Epitaxial Growth of Sr x Ba1 − x Nb2O6 Thin Films Prepared from Sol-Gel Process

In this study, we prepared Sr _x Ba_{1 – x} Nb₂O₆ (x = 0.3, 0.5 and 0.7) thin film on 0.75 wt% La doped SrTiO₃ (100) and (110) single crystal substrates. A homogeneous coating solution was prepared with Sr and Ba acetates and Nb(OEt)₅ as raw materials, and acetic acid and diethlene glycol monomethyl ether as solvents. The substrates were coated with the solution by spin coating method. As-coated thin films were heated from 973 to 1273 K in air. The grains of the thin film on La doped SrTiO₃ (100) were pillar shaped and arranged in right angle to each other. On the other hand, the grains of these thin films on La doped SrTiO₃ were pillar shape and arranged in one direction. The crystallographic relationship of the thin film between Sr _x Ba_{1 – x} Nb₂O₆ and substrate that the 130 and 310 direction of the thin film on the substrate were oriented with c-axis in parallel to the substrate surface. On the other hand, (hk0) phase diffractions of Sr _x Ba_{1 – x} Nb₂O₆ thin film on the substrate (110) were investigated in the XRD theta-2theta measurement. It is expected that the Sr _x Ba_{1 – x} Nb₂O₆ (x = 0.3, 0.5 and 0.7) were highly oriented or epitaxial growing on La doped SrTiO₃ (110) single crystal substrate.     

Preparation of Titanium Oxide Layer on Silica Glass Substrate with Titanium Naphthenate Precursor

Nanocrystalline TiO₂ thin films on silica glass substrates were prepared by using a naphthenic acid precursor. As-deposited thin films were heat treated at 500, 600, 700 and 800^∘C for 30 min in air. The TiO₂ thin films were analyzed by High Resolution X-ray diffraction, ultra violet—visible—near infrared spectrophotometer, field emission—scanning electron microscope and scanning probe microscope. After annealing at 600 and 700^∘C, the XRD patterns consist of only anatase peaks of TiO₂ film. Rutile(110) peak begins to appear at an annealing temperature of 800^∘C. Relative high transmittance at visible range was obtained for all films except the film annealed at 800^∘C. Optical band gap, E_g, is in the range between 3.53 and 3.78 eV except the TiO₂ film annealed at 500^∘C. The best hydrophilicity was achieved with a high-temperature annealing.     

Topotaxial formation of titanium-rich barium titanates during solid state reactions on (110) TiO2 (rutile) and (001) BaTiO3 single crystals

The orientation relationships of Ti-rich barium titanate phases formed by solid state reactions at high temperatures were studied using (110) TiO₂ (rutile) and (001) BaTiO₃ single-crystal substrates. Well-oriented Ba₆Ti₁₇O₄₀ islands were observed after a vapor–solid reaction of a BaO quantity equivalent to a nominal BaO film thickness of 1 nm with the TiO₂ substrate, whereas a thin film consisting of well-oriented BaTiO₃ and Ba₆Ti₁₇O₄₀ grains was formed after vapor–solid reaction of a BaO quantity equivalent to a nominal BaO film thickness of 50 nm with the rutile substrate. A topotaxial orientation relationship between Ba₆Ti₁₇O₄₀ and TiO₂ was found. Topotaxy is facilitated by a certain similarity in the oxygen sublattices of TiO₂ and Ba₆Ti₁₇O₄₀. The mechanism of the reaction occurring between BaO vapor and the TiO₂ surface at high temperature is discussed. On the other hand, several well-oriented Ba₄Ti₁₃O₃₀, Ba₆Ti₁₇O₄₀ and Ba₂Ti₅O₁₂ phases were observed to be embedded in the mainly forming Ba₂TiSi₂O₈ phase after a solid–solid reaction of amorphous SiO₂ thin films with (001) BaTiO₃ substrates at temperatures above 1000 °C. They were formed by a topotaxial reaction involving the transformation of (111) planes of BaTiO₃ into (001) planes of the Ti-rich phases by removal of BaO and insertion of TiO₂. Cross-sections of the interfaces between the substrates and the various reaction products are studied by (high-resolution) transmission electron microscopy.     

Preparation and Characterization of SiO2-MxOy(M = V, Sn, Sb) Thin Films from Silicic Acid and Metal Chlorides

The preparation of SiO₂-M _x O _y (M = V, Sn, Sb) binary oxide thin films by sol-gel method was investigated. The reaction of silicic acid with metal chloride (M = Sn and Sb) or oxychloride (M = V) formed homogeneous solutions. The dip-coating of slide glass and silicon wafer followed by heat treatment gave oxide films having Si—O—M bond. The changes of FT-IR spectra as a function of heat treatment temperature and molar composition confirmed the Si—O—M bonds. The sheet resistance of films increased with an increase on heat treatment temperature and decrease in the content of metal oxide M _x O _y . X-ray diffraction peaks were observed for the SiO₂-V₂O₅ films with high V₂O₅ contents and heat-treated above 250°C, while the others were amorphous. Oxide films heat treated at 500°C had a thickness between 340–470 nm.     

Preparation of polyimide/BaTiO3‐nanocrystal hybrid thin films and their dielectric property

High dielectric constant is highly desirable in capacitors and memory devices. In this work, oleic acid (OA)‐capped BaTiO₃ nanocrystals were synthesized by a two‐phase approach. Polyimide (PI)/BaTiO₃‐nanocrystal composite thin films with high dielectric constant have been successfully fabricated. The morphologies and dielectric properties of the hybrid films were exploited. The results showed that BaTiO₃ nanocrystals can be uniformly dispersed in the PI thin films owing to the surface modification of OA‐capped BaTiO₃ nanocrystals. It was found that the dielectric constant of composite film varies with the volume fraction of BaTiO₃ nanocrystals and sintering temperatures and reaches a maximum value of 44.1, which is around 13 times higher than that of pristine PI thin film (3.2). These results demonstrated that PI/BaTiO₃‐nanocrystal composite films have considerable application potential in microelectronic fields.     

Photosensitive sol–gel preparation and micro-patterning of (100)-oriented (Ba0.7Sr0.3)TiO3 film on LaNiO3 electrode

Using La(NO₃)₃·nH₂O and Ni(CH₃COO)₂·4H₂O as starting materials, the LaNiO₃ sol was prepared with 2-methoxyethanol as solvent. Using this sol, (001)-oriented LNO films with high conductivity were prepared on LaAlO₃ single crystal substrate by sol–gel method. Using barium acetate, strontium acetate, and Ti(OC₄H₉)₄ as starting materials, acetylacetone and lactic acid as chemical modifiers, photosensitive BST sol was obtained. Using the BST sol, a-oriented BST films were prepared on (001)LNO/LAO. Due to the photosensitivity of the BST sol, the coated BST gel film itself can be used as photoresist. Thus, micro-patterned a-oriented BST films are obtained by exposing, leaching, and annealing the BST gel film. The a-oriented BST film capacitor on LNO/LAO has a high dielectric constant, a low dielectric loss and a low leakage current.     

Fabrication and optical conductivities of strained epitaxial NaxCoO2 thin films: x=0.5, 0.7

Epitaxial γ phase-Na_xCoO₂ thin films were deposited on (001) sapphire by the pulsed laser deposition method. To fabricate epitaxial Na_0.5CoO₂ thin films, we used a solution of iodine-dissolved acetonitrile and obtained an epitaxial Na_0.5CoO₂ thin film with a high crystallinity because of Na deintercalation of epitaxial Na_0.7CoO₂. From the spectroscopic ellipsometry analysis, we obtained the optical constants as well as the optical conductivities for the Na_0.5CoO₂ and Na_0.7CoO₂ thin films. The energy splitting between e_g and a_1g increased because of the structural strain of the Na_0.7CoO₂ thin film. It is inferred that the structural strain is the source for the lower resistivity and the preservation of the strongly correlated system up to 200 K for the Na_0.7CoO₂ thin film. On the other hand, the strain in the Na_0.5CoO₂ thin film was not affected, and the charge-ordering state and the Na content (x=0.5) only cause the charge-ordering state.     

Preparation and Properties of Highly Oriented Sr0.3Ba0.7Nb2O6 Thin Films by a Sol-Gel Process

We succeeded in the preparation of epitaxial or highly oriented strontium-barium niobate (Sr_0.3Ba_0.7Nb₂O₆) thin film by a sol-gel process. A homogeneous coating solution was prepared with Sr and Ba acetates and Nb(OEt)₅ as raw materials, and acetic acid and diethylene glycol monomethyl ether as solvents. Sr_0.3Ba_0.7Nb₂O₆ film sintered at 900°C on MgO(1 0 0) was oriented with c-axis perpendicular to the substrate surface. Sr_0.3Ba_0.7Nb₂O₆ film sintered at 700°C on SrTiO₃(1 0 0) was an epitaxial and oriented with c-axis in parallel to the substrate surface. Transmittance of Sr_0.3Ba_0.7Nb₂O₆ film (film thickness: 144 nm) was more than 60% at the range from 400 to 800 nm. Refractive index was 2.33 at 633 nm. Dielectric constant and dielectric loss of the Sr_0.3Ba_0.7Nb₂O₆ thin films prepared on polycrystal Pt substrates were 600 and 0.06 at room temperature and 1 kHz, respectively. The curie temperature (T_c) of polycrystalline Sr_0.3Ba_0.7Nb₂O₆ thin films was about 200°C. At room temperature and 50 kHz, remanent polarization (P_r) and coercive field (E_c) of the polycrystalline thin films were 1.79 C/cm² and 2.69 kV/cm, respectively.     

Substrate dependent structure and in-plane dielectric properties of Ba(Sn0.15Ti0.85)O3 thin films

The structure, microstructure and in-plane dielectric properties of Barium tin titanate Ba(Sn_0.15Ti_0.85)O₃ (BTS) thin films grown on (100) LaAlO₃ (LAO) and (100) MgO single crystal substrates through sol–gel process were investigated. The films deposited on (100) LAO substrate exhibited a strong (100) preferred orientation while the film deposited on (100) MgO substrate showed polycrystalline structure. The in-plane ɛ–T measurements reveal that the films grown on (100) LAO substrate exhibited an obvious room-temperature ferroelectric state, while the film grown on MgO substrate showed paraelectric state in the temperature range of 10–130 °C. A high tunability of 52.11% was observed for the BTS films deposited on (100) LAO substrate at the frequency of 1 MHz with an applied electric field of 80 kV/cm, which is about two times larger than that of the BTS films deposited on (100) MgO substrate. The obvious differences in the dielectric properties could be attributed to the stress in the films, which come from lattice mismatch and difference in the thermal expansion coefficients between the film and substrates. This work clearly reveals the highly promising potential of BTS films for application in tunable devices.     

Chemical solution processing and characterization of Ba(Zr,Ti)O<Subscript>3</Subscript>/LaNiO<Subscript>3</Subscript> layered thin films

Ba(Zr,Ti)O₃/LaNiO₃ layered thin films have been synthesized by chemical solution deposition (CSD) using metal-organic precursor solutions. Ba(Zr,Ti)O₃ thin films with smooth surface morphology and excellent dielectric properties were prepared on Pt/TiO _x /SiO₂/Si substrates by controlling the Zr/Ti ratios in Ba(Zr,Ti)O₃. Chemically derived LaNiO₃ thin films crystallized into the perovskite single phase and their conductivity was sufficiently high as a thin-film electrode. Ba(Zr,Ti)O₃/LaNiO₃ layered thin films of single phase perovskite were fabricated on SiO₂/Si and fused silica substrates. The dielectric constant of a Ba(Zr_0.2Ti_0.8)O₃ thin film prepared at 700°C on a LaNiO₃/fused silica substrate was found to be approximately 830 with a dielectric loss of 5% at 1 kHz and room temperature. Although the Ba(Zr_0.2Ti_0.8)O₃ thin film on the LaNiO₃/fused silica substrate showed a smaller dielectric constant than the Ba(Zr_0.2Ti_0.8)O₃ thin film on Pt/TiO _x /SiO₂/Si, small temperature dependence of dielectric constant was achieved over a wide temperature range. Furthermore, the fabrication of the Ba(Zr,Ti)O₃/LaNiO₃ films in alternate thin layers similar to a multilayer capacitor structure was performed by the same solution deposition process.     

Effect of Europium Ion Concentrations on the Photoluminescence Emission of Nano-Crystalline BaTiO<Subscript>3</Subscript> Prepared by Sol–Gel Technique

Nano-crystalline. ferroelectric Eu³⁺: BaTiO₃ powders and thin films have been prepared using (Ba(Ac)₂), and titanium butoxide (Ti(C₄H₉O)₄), as precursors. The thin films were prepared by spin coating using the sol–gel method. The evolution of the network bonds and the structural characterization of the prepared samples was studied by Fourier Transform Infrared Spectrometer (FTIR) and X-ray diffraction (XRD) techniques, respectively. The as-grown thin films and powders were found to be amorphous, and crystallized to the tetragonal phase after annealing at 750^∘C in air for 30 min. The crystallite size of the doped sample with 4% Eu³⁺ ions in the form of thin film and powder was found to be equal to = 21 and 32 nm, respectively.The photoluminescence of nano-crystalline powders and thin films at 488 nm were reported. The luminescence spectra of ultra fine Eu³⁺: BaTiO₃ powders and thin films are dominated by the ⁵D₀ → ⁷F_j (j = 0−4) transitions, suggesting a strong distortion of the Eu³⁺ sites. The disorder contributes, together with the presence of numerous charge compensation mechanisms, to the strong inhomogeneous broadening of the ⁵D₀ → ⁷F_j luminescence band of the Eu³⁺.     

Growth modes and self-organization in the epitaxy of ferromagnetic SrRuO3 on SrTiO3(001)

We report on the self-organized formation of one-dimensional finger-like structures and the subsequent surface smoothing that occurs in the epitaxial growth of ferromagnetic and conductive SrRuO₃ films on SrTiO₃(001) substrates. We show that at an early stage of growth there are three-dimensional (3D) islands nucleated along the substrate steps, and we detail their coalescence to form fingers and later the coalescence of fingers to form planar surfaces. The influence of the Erlich–Schwoebel barrier on the morphology evolution is demonstrated. We discuss on the driving forces promoting 3D growth at the early stages.     

Comparative study of the structural,optical, and electrical properties of CuAlO<Subscript>2</Subscript> thin films on Al<Subscript>2</Subscript>O<Subscript>3</Subscript> and YSZ substrates via chemical solution deposition

Single-phase delafossite CuAlO₂ thin films are deposited successfully on Al₂O₃ (001) and YSZ (100) substrates using the chemical solution method. X-ray diffraction data present that the CuAlO₂ film on the Al₂O₃ (001) substrate is epitaxial, whereas that on YSZ (100) is c-axis oriented; the same is also demonstrated by the HRTEM images and SAED patterns. Optical transmittance spectra exhibit that both films have high transparency in the visible region. However, in this region, the optical transmittance of the CuAlO₂ thin film deposited on (001) Al₂O₃ is inferior to that deposited on (100) YSZ. This optical anomaly can be attributed to surface scattering. Electrical transport measurements show that the resistivity of the film on (001) Al₂O₃ is one order lower than that on (100) YSZ, suggesting that in-plane orientation is significant in improving hole mobility.     

Fabrication of Sol-Gel Optical Waveguide by Hot-Dip Coating Process

The TiO₂: Sb nanoscale thin films were deposited on glass substrates by the sol–gel dip-coating method. The influence of the dopant density on the structure and the phase transformation of the thin films were investigated by X-ray diffraction (XRD) and Raman spectra. From the results of XRD, the thin films were in a majority of anatase state. The results of Raman spectra indicated that the non-doped TiO₂ thin film composed of not only anatase but also brookite phase. Dopant Sb enhances the transformation of the TiO₂ from brookite to anatase phase. After doping proper amount of Sb, the thin films show more superhydrophilicity than the non-doped TiO₂ thin film as well. The crystal size of the TiO₂ : Sb is about 13.3–20 nm calculated from the XRD patterns.     

Visible Up-Conversion Luminescence in Ho3+: BaTiO3 Nano-Crystals Prepared by Sol Gel Technique

Visible up-conversion emissions at (435, 545, 580, 675 and 690 nm) and (437, 547 575 and 675 nm) have been observed from the sol-gel derived nano-crystalline Ho³⁺: BaTiO₃ powders and thin films respectively, under 808 nm laser diode excitation emissions. Combined with the energy level structure of Ho³⁺ ions and the kinetics of the visible emissions, the up-conversion mechanism has been analyzed and explained. The blue, green and red emissions of both samples has been attributed to the ground state-directed transition from (⁵F₁), (⁵S₂) and (⁵F₅), which are populated through excited state absorption (ESA) for 808 nm excitation. Nano-structure pure barium titanate and doped with different concentrations of Ho³⁺ ions in the from of powder and thin film have been prepared by sol-gel technique, using barium acetate (Ba(Ac)₂), and titanium butoxide (Ti(C₄H₉O)₄), as precursors. The thin films were prepared by sol-gel spin coating method. The as-grown thin films and powders were found to be amorphous, which crystallized to the tetragonal phase after heating at 750°C in air for 30 minutes. The crystallite sizes of the thin film and powder both doped with 4% Ho³⁺ ions was found to be equal to 11 and 16 nm, respectvely.     

Surface chemistry and optical property of TiO2 thin films treated by low-pressure plasma

The low temperature RF plasma treatment was used to control the surface chemistry and optical property of TiO₂ thin films deposited by RF magnetron sputtering with a very good uniformity at 300 °C substrate heating temperature. The XRD pattern indicates the crystalline structure of the film could be associated to amorphous structure of TiO₂ in thin film. The plasma treatment of TiO₂ film can increase the proportion of Ti³⁺ in Ti2p and decrease in carbon atoms as alcohol/ether group in C1s at the surface. The optical transmittance of the film was enhanced by 50% after the plasma treatment. The surface structure and morphology remain the same for untreated and low-pressure plasma-treated films. Therefore, increase in the optical transmission could be due to change in surface chemistry and surface cleaning by plasma treatment.     

Preparation and Optical Properties of Gold-Dispersed BaTiO3, PGO (Pb5Ge3O11) and PLT (Pb1-1.5xLaxTiO3) Thin Films by Sol-Gel Process

Gold-dispersed BaTiO₃, PGO and PLT thin films, which will be used for third-order nonlinear optical devices, were prepared by sol-gel process with spin-coating using HAuCl₄4H₂O, Ba(CH₃COO)₂, Ti[O(CH₂)₃CH₃]₄, Pb(CH₃COO)₂3H₂O, Ge[O-n-C₄H₉]₄, La(CH₃COO)₃1.5 H₂O as starting materials. The thin films were heat-treated in air at temperatures ranging from 400 to 800 for 1 h. The nonlinear optical property of these thin films was measured by the degenerate four-wave mixing (DFWM) method using a frequency-doubled Nd: YAG laser with 20 ps pulse duration. Third-order nonlinear susceptibility χ⁽³⁾ of gold-dispersed BaTiO₃, PGO and PLT thin films with 5 vol% of gold were 1.410⁻⁶ esu, 3.510⁻⁷ esu respectively. The large χ⁽³⁾ may be ascribed to the high dielectric constant of the films.     

Impact of substrate on some physical properties of PrFe0.5Ni0.5O3 thin films

We carried out the structural, morphological and transport study of PrFe_0.5Ni_0.5O₃ thin films prepared by pulsed laser deposition (PLD) over various substrates. Different substrates like LaAlO₃ (001),GaAs(001) and Si(001) were used for deposition to understand effect of lattice mismatch on various physical properties. The film deposited on LaAlO₃ was of best quality with well (001)-oriented and having good crystalline properties. Whereas, film deposited on GaAs(001) is well textured. Both films shows semiconducting behavior and resistance of the film deposited on GaAs(001) shows larger than that of film deposited on LAO. However, film deposited on Si, also shows polycrystalline growth with unusual metallic behavior. We tried to correlate this behavior with strain-induced growth of these films. Other possibilities for this unusual trend is also explored.     

Ba Titanate and Barium/Strontium Titanate Thin Films from Hydroxide Precursors: Preparation and Ferroelectric Behavior

Randomly oriented ferroelectric BaTiO₃ and (Ba_0.6Sr_0.4) TiO₃ thin films on platinum coated Si (100) were prepared by a sol-gel method. The precursor solutions were derived from barium hydroxide or a mixture of barium/strontium hydroxides dissolved in acetic acid and titanium butoxide. Polarization versus applied voltage hysteresis studies indicated a remanent polarization of 3 µC/cm² and a coercive field of 43.4 kV/cm for BaTiO₃ films annealed at 800°C for 1 h. Corresponding parameters for (Ba_0.6Sr_0.4)TiO₃ films annealed at 800°C were found to be 7.2 µC/cm² and 102.7 kV/cm, respectively. Microstructural study of the surface morphology of these films indicated grains of less than 0.1 µm in size. The leakage current for (Ba_0.6Sr_0.4)TiO₃ films was found to be two orders of magnitude lower than that for BaTiO₃ films.     

OTS自组装单层膜诱导定向生长SrTiO3功能陶瓷薄膜

采用自组装单层膜技术,以三氯十八烷基硅烷(octadecyl-trichioro-silane,OTS)为模版,在玻璃基片上成功制备了钛酸锶晶态薄膜.改性基板的亲水性测定与金相显微镜测试表明,紫外光照射使基板由疏水转变为亲水,OTS单分子膜对薄膜的沉积具有诱导作用:X射线衍射(XRD)与扫描电镜(SEM)表征显示,制备成功的钛酸锶薄膜结晶良好,样品表面均匀,在垂直基板表面方向上呈花状生长:EDS能谱测试为钛酸锶薄膜的化学组成提供了有力的证据;同时探讨了白组装单层膜和钛酸锶薄膜的形成机理.