Optimization of ultraviolet laser doping for crystalline silicon solar cells with a novel segmented selective emitter design

This paper reports on the use of ultraviolet laser for forming segmented selective emitters on POCl ₃ n ⁺ –p–p ⁺ solar cells. Laser scan speed, pulse power, and repetition rate are optimized to minimize laser‐induced defects, which are found to enhance recombination and reduce the local open‐circuit voltage. Laser‐doped selective emitters formed by locally driving in additional phosphorous from the diffusion glass are well suited for an etchback process without the need for a mask. In this paper, we show a novel selective emitter design that is segmented instead of continuous, combined with an emitter etchback process gives an efficiency improvement of about 0.3% absolute over a standard industrial type solar cell and 0.2% absolute improvement over a non‐segmented selective emitter solar cell. Copyright © 2012 John Wiley & Sons, Ltd.     

高能纳秒激光烧蚀单晶硅的微观结构

高能纳秒激光烧蚀硅时,往往会伴随着相爆炸过程,它决定了烧蚀的形貌特征。基于相爆炸的物理过程,分析了相应的烧蚀形貌：相爆炸的发生会使得硅材料发生大范围的去除,高温熔化材料的混合物向外喷溅,冷却形成放射状的冷却条,期间分布着冷却的球状微粒;超热液体的去除部位形成一个类似花瓣状坑,在坑中由于入射光与散射光的干涉形成条纹,其周期与激光光波相似。     

Investigation of laser ablation on boron emitters for n‐type rear‐junction PERT type silicon wafer solar cells

n‐type silicon wafer solar cells are receiving increasing attention for industrial application in recent years, such as the n‐type rear‐junction Passivated Emitter Rear Totally‐diffused (PERT) solar cells. One of the main challenges in fabricating the n‐PERT solar cells is the opening of the rear dielectric for localized contacts. In this work laser ablation is applied to locally ablate the rear dielectric. We investigate the laser damage to the emitter at the laser‐ablated regions using the emitter saturation current density, J_0e,laser, extracted by two approaches. J_0e,laser is observed to be injection dependent due to high J₀₂ recombination caused by laser damage to the space charge region. By using the optimized laser ablation parameters, n‐PERT solar cells with an efficiency of up to 21.0% are realized. Copyright © 2015 John Wiley & Sons, Ltd.     

Influence of precursor layer ablation on laser doping of silicon

This paper presents a numerical model, which quantitatively demonstrates that ablation and partial recondensation of the dopant precursor layer are some of the dominating physical processes in laser doping (LD) of crystalline silicon. Our pulsed LD process uses a line focused laser beam, enabling the creation of solar cell emitters without the generation of dislocations, if the width w of the short axis of the line focus is w < 10 μm. The concentration profiles of the dopant atoms strongly depend on the pulse energy density E_p, the pulse to pulse separation Δx and the number of laser scans N_s. By comparing measured with modeled concentration profiles, we are able to evaluate the ablation width as well as the amount of the ablated precursor layer. In case of a sputtered phosphorus precursor layer, the ablation width w_a is w_a = 6 μm, whereas the width of the molten silicon layer w_m is w_m = 5 μm. The model also explains the dependence of experimental dopant concentration profiles on the number of subsequent laser scans N_s and pulse to pulse separation Δ_x. Copyright © 2010 John Wiley & Sons, Ltd.     

超短脉冲激光对单晶硅太阳能电池的损伤效应

太阳能是未来的主要能源之一,关于太阳能电池的研究也逐渐成为热点。长期以来,人们对太阳能电池的高能粒子辐射特性进行了广泛的研究,对其激光辐照损伤特性的研究却很少。随着光电对抗技术的发展,对这方面的研究需求也越来越迫切。研究了532 nm、20 ns和300 ps脉冲激光对单晶硅太阳能电池的辐照效应,分析了超短脉冲激光对单晶硅太阳能电池的损伤机理。对比了超短脉冲激光和长脉冲激光、连续激光的损伤机理的异同。阐述了在激光单脉冲能量一定的情况下,损伤效果与脉宽和重频的关系。通过分析,指出了太阳能电池损伤的主因,激光对太阳能电池的破坏主要是依靠热效应。     

纳秒级强激光对多晶硅片光吸收性能的影响

采用兆瓦级TEA CO2激光器输出的纳秒级强红外激光脉冲照射太阳能多晶硅片,用红外光谱仪测试了硅片的吸收谱,发现经激光脉冲照射后的太阳能多晶硅片对光的吸收能力大为增强,并对实验结果做出了初步的分析。     

太阳能硅片双束激光划槽方法与装置

本文提出一种太阳能硅片双束激光划槽方法和装置,它利用Z型谐振腔的Nd:YAG激光器,声光Q开关调制,经直角棱镜发射双束激光,扩束聚焦输出到太阳能硅片表面,划槽最小线宽:20μm,最大划片速度:120mm/s、使生产率提高100%,节约能源30%。     

Thermal oxidation for crystalline silicon solar cells exceeding 19% efficiency applying industrially feasible process technology

Thermal oxides are commonly used for the surface passivation of high‐efficiency silicon solar cells from mono‐ and multicrystalline silicon and have led to the highest conversion efficiencies reported so far. In order to improve the cost‐effectiveness of the oxidation process, a wet oxidation in steam ambience is applied and experimentally compared to a standard dry oxidation. The processes yield identical physical properties of the oxide. The front contact is created using a screen‐printing process of a hotmelt silver paste in combination with light‐induced silver plating. The contact formation on the front requires a short high‐temperature firing process, therefore the thermal stability of the rear surface passivation is very important. The surface recombination velocity of the fired oxide is experimentally determined to be below S ≤ 38 cm/s after annealing with a thin layer of evaporated aluminium on top. Monocrystalline solar cells are produced and 19·3% efficiency is obtained as best value on 4 cm² cell area. Simulations show the potential of the developed process to approach 20% efficiency. Copyright © 2008 John Wiley & Sons, Ltd.     

基于正交实验的SUS304不锈钢激光打孔过程参量优化

为了优化激光打孔参量和提高激光打孔成型质量,采用正交实验法对5mm厚的SUS304不锈钢材料进行激光打孔实验研究和理论分析,测量和计算得到了激光打孔上下孔径和锥度的数据,并采用极差分析法得到了脉冲宽度、脉冲能量、重复频率、离焦量和脉冲个数等参量对小孔锥度的影响程度以及SUS304不锈钢激光打孔的最优实验参量组合。结果表明,离焦量、脉冲宽度和脉冲个数对孔锥度的影响较大,重复频率和脉冲能量的影响较小,优化后的激光参量为脉冲宽度0.5ms、脉冲能量2.5J、重复频率40Hz、离焦量0mm、脉冲个数200个。采用优化后的激光参量可加工出锥度较小的孔。     

Nd:YAG激光器切割硅薄膜太阳能电池的工艺参数研究

结合国内外激光薄膜加工研究结果,从激光与物质相互作用的角度出发,建立激光切割硅薄膜太阳能电池的柱面坐标理论模型。利用Monte Carlo法求得多层薄膜结构的光场分布,进一步用有限元法(fin ite elem entm ethod,FEM)求得柱面坐标下热平衡方程的数值解。得出了能量密度、脉冲形状、重复频率、光斑形状与切割速度以及切割质量之间的关系。     

Diffractive gratings for crystalline silicon solar cells—optimum parameters and loss mechanisms

In this paper, we present guidelines for the design of backside gratings for crystalline silicon solar cells. We use a specially developed method based on a combination of rigorous 3D wave optical simulations and detailed semiconductor device modeling. We also present experimental results of fabricated structures. Simulation‐based optimizations of grating period Λ and depth d of a binary grating and calculations of the optical and electrical characteristics of solar cells with optimized gratings are shown. The investigated solar cell setup features a thickness of d_bulk = 40 µm and a flat front surface. For this setup, we show a maximum increase in short‐circuit current density of Δj_SC = 1.8 mA/cm² corresponding to an efficiency enhancement of 1% absolute. Furthermore, we investigate different loss mechanisms: (i) an increased rear surface recombination velocity S_0,b because of an altered surface caused by the introduction of the grating and (ii) absorption in the aluminum backside reflector. We analyze the trade‐off point between gain due to improved optical properties and loss due to corrupted electrical properties. We find that, increasing the efficiency by 1% absolute due to improved light trapping, the maximum tolerable recombination velocity is S_0,b(max) = 5.2 × 10³ cm/s. From simulations and measurements, we conclude that structuring of the aluminum backside reflector should be avoided because of parasitic absorption. Adding a dielectric buffer layer between silicon and the structured aluminum, absorption losses can be tuned. We find that for a planar reflector, the thickness of a SiO₂ buffer layer should exceed = 120 nm. Copyright © 2011 John Wiley & Sons, Ltd.     

超快激光制备PMMA微流道机理及工艺研究

由于传统加工方法不能解决PMMA微流道的加工质量不好和效率低的问题,本文对超快激光直写PMMA制备微流道的烧蚀机理和工艺参数进行了研究。根据实验分析不同的激光功率、加工速度和加工次数对微流道的宽度和横截面的影响规律,利用超快激光加工系统制备微流道,并采用超景深三维显微镜观测微流道的表面形貌。实验结果表明,当超快激光的加工速度为20 mm/s时,激光功率为1.5 W时,制备的微流道的宽度较小、宽度趋势比较平稳;当超快激光作用PMMA的次数一样,由于加工速度逐渐增加,制备的微流道其宽度和激光的加工速度保持线性增加。当加工速度越大时,微流道的宽度较小、且壁面趋势相对平缓,而当加工速度一定,超快激光的输出功率在1.5 W时,微流道内壁区域不易出现残渣堆积和气泡隆起现象。本文通过优化超快激光加工系统的工艺参数,从而加工出尺寸精度高、表面光滑、宽度为20~90 μm的微流道芯片。     

20.1%‐efficient crystalline silicon solar cell with amorphous silicon rear‐surface passivation

We have developed a crystalline silicon solar cell with amorphous silicon (a‐Si:H) rear‐surface passivation based on a simple process. The a‐Si:H layer is deposited at 225°C by plasma‐enhanced chemical vapor deposition. An aluminum grid is evaporated onto the a‐Si:H‐passivated rear. The base contacts are formed by COSIMA (contact formation to a‐Si:H passivated wafers by means of annealing) when subsequently depositing the front silicon nitride layer at 325°C. The a‐Si:H underneath the aluminum fingers dissolves completely within the aluminum and an ohmic contact to the base is formed. This contacting scheme results in a very low contact resistance of 3.5 ±0.2 mΩ cm² on low‐resistivity (0.5 Ω cm) p‐type silicon, which is below that obtained for conventional Al/Si contacts. We achieve an independently confirmed energy conversion efficiency of 20.1% under one‐sun standard testing conditions for a 4 cm² large cell. Measurements of the internal quantum efficiency show an improved rear surface passivation compared with reference cells with a silicon nitride rear passivation. Copyright © 2005 John Wiley & Sons, Ltd.     

Stack system of PECVD amorphous silicon and PECVD silicon oxide for silicon solar cell rear side passivation

A stack of hydrogenated amorphous silicon (a‐Si) and PECVD‐silicon oxide (SiO_x) has been used as surface passivation layer for silicon wafer surfaces. Very good surface passivation could be reached leading to a surface recombination velocity (SRV) below 10 cm/s on 1 Ω cm p‐type Si wafers. By using the passivation layer system at a solar cell's rear side and applying the laser‐fired contacts (LFC) process, pointwise local rear contacts have been formed and an energy conversion efficiency of 21·7% has been obtained on p‐type FZ substrates (0·5 Ω cm). Simulations show that the effective rear SRV is in the range of 180 cm/s for the combination of metallised and passivated areas, 120 ± 30 cm/s were calculated for the passivated areas. Rear reflectivity is comparable to thermally grown silicon dioxide (SiO₂). a‐Si rear passivation appears more stable under different bias light intensities compared to thermally grown SiO₂. Copyright © 2008 John Wiley & Sons, Ltd.     

太阳能电池的电势诱导衰减及检测

晶体硅组件的电势诱导衰减是现在的晶体硅电池组件在高电压系统下广泛面临的失效模式。常规组件的测试方法需要至少96小时的测试时间。在本文中,我们试图通过实验找到一种快速的太阳能电池的抗电势诱导衰减性能的方法。采用NaCl溶液作为Na+源, PVB 作为封装材料,我们能够在1小时内完成实验。在使用了新的抗电势诱导衰减工艺的太阳能电池上也成功进行了测试。经过试验证明实验前后电池片的反向电流的变化是很重要的判断标准。通常具有抗电势诱导衰退性能的电池反向漏电试验后变化是小于2倍的。电池的结果和相对应的组件的测试结果进行了比较,结果显示两者吻合的很好。     

飞秒激光加工过程中光学参数对加工的影响

分析了国际上飞秒激光同材料相互作用的实验研究,介绍了飞秒激光加工过程中,各个光参数对加工质量和加工尺寸的影响,针对光参数在飞秒激光加工过程中产生的影响做出了分析。     

Sensitivity of state‐of‐the‐art and high efficiency crystalline silicon solar cells to metal impurities

For the first time, the sensitivity to impurities of the solar cell conversion efficiency is reported for a state‐of‐the‐art (i.e., 18%) and advanced device architecture (i.e., 23%). The data are based on the experimental results obtained in the CrystalClear project for the state‐of‐the‐art cell process and extrapolated to a device with excellent front and rear surface passivation. Both device structures are not assumed to work in low injection level as several studies assumed before, but real operating conditions are considered. This is a fundamental difference with the past and required for modeling future high efficiency devices. The impurity with highest impact is Ti, followed by Cu, Cr, Ni and Fe, which form together a group two order of magnitude less sensitive than the former. In high efficiency devices, a large reduction of the impurity impact is visible for impurities with large capture cross‐section ratio like Fe, which reduces its relative difference in comparison with, for example, Cr, which has a small capture cross‐section ratio. In general, advanced devices will be more sensitive to the impurity content than the state‐of‐the‐art cell design. This effect is partly compensated by a reduction of the substrate thickness. The impurity sensitivity as function of the substrate thickness is reported. Copyright © 2012 John Wiley & Sons, Ltd.     

长脉冲激光辐照单晶硅的热损伤

为探究毫秒脉冲激光辐照单晶硅的热损伤规律和机理,利用高精度点温仪和光谱反演系统对毫秒脉冲激光辐照单晶硅的温度进行测量。分析温度演化过程,研究毫秒脉冲激光对单晶硅热损伤全过程的温度状态和对应的损伤结构形态。研究表明:脉冲宽度固定时,激光诱导的单晶硅的峰值温度随能量密度的增加而增加;当脉冲宽度在1.5~3.0 ms之间时,温度随脉冲宽度的增加而降减小。温度上升曲线在熔点(1 687 K)附近时出现拐点,反射系数由0.33增加为0.72。在气化和凝固阶段,出现气化和固化平台期。单晶硅热致解理损伤先于热致熔蚀损伤,在低能量密度激光作用条件下,应力损伤占主导地位,而在大能量密度条件下,热损伤效应占主导地位。损伤深度与能量密度成正比,随脉冲个数增加迅速增加。     

Method of analyzing silicon groove damage using QSS‐PC,PL imaging,silicon etch rate,and visual microscopy for solar cell fabrication

This work uses a variety of tools to investigate damage caused by laser and dicing saw grooving in silicon. The tools comprise quasi steady state photoconductance decay, photoluminescence imaging, measurement of silicon etch rate in anisotropic etch solution, and visual microscopy. Shallow grooves were formed using a 532 nm Q‐switched Nd:YLF frequency doubled solid state laser and a high speed spindle dicing saw. Combined analysis of the characterization tools enabled determination of the damage radius of the grooves within the bulk of the wafer, the radius of damage in the dielectric layer laterally along the surface of the wafer, as well as the groove etching requirements to fully recover the minority carrier lifetime in the vicinity of the groove. Copyright © 2011 John Wiley & Sons, Ltd.     

Optimization of picosecond laser structuring for the monolithic serial interconnection of CIS solar cells

We report on the optimization of selective picosecond laser structuring for the monolithic serial interconnection of (Cu(In,Ga)(S,Se)₂) CIS thin film solar cells. We introduce a quantitative value to compare the energy efficiency of the different investigated laser processes, the specific ablation energy, which indicates the required energy to remove a certain volume of the specific material. We have examined the structuring efficiencies for induced laser ablation processes for a modification of the beam profile (elliptical and flat‐top beam shaping) and for the application of different laser wavelengths (1064 and 532 nm). Application of induced laser processes (often referred as “lift‐off”) decreases the specific ablation energy dramatically by nearly one order of magnitude. Modifications of the beam profile such as elliptical and flat‐top beam shaping are nearly halving the energy per ablated volume relative to a circular beam. The application of a laser wavelength 532 nm decreases the specific ablation energy compared with 1064 nm significantly for processes involving the CIS layer. We finally demonstrate that with a picosecond laser power of only 2 W, the molybdenum back contact (P1, glass side) and the ZnO front contact (P3, ZnO on CIS) can be structured with a process speed of up to 4 m/s. About 2 µm thick CIS layer (P2) is structured by standard direct laser ablation at higher energy densities with 200 mm/s. Copyright © 2012 John Wiley & Sons, Ltd.