the modulation efficiencies of integrated electro-optic (EO) modulators based on ferroelectric crystals with the point symmetry of orthorhombic mm2. An analytical expression describing the index-ellipsoid under the EO effect is derived, where all 5 non-zero linear EO coefficients of mm2-crystals are considered. As practical candidates for integrated EO platform, three mm2-crystals (KNbO₃, KTiOPO₄, and Ba₂NaNb₅O₁₅) that are well-established and commercially available are chosen for numerical simulations. The refractive-index (RI) changes caused by an external electric field applied to each crystal with an arbitrary direction are analyzed in detail for the given optical polarization states of input light wave. For each crystal, the modulation efficiency is evaluated in terms of the half-wave voltage required for a π-phase shift of input wave, which is compared with the established counterpart based on LiNbO₃. The results indicate that higher modulation efficiencies are achievable in the two schemes using KNbO₃ and Ba₂NaNb₅O₁₅ than those for other cases, meaning that either lower power-consuming or larger beam-window integrated EO devices are feasible.     

Folded waveguide circuit for broadband MM wave TWTs

In millimeter wave band, the folded waveguide circuit exists some advantages such as wide operating frequency band, high mechanism strength, better heat disspation, easy fabrication and lower cost. It is expected that contradictory between broadband and high power in millimeter wave range can be solved by using the folded waveguide circuit. Computational results of dispersion character and coupling impedance of the folded waveguide are given. It is shown that the folded waveguide has wide bandwidth character in millimeter wave band.     

Fabrication and performance of MMW and SMMW platelet horn arrays

Future spaceborne millimeter and sub-millimeter wave sensing systems will require the sensitivity and resolution only achievable with large focal plane array receiving systems. A technique has been developed for the low cost fabrication of large arrays of millimeter and sub-millimeter wave corrugated feed horns. These arrayed horns exhibit high efficiency and symmetrical receiving patterns and are compatible with integrated receivers. W-band test results of a 3×3 array are presented.     

Broadband 10 Gb/s operation of graphene electro‐absorption modulator on silicon

High performance integrated optical modulators are highly desired for future optical interconnects. The ultra‐high bandwidth and broadband operation potentially offered by graphene based electro‐absorption modulators has attracted a lot of attention in the photonics community recently. In this work, we theoretically evaluate the true potential of such modulators and illustrate this with experimental results for a silicon integrated graphene optical electro‐absorption modulator capable of broadband 10 Gb/s modulation speed. The measured results agree very well with theoretical predictions. A low insertion loss of 3.8 dB at 1580 nm and a low drive voltage of 2.5 V combined with broadband and athermal operation were obtained for a 50 μm‐length hybrid graphene‐Si device. The peak modulation efficiency of the device is 1.5 dB/V. This robust device is challenging best‐in‐class Si (Ge) modulators for future chip‐level optical interconnects.     

High-repetitive frequency millimeter-wave signal generation using multi-cascaded external modulators based on carrier suppression technique

We have numerically and experimentally investigated how to generate high-repetitive frequency millimeter (mm)-wave using multi-cascaded intensity modulators based on optical carrier suppression (OCS) scheme. We have found the rule how to generate the high-repetitive frequency mm-wave by adjusting the repetitive frequency of the radio-frequency (RF) signals and the phase relation between the RF signals on the intensity modulators. Based on this rule, we have experimentally demonstrated to generate over 80 GHz optical mm-wave.