Study of the effects of Ga3+ co-doping on the Lu0.8Sc0.2BO3:Ce scintillation crystals

Transparent Lu_0.8Sc_0.2BO₃ crystals doped with 1 at%Ce³⁺ and co-doped with 1 at% and 3 at%Ga³⁺ were grown by the Czochralski method. We applied absorption spectrum, luminescence spectra under UV and X-ray excitation, fluorescence decay curve, three dimensional thermoluminescene and X-ray absorption near edge spectroscopy to study the effect of Ga³⁺ co-doping on the Lu_0.8Sc_0.2BO₃:Ce scintillation crystals. Experimental results indicated that no positive contribution of the Ga³⁺ ion doping on the scintillation efficiency was found. The causes for the deterioration of scintillation efficiency by co-doping Ga³⁺ were revealed. The decrease of practical cerium content and the Ce³⁺/Ce⁴⁺ ratio in crystals, and the increase of the trap concentrations, although the corresponding trap types still maintained the same, played a joint influence on the degrading of scintillation efficiency of Lu_0.8Sc_0.2BO₃:Ce crystals.     

The growth and spectral analysis of mixed crystal of Yb‐doped Lu0.5Y0.5PO4 mixed crystals

A new kind of 5 at% Yb‐doped Lu_0.5Y_0.5PO₄ crystals were firstly grown by spontaneously nucleated high‐temperature solution method using lead pyrophosphate (Pb₂P₂O₇) as the solvent. The X‐ray powder diffraction (XRPD) patterns recorded at room temperature showed the crystals possessed tetragonal xenotime structure. The polarized absorption spectra and the fluorescence spectra of Yb:Lu_xY_1‐xPO₄ were measured at room temperature, respectively. The results show that Yb:Lu_xY_1‐xPO₄ mixed crystal will be a promising laser material if the crystal size and quality is further improved.     

The influence of Yb3+ concentration on Yb:YAl3(BO3)4

The Yb:YAl₃(BO₃) ₄ crystals with different Yb³⁺ doping concentration have been grown by the flux method. The lattice parameters and decomposition of the Yb:YAl₃(BO₃)₄ crystal with different Yb³⁺ doping concentration were measured by X‐ray and DTA method. The transmission and fluorescence spectra of Yb³⁺:YAl₃(BO₃)₄ crystal have been measured. The growth defects of Yb_xY_1‐xAl₃(BO₃)₄ crystals were also detected by using the chemical etching method. The results show that the ytterbium concentration influences these properties of Yb:YAl₃(BO₃)₄. As the Yb³⁺ concentration increased, the crystal lattice parameter was decreased. At high doping level, the absorption peak concerned at about 980 nm shift to short wavelength. It is also found that the perfection of Yb:YAl₃(BO₃) ₄ crystal with low Yb³⁺ doping concentration is better than that with high Yb³⁺ concentration. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and magnetic‐optical properties of Sr3Gd(BO3)3 and Sr3TbxGd1‐x(BO3)3 single crystals

Single crystals of Sr₃Gd(BO₃)₃ (SGB) and Sr₃Tb_xGd_1‐x(BO₃)₃ (TSGB) with dimension Ø 20 mm×20 mm have been grown by Czochralski method. The grown crystals were characterized by X‐ray powder diffraction analysis which showed the crystals belong to hexagonal structure with lattice parameters of a=b=1.254 nm, c=0.926 nm (SGB) and a=b=1.253 nm, c=0.925 nm (TSGB). In TSGB, x=17.7% was obtained by X‐ray fluorometry which showed the segregation coefficient of Tb is closed to 1. The transmission spectrum was measured, which indicated the crystals have high transmittance in 400‐1100 nm region. The Faraday rotation of single crystals at 532 nm wavelength was measured at room temperature. Finally, the Verdet constants were investigated, (SGB) V=17.9 degcm^‐1T^‐1 and (TSGB) V=21.3 degcm^‐1T^‐1. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and photorefractive properties of Mg:Ce:Cu:LiNbO3 crystals grown by Czochralski method

In this paper, photorefractive properties of Mg:Ce:Cu:LiNbO₃ crystals were studied. The crystals doped with different concentration of Mg ions have been grown by the Czochralski method. Mg concentrations in grown crystals were analyzed by an inductively coupled plasma optical emission spectrometry (ICP‐OE/MS). The crystal structures were analyzed by the X‐ray powder diffraction (XRD), ultraviolet‐visible (UV‐Vis) absorption spectra and infrared (IR) transmitatance spectra. The photorefractive properties of crystals were experimentally studied by using two‐beam coupling. In this experiment we determined the writing time, maximum diffraction efficiency and the erasure time of crystals samples with He‐Ne laser. The results showed that the dynamic range (M/#), sensitivity (S) and diffraction efficiency (η) were dependent on the Mg doping concentration, and the Mg(4.58mol%):Ce:Cu:LiNbO₃ crystal was the most proper holographic recording media material among the six crystals studied in the paper. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Stoichiometric single crystal growth of AgGaS2 by iodine transport method and characterization

High quality single crystals of ternary AgGaS₂ (AGS) semiconductor with chalcopyrite structure have been grown by chemical vapor transport (CVT) technique using iodine as a transporting agent at different growth zone temperatures. The powder X‐ray diffraction and single crystal X‐ray diffraction studies indicate that the as‐grown AGS crystals belong to the tetragonal (chalcopyrite) system with (112) plane as the dominant peak. The full width at half maximum (FWHM) of the X‐ray rocking curve for the as‐grown AGS single crystal is 5 arcsec. The energy dispersive X‐ray analysis (EDAX) and optical transmission spectra of as‐grown AGS single crystals grown at different conditions show the almost same composition and band gap (2.65 eV). Photoluminescence (PL) spectra of as‐grown AGS single crystals show prominent band edge emission at 2.61 eV. The resistivity of the as‐grown AGS single crystal has been measured. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Luminescence characteristics of undoped and Eu‐doped GdCa4O(BO3)3 single crystals and nanopowders

Single crystals of GdCa₄O(BO₃)₃ (GdCOB) pure and doped with Eu concentration of 1 and 4 at% were grown by the Czochralski and micropulling‐down methods. The distribution of Eu ions in GdCOB crystals was uniform. The substitutions of Eu³⁺ in Gd, Ca(1) and Ca(2) cation sites and eventually formation Eu²⁺ have been investigated. The spectroscopic properties of crystals are compared with the properties of nanopowders obtained by sol‐gel method. Radioluminescence spectra of undoped GdCOB crystal show the characteristic emission of Gd³⁺ at about 312 nm, whereas this emission dramatically decreases in Eu‐doped crystals upon X‐ray excitation, as well as in Eu‐doped nanopowders excited in vacuum ultraviolet (VUV) region. The VUV excitation in the range 125‐333 nm for Eu‐doped samples leads to strong emission in red coming from the ⁵D₀ multiplet of Eu³⁺, only. In the photoluminescence decay kinetics of 312 nm emissions substantial shortening and departure for single exponential decay in Eu‐doped samples is clearly observed. Higher Eu doping results in further acceleration of the decay. In undoped GdCOB crystal, the lifetime of the Gd^{3+ 6}P_7/2 multiplet is 2.79 ms. The Eu^{3+ 5}D₀ decay kinetics monitored at 613 nm are rather constant. Numerical fitting of fully exponential curves, reveals lifetimes 2.7 ms for nanopowder and 2.5 ms for single crystal. The results suggest that this material may be used as a red phosphor in plasma display panels in nanopowder form because of strong excitation band of Eu³⁺ luminescence in the 160‐200 nm regions. Contrary to nanopowder sample, such an excitation band, attributed to the Gd³⁺–O^2– charge transfer was not observed in crystal obtained by the micropulling‐down method. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of indium intercalation on various properties of MoSe2 single crystals

Indium intercalated MoSe₂ single crystals i.e. In_xMoSe₂ (0 ≤ x ≤ 1) are grown by direct vapour transport technique. These crystals are structurally characterized by X‐ray diffraction, by determining their lattice parameters ‘a’ and ‘c’ and X‐ray density. The Hall effect and thermoelectric power measurements shows that In_xMoSe₂ (0 ≤ x ≤ 1) are p‐type in nature. The direct and indirect band gap measurements are also undertaken on these semiconducting materials. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystal growth,optical and luminescence properties of (Ce,Sr)‐doped PrAlO3 single crystals

Using the micro‐pulling‐down method, (Ce,Sr)‐doped PrAlO₃ square‐shaped single crystals (4×4×12 mm) were grown. Structural parameters studied by X‐ray powder diffraction were consistent with R3m space group. Compositional homogeneity was checked with electron probe micro‐analysis and found quite uniform. Absorption spectra and luminescence characteristics under UV and X‐ray excitations were measured at room temperature with no Ce‐related emission appeared. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structure and Photo‐Damage Resistance of Li‐Rich LiNbO3 Crystals Co‐Doped with Zn2+/Er3+

The pure congruent LiNbO₃, Er:LiNbO₃ and Zn,Er co‐doped Li‐rich LiNbO₃ crystals were grown by Czochralski method. The X‐ray diffraction method and ultraviolet‐visible absorption spectra of the crystals were used to analyze the structure of the crystals. The photo‐damage ability resistance of the crystals was measured. The Zn,Er co‐doped Li‐rich LiNbO₃ crystals show a decrease in lattice constant values, a shift in absorption edge of ultraviolet‐visible absorption spectra towards shorter wavelength, and three orders of magnitude increase in photo‐damage resistance compared to congruent LiNbO₃ crystal. The intrinsic and extrinsic defects are discussed to explain the enhance of the photo‐damage ability resistance     

Properties of AgGa1‐xInxSe2 single crystals grown by Bridgman method

High‐pure and single‐phase AgGa_1‐xIn_xSe₂ (x=0.2) polycrystalline was synthesized by the mechanical and temperature oscillation method. Adopting the modified Bridgman method an integral AgGa_1‐xIn_xSe₂ single crystal with diameter of 14 mm and length of 35 mm has been obtained at the rate of 6 mm/day. It was found that there is a new cleavage face which was (101), and observed the four order X‐ray spectrum of the {101} faces. By the method of DSC analysis the melting and freezing points of the AgGa_1‐xIn_xSe₂ (x=0.2) single crystal were about 828°C and 790°C. The transmission spectra of the AgGa_1‐xIn_xSe₂ (x=0.2) sample of 5×6×2 mm³ were obtained by means of UV and IR spectrophotometer. The limiting frequency was 774.316nm and the band gap was 1.6eV. It can be found in the infrared spectrum that the infrared transmission was above 60% from 4000cm^‐1 to 600cm^‐1. The value of α in 5.3µm and 10.6µm were 0.022cm^‐1 and 0.1cm^‐1 respectively. All results showed that the crystal was of good quality. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystal growth and luminescent properties of Pr-doped K(Y,Lu)3F10 single crystal for scintillator application

Pr1%:K(Y_1−xLu_x)₃F₁₀ (x=0, 0.2, 0.4) single crystals were grown by the μ-PD method. All the grown crystals were greenish and perfectly transparent without any inclusions or cracks. Radioluminescence spectra and decay kinetics of the Pr1%:K(Y,Lu)₃F₁₀ crystals were measured. Emission from the Pr³⁺ 5d–4f transition, peaking around 260 nm and of the decay time of around 22 ns were observed. The 5d–4f emission intensities of the Pr1%:K(Y,Lu)₃F₁₀ crystals were higher than that of the standard BGO scintillator.     

Structure and morphological stability of (Lu1–xEux)2O3 thin films

(Lu_1–xEu_x)₂O₃ smooth, crack‐free, transparent films were prepared by the Pechini sol–gel method and a spin‐coating technique. Thermogravimetric analysis, differential thermal analysis and FITR spectroscopy were used to study the chemical processes during annealing of the films. Film structure, morphology and optical properties were investigated. X‐ray diffraction (XRD) analysis reveals the cubic phase of (Lu_1–xEu_x)₂O₃ films annealed in the 600–1000 °C temperature range. Smooth and crack‐free films with thicknesses of 250–1000 nm were obtained in the 600–800 °C temperature range. The thickness upper limit (1000 nm) of morphological stability of films (Lu_1–xEu_x)₂O₃ on sapphire substrates has been studied.     

Crystal growth and optical properties of LuYAG:Ce single crystal

Crystals of Ce³⁺-doped (Lu_xY_1?x)₃Al₅O₁₂ (LuYAG) have been grown and studied by X-ray powder diffraction, emission spectroscopy, excitation spectroscopy and X-ray excited fluorescence spectroscopy. The X-ray powder diffraction pattern revealed that the as-grown LuYAG:Ce crystal possessed the garnet structure. Compared with Ce³⁺-doped Y₃Al₅O₁₂ (YAG), the absorption bands associated with the 4f–5d transition shifted to shorter wavelengths, the emission band that originated from a transition from the lowest 5d level to the ²F ground state of the Ce³⁺ ions shifted to the blue, which was probably due to a larger Stokes shift of the emission, and the reduction of relative intensity of antisite defect emission in the X-ray excited fluorescence spectra revealed that introducing Lu ions into YAG could reduce the antisite defect.     

Growth of LGSO: Ce crystals by the Czochralski method

Single crystals of Lu_2x Gd_{2 ? 2x} SiO₅: Ce (0 < x < 1) compounds with different atomic ratios Lu/(Lu + Gd) have been grown by the Czochralski method. It has been shown that a change in the spatial symmetry from P2₁/c to C2/c in the course of substitution of lutetium for gadolinium occurs at the ratio Lu/(Lu + Gd) = 0.1. The lattice thus formed with symmetry C2/c in the structure of Lu_2x Gd_{2 ? 2x} SiO₅: Ce crystals favors the maximum possible incorporation of Ce³⁺ ions into the sevenfold-coordinated position with respect to oxygen. This explains the substantial improvement of the scintillation characteristics of the grown crystals.     

Evolution of the growth interface in liquid phase diffusion growth of bulk SiGe single crystals

The article presents a study for the evolution of growth interface in crystal growth by Liquid Phase Diffusion (LPD). Specific LPD experiments were designed to grow compositionally graded, germanium‐rich Si_xGe_1‐x single crystals of 25 mm in diameter with various thicknesses. Measured interface shapes show the evolution of the growth interface. Silicon compositions were measured by the Energy Dispersive X‐ray analysis (EDX) in the growth and radial directions. The study shows the feasibility of extracting the desired seeds of uniform composition from LPD grown crystals, for subsequent use in other epitaxial growth processes. © 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim     

Investigation on defects in Lu2SiO5:Ce crystals grown by Czochralski method

Cerium‐doped lutetium oxyorthosilicate crystals (Lu₂SiO₅:Ce) with dimension of ∅︁50 × 60 mm were grown by Czochralski method from an inductively heated iridium crucible. The vaporized substance during growth was examined with XRD and proved to be SiO₂. The vertical and the screw strips existing on the surface of the boule were observed with optical microscope and tested with electron microprobe. They are confirmed to be iridium from the crucible and harmful to the crystal growth. The cleavage orientation of LSO was proved to be (110) and it is one of factors to cause crystal cracking. The scattering particles in LSO crystals are analyzed to be mainly composed of Lu₂O₃ inclusions. Two possible origins on these inclusions are proposed. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and optical damage resistance of Sc,Er Co‐doped LiNbO3 crystals

A series of Sc:Er:LiNbO₃ crystals have been grown by Czochralski method. Their ultraviolet‐visible (UV‐Vis) absorption spectra was measured and discussed to investigate their defect structure. The optical damage resistance of Sc:Er:LiNbO₃ crystals was characterized by the transmitted beam pattern distortion method. It increases remarkably when the concentration of Sc₂O₃ exceeds a threshold concentration. The optical damage resistance of Sc (3.0mol %):Er:LiNbO₃ is much higher than that of the Er:LiNbO₃. The intrinsic and extrinsic defects were discussed to explain the enhance of the optical damage resistance in the Sc:Er:LiNbO₃ crystals. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Defect structure and spectroscopic characteristics of codoped Hf: Er: LiNbO3 crystals

Codoped Hf: Er: LiNbO₃ crystals have been grown by the Czochralski technique. Defect structures of the crystals were analyzed by IR absorption spectra, and the compositions of the crystals were measured by X‐ray fluorescent spectrograph. A new OH^–‐associated vibrational peak at 3492 cm^–1 was revealed in 6 mol % Hf: 1 mol % Er: LiNbO₃ crystal. It was attributed to (Hf_Nb)^–‐OH^–‐(Er_Nb)^2– defect centers. The Er³⁺ concentrations in crystals gradually decreased with the increase of the codoped Hf⁴⁺ concentrations in the melts. The emission characteristics of the crystals were investigated by the fluorescence spectrum. It was found that the luminescent intensity in codoped 6 mol % Hf: 1 mol % Er: LiNbO₃ crystal was 3.5 times stronger than that in single doped 1 mol % Er: LiNbO₃ crystal. The luminescent enhancement effect was successfully explained on the basis of defect structure of the crystals. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Improved Single Crystal Growth of the Boron Sillenite “Bi24B2O39” and Investigation of the Crystal Structure

The boron sillenite, up to now known as the 12:1 compound Bi₂₄B₂O₃₉ in the system Bi₂O₃ – B₂O₃ andcrystallizing in the space group I23, melts incongruently at 655 °C only about 25 K above the eutectic tie line and corresponding to a steep liquidus line. Single crystals with dimensions larger then 1 cm ³ have been successfully grown in [100], [110], and [111] direction by an improved Top Seeded Solution Growth (TSSG) technique equipped with crucible weighing, accelerated crystal rotation technique and air‐cooled pulling rod. The structure of the boron sillenite was analyzed by X‐ray diffraction method, which was possible due to the high crystalline quality achieved. A defect‐free sublattice corresponding to a Bi‐O framework is isostructural with all sillenites, but a 2 Å environment around the origin is occupied by different cations with different population coefficients. The best calculation results in the formula Bi_24.5BO_38.25 which is more Bi‐rich than the 12:1 assumption.