Coherence switching in a four-level system: quantum switching

Dark resonance switching among three-laser interactions in a four-level system is observed by using an enhanced nondegenerate four-wave mixing technique. This coherence switching mechanism is based on simultaneous suppression and enhancement of two-photon absorption and has a novel application to high-speed optical switches.     

两步式放电改善反向开关晶体管开通特性研究

针对大功率半导体开关反向开关晶体管(RSD)由于预充不足造成的非均匀开通缺陷, 在直接预充放电工作电路的基础上, 设计了一种两步式放电工作电路. 根据RSD结构特点理论分析了正常开通所需条件, 并对器件元胞结构进行建模分析, 模型仿真结果表明RSD在窄脉宽预充电流作用下具有更佳的开通性能, 降低了预充阶段基区载流子复合. 两步式放电实验发现第一步放电电流幅值、脉宽对于两步式放电电路的正常工作起决定作用, 而反向预充电流主要作用于RSD第一步放电的正常开通, 降低了预充电路设计难度. 仿真及实验结果均表明两步式放电电路较直接式预充放电电路提高了RSD的均匀开通性能, 这是由于两步式放电显著提高了基区等离子体积累.     

Low-light-level all-optical switching

We propose an all-optical switch that utilizes the technique of storage and retrieval of light pulses. A single photon (probe pulse) switched by another (switching pulse) is feasible, and the on-off ratio can be as large as 10 dB. We have experimentally demonstrated that the energy of the retrieved probe pulse is reduced to about 10% because of the presence of a switching pulse with an energy per unit area of one photon per lambda(2)/(2pi). The achieved result does not depend on the coupling intensity, the atomic optical density, or the width and shape of the switching pulse.     

Relaxing-precessional magnetization switching

A new way of magnetization switching employing both the spin-transfer torque and the torque by a magnetic field is proposed. The solution of the Landau–Lifshitz–Gilbert equation shows that the dynamics of the magnetization in the initial stage of the switching is similar to that in the precessional switching, while that in the final stage is rather similar to the relaxing switching. We call the present method the relaxing-precessional switching. It offers a faster and lower-power-consuming way of switching than the relaxing switching and a more controllable way than the precessional switching.     

All-optical waveguide switching

We present a tutorial review of all-optical switching in fibre and integrated optics waveguides. These switching devices require non-linear refractive index changes in single or coupled waveguides, and involve either the low-power guided modes of the structure or soliton-type waves guided, emitted or captured by waveguides. We discuss the physical principles involved in these all-optical switching schemes, material requirements, recent experiments and limitations. A representative rather than comprehensive list of references is provided.An invited paper     

Spin-induced angular momentum switching

When light is transmitted through optically inhomogeneous and anisotropic media the spatial distribution of light can be modified according to its input polarization state. A complete analysis of this process, based on the paraxial approximation, is presented, and we show how it can be exploited to produce a spin-controlled change in the orbital angular momentum of light beams propagating in patterned space-variant optical axis phase plates. We also unveil a new effect: the development of a strong modulation in the angular momentum change upon variation of the optical path through the phase plates.     

Quantum cryptography without switching

We propose a new coherent state quantum key distribution protocol that eliminates the need to randomly switch between measurement bases. This protocol provides significantly higher secret key rates with increased bandwidths than previous schemes that only make single quadrature measurements. It also offers the further advantage of simplicity compared to all previous protocols which, to date, have relied on switching.     

Nonlinear optical switching matrix

We show that nonlinear directional couplers with variable coupling coefficients can be used to compose a special kind of switching matrix. The switching matrix can be controlled by the signal itself or by a strong pump. Light routing is realized by adjustment of the power of the signal or the pump. Because light routing is based on the optical Kerr effect, ultrafast routing is possible.     

Molecular switching on surfaces

Molecular switching has established itself as a key functionality of building blocks developed for addressable materials and surfaces over the last two decades. Many challenges in their use and characterisation have been presented by the wide variation in interfaces studied, these ranging from truly single-molecule devices to two-dimensional self-assembled monolayers and thin films that bridge the gap between surface and macroscopically bulk materials (polymers, MOFs, COFs), and further still to other interfaces (solid–liquid, liquid–air, etc.). The low number density of molecules on monolayer-coated interfaces as well as in thin films, for example, presents substantial challenges in the characterisation of the composition of modified interfaces. The switching of molecular structure with external stimuli such as light and electrode potential adds a further layer of complexity in the characterisation of function. Such characterisation “in action” is necessary to correlate macroscopic phenomena with changes in molecular structure. In this review, key classes of molecular switches that have been applied frequently to interfaces will be discussed in the context of the techniques and approaches used for their operando characterisation. In particular, we will address issues surrounding the non-innocence of otherwise information-rich techniques and show how model – non-switching – compounds are often helpful in confirming and understanding the limitations and quirks of specific techniques.     

Studies on electrical switching behavior of As-Te-Tl glasses – effect of local structure on switching type and composition dependence of switching voltages

Bulk As-Te-Tl glasses belonging to the As₃₀Te_70-xTl_x (4≤x≤22) and As₄₀Te_60-xTl_x (5≤x≤20) composition tie lines are studied for their I–V characteristics. Unlike other As-Te-III glasses such as As-Te-Al and As-Te-In, which exhibit threshold behavior, the present samples show memory switching. The composition dependence of switching voltages (V_t) of As-Te-Tl glasses is also different from that of As-Te-Al and As-Te-In glasses, and it is found that V_t decreases with the addition of Tl. Both the type of switching exhibited by As-Te-Tl glasses and the composition dependence of V_t, seems to be intimately connected with the nature of bonding of Tl atoms and the resultant structural network. Furthermore, the temperature and thickness dependence of switching voltages of As-Te-Tl glasses suggest an electro thermal mechanism for switching in these samples. PACS 71.55.Jv; 61.43Fs; 61.43.-j; 72.80.Ey; 73.61.Jc     

Polarization switching kinetics in ferroelectrics

The switching kinetics in ferroelectrics in the bulk polarization switching stage and in the final stage of the process are studied. Consideration is given to the specific case of switching of intrinsic ferroelectrics with 180° domains. A complete system of equations describing the switching processes and taking into account the change in repolarization in the course of a phase transformation is derived. The solution of this system is found. All the main characteristics of the switching process are calculated; namely, the evolution of the domain size distribution function is revealed and the time dependences of the domain density and flux are determined. An expression describing the variation in repolarization with time is obtained. The mechanisms of domain growth are studied. An equation for calculating the switching current and its variation with time is derived. A method is proposed for determining a number of constants for ferroelectric crystals by studying the switching current evolution.     

Micromagnetic investigation of all-optical switching

This Letter investigates all-optical magnetization switching from micromagnetic perspective. The influence of circularly polarized light on a magnetic sample was considered to be both directly through the inverse Faraday effect and indirectly aided by thermal induced effects by the laser beam. Dependence of all-optical switching on pulse duration, laser intensity and the magneto-optical susceptibility strength is studied. An important aspect of this investigation is the analysis of how the cooling process influences the successive switches, especially through limiting the successive writing time.     

Ultrafast switching of photonic entanglement

To deploy and operate a quantum network which utilizes existing telecommunications infrastructure, it is necessary to be able to route entangled photons at high speeds, with minimal loss and signal-band noise, and--most importantly--without disturbing the photons' quantum state. Here we present a switch which fulfills these requirements and characterize its performance at the single photon level. Furthermore, because this type of switch couples the temporal and spatial degrees of freedom, it provides an important new tool with which to encode multiple-qubit states in a single photon. As a proof-of-principle demonstration of this capability, we demultiplex a single quantum channel from a dual-channel, time-division-multiplexed entangled photon stream, effectively performing a controlled-bit-flip on a two-qubit subspace of a five-qubit, two-photon state.     

Soliton switching in nonlinear couplers

We present a theoretical overview of soliton switching phenomena in two-mode nonlinear couplers. By complementing numerical studies with perturbative or exact solitary wave solutions, one finds that nonlinear Schrödinger or sine-Gordon solitons tend to maintain their identity in the coupled systems. Moreover, the coupling itself may originate novel vector solitary waves, such as gap solitons in periodic media. The switching dynamics in the presence of dissipative perturbations such as linear gain or intrapulse Raman scattering is also discussed.     

Conduction switching of photochromic molecules

We report a theoretical study of single molecule conduction switching of photochromic dithienylethene molecules. The light-induced intramolecular transformation drives a swapping of the highest occupied molecular orbital and lowest unoccupied molecular orbital between two distinct conjugated paths. The shuffling of single and double bonds produces a significant conductance change when the molecule is sandwiched between metal electrodes. We model the switching event using quantum molecular dynamics and the conductance changes using Green's function electronic transport theory. We find large on-off conductance ratios (between 10 and over 100) depending on the side group outside the switching core.     

Correlated randomness and switching phenomena

One challenge of biology, medicine, and economics is that the systems treated by these serious scientific disciplines have no perfect metronome in time and no perfect spatial architecture—crystalline or otherwise. Nonetheless, as if by magic, out of nothing but randomness one finds remarkably fine-tuned processes in time and remarkably fine-tuned structures in space. Further, many of these processes and structures have the remarkable feature of “switching” from one behavior to another as if by magic. The past century has, philosophically, been concerned with placing aside the human tendency to see the universe as a fine-tuned machine. Here we will address the challenge of uncovering how, through randomness (albeit, as we shall see, strongly correlated randomness), one can arrive at some of the many spatial and temporal patterns in biology, medicine, and economics and even begin to characterize the switching phenomena that enables a system to pass from one state to another. Inspired by principles developed by A. Nihat Berker and scores of other statistical physicists in recent years, we discuss some applications of correlated randomness to understand switching phenomena in various fields. Specifically, we present evidence from experiments and from computer simulations supporting the hypothesis that water’s anomalies are related to a switching point (which is not unlike the “tipping point” immortalized by Malcolm Gladwell), and that the bubbles in economic phenomena that occur on all scales are not “outliers” (another Gladwell immortalization). Though more speculative, we support the idea of disease as arising from some kind of yet-to-be-understood complex switching phenomenon, by discussing data on selected examples, including heart disease and Alzheimer disease.     

Ultrafast photonic crystal optical switching

Photonic crystal, a novel and artificial photonic material with periodic dielectric distribution, possesses photonic bandgap and can control the propagation states of photons. Photonic crystal has been considered to be a promising candidate for the future integrated photonic devices. The properties and the fabrication method of photonic crystal are expounded. The progresses of the study of ultrafast photonic crystal optical switching are discussed in detail.     

Resistance switching memories are memristors

All 2-terminal non-volatile memory devices based on resistance switching are memristors, regardless of the device material and physical operating mechanisms. They all exhibit a distinctive “fingerprint” characterized by a pinched hysteresis loop confined to the first and the third quadrants of the v–i plane whose contour shape in general changes with both the amplitude and frequency of any periodic “sine-wave-like” input voltage source, or current source. In particular, the pinched hysteresis loop shrinks and tends to a straight line as frequency increases. Though numerous examples of voltage vs. current pinched hysteresis loops have been published in many unrelated fields, such as biology, chemistry, physics, etc., and observed from many unrelated phenomena, such as gas discharge arcs, mercury lamps, power conversion devices, earthquake conductance variations, etc., we restrict our examples in this tutorial to solid-state and/or nano devices where copious examples of published pinched hysteresis loops abound. In particular, we sampled arbitrarily, one example from each year between the years 2000 and 2010, to demonstrate that the memristor is a device that does not depend on any particular material, or physical mechanism. For example, we have shown that spin-transfer magnetic tunnel junctions are examples of memristors. We have also demonstrated that both bipolar and unipolar resistance switching devices are memristors.