Structure of tetraphenylporphyrinatocobalt(II) low-temperature sublimates

Armenian Institute of Applied Chemistry “ARIAK”, Artsakha Ave., Lane 4, Bld. 5, Erevan, 375005, Armeniya. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 62, No. 6, pp. 62–66, November–December, 1995.     

Oxygen quenching of anthracene luminescence in geminate pairs

Institute of Chemical Kinetics and Combustion, Siberian Branch of the Russian Academy of Sciences, 3, Institutskaya Str., Novosibirsk, 630090, Russia. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 62, No. 2, pp. 47–51, March–April, 1995.     

Exciton luminescence of AgBr1−x Cl x solid solutions

Institute of Solid-State Physics, 8, Kengaraga St., Riga, LV 1063, Latvia. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 62, No. 3, pp. 174–177, May–June, 1995.     

Effect ofγ-radiation on the spectral luminescence characteristics of impure cadmium tungstate crystals

Results of a study of the effect of γ-radiation on the spectral luminescence properties of cadmium tungstate crystals doped with silver, bismuth, and molybdenum cations are presented. Spectral characteristics of the nondnnnoped crystals are briefly described. Absorption and photo and X-ray luminescence spectra of the crystals taken before and after exposure to γ-radiation (5.5·10⁴ Gy) are compared. It is found that the spectral characteristics of the crystals doped with silver, bismuth, and molybdenum cations do not change markedly after the exposure. The relation between the type of impurity-induced defects, individual characteristics of the impurity cations, and the character of the effect of γ-radiation on the spectral luminescence properties of impure crystals is analyzed (preliminarily). Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 1, pp. 55–60, January–February, 1997.     

离子辐照对聚苯乙烯低温导电特性的影响

室温下用3MeV的硅离子对聚苯乙烯(PS)进行辐照,对辐照后的样品在室温至液氮温度范围的导电特性进行了测量.结果表明,当辐照剂量在1×1012cm-2附近,PS的室温电阻发生突变.随着温度的降低,PS电阻增大,在低辐照剂量下,电阻在155K附近急剧增加.对于高辐射剂量样品,在较高的温度下呈现热激活导电,在低温下电子通过隧穿传导.分析认为,PS电阻随温度的变化是由于不同剂量辐照离子在聚合物中形成的对电子传导有贡献的导电中心密度不同.通过拟合样品的渗流临界特性,分析了样品电阻随辐照剂量的变化 关键词： 聚苯乙烯 硅离子辐照 低温导电     

Creation of nanoparticles and luminescence in Al2O3 crystal by Zn ion implantation

Single crystal α-Al₂O₃ wafers were implanted with 45 keV Zn ions up to a fluence of 1×10¹⁷ ions/cm², and were then subjected to furnace annealing in oxygen atmosphere at different temperatures. Various techniques have been applied to study the creation of nanoparticles (NPs), defects and their thermal evolutions, as well as their effects on optical properties of Al₂O₃. Our results clearly show that Zn NPs have been synthesized in the as-implanted sample and they begin to be oxidized at 500 °C. Two broad photoluminescence bands appear in the Zn ion-implanted samples and their intensities depend on the annealing temperatures. The results have been interpreted in view of creation of the defects and NPs, Zn atoms diffusion as well as their thermal evolution during annealing.