Enhanced photocatalytic activity of TiO2 thin film coating on microstructured silicon substrate

Photocatalytic TiO2 thin film is prepared by sol–gel technique on microstructured silicon substrate produced by femtosecond laser cumulative irradiation. The photocatalytic activity is evaluated by the degradation of methylene blue (MB) solution under ultraviolet (UV) irradiation. For 6-ml MB solution with initial concentration of 3.0×10~-5 mol/L, the degradation rate caused by TiO2 thin film of 2-cm~2 area is higher than 70% after 10-h UV irradiation. Microstructured silicon substrate is found to enhance photocatalytic activity of the TiO2 thin film remarkably. The femtosecond laser microstructured silicon substrate is suitable to support TiO2 thin film photocatalysts.     

On the physics of self-organized nanostructure formation upon femtosecond laser ablation

We present new results on femtosecond LIPSS on silicon, fostering the dynamic model of self-organized structure formation. The first set of experiments demonstrates LIPSS formation by irradiation with a femtosecond white light continuum. The ripples are, as usual, perpendicular to the light polarization with a fluence-dependent wavelength between 500 and 700 nm. At higher dose (fluence × number of shots), the LIPSS turn to much coarser structures. The second set of experiments displays the dose dependence of pattern evolution at about threshold fluence. In contrast to the general case of multi-pulse LIPSS, where a strong dependence of the structures on the laser polarization is observed, single-shot exposition of silicon at about the ablation threshold results in a concentric pattern of very regular sub-wavelength ripples following the oval shape of the irradiated spot, without any reference to the laser polarization. When increasing the number of pulses, the usual, typical ripples develop and then coalesce into broader perpendicular structures, interlaced with remnants of the first, finer ripples.     

不同气氛下飞秒激光诱导硅表面微结构

利用钛宝石飞秒激光脉冲对单晶硅在SF6、空气和真空环境中进行了累积脉冲辐照,研究了硅表面微结构的演化。在SF6气氛中,在激光辐照的初始阶段,硅表面形成了1维的波纹结构,随着辐照脉冲数的增加,波纹结构演化成了2维凹凸结构。累积600个脉冲后,硅表面产生了准规则排列且具有大纵横比的锥形尖峰结构。该结构呈现高度相对较低、锥形尖端小球不明显的特征,分析认为主要与环境气压的大小有关。对比空气、SF6和真空中的微结构发现,尖峰的数密度依次减小;SF6中形成的尖峰高度最大,其次为真空,再次为空气。研究结果表明,真空、SF6和空气3种环境下微结构的形成及表面形貌主要由激光烧蚀、化学刻蚀和氧化决定。     

A general continuum approach to describe fast electronic transport in pulsed laser irradiated materials: The problem of Coulomb explosion

We present a continuum model, based on a drift-diffusion approach, aimed at describing the dynamics of electronic excitation, heating, and charge-carrier transport in different materials (metals, semiconductors, and dielectrics) under femtosecond and nanosecond pulsed laser irradiation. The laser-induced charging of the targets is investigated at laser intensities above the material removal threshold. It is demonstrated that, for near-infrared femtosecond irradiation, charging of dielectric surfaces causes a sub-picosecond electrostatic rupture of the superficial layers, alternatively called Coulomb explosion (CE), while this effect is strongly inhibited for metals and semiconductors as a consequence of superior carrier transport properties. On the other hand, application of the model to UV nanosecond pulsed laser interaction with bulk silicon has pointed out the possibility of Coulomb explosion in semiconductors. For such regimes a simple analytical theory for the threshold laser fluence of CE has been developed, showing results in agreement with the experimental observations. Various related aspects concerning the possibility of CE depending on different irradiation parameters (fluence, wavelength and pulse duration) and material properties are discussed. This includes the temporal and spatial dynamics of charge-carrier generation in non-metallic targets and evolution of the reflection and absorption characteristics. PACS  79.20.Ds, 52.50.Jm     

Raman spectroscopic study of femtosecond laser-induced phase transformation associated with ripple formation on single-crystal SiC

Raman spectroscopy was performed to investigate microscopic structural changes associated with a ripple structure formation initiated by femtosecond laser irradiation on the surface of single-crystal silicon carbide. The amorphous phases of silicon carbide, silicon, and carbon were observed. The intensity ratio between amorphous silicon carbide and silicon changed discretely at the boundary between fine and coarse ripples. The physical processes responsible for the formation of the ripple structure are discussed.     

Nanofoaming dynamics in biopolymers by femtosecond laser irradiation

We have recently shown that irradiation of self-standing films of the biopolymers collagen and gelatine with single femtosecond laser pulses produces a nanofoaming layer with regular bubble size which can be controlled by wavelength selection. Following these initial studies, here we report on the temporal evolution of the foaming effect by measurements in situ and in real time of the change in the transmittance of a cw probe HeNe laser through the irradiated films. Self standing films of the biopolymers were irradiated with 90 fs laser pulses at 800, 400, and 266 nm. For fluences below and above the modification threshold a permanent attenuation of the transmission occurs (increasing with fluence). The initial decay of the transmission is fast (around few tens of ns), and is followed by dynamics in the longer timescale (micro and milliseconds). The temporal evolution of the transmission measured upon fs laser irradiation is similar with that determined in the irradiation of the biopolymer films at 248 nm with 25 ns laser pulses. The method allows separating in time the different processes occurring after irradiation that lead to a permanent nanofoaming structure, while the results allow us to understand the mechanisms of femtosecond laser processing of the biopolymers and their interest in biomedical applications.     

Laser removal of mold growth from paper

Femtosecond laser nano-processing by enhanced light scattered from nanospheres has received much attention. Enhanced scattered near field enables us to ablate nanoholes at nanometer scales below the diffraction limit. In addition, the interference between the scattered far field and the irradiated laser enables us to fabricate spatially controlled periodic surface structures. In this paper, we simulated the time evolution of scattered near field and far field during the free electron excitation in silicon (Si) by femtosecond laser irradiation. The optical property of Si changes from dielectric to metal-like Si due to the increase of the free electron number density excited by femtosecond laser pulse. It is elucidated that the scattered field of Si shifts from Mie scattering to plasmonic scattering during laser irradiation. We achieved the optimal free electron density and laser intensity for precisely controlled periodic surface structures fabrication. We explained the temporal behavior of the scattering near field and far field from the standpoint of dielectric function of the materials.     

Light filaments in air for ultraviolet and infrared wavelengths

The propagation of femtosecond UV laser pulses in air is numerically shown to form intense light filaments over several tenths of Rayleigh lengths. We compare UV filamentation with IR filamentation and show that the balance of the physical processes supporting the filaments is identical in both cases. For IR and UV wavelengths, it is shown that the intensity in the filament and the density of the electron plasma created by ionization of air molecules reach similar values as high as 10(14) W/cm(2) and 10(17) cm(-3). Spectral data exhibit a large broadening in the IR filament and a limited one for UV, which justifies the white-light generation associated with IR filamentation only.     

Multipulse feedback in self-organized ripples formation upon femtosecond laser ablation from silicon

The influence of positive feedback on self-organized nanostructure (ripples) formation is investigated for multipulse femtosecond laser ablation from silicon surface. We find an increase of the modified surface area and of complexity and feature size with accumulated dose, confirming the previously postulated feedback effect of dose accumulation. More interestingly, a variation of temporal pulse-to-pulse separation, at constant total incident irradiation dose, strongly affects the structure formation. Though the feedback becomes weaker with increasing time intervals between successive pulses, pulses do not act independently even for separations of up to one second. To account for this observation, a model of perturbation decay and outdiffusion from the excited volume is suggested and compared to the experimental results. Inspection by surface sensitive microscopy (AFM, SEM) and conventional and high-resolution transmission electron microscopy reveal complex structural modification upon the laser interaction: even well outside the irradiated area, the target surface exhibits fine ripple-like undulations, consisting of alternating crystalline and amorphous silicon. This is confirmed by photoluminescence studies on the band–band and the dislocation-related D1-line.     

Surface roughness assisted 100 kHz femtosecond laser induced nanostructure formation on silicon surface

Spontaneous nanostructure formations on roughened and smooth silicon surface by the femtosecond laser irradiation with the repetition rate of 100 kHz were systematically studied. In addition to the widely accepted so-called coarse ripple, which has the period analogous to the wavelength of the laser beam and aligns perpendicularly to the electric field of the incident laser beam, the ripple which has the period similar to the wavelength of the incident laser beam but aligns parallel to the electric field of the laser beam was observed on the roughened surface for the lower fluence and the higher number of pulse irradiation. Furthermore, the ensemble of dots formed by the enhancement of the local electric field was found on the roughened surface. This structure is preferentially formed around the scratches aligned perpendicularly to the electric field of the laser beam. These novel nanostructures are considered to be peculiar to the femtosecond laser irradiation and open the possibilities for precise control of the spontaneous nanostructure formation by femtosecond laser irradiation.     

Ultrafast changes in the optical properties of a titanium surface and femtosecond laser writing of one-dimensional quasi-periodic nanogratings of its relief

One-dimensional quasi-periodic nanogratings with spacings in the range from 160 to 600 nm are written on a dry or wet titanium surface exposed to linearly polarized femtosecond IR and UV laser pulses with different surface energy densities. The topological properties of the obtained surface nanostructures are studied by scanning electron microscopy. Despite the observation of many harmonics of the one-dimensional surface relief in its Fourier spectra, a weak decreasing dependence of the first-harmonic wavenumber (nanograting spacing) on the laser fluence is found. Studies of the instantaneous optical characteristics of the material during laser irradiation by measuring the reflection of laser pump pulses and their simulation based on the Drude model taking into account the dominant interband absorption allowed us to estimate the length of the excited surface electromagnetic (plasmon-polariton) wave for different excitation conditions. This wavelength is quantitatively consistent with the corresponding nanograting spacings of the first harmonic of the relief of the dry and wet titanium surfaces. It is shown that the dependence of the first-harmonic nanograting spacing on the laser fluence is determined by a change in the instantaneous optical characteristics of the material and the saturation of the interband absorption along with the increasing role of intraband transitions. Three new methods are proposed for writing separate subwave surface nanogratings or their sets by femtosecond laser pulses using the near-threshold nanostructuring, the forced adjustment of the optical characteristics of the material or selecting the spectral range of laser radiation, and also by selecting an adjacent dielectric.     

Self-organized nanostructure by a femtosecond laser on silicon

In this paper, ripple structure and hole arrays were investigated. Techniques based on laser scanning microscopes for the processing of periodic structures on silicon with a femtosecond laser (800 nm, 1 kHz, 130 fs) had been used. Ripples and any holes were obtained after laser irradiation in air with S and P polarization. The effect of the scanning speed (v) and the lens with different numerical apertures (NA) on the laser-induced surface topography were studied. We found that the femtosecond laser produces periodic ripples on the silicon surface of the submicron level, the width of line has a tight relationship to the NA and scanning speed. Finally, we process the microapparatus on silicon, for which the wide channel was 800 nm.     

Photoinduced microchannels and element change inside silicon by femtosecond laser pulses

Microchannels are fabricated inside silicon along the direction of laser beam by a femtosecond laser at 800 nm, which is located at the absorption region of silicon. Formation mechanism of the microchannels is attributed to spherical aberration. The element change in surrounding of the microchannel is characterized, and results show that oxygen is incorporated into silicon after irradiation. The origin of the oxygen incorporation and the laser intensity dependence of the amount of oxygen are discussed, respectively.     

Ultrafast blue light emission from SiC nanowires

Cubic silicon carbide (SiC) nanowires are synthesized in a catalyst-assisted process. The nanowires with diameter of ～ 40 nm exhibit strong blue light emission at room temperature under ultraviolet (UV) femtosecond laser excitation. The photon energy of peak emission is higher than the energy bandgap of cubic SiC which shows involvement of quantum confinement effect. The ultrafast fluorescence is deconvoluted by Monte-Carlo method. The results show two ultrafast decay processes whose lifetimes are about 26 and 567 ps respectively. The mechanisms of such ultrafast processes are discussed.     

Femtosecond nanostructuring of silicon surfaces

Nanostructures were formed upon the irradiation of single-crystal silicon surfaces with femtosecond laser pulses. These nanostructures were detected using scanning electron microscopy, Raman spectroscopy, and a photoluminescence technique.     

表面微构造的硅材料--一种新型的光电功能材料

在SF6气体氛围内用飞秒激光照射硅表面,可在硅表面产生准规则排列的微米量级尖峰结构,形成“黑硅”新材料．初步研究表明,这种“黑硅”新材料对波长为250-2500nm的光波有大于90％的吸收,同时它还具有相当好的场致发射特性．由于具有这些奇特的光电性质,这种表面微构造的硅材料在光电探测器、太阳能电池、平板显示器等器件制造领域有着重要的潜在应用价值．     

Nd:YAG纳秒激光诱导硅表面微结构的演化

利用Nd:YAG纳秒激光(波长为532和355 nm)对单晶硅在真空中进行了累积脉冲辐照,研究了表面微结构的演化情况.在激光辐照的初始阶段,532和355 nm激光脉冲均在硅表面诱导出了波纹结构,后者辐照硅表面后形成了近似同心但稍显混乱的环形波纹结构.随着脉冲数的增加,波纹结构逐渐演化为一种类似珠形的凹凸结构,最后形成准规则排列的微米量级锥形结构,该微结构的生长依赖于表面张力波和结构自组织.分析发现,形成的交叉环形结构主要是在355 nm激光辐照硅的过程中,表面张力波导致波纹结构部分叠加的结果.     

Controllable photoinduced optical attenuation in a single-mode optical fiber by irradiation of a femtosecond pulse laser

Novel optical attenuation fibers were fabricated by the irradiation of a focused infrared femtosecond pulsed laser onto the core of a silica glass single-mode optical fiber. Optical attenuation at a wavelength of 1.55 microm proportionally increased with increasing numbers of irradiation points and was controllable under laser irradiation conditions. The single-mode property of the waveguide and the mode-field diameter of the optical fiber were maintained after irradiation of the femtosecond laser. It is suggested that the attenuation results from optical scattering at photoinduced spots formed inside the fiber core.     

Effect of Doping on the Properties of Hydrogenated Amorphous Silicon Irradiated with Femtosecond Laser Pulses

A comparative analysis of the effect of femtosecond laser irradiation on the structure and conductivity of undoped and boron-doped hydrogenated amorphous silicon (a-Si: H) is performed. It is demonstrated that the process of nanocrystal formation in the amorphous matrix under femtosecond laser irradiation is initiated at lower laser energy densities in undoped a-Si: H samples. The differences in conductivity between undoped and doped a-Si: H samples vanish almost completely after irradiation with an energy density of 150–160 mJ/cm².     

Role of ambient gas in heating of metal samples by femtosecond pulses of laser radiation

In this work we consider an experimentally observed effect of significant increasing of the residual heat in metal targets at their irradiation with femtosecond laser pulses in an ambient gas in respect to the vacuum conditions. Numerical modelling of heating of a platinum target by femtosecond laser pulses in argon under normal conditions has been performed taking into account gas breakdown in the focussing region of the laser beam in front of the target. The applied model is based on a combination of a thermal model describing heating and phase transitions in irradiated samples and a hydrodynamic model to describe motion of the ambient gas perturbed by laser irradiation as a result of multiphoton ionization. The hot ambient gas is shown to heat efficiently the irradiated sample. The hydrodynamic processes in the ambient gas play an important role in heating. This work was financially supported by the Russian Foundation for Basic Research (Project 08-01-00264-a) and the INTAS/SB RAS Program (Project 06-1000013-8949).