120keV的N+注入SiC薄膜的光谱特性研究

文中主要研究了120keV的N⁺注入后SiC薄膜样品的光致发光谱(PL)和傅立叶红外光谱(FTIR)特性.从红外光谱可以看到有明显得碳氮单键、双键、三键等新结构生成.从PL光谱则发现365nm处的发光峰明显增强,这表明N⁺注入使得带隙中深的能级辐射中心复合的效率大幅度提高     

注氦尖晶石的红外光谱研究

利用傅立叶变换红外光谱仪对注He尖晶石样品随退火温变化而引起光吸收性能的变化进行了研究。发现尖晶石样品在626.4cm^-1附近的吸收峰随注入剂量的增加向小波数方向移动,而在随后退火过程该吸收峰随退火温度的增加而向大波数方向回复。该吸收峰的回复行为依赖于注入剂量和退火温度。认为在626.4cm^-1附近吸收峰随注入剂量和退火温度的这种变化与尖晶石中He的俘获以及释放有关。     

注氦尖晶石的红外光谱研究

利用傅立叶变换红外光谱仪对注He尖晶石样品随退火温变化而引起光吸收性能的变化进行了研究。 发现尖晶石样品在626.4 cm-1附近的吸收峰随注入剂量的增加向小波数方向移动, 而在随后退火过程该吸收峰随退火温度的增加而向大波数方向回复。 该吸收峰的回复行为依赖于注入剂量和退火温度。 认为在626.4 cm-1附近吸收峰随注入剂量和退火温度的这种变化与尖晶石中He的俘获以及释放有关。 The infrared absorption behavior of helium implanted spinel with annealing temperature was studied by Fourier transformed infrared (FTIR) spectroscopy. It was found that the absorbance peak at 626.4 cm-1 shifted to smaller wave numbers with the increase of implantation fluence, while on subsequent annealing the absorbance peak shifted back to larger wave numbers with the increase of annealing temperature. The shift of the peak at 626.4 cm-1 with He implantation/annealing is considered to be related with the trapping and release of helium atoms in lattice sites in the spinel crystal.     

低能离子对氨基酸损伤的红外光谱研究

分别轻注入机和气体常压孤光放电产生的你了子作用于固态和溶液中的氨基酸,研究了样品红外光谱的变化。结果表明,两种方式产生的离子对氨基酸有相同或相似的损伤作用,如分子重排、外来离子沉积等,而且低能离子作用于溶液样品表现出更显著、更丰富的损伤效果。     

桑叶的红外光谱和紫外光谱研究

桑叶为药食两用的原料,具有降血糖、降血压、降血脂、延缓衰老等多种保健功效。本文首先采用了傅立叶变换红外光谱法直接、快速、准确地测定了桑叶的红外光谱图,根据桑叶的峰位,我们可以推断出桑叶可能含有醇、酚、烷烃、烯、蛋白质和多糖等化学成分;然后进行了紫外光谱分析及红外光谱和紫外光谱的对比分析,其结论为桑叶的识别、鉴定和药理分析提供了一定的科学依据。     

续断和龟板的红外光谱研究

续断和龟板是两种典型的中药材,续断是植物药材,龟板是动物药材。本文采用傅立叶变换红外光谱法测定了续断和龟板的红外光谱图。续断和龟板的红外光谱区别十分明显,但也有相同或相似的峰存在。续断中主要成分为淀粉、纤维素、生物碱、木质素等;龟板中主要成分为脂肪、胶质、钙、磷等。此外续断有跌打损伤的主治药效可能与三萜类化合物的生理活性有关;龟板具有止痛功效可能与含有挥发油成分有关。     

温度对胶原蛋白结构影响的二维红外相关光谱的研究

采用傅立叶红外光谱法(FTIR)和二维相关分析(2D Correlation Analysis)技术研究了胶原蛋白在加热(15℃～95℃)条件下构象变化的规律.结果表明:二维相关分析能提供由温度变化引起的蛋白构象变化过程中分子结构动态变化的微观信息,为揭示胶原蛋白的结构特征和变温微扰引起的结构变化机理提供了一些有意义的实验依据和初步的理论分析.     

PVC敏感膜离子识别作用的傅立叶变换——衰减全反射红外光谱研究

为了观察PVC敏感膜各成分在对离子识别时发生的变化,应用傅立叶变换-衰减全反射红外光谱研究了含有二苯并24冠8的PVC敏感膜对多种离子的识别作用。傅立叶变换-衰减全反射红外光谱显示,在PVC敏感膜与浓度为0.1mol/L的CdSO4、ZnSO4、Pb(NO3)2、Na2SO4、KCl、NaCl溶液分别反应后,归属于二苯并24冠8的吸收峰,峰高明显增高,其他一些吸收峰也有增高;而PVC敏感膜与浓度为0.1mol/L的Li2SO4、MgCl2分别反应后,PVC敏感膜各吸收峰无显著变化。还讨论了影响识别作用的一些因素,如反应时间、阴离子的作用、敏感膜发生识别作用的位置。结果表明:含有二苯并24冠8的PVC敏感膜对不同离子有选择识别的作用,可选择识别Cd2+、Zn2+、Pb2+、K+、Na+,不能识别Li+、Mg2,PVC敏感膜中的中性离子载体二苯并24冠8对离子的识别起主要作用,四(4—氯苯)硼钾也参与了识别作用。     

用傅立叶变换红外光谱法研究核辐照对人参粉成分的影响

本文采用傅立叶变换红外光谱(吸收光谱、二阶导数谱及差谱)法对经不同剂量核辐照的人参粉进行了对比研究.辐照剂量不高于9 kGy时,人参粉样品的化学成分几乎没有发生变化;人参粉样品经15kGy及以上的辐照剂量辐照后,可能产生新的化学成分,表明采用辐照剂量不高于9 kGy的核辐照杀灭人参粉污染的微生物和各种寄生虫卵是可行的;...     

用傅立叶变换红外光谱法研究核辐照对虫草粉成分的影响

本文采用傅立叶变换红外光谱(卷积谱及二阶导数谱)法对经不同剂量核辐照的虫草粉进行了对比研究。虫草粉中碳水化合物(糖和纤维素)、蛋白质及脂肪含量较高; 虫草的多糖及酯对核辐照较为敏感, 辐照还使分子中吡喃环的C-O-H基团向多糖的O-H和酯的C-O-C基团转化; 构成虫草蛋白质的多肽是α构象的; 低于18 kGy剂量辐照虫草粉样品对虫草蛋白质影响很小, 但对虫草主要有效成分(含有C-N基团和N-H基团成分)影响较大; 高于18 kGy剂量辐照虫草粉样品对虫草蛋白质、多糖及酯的分子结构可能产生了破坏。建议不宜采用核辐照对虫草粉杀菌消毒处理。     

Electrical and optical characteristics of vanadium in 4H-SiC

A semi-insulating layer is obtained in n-type 4H-SiC by vanadium-ion implantation. A little higher resistivity is obtained by increasing the annealing temperature from 1450 to 1650℃. The resistivity at room temperature is as high as 7.6×10⁶\Omega .cm. Significant redistribution of vanadium is not observed even after 1650℃ annealing. Temperature-dependent resistivity and optical absorption of V-implanted samples are measured. The activation energy of vanadium acceptor level is observed to be at about E_C-1.1eV.     

双外延基区4H-SiC BJTs的建模与仿真

基于4H-SiC的材料特性,对具有双外延基区结构的4H-SiC双极晶体管进行研究.通过分析该结构在基区内部形成的自建电场以及基区渡越时间,利用正交试验的方法,基于各种器件二维模型,对该器件结构进行数值计算,并进行平均极差分析.计算结果表明,该器件的共发射结电流增益最高可达72,具有负温度系数,并且在一个很宽的集电极电流范围内该特性保持不变.     

4H-SiC材料在紫外波段吸收系数的分析研究

基于已报道的4H-SiC材料在紫外波段(325—390nm)吸收系数的测定,结合经验公式,采用外推和多项式拟合方法分析4H-SiC材料在200—400nm紫外波段的吸收系数,并得到4H-SiC材料的吸收系数与波长的关系式。对4H-SiC吸收系数的分析研究将作为4H-SiC光电探测器结构设计的一个重要依据。     

XRD法计算4H-SiC外延单晶中的位错密度

对用X射线衍射法计算4H-SiC外延中的位错密度方法进行了理论和实验研究。材料中的位错密度大于106 cm-2会给材料位错密度的测试会带来一定的困难。首先从理论上分析了位错密度对X射线衍射结果的影响,得出位错密度和峰宽FWHM展宽的关系。然后对4H-SiC样品进行了X射线三轴晶ω-2θ测试,采用不同晶面衍射峰,计算出样品的位错密度。分析了外延中位错产生的原因,并提出了相应的解决办法。     

Study of 4H-SiC junction barrier Schottky diode using field guard ring termination

This paper reports that the 4H-SiC Schottky barrier diode, PiN diode and junction barrier Schottky diode terminated by field guard rings are designed, fabricated and characterised. The measurements for forward and reverse characteristics have been done, and by comparison with each other, it shows that junction barrier Schottky diode has a lower reverse current density than that of the Schottky barrier diode and a higher forward drop than that of the PiN diode. High-temperature annealing is presented in this paper as well to figure out an optimised processing. The barrier height of 0.79 eV is formed with Ti in this work, the forward drop for the Schottky diode is 2.1 V, with an ideality factor of 3.2, and junction barrier Schottky diode with blocking voltage higher than 400 V was achieved by using field guard ring termination.     

退火对非故意掺杂4H-SiC外延材料386 nm和388 nm发射峰的影响

10 K条件下,采用光致发光(PL)技术研究了不同退火处理后非故意掺杂4H-SiC外延材料的低温PL特性.结果发现,在370—400 nm范围内出现了三个发射峰,能量较高的峰约为3.26 eV,与4H-SiC材料的室温禁带宽度相当.波长约为386 nm和388 nm的两个发射峰分别位于~3.21 eV和~3.19 eV,与材料中的N杂质有关.当退火时间为30 min时,随退火温度的升高,386 nm和388 nm两个发射峰的PL强度先增加后减小,且退火温度为1573 K时,两个发射峰的PL强度均达到最大. 关键词： 光致发光 退火处理 能级 4H-SiC     

低能离子注入宫颈癌细胞的红外光谱分析

利用离子注入机所产生的低能N+模仿宇宙中低能离子作用于人宫颈癌细胞(HeLa cell),探索其对人类细胞的影响及作用机制。因实验中的低能离子产生和加速要在真空中进行,细胞在离子注入同时将受到真空的影响,为此研究人员利用石蜡油保护细胞以防止注入时的水份蒸发。注入处理完毕后收集细胞,采用傅里叶变换红外光谱法(FTIR)分析真空和低能N+束注入后细胞中大分子的相对含量、构型及其构象变化等方面的信息。结果表明：(1)不同处理后的样品在3 300 cm-1附近吸收谱带存在明显差异。对照样品的特征峰位为3 300 cm-1,而其他样品中除了注入5×1014 N+·cm-2外,红外吸收峰均向长波数方向移动,真空2×1015 N+·cm-2样品的频移尤为明显至3 420 cm-1处。(2)与对照样品相比较,各处理样品的1 378 cm-1处吸收峰峰位均向长波数方向频移。(3)处理样品相对于对照样品而言,2 360 cm-1处吸收峰均向长波数方向移动。该结果说明低能离子注入处理可以引起细胞中核酸、蛋白的含量和构象变化。     

Blistering kinetics in H-implanted 4H-SiC for large-area exfoliation

Layer transfer of single-crystalline SiC based on layer splitting and wafer bonding on an alternate substrate is a viable approach to fabricate SiC power devices at a lower cost. Dependence of implantation-induced surface blistering and exfoliation of thin layers, on the implantation parameters and subsequent annealing conditions, for large area exfoliation of 4H-SiC have been studied. We report the optimization of the annealing process (one-step or two-step) and annealing parameters like temperature and time to achieve large area exfoliation of SiC. Using the Föppl-von Karman (FvK) theory, the pressure inside the blister cavities and implantation-induced stress inside the damage region have been studied. We deduce that pressure inside the blister depends primarily on the blister size. HRXRD analysis has been used to determine the strain relaxation behavior as a function of annealing conditions. Raman spectroscopy and STEM measurements revealed the formation of defects inside the material due to ion implantation. AFM, Nomarski, and SEM were used to measure the size and depth details of the blisters as a function of annealing temperature and time. We have successfully exfoliated large area (up to 500 μm) in a two-step annealing process. The results reported in this paper are useful for SiC layer transfer on an arbitrary substrate by the Smart Cut process.     

Influences of annealing on structural and compositional properties of Al_2O_3 thin films grown on 4H–SiC by atomic layer deposition

Annealing effects on structural and compositional performances of Al_2O_3 thin films on 4H–Si C substrates are studied comprehensively. The Al_2O_3 films are grown by atomic layer deposition through using trimethylaluminum and H_2 O as precursors at 300?C, and annealed at various temperatures in ambient N_2 for 1 min. The Al_2O_3 film transits from amorphous phase to crystalline phase as annealing temperature increases from 750?C to 768?C. The refractive index increases with annealing temperature rising, which indicates that densification occurs during annealing. The densification and grain formation of the film upon annealing are due to crystallization which is relative with second-nearest-neighbor coordination variation according to the x-ray photoelectron spectroscopy(XPS). Although the binding energies of Al 2p and O 1s increase together during crystallization, separations between Al 2p and O 1s are identical between as-deposited and annealed sample, which suggests that the nearest-neighbour coordination is similar.     

Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO

The interface properties and electrical characteristics of the n-type 4H-SiC planar and trench metal–oxide–semiconductor(MOS) capacitors are investigated by measuring the capacitance voltage and current voltage. The flat-band voltage and interface state density are evaluated by the quasi-static method. It is not effective on further improving the interface properties annealing at 1250℃ in NO ambient for above 1 h due to the increasing interface shallow and fast states.These shallow states reduce the effective positive fixed charge density in the oxide. For the vertical MOS capacitors on the(1120) and(1100) faces, the interface state density can be reduced by approximately one order of magnitude, in comparison to the result of the planar MOS capacitors on the(0001) face under the same NO annealing condition. In addition, it is found that Fowler–Nordheim tunneling current occurs at an oxide electric field of 7 MV/cm for the planar MOS device.However, Poole–Frenkel conduction current occurs at a lower electric field of 4 MV/cm for the trench MOS capacitor. This is due to the local field crowded at the trench corner severely causing the electrons to be early captured at or emitted from the SiO_2/Si C interface. These results provide a reference for an in-depth understanding of the mobility-limiting factors and long term reliability of the trench and planar SiO_2/Si C interfaces.