The (Bi,Pb)4Sr3Ca3Cu4Ox glass–ceramics: Disordered metal and superconductor

The (Bi_0.8Pb_0.2)₄Sr₃Ca₃Cu₄O_x glass, annealed under proper conditions, is transformed into a granular metal and superconductor. Oxide superconductors of the bismuth family crystallize as a result of annealing: (Bi,Pb)₂Sr₂CuO_x (2201, T_c = 10 K), (Bi,Pb)₂Sr₂CaCu₂O_x (2212, T_c = 85 K) and (Bi,Pb)₂Sr₂Ca₂Cu₃O_x (2223, T_c = 100 K). (Bi_0.8Pb_0.2)₄Sr₃Ca₃Cu₄O_x glass–ceramic samples were obtained by annealing an amorphous solid at temperatures between 650 °C and 870 °C. The temperature dependence of resistivity in annealed samples was measured with the conventional four-terminal method in the temperature range from 3 K to 300 K. The (Bi_0.8Pb_0.2)₄Sr₃Ca₃Cu₄O_x glass–ceramics may be considered as a disordered metal and superconductor. The material has high resistivity and a high, usually negative, temperature coefficient of resistivity (TCR). Its granular and disordered character is also reflected in its superconducting properties. The normal-state and superconducting properties are correlated.     

Electronic conduction in (Bi, Pb)–Sr–Ca–Cu–O glass-ceramics

Electrical properties of (Bi, Pb)₄Sr₃Ca₃Cu₄O_x granular metals and superconductors obtained by the solid state crystallization method were studied. The studied materials may be considered as 3D systems of small oval granules of the (Bi, Pb)₂Sr₂CuO_x and (Bi, Pb)₂Sr₂CaCu₂O_x phases embedded in the insulating matrix. They may by divided into two main groups: these in which the granules below the critical temperature transform into the superconducting state and those in which they remain in the normal state throughout the entire temperature range studied. The electronic transport in the (Bi, Pb)Sr–Ca–Cu–O granular system of the granules in the normal state occurs by the variable range hopping mechanism either with or without Coulomb interactions. The materials, which below the transition temperature contain the granules in the superconducting state, show different types of temperature dependence of resistivity. Those composed of very small granules (10 nm) of the superconducting phase exhibit an exponential dependence typical of the strong localization regime. In samples containing relatively large granules of the 2 2 0 1 phase (30 nm), the bulk superconducting state was achieved. The intermediate materials show unusual temperature dependence of resistivity, not compatible with the known models of electronic transport in granular materials.     

Growth and characterization of InxBi2−xTe3 single crystals

The V–VI group narrow band gap compounds are known to have important photoconductivity and thermoelectric properties. Among these, Bi₂Te₃ is the most potential material for thermoelectric devices having a direct band gap of 0.16 eV. There has been ample study reported on crystal growth and polycrystalline thin films of both pure and indium doped Bi₂Te₃ pertaining to its basic semiconducting, optoelectronic and thermoelectric properties. It has been shown that on exceeding certain limiting concentration of indium in Bi₂Te₃, the conductivity changes from p-type to n-type. However, there is hardly any work reported in literature on crystal growth, dislocation etching and optical band gap of In_xBi_2?xTe₃ (x=0.1, 0.2, 0.5) single crystals. The authors have grown their single crystals using the zone melting method. The freezing interface temperature gradient of 70 °C/ cm^?1 has been found to yield the best quality crystals obtainable at the growth rate of 0.4 cm/h. The as-grown crystals have been observed to exhibit certain typical features on their top free surfaces. The crystals have been characterized using XRD technique. A chemical dislocation etchant has been used for estimating perfection in terms of dislocation density in the crystals. The optical absorption was measured in the wave number range 500 to 4000 cm^?1. The transitions in all the cases were observed to be allowed direct type. The detailed results are reported in the paper.     

Blocky and spheroidal growth in Y1.5Ba2Cu3Ox system

Solidification of Y_1.5Ba₂Cu₃O_x system was studied with the aim to find the temperature of self-nucleation. The microstructure after cooling from isothermal dwells in the temperature range 984–995 °C was analysed. It is shown that blocky YBa₂Cu₃O_7?δ crystals were self-nucleated and grown during isothermal dwells below 988 °C and spheroidal multicrystals were formed during cooling from isothermal dwells at higher temperatures. The symmetrical and radial YBa₂Cu₃O_7?δ crystal branches of spheroids grow in the 〈110〉 crystal direction.     

Effects of tantalum doping on microstructure and ferroelectric properties of Bi4Ti3O12 thin films prepared by a sol–gel method

Tantalum-substituted Bi₄Ti₃O₁₂ (Bi₄Ti_3-x/5Ta_x/5O₁₂, BTTO) thin films were fabricated on Pt(111)/Ti/SiO₂/Si(100) substrates by sol–gel technology. The effects of various processing parameters, including Ta content (x=0～0.08) and annealing temperature (500～800 °C), on the growth and properties of thin films were investigated. X-ray diffraction analysis shows that the BTTO thin films have a bismuth-layered perovskite structure with preferred (117) orientation. With the increase of Ta content, the grain size of film decreased slightly, and highly (117)-oriented BTTO films were obtained in the composition of x=0.06. Ta doping on the B-site of Bi₄Ti₃O₁₂ could induce the distortion of oxygen octahedral and decrease the oxygen vacancy concentration by a compensating effect. The highly (117)-oriented BTTO thin films with x=0.06 exhibits the maximum remanent polarization (2P_r) of 50 μC/cm² and a low coercive field (2E_c) of 104 kV/cm, fatigue free characteristics up to ≧ 10⁸ switching cycles.     

Bulk metallic glass formation in Cu–Zr–Ti ternary system

The formation of bulk metallic glasses (BMG) in the Cu-rich Cu–Zr–Ti ternary system is studied by using the ‘e/a-variant line criterion’. Three such lines, (Cu₉Zr₄)_1−xTi_x, (Cu_61.8Zr_38.2)_1−xTi_x and (Cu₅₆Zr₄₄)_1−xTi_x, are defined in the Cu–Zr–Ti system by linking three binary compositions Cu₉Zr₄, Cu_61.8Zr_38.2 and Cu₅₆Zr₄₄ to the third element Ti. The binary compositions Cu₉Zr₄, Cu_61.8Zr_38.2 and Cu₅₆Zr₄₄ correspond to specific Cu–Zr binary clusters. BMGs are obtained by copper mould suction casting method with Ti contents of 7.5–15 at.%, 7.5–12.5 at.% and 5–12 at.%, respectively along the (Cu₉Zr₄)_1−x Ti_x, (Cu_61.8Zr_38.2)_1−xTi_x and (Cu₅₆Zr₄₄)_1−xTi_x lines. The BMGs on each composition line manifest decreased thermal stabilities and glass forming abilities (GFAs) with increasing Ti contents. The maximum GFA appears at Cu₆₄Zr_28.5Ti_7.5, with characteristic thermal parameters of T_g = 736 K, T_x = 769 K, T_g/T_l = 0.627 and γ = 0.403, which are all superior to those reported for the known Cu₆₀Zr₃₀Ti₁₀ BMG.     

Single crystal growth from the melt and magnetic properties of hexaferrites–aluminates

Single crystals of aluminum substituted barium hexaferrite were grown by the floating zone method with optical heating. Single crystals were produced from a melt of stoichiometric composition. The process was carried out under a pressure of 50 atm of oxygen. In the system BaO–(x)Al₂O₃–(6?x)Fe₂O₃ the region of single phase crystal growth from the melt is limited by the value x=3. For higher substitutions single-phase crystallization is not observed. The grown single crystals are cylindrical boules with a diameter of 4–5 mm and with lengths up to 50 mm. To avert cracking the crystals have been annealed during the process of growth at 1100 °C. The content of FeO in the composition of single crystals of barium hexaferrite, grown by zone melting under an oxygen pressure of 50 atm, is approximately 0.3 wt%. In the system of hexaferrite–aluminates the macroscopic magnetic moment of the material disappears at x=3.     

Glass composition dependence of luminescence due to Ge2+ center in germanate glasses

Germanate glasses were prepared by the melt-quenching method using an assembled hot-thermocoupler equipped in a sample chamber of a fluorescence spectrometer, and subsequently their luminescence and excitation spectra were measured. In the GeO₂ glass, luminescence bands due to the Ge²⁺ center appeared at the central wavelengths of 300 and 395 nm, their excitation bands being at 250 and 330 nm, respectively. In the (100 − x)GeO₂ − xM_mO_n glasses, for M_mO_n = B₂O₃ (x ≦ 50), SiO₂ (x ≦ 40), and Al₂O₃ (x ≦ 2), the luminescence intensity and therefore the amount of the Ge²⁺ center increased with increasing the content of M_mO_n, where M^(2n/m)+ ions (B³⁺, Si⁴⁺, and Al³⁺) have lower basicities than a Ge⁴⁺ ion. Contrarily, for M_mO_n = Li₂O (x ≦ 30), Na₂O (x ≦ 20), K₂O (x ≦ 20), CaO (x ≦ 20), SrO (x ≦ 3), BaO (x ≦ 15), ZnO (x ≦ 20), Ga₂O₃ (x ≦ 10), Sb₂O₃ (x ≦ 20), Bi₂O₃ (15 ≦ x ≦ 25), TiO₂ (x ≦ 3), and Nb₂O₅ (x ≦ 10), the luminescence intensity and the amount of the Ge²⁺ center rapidly decreased with increasing the amount of additives and disappeared, where M^(2n/m)+ ions (Li⁺, Na⁺, K⁺, Ca²⁺, Sr²⁺, Ba²⁺, Zn²⁺, Ga³⁺, Sb³⁺, Bi³⁺, Ti⁴⁺, and Nb⁵⁺) have higher basicities than a Ge⁴⁺ ion.     

Evolution of nanocrystalline BaBi2Nb2O9 in Li2B4O7–BaO–Bi2O3–Nb2O5 glass system

Transparent glasses and glass nano crystal composites (GNCs) of various compositions in the system (100 − x)Li₂B₄O₇–x(BaO–Bi₂O₃–Nb₂O₅) (where x = 10, 20, and 30 in molar ratio) were fabricated via splat-quenching technique. The glassy nature of the as-quenched samples was established by differential thermal analyses. X-ray powder diffraction and transmission electron microscopic (TEM) studies confirmed the formation of layered perovskite BBN via a fluorite like phase. TEM studies revealed the presence of 10 nm sized spherical crystallites of fluorite like BaBi₂Nb₂O₉ phase in the glassy matrix of Li₂B₄O₇ (LBO). The influence of composition on the dielectric and the optical properties (transmission, optical band gap) of these samples has been investigated.     

Electromechanical and electro-optic properties of xBiScO3–yBiGaO3–(1−x−y)PbTiO3 single crystals

Single crystals in the xBiScO₃–yBiGaO₃–(1−x−y)PbTiO₃ (BS–BG–PT) system were grown by the high temperature solution method using Pb₃O₄ and Bi₂O₃ as the flux. The dielectric permittivity (ε_r) at room temperature for unpoled tetragonal crystals was determined to be 500–600 with dielectric loss tangents less than 0.3%. The Curie temperature was found to be around ∼420–450°C, with a dielectric maximum, exhibiting relaxor behavior. The longitudinal piezoelectric coefficient (d₃₃) was found to be ∼300 pC/N for 〈0 0 1〉 oriented tetragonal crystals with electromechanical coupling factor (k₃₃) of 75%, with a shear mode, d₁₅∼290 pC/N and k₁₅∼45%, lateral mode, d₃₁∼−55 pC/N and k₃₁∼−37%. The remnant polarization (P_r) was 46 μC/cm² with a coercive field (E_c) of 43 kV/cm at 1 Hz and DC field of 60 kV/cm. The linear electro-optic (E-O) coefficients of poled crystals determined using an automated scanning Mach–Zehnder interferometer method at room temperature and wavelength of 632.8 nm were r₃₃=36 and r₁₃=4 pm/V, respectively.     

Enhancement of ferroelectricity in the compositionally graded (Pb,Sr)TiO3 thin films derived by a sol–gel process

The compositionally graded Pb_1−xSr_xTiO₃ (PST) films with a fine compositional gradient from Pb_0.6Sr_0.4TiO₃ to Pb_0.3Sr_0.7TiO₃ were fabricated on LNO-buffered Pt/Ti/SiO₂/Si substrates by a sol–gel deposition method. The graded films crystallized into a pure perovskite structure and exhibited highly (1 0 0) preferred orientation after post-deposition annealing. Dielectric and ferroelectric properties were investigated as a function of temperature, frequency and direct current bias field. Dielectric constant peaks, common to a ferroelectric transition, were not observed in the temperature range of 25–250 °C within which the dielectric constant showed weak temperature dependence. This compositionally graded thin film can result in a dielectric constant more than double and a remanent polarization at least two and a half times larger than conventional PST thin films.     

Influence of Bi2O3 content on the crystallization behavior of TeO2–Bi2O3–ZnO glass system

Glass ceramic materials with composition 75TeO₂–xBi₂O₃–(25-x)ZnO (x = 13, 12, 11) possessing transparency in the near- and mid-infrared (MIR) regions were studied in this paper. It was found that as the Bi₂O₃ content increased in the glass composition, the observed crystallization tendency is enhanced, and high crystal concentrations were obtained for the glasses with high Bi₂O₃ content while maintaining transparency in the MIR region. Crystal size in the glass ceramic was reduced by adjusting the heat treatment conditions; the smallest average size obtained in this study is 700 nm. Bi_0.864Te_0.136O_1.568 was identified using X-ray Diffraction (XRD) and found to be the only crystal phase developed in the glass ceramics when the treatment temperature was fixed at 335 °C. The morphology of the crystals was studied using Scanning Electron Microscopy (SEM), and crystals were found to be polyhedral structures with uniform sizes and a narrow size distribution for a fixed heat treatment regime. Infrared absorption spectra of the resulting glass ceramics were studied. The glass ceramic retained transparency in the infrared region when the crystals inside were smaller than 1 μm, with an absorption coefficient less than 0.5/cm in the infrared region from 1.25 to 2.5 μm. The mechanical properties were also improved after crystallization; the Vickers Hardness value of the glass ceramic increased by 10% relative to the base glass.     

Nanocrystallites in Bi–As–S system

Bi₂S₃–As₂S₃ composite formation was performed by two methods: by the direct insertion of Bi₂S₃ nanocrystals into a molten As₂S₃ glass which was further solidified and by the crystallization of a rapidly quenched (As₂S₃)_1−x (Bi₂S₃)_x glasses with x = 0.005, 0.01, 0.02 and 0.04 at different conditions. Fine tuning of the annealing of the quenched glass as well as the mixing of nanocrystals in to the molten glass resulted glass-crystalline composites with different amounts and distribution of 20–50 nm large Bi₂S₃ nanocrystals as well as larger, up to few micrometer long, needle-like crystals. Structural and optical investigations support the presence of the Bi₂S₃ crystalline phase in all composites. Optical absorption and the photoconductivity of bulk composite samples follow the structural changes of the structure in the amorphous and amorphous-crystalline phase. In addition, the 290 cm⁻¹ characteristic band in Raman spectra may be used for tracing the formation of the nanocomposites.     

Ultrafine Co1−xZnxFe2O4 particles synthesized by hydrolysis: Effect of thermal treatment and its relationship with magnetic properties

Co_1−xZn_xFe₂O₄ (x = 0, 0.2 and 0.4) fine powders with particles size of 3 nm were prepared by hydrolysis method. The powders were annealed at 500 °C for 3 h. With heat treatment, the average particles size increased to 12 nm with corresponding increase in blocking temperature, saturation magnetization and reduced remanence. A significant increase in coercive field was found only for the pure CoFe₂O₄.     

Crystallization of bismuth oxide nano-crystallites in a SiO2–PbO–Bi2O3 glass matrix

SiO₂–PbO–Bi₂O₃ glasses having the composition of 35SiO₂–xPbO–(65 ? x)Bi₂O₃ (where x = 5, 20 and 45; in mol%) have been prepared using the conventional melting and annealing method. Differential scanning calorimetry (DSC) was employed to characterize the thermal behavior of the prepared glasses in order to determine their crystallization temperatures (T_cr). It has been found that T_cr decreases with the decrease of Bi₂O₃ content. The amorphous nature of the prepared glasses as well as the crystallinity of the produced glass–ceramics were confirmed by X-ray powder diffraction (XRD) analysis. SiPbBi₂O₆ glass nano-composites, comprising bismuth oxides nano-crystallites, were obtained by controlled heat-treatment of the glasses at their (T_cr) for 10 h. Transmission electron microscopy (TEM) of the glass nano-crystal composites demonstrates the presence of cubic Bi₂O₃ nano-crystallites in the SiPbBi₂O₆ glass matrix. Nano-crystallites mean size has been determined from XRD line width analysis using Scherrer's equation as well as from TEM; and the sizes obtained from both analyses are in good agreement. These sizes varied from about 15 to 170 nm depending on the chemical compositions of parent glasses and, consequently, their structure. Interestingly, replacement of the Bi₂O₃ by PbO in the glass compositions has pronounced effect on the nature, morphology and size of the formed nano-crystallites. Decrease of the Bi₂O₃ content increases the size of the nano-crystallites, and at the lowest Bi₂O₃ extreme, namely 20 mol%, introduces minority of the monoclinic Bi₂O₄ in addition to the cubic Bi₂O₃. The crystallization mechanism is suggested to involve a diffusion controlled growth of the bismuth oxide nano-crystallites in the SiPbBi₂O₆ glass matrix with the zero nucleation rate.     

Nanostructural and optical features of amorphous AlxSi0.45−xO0.55 (0 ⩽ x ⩽ 0.05) thin films prepared by RF-magnetron sputter techniques

The nanostructural, chemical, and optical features of Al_xSi_0.45−xO_0.55 (0 ⩽ x ⩽ 0.05) thin films were investigated in terms of Al concentration and post-deposition annealing conditions; the films were prepared by co-sputtering a Si main target and Al-chips, and the annealing was carried out at temperatures of 400–1100 °C. The a-Si_0.45O_0.55 films prepared without Al-chips and annealed at 800 °C contain ∼3.5 nm-sized Si nanocrystallites. The photoluminescence (PL) intensity as well as the volume fraction of Si nanocrystallites increased with increasing the concentration of Al to a certain level. In particular, the intensity of the PL spectra of the Al_0.025Si_0.425O_0.550 films which were annealed at 800 °C increased significantly at wavelengths of ∼580 nm. It is highly likely that the observed increase in the PL intensity is caused by the raise in the total volume of the ∼3.5 nm-sized nanocrystallites in the films. The addition of Al as well as the post-deposition annealing allow adjustment and control of the nanostructural and light-emission features of the a-SiO_x films.     

Formation and thermal stability of Pd-based bulk metallic glasses

The glass-forming ability and thermal stability of bulk glassy Pd₇₉Cu₆Si₁₀P₅ alloy were studied by substitution of Cu with Ag and with Au + Ag from 0 to 6 at.%. The results indicated that the small addition of Ag strongly affects the thermal stability and glass-forming ability of the Pd₇₉Cu₆Si₁₀P₅ alloy. The alloy doped with 4 at.% Ag (Pd₇₉Cu₂Ag₄Si₁₀P₅) exhibits the largest glass-forming ability among the Pd₇₉Cu_6−xAg_xSi₁₀P₅ (x = 0–6 at.%) alloys. The critical diameter for glass formation of this alloy reaches as large as 7 mm by copper mold casting. On the other hand, the multi-addition of Au + Ag does not increase the glass forming ability though the Ag and Au are similar in atomic size. The largest glass forming ability is obtained at 1 at.% Au + 2 at.% Ag among the Pd₇₉Cu_6−x−yAu_xAg_ySi₁₀P₅ (x = 1–4 at.%, y = 1–3 at.%) alloys. The critical diameter of this alloy is 5 mm by copper mold casting.     

Dielectric low-k composite films based on PMMA,PVC and methylsiloxane-silica: Synthesis,characterization and electrical properties

This report describes the preparation of low-k inorganic–organic hybrid dielectric films, based on a polymethylmethacrylate–polyvinylchloride (PMMA–PVC) blend and a silica powder functionalized on the surface with methylsiloxane groups (m-SiO₂). By dispersing m-SiO₂ into a [(PMMA)_x(PVC)_y] 50/50 (x/y) wt% polymer blend, six [(PMMA)_x(PVC)_y]/(m-SiO₂)_z hybrid inorganic–organic materials were obtained, with z ranging from 0 to 38.3 wt% and x = y = (100 − z)/2. The transparent, homogeneous, crack-free films were obtained by a solvent casting process from a THF solution. The morphology, thermal stability and transitions of hybrid materials were studied by environmental scanning electron microscopy (ESEM), thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC). ESEM revealed that hybrid dielectric films are very homogeneous materials. The electrical response of the dielectric films was studied by detailed broadband dielectric spectroscopy (BDS). BDS measurements were performed at frequencies of 40 Hz to 10 MHz and a temperature range of 0–130°C. In these temperature and frequency ranges the proposed materials have a dielectric constant of <3.5 and a tan δ of <0.05. BDS also revealed molecular relaxation events in [(PMMA)_x(PVC)_y]/(m-SiO₂)_z materials as a function of temperature and sample composition. Results showed that these films with z in the range 25–35 wt% are very promising low-k dielectrics for applications in organic thin film transistor (OTFT) devices.     

Bulk glass formation and mechanical properties for Cu–Hf–Ti–M (M = B,Y) alloys

The glass forming ability (GFA), nanohardness H_n and Young’s modulus E of ternary alloys in the compositional series Cu₆₀Hf_40−xTi_x (x = 5–35) are reported and discussed. Bulk glass formation was observed for the three alloys x = 17.5, 20 and 22.5, with critical rod diameters d_c for a fully glassy structure of 4, 4 and 3 mm, respectively. A d_c of 4 mm was also observed for the Cu₅₅Hf₂₅Ti₂₀ alloy. These compositions generally had the highest values of reduced glass temperature while no correlation was observed between the GFA and the parameter ΔT_x. Both H_n and E surprisingly showed minima at ∼20 at.%Ti for the Cu₆₀Hf_40−xTi_x series. The addition of 1 at.%B or Y to the Cu₆₀Hf_22.5Ti_17.5 alloy slightly decreased the GFA but slightly increased the elastic modulus.     

Electrical properties of SrBi2(Nb0.7V0.3)2O9−δ in the SrO–Bi2O3–0.7Nb2O5–0.3V2O5–Li2B4O7 glass system

Glasses in the system (100 − x)Li₂B₄O₇–x(SrO–Bi₂O₃–0.7Nb₂O₅–0.3V₂O₅) (where x = 10, 30 and 50, in molar ratio) were fabricated via melt quenching technique. The compositional dependence of the glass transition (T_g) and crystallization (T_cr) temperatures was determined by differential thermal analysis. The as-quenched glasses on heat-treatment at 783 K for 6 h yielded monophasic crystalline strontium bismuth niobate doped with vanadium (SrBi₂(Nb_0.7V_0.3)₂O_9−δ (SBVN)) in lithium borate (Li₂B₄O₇ (LBO)) glass matrix. The formation of nanocrystalline layered perovskite SBVN phase was preceded by the fluorite phase as established by both the X-ray powder diffraction (XRD) and transmission electron microscopy (TEM). The dielectric constants for both the as-quenched glass and glass–nanocrystal composite increased with increasing temperature in the 300–873 K range, exhibiting a maximum in the vicinity of the crystallization temperature of the host glass matrix. The electrical behavior of the glasses and glass–nanocrystal composites was characterized using impedance spectroscopy.