Crystallization of amorphous Al2O3–SiO2 precursors doped with nickel

The crystallization of amorphous diphasic Al₂O₃–SiO₂ precursors doped with nickel has been studied by differential scanning calorimetry (DSC), XRD diffraction (XRD) and scanning and transmission electron microscopy (SEM, TEM) equipped with energy dispersive X-ray spectroscopy (EDS). Diphasic gels with constant atomic ratio (Al + Ni)/Si = 3:1, where 0, 1, 2 and 3 at.% of aluminum were replaced by nickel, have been prepared by hydrolyzing of TEOS in aqueous solution of aluminum nitrate. Crystallization of Ni-containing γ-Al₂O₃ preceded the crystallization of Al–Si spinel. Activation energy of 603 ± 16 kJ mol⁻¹ for crystallization of Ni-containing γ-Al₂O₃ was obtained in non-isothermal conditions. Ni-incorporated γ-Al₂O₃ transforms gradually with the temperature increase into Ni aluminate spinel, while Al–Si spinel reacts with amorphous silica forming mullite at about 1200 °C. Rietveld structure refinement of phases present in the samples annealed at 1600 °C and SEM-EDS and TEM-EDS analyses of related phases have shown that nickel predominantly crystallizes as NiAl₂O₄, but small amount of nickel is incorporated in mullite structure, as well as, dissolved in the glassy phase of the system.     

Structural study of undoped and (Mn, In)-doped SnO2 thin films grown by RF sputtering

Undoped and 5%(Mn, In)-doped SnO₂ thin films were deposited on Si(1 0 0) and Al₂O₃ (R-cut) by RF magnetron sputtering at different deposition power, sputtering gas mixture and substrate temperature. X-ray reflectivity was used to determine the films thickness (10–130 nm) and roughness (～1 nm). The combination of X-ray diffraction and Mössbauer techniques evidenced the presence of Sn⁴⁺ in an amorphous environment, for as-grown films obtained at low power and temperature, and the formation of crystalline SnO₂ for annealed films. As the deposition power, substrate temperature or O₂ proportion are increased, SnO₂ nanocrystals are formed. Epitaxial SnO₂ films are obtained on Al₂O₃ at 550 °C. The amorphous films are quite uniform but a more columnar growth is detected for increasing deposition power. No secondary phases or segregation of dopants were detected.     

Thermal expansion of glass–ceramics in the system BaO/Al2O3/B2O3

Glasses in the system BaO/Al₂O₃/B₂O₃ with and without the addition of platinum were melted. In one sample series, the BaO-concentration was varied while the ratio [Al₂O₃]/[B₂O₃] was kept constant. In another sample series, the [BaO]/[Al₂O₃]-ratio (= 0.9) was kept constant and the B₂O₃ concentration was varied. The samples were thermally treated at 720 °C for 24 h and subsequently at 780 °C for 4 h. In most thermally treated samples, the crystalline phase BaO · Al₂O₃ · B₂O₃ occurred. At some compositions, the platinum-doped samples showed larger concentrations of the crystalline phases. The most remarkable property of the obtained glass–ceramics is their zero or negative thermal expansion coefficient. Here, notable differences were observed: samples with fine grained microstructures showed thermal expansion coefficients approximately zero up to temperatures of around 80 °C. By contrast, samples with coarser microstructures and large spheroidal crystals exhibit negative expansion coefficients up to temperatures of around 280–375 °C. The thermal expansions of these samples were close to those of the mean thermal expansion of the unit cell of the BaO · Al₂O₃ · B₂O₃ phase. The thermal expansion of the fine grained samples was approximately equal to that of the crystallographic a-axis of the BaO · Al₂O₃ · B₂O₃ phase.     

Preparation and characterization of nickel based catalysts on silica,alumina and titania obtained by sol–gel method

This work reports the investigation of the characteristics of catalysts produced by the sol gel process. Our analysis focuses on the properties related to heterogeneous catalysis, such as methane steam reforming, dry reforming, hydrogenation of organic compositions. Alumina, silica and titania based materials doped with Ni were synthesized. The characterization techniques used were: temperature programmed reduction, thermogravimetric analysis, specific surface area and X-ray powder diffraction. The specific surface area values obey the following sequence: Ni–SiO₂ > Ni–Al₂O₃ > Ni–TiO₂. The temperature programmed reduction indicated that in the Ni–SiO₂ sample, the nickel oxide is present in two different forms on the surface; the Ni–Al₂O₃ material presented one peak at high temperature, suggesting the presence of a nickel aluminate form. However, Ni–TiO₂ did not present reduction peaks. The thermogravimetric analysis, which was performed under inert atmosphere, showed the decomposition of the organic residues adsorbed on surface. The X-ray powder diffraction patterns of calcined materials showed two crystalline forms for TiO₂ in Ni–TiO₂ rutile and anatase. In Ni–Al₂O₃, crystalline areas composed of α-Al₂O₃, γ-Al₂O₃ and NiO were observed and finally for Ni–SiO₂, amorphous areas and NiO were found.     

Effect of film thickness on the breakdown temperature of atomic layer deposited ultrathin HfO2 and Al2O3 diffusion barriers in copper metallization

We investigate the effect of thickness of HfO₂ and Al₂O₃ barrier films on the breakdown temperature of Cu/barrier film/Si structures. The HfO₂ and Al₂O₃ films are deposited using tetrakis-diethylamino hafnium and tris-diethylamino aluminum, respectively, as the metal precursors and ozone as the oxidizer at 250 °C. Interactions between the layers of Cu/barrier film (1 or 2 nm-thick)/Si structures due to high-temperature annealing in N₂ are probed using sheet resistance measurements. The crystallinity of the multilayer structure and the possible formation of any anneal-induced reaction products are investigated with X-ray diffraction (XRD). The formation of Cu-silicide phase(s) due to diffusion of Cu atoms through the barrier layer indicates the failure of the corresponding diffusion barrier. The surface morphology of Cu is examined using scanning electron microscopy (SEM) and elemental mapping is done with energy dispersive X-ray spectroscopy (EDS). Our results show that both 1 and 2 nm-thick HfO₂ and Al₂O₃ barrier films are capable of restricting the diffusion of Cu at high annealing temperatures; therefore, they could be used as effective diffusion barriers between Cu and Si.     

Nanostructural and optical features of amorphous AlxSi0.45−xO0.55 (0 ⩽ x ⩽ 0.05) thin films prepared by RF-magnetron sputter techniques

The nanostructural, chemical, and optical features of Al_xSi_0.45−xO_0.55 (0 ⩽ x ⩽ 0.05) thin films were investigated in terms of Al concentration and post-deposition annealing conditions; the films were prepared by co-sputtering a Si main target and Al-chips, and the annealing was carried out at temperatures of 400–1100 °C. The a-Si_0.45O_0.55 films prepared without Al-chips and annealed at 800 °C contain ∼3.5 nm-sized Si nanocrystallites. The photoluminescence (PL) intensity as well as the volume fraction of Si nanocrystallites increased with increasing the concentration of Al to a certain level. In particular, the intensity of the PL spectra of the Al_0.025Si_0.425O_0.550 films which were annealed at 800 °C increased significantly at wavelengths of ∼580 nm. It is highly likely that the observed increase in the PL intensity is caused by the raise in the total volume of the ∼3.5 nm-sized nanocrystallites in the films. The addition of Al as well as the post-deposition annealing allow adjustment and control of the nanostructural and light-emission features of the a-SiO_x films.     

MOCVD and characterization of Hf-silicate thin films using HTB and TEMAS

Hafnium silicate (HfSi_xO_y) films were deposited by metal-organic chemical vapor deposition (MOCVD) using a combination of precursors: hafnium tetra-tert-butoxide [Hf(OC(CH₃)₃)₄, HTB] and tetrakis-ethylmethylamino silane [Si(N(C₂H₅)(CH₃))₄, TEMAS]. The activation energy was independent on the ratio of precursor amounts in the surface reaction regime. The grown films showed Hf-rich characteristics and the impurity concentrations were less than 1 at.% (below detection limits). Hafnium silicate films were amorphous up to 700 °C annealing. Hf/(Hf + Si) composition ratio and dielectric constant (k) of the Hf-silicate films decreased by increasing the growth temperature above 270 °C.     

Role of interfacial crystallites in the crystallization of α-Fe2O3/α-Al2O3(0 0 0 1) thin films

In situ crystallization of α-Fe₂O₃/α-Al₂O₃(0 0 0 1) thin films was studied in real-time synchrotron X-ray scattering experiments. We find the coexistence of α-Fe₂O₃ (hexagonal) and Fe₃O₄ (cubic) interfacial crystallites (∼50-Å-thick), well aligned [0.02° full-width at half-maximum (FWHM)] to the α-Al₂O₃[0 0 0 1] direction, in the sputter-grown amorphous films. As the annealing temperature increases up to 750°C, the cubic stacking of the Fe₃O₄ crystallites gradually changes to the hexagonal α-Fe₂O₃ stacking, together with the growth of the well-aligned (WA) (0.02° FWHM) grains from the α-Fe₂O₃ crystallites. In the meanwhile, heterogeneous nucleation starts to occur on the substrate at ∼600°C, resulting in the formation of misaligned (1.39° FWHM) α-Fe₂O₃ grains. Our study reveals that the interfacial crystallites act as a template for the growth of the WA α-Fe₂O₃ grains.     

Crystallization of bismuth titanate and bismuth silicate grown as thin films by atomic layer deposition

Bismuth silicate and bismuth titanate thin films were deposited by atomic layer deposition (ALD). A novel approach with pulsing of two Bi-precursors was studied to control the Si/Bi atomic ratio in bismuth silicate thin films. The crystallization of compounds formed in the Bi₂O₃–SiO₂ and Bi₂O₃–TiO₂ systems was investigated. Control of the stoichiometry of Bi–Si–O thin films was studied when deposited on Si(1 0 0) and crystallization was studied for films on sapphire and MgO-, ZrO₂- and YSZ-buffered Si(1 0 0). The Bi–Ti–O thin films were deposited on Si(1 0 0) substrate. Both Bi–Si–O and Bi–Ti–O thin films were amorphous after deposition. Highly a-axis oriented Bi₂SiO₅ thin films were obtained when the Bi–Si–O thin films deposited on MgO-buffered Si(1 0 0) were annealed at 800 °C in nitrogen. The full-width half-maximum values for 200 peak were also studied. An excess of bismuth was found to improve the crystallization of Bi–Ti–O thin films and the best crystallinity was observed with Ti/Bi atomic ratio of 0.28 for films annealed at nitrogen at 1000 °C. Roughness of the thin films as well as the concentration depth distribution were also examined.     

ZnO growth on Si with low-temperature ZnO buffer layers by ECR-assisted MBE

High-quality ZnO films were grown on Si(1 0 0) substrates with low-temperature (LT) ZnO buffer layers by an electron cyclotron resonance (ECR)-assisted molecular-beam epitaxy (MBE). In order to investigate the optimized buffer layer temperature, ZnO buffer layers of about 1.1 μm were grown at different growth temperatures of 350, 450 and 550 °C, followed by identical high-temperature (HT) ZnO films with the thickness of 0.7 μm at 550 °C. A ZnO buffer layer with a growth temperature of 450 °C (450 °C-buffer sample) was found to greatly enhance the crystalline quality of the top ZnO film compared to others. The root mean square (RMS) roughness (3.3 nm) of its surface is the smallest, compared to the 350 °C-buffer sample (6.7 nm), the 550 °C-buffer sample (7.4 nm), and the sample without a buffer layer (6.8 nm). X-ray diffraction (XRD), photoluminescence (PL) and Raman scattering measurements were carried out on these samples at room temperature (RT) in order to characterize the crystalline quality of ZnO films. The preferential c-axis orientations of (0 0 2) ZnO were observed in the XRD spectra. The full-width at half-maximum (FWHM) value of the 450 °C-buffer sample was the narrowest as 0.209°, which indicated that the ZnO film with a buffer layer grown at this temperature was better for the subsequent ZnO growth at elevated temperature of 550 °C. Consistent with these results, the 450 °C-buffer sample exhibits the highest intensity and the smallest FWHM (130 meV) of the ultraviolet (UV) emission at 375 nm in the PL spectrum. The ZnO characteristic peak at 438.6 cm⁻¹ was found in Raman scattering spectra for all films with buffers, which is corresponding to the E₂ mode.     

Morphological and structural properties of InP/Gd2O3 nanowires grown by molecular beam epitaxy on silicon substrate

InP/Gd₂O₃ heterostructures have been prepared by molecular beam epitaxy of Gd₂O₃ on InP nanowires grown on silicon substrates by molecular beam epitaxy assisted with the vapor–liquid–solid method. Transmission electron microscopy showed Gd₂O₃ nanocrystals, having diameters between 3 and 7 nm, decorating the sidewalls of InP nanowires. No epitaxial relationship was observed between Gd₂O₃ nanocrystals and InP nanowires due an amorphous interfacial layer. Depending on the Gd₂O₃ growth temperature, two morphologies have been highlighted. For Gd₂O₃ grown at 30 °C, anisotropic heterostructures made of oxide nanocrystals covering just one side of the nanowires were observed, while at 250 °C Gd₂O₃/InP core/shell nanowires were identified.     

Effect of tellurium deposition rate on the properties of Cu–In–Te based thin films and solar cells

To investigate the effects of tellurium (Te) deposition rate on the properties of Cu–In–Te based thin films (Cu/In=0.30–0.31), the films were grown on both bare and Mo-coated soda-lime glass substrates at 200 °C by co-evaporation using a molecular beam epitaxy system. The microstructural properties were examined by means of scanning electron microscopy and X-ray diffraction. The crystalline quality of the films was improved with increase in the deposition rate of Te, and exhibited a single CuIn₃Te₅ phase with a highly preferred (1 1 2) orientation. Te-deficient film (Te/(Cu+In)=1.07) grown with a low Te deposition rate showed a narrow bandgap of 0.99 eV at room temperature. The solar cell performance was affected by the deposition rate of Te. The best solar cell fabricated using CuIn₃Te₅ thin films grown with the highest deposition rate of Te (2.6 nm/s) yielded a total area (0.50 cm²) efficiency of 4.4% (V_oc=309 mV, J_sc=28.0 mA/cm², and FF=0.509) without light soaking.     

High quality MOCVD GaN film grown on sapphire substrates using HT-AlN buffer layer

In this work we report on the growth and characterization of high quality MOCVD GaN film grown on Al₂O₃ substrates by using a HT (>1150 °C)-AlN buffer layer. We have investigated the most favorable growth conditions in terms of temperature, thickness and growth rate of AlN buffer layer in order to optimize the high temperature GaN layer. The improved morphological and structural properties of GaN layer were verified by AFM and XRD measurements. The optimized GaN layer presents a smooth surface with a rms value of 1.4 Å. The full width at half maximum (FWHM) for 800 nm thick GaN films is 144″. Furthermore PL measurements and C–V analysis confirm that in GaN layer grown on HT-AlN buffer layer defect density is drastically reduced.     

Growth and characterization of GaN and AlN films on (1 1 1) and (0 0 1) Si substrates

GaN and AlN films were grown on (1 1 1) and (0 0 1) Si substrates by separate admittances of trimethylgallium (or trimethylaluminum) and ammonia (NH₃) at 1000°C. A high temperature (HT) or low temperature (LT) grown AlN thin layer was employed as the buffer layer between HT GaN (or HT AlN) film and Si substrate. Experimental results show that HT AlN and HT GaN films grown on the HT AlN-coated Si substrates exhibit better crystalline quality than those deposited on the LT AlN-coated Si substrates. Transmission electron microscopy (TEM) of the HT GaN/HT AlN buffer layer/(1 1 1)Si samples shows a particular orientation relationship between the (0 0 0 1) planes of GaN film and the (1 1 1) planes of Si substrate. High quality HT GaN films were achieved on (1 1 1) Si substrates using a 200 Å thick HT AlN buffer layer. Room temperature photoluminescence spectra of the high quality HT GaN films show strong near band edge luminescence at 3.41 eV with an emission linewidth of ∼110 meV and weak yellow luminescence.     

Fabrication and characterization of transparent conductive ZnO:Al thin films prepared by direct current magnetron sputtering with highly conductive ZnO(ZnAl2O4) ceramic target

Using a highly conductive ZnO(ZnAl₂O₄) ceramic target, c-axis-oriented transparent conductive ZnO:Al₂O₃ (ZAO) thin films were prepared on glass sheet substrates by direct current planar magnetron sputtering. The structural, electrical and optical properties of the films (deposited at different temperatures and annealed at 400°C in vacuum) were characterized with several techniques. The experimental results show that the electrical resistivity of films deposited at 320°C is 2.67×10⁻⁴ Ω cm and can be further reduced to as low as 1.5×10⁻⁴ Ω cm by annealing at 400°C for 2 h in a vacuum pressure of 10⁻⁵ Torr. ZAO thin films deposited at room temperature have flaky crystallites with an average grain size of ∼100 nm; however those deposited at 320°C have tetrahedron grains with an average grain size of ∼150 nm. By increasing the deposition temperature or the post-deposition vacuum annealing, the carrier concentration of ZAO thin films increases, and the absorption edge in the transmission spectra shifts toward the shorter wavelength side (blue shift).     

Morphology and crystal structure of A1-doped TiO2 nanoparticles synthesized by vapor phase oxidation of titanium tetrachloride

Al-doped titanium dioxide nanoparticles with precisely controlled characteristics were synthesized in an aerosol reactor between 900 °C and 1500 °C by vapor-phase oxidation of titanium tetrachloride. The effect of process variables (reactor temperature, initial TiCl₄ concentration, residence time and feeding temperature of oxygen) on particle morphology and phase characteristics was investigated using TEM, XRD, EDS, ICP and XPS, etc. The average particle size increased with decreasing oxygen feeding temperature and increasing reaction temperature, residence time and TiCl₄ concentration. The presence of aluminum during gas phase reaction increased the rate of phase transformation from anatase to rutile and altered the particle morphology from polyhedral to irregular crystals. TiO₂ and Al₂O₃ co-precipitated during particle formation which lead to the aluminum solid solution in titania. α-Al₂O₃ and Al₂TiO₅ were observed at AlCl₃/TiCl₄ ratios higher than 1.1 and reactor temperatures in excess of 1400 °C. The rutile content, which increased with increasing Al/Ti ratio and residence time, was at a maximum at about 1200 °C and decreased at both lower and higher reactor temperatures.     

Epitaxial growth of the metastable phase ytterbium monoxide on gallium nitride surfaces

Molecular beam deposition systems allow for unparalleled control of film composition and structure. This article addresses the capacity for controlling metal and oxidant fluxes in the Yb/O₂ system to access the metastable phase ytterbium monoxide (YbO). Experiments exploring the growth of polycrystalline YbO_x films by molecular beam deposition demonstrate that a 2:1 molar ratio of Yb:O₂ fluxes is necessary to achieve preferential growth of the divalent oxide. Applying similar deposition conditions to a (0 0 1) GaN surface leads to the growth of epitaxial (1 1 1) YbO films. Similar to other rocksalt oxides grown on GaN surfaces, YbO films display a 3D growth mechanism that leads to a grainy morphology with crystallites of 50 nm lateral dimensions. Rocking curves in ω and φ have full-width half-maximum values of 1.77° and 4.1°, respectively; further improvements in crystal quality appear to be limited by the thermal stability of the YbO phase.     

Crystallization of a niobium phosphate glass

Niobium phosphate glasses with composition 37P₂O₅ · 23K₂O · 40Nb₂O₅ are stable in relation to crystallization during the heating process, exhibit a low critical cooling rate, and are potentially good for nuclear wasteforms. The crystallization of these glasses was evaluated by optical microscopy after proper heat treatments, showing that surface crystallization is the main process occurring during the heat treatment. Two main crystalline phases were observed. These crystalline phases were KNb₃O₈ and K₃NbP₂O₉. Surface crystal growth rates were measured in the temperature range of 806–972 °C (T_g = 683 °C) for both crystalline phases. Apparent crystallization enthalpies were determined through the Arrhenius plots of lnU vs. 1/T. The enthalpies are 496 kJ/mol and 513 kJ/mol for each crystalline phase, respectively. The surface density of nucleation sites (N_s) on 3 μm diamond paste polished surfaces is (2.4 ± 0.7) × 10⁸ nuclei/m² for one crystalline phase and (9.8 ± 0.8) × 10⁹ nuclei/m² for the other crystalline phase, when revealed at 838 °C/17.5 h, and these values show a slight variation depending on the time and the temperature. At the tested temperatures, only one crystal phase appeared inside the volume, and a volume density of nucleation sites N_v = 5 × 10⁶ nuclei/m³ was measured.     

Platinum-catalyst-assisted metalorganic vapor phase epitaxy of InN

This paper reports the first attempt of the Pt-catalyst-assisted MOVPE growth of InN. In order to enhance NH₃ decomposition at a relatively low growth temperature (～550 °C), Pt is used as a catalyst. The catalyst is installed in the NH₃ introduction tube in the MOVPE reactor and the tube is located just above the susceptor to be heated. Compared with InN films grown without the catalyst, the samples grown with Pt catalyst show improved electrical properties; a carrier concentration in the order of 10¹⁸ cm^?3 and a Hall mobility as high as 1350 cm²/Vs are obtained. The crystalline quality is also improved by employing the catalyst and a tilt fluctuation as low as 8.6 arcmin is obtained for a sample grown on a GaN/sapphire template. It is confirmed that for InN films grown at 550 °C with Pt catalyst, the electrical and crystallographic properties are also improved with increase in thickness. These results indicate that the growth at around 550 °C with the Pt catalyst is performed under the circumstances where NH₃ is effectively decomposed, whereas the deterioration of InN during growth is significantly suppressed.     

BaO–B2O3–SiO2–Al2O3 sealing glass for intermediate temperature solid oxide fuel cell

Glasses in the formulation close to BaSiO₃–BaB₂O₄ eutectic compound are developed for sealing of intermediate-temperature (500–650 °C) solid oxide fuel cell (IT-SOFC). Thermal and microstructural analyses of the glasses with 0–10 mol% Al₂O₃ are also conducted. Detailed crystallization kinetics and interfacial stability of the glass in contact with yttria-stabilized zirconia (YSZ) and samaria-doped ceria (SDC) are investigated and compared. The results show that the formulation, 47BaO–21B₂O₃–27SiO₂–5Al₂O₃ (G1A5), performs the best on glass forming ability (GFA) among all tested formulations, and shows matched thermal expansion and working temperature to CeO₂-based electrolytes of IT-SOFC. Two major crystalline phases that precipitate from G1A5 above 750 °C are platy hexacelsian and BaSiO₃ grains.