Effect of oxidation on the electrical properties of granular copper nanostructures

The structural and electrical properties of thin granular metal films obtained by laser electrodispersion were studied. Such structures, which consist of amorphous copper grains 5 nm in size, were established to be extremely stable against oxidation. For instance, when oxidized in air, copper grains were covered by Cu₂O oxide shells about 1 nm thick after a period of a few days, after which further growth of the oxide in thickness stopped. The oxidized close-packed structures conduct current through intergrain tunneling electron transitions, whereas in partially oxidized structures the conduction involves tunneling electron hopping between conducting ensembles made up of several nanoparticles. It was shown that the size of the nanoparticles and of the conducting ensembles can be found by analyzing the temperature dependence of the conductivity and, independently, from the I–V characteristics of the films.     

Significant Fowler–Nordheim tunneling across ZnO – Nanorod based nanojunctions for nanoelectronic device applications

We demonstrate significant Fowler–Nordheim (FN) tunneling across Al/Al₂O₃/ZnO metal–insulator–semiconductor (MIS) and Ag/ZnO metal–semiconductor (MS) nanojunctions. The transport properties of ZnO nanostructures in the form of urchins and randomly distributed nanorods were investigated in terms of various conduction mechanism. The minimum voltage necessary for triggering Fowler–Nordheim (FN) tunneling, under forward biasing, was ～1.2 V and ～3.4 V; respectively, below which only direct tunneling and thermionic emission events were evident. Mediated through Al₂O₃ layer, the FN tunneling was more prominent across MIS junction than MS one. The weak FN tunneling across MS junction was owing to interfacial charge transfer process through the atomic scale gapping between adjacent nanostructures. The extent of such type of tunneling is found to be nanostructure morphology dependent and largely rely on the free electrons donated by the native donor defects in the crystal structure of ZnO. The significant FN tunneling across the MIS and MS junctions has a direct relevance in designing nanoscale field emission devices/components working at low voltage with high throughputs.     

Effects of rough interface on impedance of solid LiPON in MIM cells

The influences of the rough interface on the impedance of solid lithium phosphorus oxynitride (LiPON) in its metal/insulator/metal (MIM) cells over a wide frequency are studied. Using magnetron sputtering method, Al/LiPON/Al cells with different rough interfaces are fabricated. With increasing the Al films electrode roughness, the deposited LiPON films on these electrodes are correspondingly roughened, which result the interface in MIM cell roughened. Rough LiPON films make their ionic resistance decreasing and the real contact area and the bulk capacitance of MIM cells increasing. These lead to the ionic conductivity of LiPON films improved from 1.09 to 2.70 μS/cm. Meanwhile, the bulk capacitance and the electrolyte resistance in MIM cells could be separated by changing the interface roughness. Rough interfaces in MIM cells contribute to the differences in the morphology of LiPON thin films, which result in the decrease of the activation energy of ionic conductivity E _g from 0.45 to 0.38 eV. Without changing LiPON components ratio and sputtering conditions for the thin films deposition, or using any heat treatment, we demonstrate an effective way to improve the ionic conductivity by increasing the roughness of the contact electrode in MIM cells, corresponding roughening the LiPON films and decreasing its ionic impedance.     

Negative differential resistance of a metal–insulator–metal device with gold nanoparticles embedded in polydimethylsiloxane

Metal–insulator–metal (MIM) devices play an important role in information storage cells. In this research, a MIM with an insulator made from polydimethylsiloxane blended with gold nanoparticles has been investigated. The current–voltage characteristic demonstrates a negative differential resistance (NDR) and memory effect. This article attempts to explain the NDR and memory effect, using the charge trapping and releasing mechanisms of the gold nanoparticles and also electron tunneling mechanisms.     

Conductivity of granular metallic films

The electrical resistivity of granular metallic films with a granule size R ～ 10–50 Å decomposes into two factors. One of them depends only on the ratio (T ₀(x)/T) and varies in a range of six to seven orders of magnitude. The second factor depends on the volume concentration of metallic granules x and the concentration of the solution of isolated metal atoms in their oxide and varies in a range of five to six orders of magnitude. Expressions for both factors have been obtained. The conductivity of the granular films is related to tunneling between neighboring granules. The tunneling probability depends substantially on the concentration of the solution of isolated metal atoms in the oxide.     

Representation of type I heterostructure junctionless tunnel field effect transistor for high-performance logic application

In this paper, a gate-all-around junctionless tunnel field effect transistor (JLTFET) based on heterostructure of compound and group III–V semiconductors is introduced and simulated. In order to blend the high tunneling efficiency of narrow band gap material JLTFETs and the high electron mobility of III–V JLTFETs, a type I heterostructure junctionless TFET adopting Ge–Al _x Ga_1?x As–Ge system has been optimized by numerical simulation in terms of aluminum (Al) composition. To improve device performance, we considered a nanowire structure, and it was illustrated that high-performance logic technology can be achieved by the proposed device. The optimal Al composition founded to be around 20 % (x = 0.2). The numerical simulation results demonstrate that the proposed device has low leakage current I _OFF of ~1.9 × 10^?17, I _ON of 4 µA/µm, I _ON/I _OFF current ratio of 1.7 × 10¹¹ and subthreshold swing SS of 12.6 mV/decade at the 40 nm gate length and temperature of 300 K.     

Field-effect transistor structures on the basis of poly(3-hexylthiophene), fullerene derivatives [60]PCBM, [70]PCBM,and nickel nanoparticles

Organic field-effect transistor (OFET) structures with the active layers on the basis of composite films of semiconductor polymer poly(3-hexylthiophene) (P3HT), fullerene derivatives [60]PCBM, [70]PCBM, and nickel (Ni) nanoparticles are obtained, and their optical, electrical, and photoelectrical properties are studied. It is shown that introducing Ni nanoparticles into P3HT: [60]PCBM and P3HT: [70]PCBM films leads to an increase in the absorption and to quenching of photoluminescence of the composite in the 400–600 nm spectral band due to the plasmon effect. In P3HT: [60]PCBM: Ni and P3HT: [70]PCBM: Ni OFET structures at the P3HT: [60]PCBM and P3HT: [70]PCBM concentrations of ~1: 1 and Ni concentrations of ~3–5 wt %, current–voltage (I–V) characteristics typical of ambipolar OFETs with the dominant hole conduction are observed. The charge-carrier (hole) mobilities calculated from the I–V characteristic at V_G =–10 V were found to be ~0.46 cm²/(V s) for P3HT: [60]PCBM: Ni and ~4.7 cm²/(V s) for P3HT: [70]PCBM: Ni, which means that the mobility increases if [60]PCBM in the composition is replaced with [70]PCBM. The effect of light on the I–V characteristics of P3HT: [60]PCBM: Ni and P3HT: [70]PCBM: Ni OFETs is studied.     

Finite size and surface effects on the magnetic properties of cobalt ferrite nanoparticles

Cobalt ferrite, CoFe₂O₄, nanoparticles in the size range 2–15 nm have been prepared using a non-aqueous solvothermal method. The magnetic studies indicate a superparamagnetic behavior, showing an increase in the blocking temperatures (ranging from 215 to more than 340 K) with the particle size, D _TEM. Fitting M versus H isotherms to the saturation approach law, the anisotropy constant, K, and the saturation magnetization, M _S, are obtained. For all the samples, it is observed that decreasing the temperature gives rise to an increase in both magnetic properties. These increases are enhanced at low temperatures (below ~160 K) and they are related to surface effects (disordered magnetic moments at the surface). The fit of the saturation magnetization to the T ² law gives larger values of the Bloch constant than expected for the bulk, increasing with decreasing the particle size (larger specific surface area). The saturation magnetization shows a linear dependence with the reciprocal particle size, 1/D _TEM, and a thickness of 3.7 to 5.1 Å was obtained for the non-magnetic or disordered layer at the surface using the dead layer theory. The hysteresis loops show a complex behavior at low temperatures (T ≤ 160 K), observing a large hysteresis at magnetic fields H > ~1000 Oe compared to smaller ones (H ≤ ~1000 Oe). From the temperature dependence of the ac magnetic susceptibility, it can be concluded that the nanoparticles are in magnetic interaction with large values of the interaction parameter T ₀, as deduced by assuming a Vogel–Fulcher dependence of the superparamagnetic relaxation time. Another evidence of the presence of magnetic interactions is the almost nearly constant value below certain temperatures, lower than the blocking temperature T _b, observed in the FC magnetization curves.     

Structure and catalytic properties of MoSe<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> thin films containing Mo nanoparticles in electrochemical production of hydrogen in solution

The introduction of molybdenum nanoparticles in MoSe _x thin films formed by pulsed laser deposition led to changes in the film structure. The base planes of the layered atomic packing of the MoSe _х matrix around Mo nanoparticles rotated; as a consequence, the edge sites that formed during the “breaking” of the Se–Mo–Se layered atomic packing came out to the film surface. At high nanoparticle concentrations, this effect led to high density of edge sites possessing increased catalytic activity (compared with that of the base planes) for initiating the electrochemical evolution of hydrogen in a 0.5 M H₂SO₄ solution. Voltammetric measurements at room temperature showed that when the carbon cathode was coated with MoSe _x thin films under optimum conditions, the hydrogen overvoltage considerably decreased, and the cathodic current increased. The results indicate that developments in the field of preparation of nanostructured electrodes based on layered transition metal dichalcogenides show promise as an alternative to expensive electrodes based on platinum group metals for electrocatalysts of hydrogen evolution.     

Tunable plasmonic filter with circular metal–insulator– metal ring resonator containing double narrow gaps

Tunable filter based on two metal–insulator–metal (MIM) waveguides coupled to each other by a ring resonator with double narrow gaps is designed and numerically investigated by finite-difference time-domain (FDTD) simulations. The propagating modes of surface plasmon polaritons (SPPs) are studied. By introducing narrow gaps in ring resonators, the transmission in different resonance modes can be effectively adjusted by changing the gap width (g), and the transmitted peak wavelength has a nonlinear relationship with g. Another structure consisting two cascading ring resonators and regular MIM waveguide have also been proposed. The mechanism based on circular ring resonators with narrow gaps may provide a novel method for designing all-optical integrated components in optical communication and computing.     

Scanning tunneling microscopy observation of ultrathin epitaxial CoSi<Subscript>2</Subscript>(111) films grown at a high temperature

Scanning tunneling microscopy (STM) is used to study the basic laws of growth of ultrathin epitaxial CoSi₂(111) films with Co coverages up to 4 ML formed upon sequential deposition of Co and Si atoms taken in a stoichiometric ratio onto the Co–Si(111) surface at room temperature and subsequent annealing at 600–700°C. When the coverage of Co atoms is lower than ~2.7 ML, flat CoSi₂ islands up to ~3 nm high with surface structure 2 × 2 or 1 × 1 grow. It is shown that continuous epitaxial CoSi₂ films containing 3–4 triple Si–Co–Si layers grow provided precise control of deposition. CoSi₂ films can contain inclusions of the local regions with (2 × 1)Si reconstruction. At a temperature above 700°C, a multilevel CoSi₂ film with pinholes grows because of vertical growth caused by the difference between the free energies of the CoSi₂(111) and Si(111) surfaces. According to theoretical calculations, structures of A or B type with a coordination number of 8 of Co atoms are most favorable for the CoSi₂(111)2 × 2 interface.     

Surface structural,morphological, and catalytic studies of homogeneously dispersed anisotropic Ag nanostructures within mesoporous silica

Highly dispersed anisotropic Ag nanostructures were synthesized within the channels of 3-aminopropyltrimethoxysilane (APTMS)-modified mesoporous SBA-15 for catalyzing the reduction of p-dinitrobenzene, p-nitrophenol, and p-nitroacetophenone, respectively. A green templating process without involving any reducing agent, by varying the amount (1–10 wt.%) of Ag loading followed by calcination at 350 °C under H₂ led to change in the morphology of Ag nanoparticles from nanospheres (~7–8 nm) to nanorods (aspect ratio ~12–30 nm) without any deformation in mesoporous sieves. In comparison to white bare SBA-15, gray-colored samples were formed with Ag impregnation exhibiting absorption bands at 484 and 840 nm indicating the formation of anisotropic Ag nanostructures within mesoporous matrix. TEM and FE-SEM micrographs confirmed the presence of evenly dispersed Ag nanostructures within as well as on the surface of mesoporous matrix. AFM studies indicated a small decrease in the average roughness of SBA-15 from 20.59 to 19.21 nm for 4 wt.% Ag/m-SBA-15, illustrating the encapsulation of majority of Ag nanoparticles in the siliceous matrix and presence of small amount of Ag nanoparticles on the mesoporous support. Moreover, due to plugging of mesopores with Ag, a significant decrease in surface area from 680 m²/g of SBA-15 to 385 m²/g was observed. The Ag-impregnated SBA-15 catalyst displayed superior catalytic activity than did bare SBA-15 with 4 wt.% Ag-loaded catalyst exhibiting optimum activity for selective reduction of p-nitrophenol to p-aminophenol (100 %), p-nitroacetophenone to p-aminoacetophenone (100 %), and p-dinitrobenzene to p-nitroaniline (87 %), with a small amount of p-phenylenediamine formation.

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Graphical abstract This paper demonstrates the spontaneous formation of uniformly dispersed Ag nanospecies of various morphologies (nanospheres, size ~7–8 nm and nanorods, aspect ratio ~12–30 nm), both within as well as on the surface of the mesoporous SBA-15, as a function of increased Ag loading. Surface structural and other physiochemical properties of Ag/m-SBA-15 nanocomposites were considerably influenced w.r.t change in Ag loading. Ag/m-SBA-15 nanocomposites with 4 wt.% Ag loading exhibited the highest selectivity (87 %) for the selective reduction of p-dinitrobenzene to p-nitroaniline and 100 % selectivity for p-nitrophenol to p-aminophenol and p-nitroacetophenone to p-aminoacetophenone, respectively.

     

Effective decrease in the exchange energy in <Emphasis Type="Italic">S</Emphasis>-(<Emphasis Type="Italic">FN</Emphasis>)-<Emphasis Type="Italic">S</Emphasis> Josephson structures

The critical current I _c of S-(FN)-S Josephson structures has been calculated as a function of the distance L between superconducting (S) electrodes using the Usadel quasiclassical equations for the case of specifying the supercurrent in the direction parallel to the interface between the ferromagnetic (F) and normal (N) films of the composite weak-link region. It has been shown that, owing to the interaction between F and N films, both the typical decrease scale I _c(L) and the period of the critical current oscillations can be much larger than the respective quantities for the SFS junctions. The conditions have been determined under which these lengths are on the order of the effective depth ζ_N of superconductivity penetration to a normal metal.     

Analysis of the electrical properties of p–n GaAs homojunction under dc and ac fields

In this work, the n-type GaAs films were grown on p-type GaAs single crystalline substrate by metal organic chemical vapor deposition (MOCVD). The temperature dependence of the current density–voltage (J–V) characteristics of n-GaAs/p-GaAs homojunction contacts were measured in the temperature range 293–413 K. These characteristics showed a rectifying behavior consistent with a potential barrier formed at the interface. The forward current density–voltage characteristics under low voltage biasing were explained on the basis of thermionic emission mechanism. The high values of ideality factor (n) may be ascribed to the presence of an interfacial layer. Analysis of the experimental data under the reverse voltage biasing suggests a dominant mechanism was found to be a Schottky effect. The impedance properties and the alternating current (ac) conductivity of n-GaAs/p-GaAs homojunction were investigated as a function of frequency and temperature. The ac conductivity was found to obey the universal power law. The variation of the exponent s with the temperature suggested that the conduction mechanism is an overlapping large-polaron tunneling (OLPT) model associated with correlated barrier hopping (CBH) model at the higher temperature.     

Structure and phase composition of thin a-C:H films modified by Ag and Ti

The structure and phase composition of thin a-C:H and a-C:H〈M〉 films (M = Ag, Ti, or Ag + Ti) have been studied by Raman and X-ray photoelectron spectroscopy. The a-C:H〈M〉 films were prepared by ion-plasma magnetron sputtering of a combined target of graphite and metal in an Ar–CH₄ gas mixture. The Raman spectra of these films indicate that their structure is amorphous. The a-C:H〈Ag + Ti〉 films have a more graphitized structure in comparison with pure a-C:H films and films containing only one metal. It is established that carbon in the a-C:H〈Ag + Ti〉 films is in the sp ², sp ³, and C=O states, which are characteristic of the a-C:H, a-C:H〈Ag〉, and a-C:H〈Ti〉 films. In addition, there are also ether (–C–O–C–) or epoxy (?C?O–) carbon groups in the a-C:H〈Ag + Ti〉 films. It has been revealed that silver atoms in the a-C:H〈Ag〉 and a-C:H〈Ag + Ti〉 films form no chemical bonds with carbon, oxygen, and titanium. Titanium in the a-C:H〈Ti〉 and a-C:H〈Ag + Ti〉 films exists in the form of titanium IV oxide (TiO₂).     

Low-bias visible photodetection realized by graphite nanostructures grown on silicon nanoporous pillar array

A graphite nanostructure (nano-graphite) with the morphology of nanoparticles and nanowires which are composed of graphite nanocrystallites (nc-graphite) was grown on silicon nanoporous pillar array (Si-NPA) by a simple chemical vapor deposition method. The structural characterizations disclosed a complex interface configuration made of nc-graphite, nc-Ni (pre-deposited on Si-NPA as catalyst for nc-graphite growth), nc-NiO₂, and nc-Si. The designed nano-graphite/Si-NPA exhibits strong light absorption and sensitive photoresponsivity under low-bias potential in the visible region of 400–800 nm. For example, it shows a switching ratio of 75, a photoresponsivity of ~?0.16 AW^?1 and a rise/fall time of 12.24/5.66 s with an ultralow bias of 0.1 mV under the visible illumination of 5 mWcm^?2. The high switching ratio and responsivity were ascribed to the complexity of the interface nanostructures and the formation of a thick and compact graphite nanofilm. The results illustrate that nano-graphite/Si-NPA might be a promising candidate material for fabricating high-performance low-power Si-based visible photodetectors.     

Tunneling conductance study of a metal-superconductor junction in the presence of Rashba spin orbit coupling

The tunneling conductance for a junction device consisting of a normal metal and a singlet superconductor is studied with Rashba spin orbit coupling (RSOC) being present in the metallic lead and the interface separating the two regions via an extended Blonder-Tinkham-Klapwijk (BTK) formalism. Interesting interplay between the RSOC and a number of parameters that have experimental significance, and characterize either the junction or the superconducting leads, such as the barrier transparency, quasiparticle lifetime, Fermi wavevector mismatch, an in-plane magnetic field and their effects on the tunneling conductance are investigated in details for both a s-wave and a d-wave superconductor. In an opaque barrier, in presence of a quasiparticle lifetime, a Fermi wavevector mismatch or an external in-plane magnetic field, RSOC enhances the conductance corresponding to low biasing energies, that is, at energies lesser than the superconducting gap, while the reverse is noted for energies exceeding the magnitude of the gap. Further, there are exciting anomalies noted in the conductance spectrum for the d-wave gap which can be understood by incorporating the interplay between the superconducting gap and the angle of incident of the charge carriers.     

Permittivity enhancement of transparent poly(vinylidene fluoride) nanocomposite films by loading titania-coated barium titanate nanoparticles

Barium titanate (BT) nanoparticles are coated by titania and modified by fluoroalkylsilane. The BT nanoparticles are incorporated into polyvinylidene fluoride (PVDF) films to obtain highly dielectric and transparent nanocomposite films at low filler loadings. Incorporation of BT nanoparticles having average sizes of 12 and 22 nm is performed. Incorporation of BT nanoparticles enhances the permittivity of PVDF films. Higher transparency of nanocomposite films is achieved by incorporating 12-nm nanoparticles compared to that by 22-nm nanoparticles. The polarisation mechanism in the nanocomposite films is examined using the Vo–Shi model. The result indicates that even a slight increase in the thickness of titania-coating layer on the BT nanoparticles increase the permittivity of the nanocomposite films. Comparison of the measured and calculated permittivities showed that the incorporation of BT nanoparticles coated with titania provides a practical approach to create transparent nanocomposite films having high permittivity.

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Graphical abstract ?

     

Spectroscopic diagnostics and electric field measurements in the near-cathode region of an atmospheric pressure microplasma jet

Linear Stark splitting of the H\(_{\beta}\) Balmer line components and spatially resolved optical emission spectroscopy (OES) measurements were used to estimate the electric field gradient in the cathode sheath region (~70 μm long) of an atmospheric pressure direct current argonflow-stabilized microplasma jet. Also, plasma parameters in the negative glow region were investigated by both OES and electrical diagnostics. The microplasma jet was operated for current ranging from 10 to 110 mA. OH (A² \({\rm\Sigma}^+\), v = 0 \(\to\) X ² \({\rm\Pi}\), v’ = 0) rotational bands at 306.357 nm and also the Ar 603.213 nm line were used to determine the gas temperature, which ranges from 600 to 1000 K. Electron number density, ranging from4.1 × 10¹⁴ to 8.5 × 10¹⁴ cm^-3, was determined through analysis of the H\(_{\beta}\) line.Electron excitation temperature was also measured from the ratio of two Mo lines (8500–18?000 K) and from Boltzmann-plot of Ar 4p–4s and 5p–4s transitions (11?000–13?500 K).