P3HT修饰一维有序壳核式CdS/ZnO纳米棒阵列复合膜的光电化学性能

采用电化学方法在铟锡氧化物(ITO)导电玻璃上制备了高度有序的ZnO纳米棒阵列, 在ZnO纳米棒阵列上先后电化学沉积CdS纳米晶膜及聚3-己基噻吩(P3HT)薄膜得到P3HT修饰的一维有序壳核式CdS/ZnO纳米阵列结构, 并通过扫描电镜(SEM)、透射电镜(TEM)、X射线衍射(XRD)、能量散射X射线(EDX)等表征手段证实了该结构的形成. 以此纳米结构薄膜为光阳极组装新型半导体敏化太阳电池, 研究了CdS纳米晶膜的厚度和P3HT薄膜的沉积对电池光伏性能的影响, 初步探讨了电荷在电池结构中的传输机理, 结果表明, CdS纳米晶膜和P3HT薄膜的沉积有效地拓宽了光阳极的光吸收范围, 实验中电池的光电转换效率最高达到1.08%.     

Synthesis and Electrosurface Properties of One- and Two-Component Nanostructures

One- and two-component (titanium and aluminum oxides) oxide nanostructures are synthesized by molecular layer-by-layer deposition from the gas phase onto silicon oxide and boehmite substrates. Two-component nanostructures are prepared by the consecutive deposition of nanolayers of aluminum and titanium oxides onto a dispersed silica substrate. Electrosurface properties of thus-prepared samples are studied and compared. It is shown that the positions of the isoelectric point and the point of zero charge of a 5TiO₂/5Al₂O₃/SiO₂ composite sample are governed by an outer titanium oxide nanolayer and are similar to those of bulk titanium oxide and a nanostructured film of titanium oxide deposited onto an aluminum hydroxide substrate.__________Translated from Kolloidnyi Zhurnal, Vol. 67, No. 4, 2005, pp. 469–474.Original Russian Text Copyright © 2005 by Bogdanova, Ermakova, Chikhachev, Sidorova, Aleksandrov, Savina.     

Influence of Synthesis Conditions on the Electrokinetic Characteristics of Titanium–Oxygen Nanostructures

Influence of synthesis conditions of titanium–oxygen nanostructures on their electrochemical behavior is studied. The nanostructures were prepared by molecular layer-by-layer deposition from the gaseous phase onto the substrates (silicon oxides titanium oxide, and silicon covered with oxide film). It is found that the deposition of a titanium–oxygen nanolayer onto the titanium oxide does not change the position of isoelectric point and the value of electrokinetic potential. Deposition of the titanium–oxygen nanostructure on the initial, as well as on the thermally and chemically modified silicon and silicon oxide substrates at various temperatures yields samples whose isoelectric points lie between the values for the substrate and deposited titanium oxide.     

八-羟基喹啉铝薄膜光致发光的厚度依赖性质

In situ thickness dependent photoluminescence (PL) measurements of tris(8-hydroxyquinoline) aluminum(Alq3) film were performed. At the beginning of Alq3 deposition on the glass substrate, the Alq3 emission showed a sharp red-shift. Further deposition of Alq3 resulted slight red-shift, and finally tended to saturated value. The total red-shift of about 12 nm was observed for the Alq3 film thickness range from 2 to 500 nm.This red-shift was attributed to the change from the 2D to 3D exciton state with increasing Alq3 film thickness. Meanwhile, the PL intensity of Alq3 emission increased continuously, and showed a rate change at the initial deposition of Alq3 due to non-rediative decay of excitons arised from the interaction between excitons and the substrate, and finally tended to saturation with the Alq3 thickness.     

Electrochemical fabrication of two-dimensional palladium nanostructures as substrates for surface enhanced Raman scattering

Two-dimensional palladium (Pd) nanostructures have been fabricated by electrochemical deposition of Pd onto an indium tin oxide glass substrate modified with a thin flat film of polypyrrole or a nanofibril film of polyaniline. The experimental results demonstrated that the morphology of Pd nanoparticles strongly depended on the properties of conducting polymers and the conditions of electrochemical deposition. Two-dimensional nanostructures composed of flower-like (consisting of staggered nanosheets) or pinecone-like Pd nanoparticles were successfully synthesized. They can be used as substrates for surface-enhanced Raman scattering after partly decomposing the polymer components by heating in air, and the enhancement factor of the substrate composed of flower-like Pd nanoparticles was measured to be as high as 105 for 4-mercaptopyridine.     

A study on electrodeposited of ZnO/ZnS heterostructures

ZnO/ZnS heterostructures were synthesized by a two steps electrochemical deposition method. Firstly, ZnS layer was deposited from an aqueous solution containing Na₂S₂O₃ and ZnSO₄ onto indium-doped tin oxide (ITO) coating glass substrate at two deposition potentials. Then, ZnO nanostructures were deposited from an aqueous solution of Zn(NO₃) onto ZnS surface. The as-obtained samples were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), Raman and UV-visible analysis. The results indicate that the electrodeposition of ZnS layer at ?0.9 V give the best proprieties of ZnO/ZnS heterostructures. Homogeneous and uniform surface of ZnO/ZnS heterostructure was confirmed by AFM images. The XRD patterns indicates a high crystallinity of ZnO/ZnS. A high transmittance of 65% was also noted from UV-Visible spectra and band gap energy as large as 3.6?eV was found.     

Ultrathin silica films immobilized on gold supports: fabrication, characterization, and modification

A novel method for covalent attachment of ultrathin silica films (thickness <10 nm) to gold substrates is reported. Silica layers were prepared using spin-coating of sol-gel precursor solutions onto gold substrates that were cleaned and oxidized using UV photo-oxidation in an ozone atmosphere. The gold oxide layer resulting from this process acts as a wetting control and adhesive agent for the ultrathin silica layer. Control of silica layer thickness between approximately 6 and 60 nm through modification of precursor solution composition or by repetitive deposition is demonstrated. Films were characterized using infrared spectroscopy, ellipsometry, atomic force microscopy, and cyclic voltammetry. For the standard deposition parameters developed here, films were determined to be 5.5 +/- 0.75 nm thick, and were stable in aqueous solutions ranging in pH from 2 to 10 for at least 30 min. Films contained nanoscopic defects with radii of 相似文献   

Phase separation morphology of thin films of polystyrene/polyisoprene blends

We present the results of a study of the morphology of phase separation in a thin film blend of polystyrene (PS) and polyisoprene (PI) in a common solvent of toluene. The blend is quenched by rapid solvent evaporation using a spincoating technique rather than a temperature quench. The mass fraction of polystyrene is varied to determine the effect of the substrate on thin film phase separation morphology. We compare the phase separation morphology for very thin films of the PS/PI blend cast onto three different substrates: Si(001) with a native oxide layer (Si (SINGLEBOND) SiO_x), Si(001) etched in hydrofluoric acid (Si-H), and a Au/Pd alloy sputtered onto Si(001). We observe large differences between the morphologies of 1000 Å thick blend films on the Si(SINGLEBOND) SiO_x and Si-H substrates as the mass fraction is varied due to the difference in the wetting properties of PS on the two substrates. Smaller differences are observed between the films on the Si(SINGLEBOND) SiO_x and Au/Pd substrates only for film thicknesses h < 600 Å. © 1996 John Wiley & Sons, Inc.     

Epitaxy‐like orientation of nanoscale Ag islands grown on air‐oxidized Si(110)‐(5 × 1) surfaces

Growth of Ag islands under ultra‐high vacuum condition on air‐oxidized Si(110)‐(5 × 1) surfaces has been investigated by in situ reflection high energy electron diffraction and ex situ scanning electron microscopy and cross‐sectional transmission electron microscopy. A thin oxide is formed on Si via exposure of the clean Si(110)‐(5 × 1) surface to air. The oxide layer has a short range order. Deposition of Ag at different thicknesses and at different substrate temperatures reveal that the crystalline qualities of the Ag film are almost independent of the thickness of the Ag layer and depend only on the substrate temperature. Ag deposition at room temperature leads to the growth of randomly oriented Ag islands while preferred orientation evolves when Ag is deposited at higher temperatures. For deposition at 550 °C sharp spots in the reflection high energy electron diffraction pattern corresponding to an epitaxial orientation with the underlying Si substrate are observed. The presence of a short range order on the oxidized surface apparently influences the crystallographic orientation of the Ag islands. Copyright © 2011 John Wiley & Sons, Ltd.     

The formation of submonolayer thorium coatings on a silicon oxide surface by electrochemical deposition

Data are reported on the mechanisms of the formation of submonolayer coatings based on thorium oxide on the surface of Si(111) single crystal with natural oxide as a result of electrochemical deposition. It is experimentally shown that the deposition of thorium atoms from an acetone solution of Th(NO₃)₄ onto the surface of natural silicon oxide leads to the formation of defects in the thin silicon oxide layer, which is accompanied by the deposition of thorium nanoclusters onto a pure silicon surface. The observed effects have been qualitatively explained assuming the breakdown of natural silicon oxide due to the presence of an electrical double layer in the near-surface region of the cathode.     

Initial Growth of Functional Plasma Polymer Nanofilms

To gain deeper insights into the initial growth mechanism, with respect to functional group density and cross-linking, plasma polymer films (PPFs) were deposited from C₂H₄/NH₃ discharges. Keeping gas phase processes and electrical discharge conditions constant all over the deposition process, the mass deposition rate of the PPF was found to be initially lower and regularly increasing before reaching steady-state conditions after a film thickness of about 5 nm on metal oxide substrates. The first gradient nano-layer, i.e. the first 5 nm deposited, were observed to possess less amino functional groups and to be more cross-linked and thus more stable compared to the film prepared in steady state conditions, in which the uniform film comprises more amino functional groups, yet is less cross-linked and thus less stable. Due to its sticking probability, the substrate thus influences the initial deposition rate. Over plasma exposure time, the substrate becomes covered by an initial layer of PPF and the film-forming species are no longer deposited onto the pristine substrate but onto the already deposited organic polymer film. The preparation of the highly stable functional nanofilm, i.e. the initial PPF layer, can lead to new possible applications and fast deposition processes.     

Aqueous solution route to high-aspect-ratio zinc oxide nanostructures on indium tin oxide substrates

High-aspect-ratio ZnO nanowires and nanotubes are formed on indium tin oxide (ITO) substrates using a three-step route at low temperatures. The three steps, including successive ionic layer absorption and reaction (SILAR) deposition of the ZnO seed layer, hydrothermal annealing of the seed layer, and chemical bath deposition (CBD) of the one-dimensional (1D) ZnO nanostructures, are all conducted in aqueous solutions at temperatures below 120 degrees C. Both the hydrothermal annealing of the SILAR seed layer and the low-concentration precursor solution employed in the CBD process are crucial in order to synthesize the uniform and high-aspect-ratio ZnO nanostructures on the ITO substrate. TEM analyses reveal that both the nanowire and the nanotube possess the single-crystal structure and are grown along [001] direction. Room-temperature cathodoluminescence spectrum of the 1D ZnO nanostructures shows a sharp ultraviolet emission at 375 nm and a broad green-band emission.     

Tin– and Titanium–Oxygen Nanostructures on the Various Hydr(oxides) Surfaces

Tin– and titanium–oxygen nanostructures were synthesized by molecular layer-by-layer deposition from the gaseous phase onto various substrates (SnO₂, SiO₂, AlOOH) using (in the course of synthesis) hydroxyl and methoxy surface groups. The electrokinetic (electrokinetic potential, isoelectric point) and adsorption (adsorption of potential-determining ions, the point of zero charge) properties of prepared composites were studied as a function of pH of NaCl background solutions. Synthesis conditions that make it possible to obtain (on the boehmite substrate) nanostructures with electrosurface characteristics similar to the properties of corresponding bulk oxides were determined.     

Efficient synthesis and electronic studies of core-shell nanowires based on colossal magnetoresistive manganites

We report our recent study on the pulsed laser deposition process in the synthesis of colossal magnetoresistive MgO/LaCaMnO3 and MgO/LaSrMnO3 core-shell nanowires. A highly efficient process has been developed by depositing an epitaxial layer of manganite onto randomly oriented MgO nanowires grown on SiO2/Si substrates. In addition, in-depth studies revealed that the sample-target distance played a critical role in determining the core-shell nanowire quality. The MgO/LaCaMnO3 and MgO/LaSrMnO3 nanowires opened up the unique opportunity to explore a number of intriguing physical properties at the nanoscale. Remarkable metal-insulator phase transitions and pronounced colossal magnetoresistance have been observed in both LaCaMnO3 and LaSrMnO3 nanostructures.     

Boundary effects on the electrical conductivity of pure and doped cerium oxide thin films

Thin films of CeO(2) (both nominally pure and 10 mol% gadolinium-doped) grown via pulsed-laser deposition were studied. The electrical conductivity of the samples was measured as a function of thickness, temperature and oxygen partial pressure (pO(2)) using impedance spectroscopy. As expected, undoped CeO(2) exhibits electronic conductivity (with activation energy between 1.4 and 1.6 eV) whereas the highly doped samples are oxygen vacancy conductors (activation energy around 0.7 eV for epitaxial films). In order to investigate the influence of the nature of the substrate the thin films were grown on two different substrates, Al(2)O(3) (0001) and SiO(2) (0001), and compared. While the films grown on SiO(2) exhibit a microstructure characterized by columnar grains, the films grown on Al(2)O(3) are epitaxial. Notably, for films on both substrates the conductivity and activation energy vary with film thickness and exhibit remarkable differences when the films on different substrates are compared. In the case of the polycrystalline films (SiO(2) substrate), the space charge layer effects of the grain boundaries dominate over the substrate-film interface effect. In the case of the epitaxial films (Al(2)O(3) substrate), a small interface effect, probably due to a space charge layer or structural strain, is observed.     

Thermal change of organic light-emitting ALQ3 thin films

A series of Alq3 thin films with the thicknesses of 50, 100, and 200 nm was deposited on Si substrates at room temperature using the thermal evaporation method. The thermal crystallization process of Alq3 thin films, especially 50 nm thick films, was successfully examined using high-temperature X-ray diffraction (HT-XRD) with the in-plane scan mode. Film thickness, density, and changes in surface roughness while heating were determined using X-ray reflectometry (XRR). The decreased density and increased surface roughness, which were accompanied by sublimation, indicate the instability of the Alq3 film. Thus, thermal instability is a major factor for device failure.     

ZnO纳米管有序阵列与Cu2O纳米晶核壳结构的光电化学性能及全固态纳米结构太阳电池研究简

采用电化学方法在铟锡氧化物(ITO)导电玻璃基底上制备了高度有序的ZnO纳米管阵列,然后在ZnO纳米管阵列上电化学沉积Cu2O纳米晶颗粒,获得了一维有序Cu2O/ZnO核壳式纳米阵列结构,通过控制Cu2O纳米晶的沉积电量得到不同厚度的Cu2O壳层,并对该核壳式纳米阵列的形貌和结构进行了分析. 以Cu2O/ZnO一维核壳式纳米阵列结构为光电极组装全固态纳米结构太阳电池,研究了Cu2O壳层厚度对光电极光吸收性能、光电性能以及组装电池光伏性能的影响,优化了电池中对电极材料的喷金厚度. 结果表明,以Cu2O沉积电量为1.5 C的Cu2O/ZnO为光活性层,以4 mA电流下真空镀金20~25 min的铜基底为对电极组装的简易太阳电池最高可获得0.013%的光电转换效率.     

Mechanism of growth of the Ge wetting layer upon exposure of Si(100)-2 x 1 to GeH4

This paper describes the initial reaction kinetics of Ge deposition after exposure of Si(100)-2 x 1 to GeH4 in a UHV-CVD system. The rate of Ge growth, especially at the wetting layer stage, was investigated using in situ X-ray photoelectron spectroscopy to measure the Ge signal at the onset of deposition. A kinetic analysis of the initial growth of the Ge wetting layer at temperatures ranging from 698 to 823 K revealed an activation energy of 30.7 kcal/mol. Density functional theory calculations suggested that opening of the Si dimer--with a closely matching energy barrier of 29.7 kcal/mol, following hydrogen atom migration--was the rate controlling step for the incorporation of a GeH2 unit into the lattice to complete the growth of the Ge wetting layer after dissociative adsorption of GeH4.     

Surfactant-resisted assembly of Fe-containing nanoparticles for site-specific growth of SWNTs on Si surface

This paper describes a facile approach to the site-specific growth of single-walled carbon nanotubes (SWNTs) on silicon surfaces by chemical vapor deposition (CVD). The approach is based on the use of a surfactant as a resist to define patterns of silicon oxide nanodomains onto which nanoparticles of iron hydroxide (Fe(OH)3), 1-5 nm diameter, could be deposited. In base growth mode, the SWNTs can grow from the oxide nanodomains. By controlling the location of oxide nanodomains, site-specific growth could be obtained. The iron hydroxide nanoparticles were prepared by hydrolysis of ferric chloride (FeCl3). Patterned hydroxylated silicon oxide nanodomains were created by scanning probe oxidation (SPO) of silicon substrates modified with aminopropyltrimethoxysilane (APTMS, H2N(CH2)3Si(OCH3)3). Due to electrostatic interaction, Fe(OH)3 nanoparticles can be selectively deposited on hydroxyl groups present on silicon oxide nanodomains. To inhibit the assembly of the nanoparticles on a APTMS-coated silicon surface, sodium dodecyl sulfate (SDS) was introduced, which restricted deposition to the hydroxylated nanodomains. A model mechanism for the selective deposition mechanism has been proposed. It was possible to convert the patterned Fe(OH)3 nanoparticles to iron oxide, which served as a catalyst for the site-specific growth of SWNTs. Raman spectroscopy and AFM were used to characterize the nanotubes on the Si substrate. This will offer the possibility for future integration with conventional microelectronics as well as the development of novel devices.     

A new patterning method using photocatalytic lithography and selective atomic layer deposition

We report a new patterning method using photocatalytic lithography of alkylsiloxane self-assembled monolayers and selective atomic layer deposition of thin films. The photocatalytic lithography is based on the fact that the decomposition rate of the alkylsiloxane monolayers in contact with TiO2 is much faster than that with SiO2 under UV irradiation in air. The photocatalytic lithography, using a quartz plate coated with patterned TiO2 thin films, was done to prepare patterned monolayers of the alkylsiloxane on Si substrates. A ZrO2 thin film was selectively deposited onto the monolayer-patterned Si substrate by atomic layer deposition.