Grain boundary defects induced room temperature ferromagnetism in V doped ZnO thin films

Vanadium (V) doped ZnO thin films (Zn_1‐xV_x O, where x = 0, 0.05, 0.10) have been grown on sapphire substrates by RF magnetron sputtering to realize room temperature ferromagnetism (RTFM). The grown films have been subjected to X‐ray diffraction (XRD), resonant Raman scattering, photoluminescence (PL) and vibrating sample magnetometer (VSM) measurements to investigate their structural, optical and magnetic properties, respectively. The full width at half maximum of XRD and Raman scattering peaks increases with V ion concentration indicates that the V ions have been substituted on Zn²⁺ ions in the ZnO matrix. The increase in oxygen vacancies with V concentration is evidenced by PL measurements. Rutherford backscattering spectrometry analysis confirms the presence of the V ions in the films. The room temperature VSM measurements reveal the signature of ferromagnetism in V doped ZnO thin films. It has been observed that the grain boundary defects, i.e., oxygen vacancies play a crucial role in inducing RTFM in V doped ZnO films. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Optical and magnetic properties of Nd‐doped ZnO nanoparticles

Nd‐doped ZnO nanoparticles with different concentration were synthesized by sol‐gel method. The structures, magnetic and optical properties of as‐synthesized nanorods were investigated. X‐ray diffraction (XRD) and x‐ray photoelectron spectroscopy (XPS) results demonstrated that Nd ions were incorporated into ZnO lattice; but Zn_1‐xNd_xO nanoparticles with Nd concentration of x = 0.05 showed Nd₂O₃ phase, so the saturation concentration of Nd in Zn_1‐xNd_xO is less than 5 at%. Vibrating sample magnetometer (VSM) measurements indicated that Nd doped ZnO possessed dilute ferromagnetis behaviour at room temperature. Photoluminescence spectroscopy (PL) showed that Nd ions doping induced a red slight shift and decrease in UV emission with increase of Nd concentration.     

Structural and optoelectrical properties of Ga‐doped ZnO semiconductor thin films grown by magnetron sputtering

Transparent conductive gallium‐doped zinc oxide (Ga‐doped ZnO) films were prepared on glass substrate by magnetron sputtering. The influence of substrate temperature on structural, optoelectrical and surface properties of the films were investigated by X‐ray diffraction (XRD), X‐ray photoelectron spectroscopy (XPS), spectrophotometer, four‐point probe and goniometry, respectively. Experimental results show that all the films are found to be oriented along the c‐axis. The grain size and optical transmittance of the films increase with increasing substrate temperature. The average transmittance in the visible wavelength range is above 83% for all the samples. It is observed that the optoelectrical property is correlated with the film structure. The Ga‐doped ZnO film grown at the substrate temperature of 400 °C has the highest figure of merit of 1.25 × 10⁻² Ω⁻¹, the lowest resistivity of 1.56 × 10⁻³ Ω·cm and the highest surface energy of 32.3 mJ/m².     

Structural and magnetic studies of Mn‐doped ZnO

The bulk samples of Mn‐doped ZnO were synthesized with the nominal compositions Zn_1‐xMn_xO (x = 0.02, 0.05, 0.10, 0.15) by the solid‐state reaction and sol‐gel methods. In both the methods the samples were finally sintered at ∼700 °C in air. The X‐ray diffraction (XRD) studies of the samples synthesized by the solid‐state reaction method exhibit the presence of wurtzite (hexagonal) crystal structure similar to the parent compound (ZnO) in all the samples, suggesting that doped Mn ions sit at the regular Zn sites. However, same studies spread over the samples with Mn content ≥5% and synthesized by the sol‐gel method reveal the occurrence of some secondary phase in addition to the majority wurtzite phase. The magnetic measurements by vibrating sample magnetometer (VSM) clearly indicate ferromagnetic interaction at room temperature in all the samples. The Curie temperatures (T_c) and magnetization vary with concentration of Mn ions in the samples. However, the samples synthesized by sol‐gel method were found to have lower Tc values and also lower magnetization as compared to the corresponding samples synthesized by solid‐state reaction method. It could possibly be due to the presence of antiferromagnetic islands and smaller crystallite sizes in the samples prepared by sol‐gel method. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Thickness and substrate orientation dependence of ferromagnetism in Mn doped ZnO thin films

The effect of film thickness and substrate orientation on ferromagnetism in Mn doped ZnO thin films have been studied. The Mn doped ZnO films of different thickness (15, 35 and 105 nm) have been grown on both Si (100) and Si (111) substrates. The structural, electrical, optical, elemental and magnetic properties of the films have been investigated by X‐ray diffraction (XRD), Hall Effect measurements, photoluminescence (PL), energy dispersive spectroscopy (EDS) and vibrating sample magnetometer (VSM), respectively. It is found that all the properties are strongly influenced by the film thickness and substrate orientation. The XRD analysis confirmed that the formation of high quality monophasic hexagonal wurtzite structure for all the grown films. The room temperature VSM measurements showed that the films of lower thickness have better ferromagnetism than that of the thicker films grown on both the substrates. Among the lower thickness films, the film grown on Si (111) substrate has higher saturation magnetization (291×10^‐5 emu cm^‐3) due to high density of the defects. The observed ferromagnetism has been well justified by XRD, Hall measurements and PL. The presence of Mn atoms in the film has been confirmed by EDS. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Role of oxygen vacancies in the origin of ferromagnetism in Mn‐doped ZnO

The relationship between the oxygen vacancy and ferromagnetism in Mn‐doped ZnO has been studied based on the first‐principles calculations. Three possible charge states of oxygen vacancies, i.e., neutral (V_O⁰), 1+ (V_O¹⁺) and 2+ (V_O²⁺) are considered. Results show that the lattice relaxations around oxygen vacancies are large difference under different charge states. It is found that V_O¹⁺ and V_O²⁺ oxygen vacancies induce ferromagnetism. However, Mn‐doped ZnO system shows ferromagnetism with V_O⁰ oxygen vacancies in hydrogenated environment, the ferromagnetism is attributed to the interstitial H, which forms a bridge bond and mediates d ‐d coupling and stabilizes the ferromagnetic state. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structural Characteristics of Er Doped LiNbO3 Thin Films Grown by the Liquid Phase Epitaxy Method

Erbium (Er³⁺) doped LiNbO₃ single crystal thin films have been grown LiNbO₃ (001) substrate by the liquid phase epitaxy method. The crystallinity was determined by high‐resolution X‐ray diffraction. The lattice mismatch between Er³⁺ doped LiNbO₃ films and LiNbO₃ (001) substrate was investigated by X‐ray rocking curve analysis. Also we studied the structural characteristics of Er³⁺ doped LiNbO₃ films and surface morphology dependent on the film thickness.     

Effect of Cr doping on the structural and optical properties of ZnS nanoparticles

Zn_1−xCr_x S nanoparticles with x = 0.00, 0.005, 0.01, 0.02 and 0.03 were synthesized by chemical co‐precipitation method at room temperature for the first time. Ethylene diamine tetraacetic acid was used as stabilizer. Energy dispersive analysis of X‐rays confirmed the presence of Cr in the samples. The samples were characterized by scanning electron microscopy, X‐ray diffraction (XRD), transmission electron microscopy and optical absorption studies. XRD and selected area electron diffraction results showed that the samples of all compositions crystallized in cubic structure and the lattice parameters decreased linearly with increase in Cr content following Vegard's law indicating that the Cr ions have substituted for Zn in the ZnS lattice. The particle size estimated from XRD was in the range 6–10 nm.The optical absorption studies on the doped samples indicated that the absorption edge blue shifted with respect to those of bulk and nanocrystalline ZnS. The bandgap increased with increasing Cr concentration in a narrow range 3.81–4.03 eV. Photolumonesence studies showed blue emission with appreciable luminescence quenching with increasing Cr concentration. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structural,Raman, and photoluminescence properties of double‐shelled coaxial nanocables of In2O3 core with ZnO and AZO shells

We synthesized In₂O₃/ZnO/Al‐doped ZnO (AZO) core‐double shell nanowires, in which the inner shell (ZnO) and the outer shell (AZO) have been subsequently deposited on the core In₂O₃ nanowires. With their one‐dimensional morphology being preserved, the X‐ray diffraction (XRD), lattice‐resolved transmission electron microscopy (TEM) image, selected area electron diffraction, and Raman spectrum coincidentally revealed that the shell was comprised of hexagonal ZnO phase. In addition, TEM‐EDX investigation revealed the presence of Al elements in the shell region. The thermal annealing at 700 °C did not significantly change the nanowire morphology, however, the XRD spectrum indicated that the ZnO phase was crystallized by the annealing. PL spectrum of the 700 °C‐annealed In₂O₃/ZnO/AZO core‐double shell nanowires was comprised of three Gaussian bands at approximately 2.1 eV, 2.4 eV, and 3.0 eV, respectively. The integrated intensities of 2.1 eV‐, 2.4 eV‐, and 3.0 eV‐bands were decreased by the thermal annealing. This study will pave the road to the preparation and applicaition of double‐shelled nanowires. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Properties of Co‐doped ZnO films prepared by electrochemical deposition

We prepared Co‐doped ZnO films by the electrochemical deposition. X‐ray diffraction (XRD), high resolution transmission microscopy (HRTEM), x‐ray photoelectron spectroscopy (XPS), atomic force microscope (AFM), x‐ray absorption near‐edge structure (XANES), vibrating sample magnetometer (VSM), optical absorption, and photoluminescence (PL) measurements were carried out on the samples. The results showed Co atoms substituted Zn atoms in the ZnO lattice without the formation of the impurity phase. VSM measurements showed the ferromagnetic properties for the Co‐doped ZnO samples. When the Co doping concentration increased, the band gaps were widened and the PL peak positions shifted towards the short wavelength direction. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Synthesis and characterization of doped lithium aluminate nanocrystalline particles by sol‐gel method

Nanocrystalline particles of Co²⁺doped lithium aluminate (Co²⁺:LAO) and Ni²⁺‐doped lithium aluminate (Ni²⁺:LAO) were synthesized by sol–gel method. The crystalline nature and particle size of the samples were characterized by X‐ray diffraction analysis (XRD). The morphology and the presence Co²⁺ and Ni²⁺ in the synthesized samples were analyzed by scanning electron microscope (SEM) and energy dispersive X‐ray analysis (EDAX). The presences of functional groups in the samples were analyzed using FT‐IR analysis. The optical absorbance of the synthesized samples were observed using UV absorption spectral analysis. The frequency dependent dielectric behaviour of the synthesized nano materials was analyzed. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Characterization of ZnO nanorods grown on Si substrates coated with NiCl2

ZnO nanorods were synthesized on NiCl₂‐coated Si substrates via a chemical vapor deposition (CVD) process. The as‐fabricated nanorods with diameters ranging from 150 nm to 200 nm and lengths up to several tens of micrometers grew preferentially arranged along [0001] direction, perpendicular to the (0002) plane. The clear lattice fringes in HRTEM image demonstrated the growth of good quality hexagonal single‐crystalline ZnO. Room temperature photoluminescence (PL) spectra illustrated that the ZnO nanorods exhibit strong UV emission peak and green emission peak, peak centers located at 388 nm and 506 nm. A possible growth mechanism based on the study of our X‐ray diffraction (XRD), electron microscopy and PL spectroscopy was proposed, emphasizing the effect of NiCl₂ solution (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and characterization of large La1‐xPbxMnO3+δ (x=0.32–0.35) crystals

Large crystals of La_0.63Pb_0.37Mn O_3+δ with small La(Pb)‐ deficiency of about 0.005‐0.01 at.% were grown by high temperature solution growth method. The structure of the grown crystals was determined as rhombohedral with R‐3 space group by single‐crystal X‐ray diffractometry. The surface morphology of the crystals and the exact chemical composition was examined by scanning electron microscopy and energy dispersive X‐ray analysis methods, respectively. The IR‐transmission spectrum reveals the presence of Mn³⁺O₆‐ and Mn⁴⁺O₆‐ octahedra in the lattice of La_0.63Pb_0.37Mn O_3+δ crystals. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Fast synthesis of Cu‐doped ZnO nanosheets at ambient condition

A new, fast and low cost method to produce Cu‐doped ZnO nanosheets is reported for the first time in this paper. Zinc foil specimens were immersed into CuSO₄ aqueous solutions with various concentrations for 3 seconds and then dried at ambient condition. The immersed specimens were characterized with a scanning electron microscope, an X‐ray diffractometer and a transmission electron microscope. The results show that Cu‐doped ZnO nanosheets with a multilayer structure on a cupper layer are formed. Cu‐doped ZnO nanosheets show hexagonal crystalline structure and comprises polycrystalline grains with diameters of 5∼10 nm. A physical modal is suggested to explain the prepared Cu‐doped ZnO nanosheet structure, based on the chemical reactions and a metallurgical cell.     

Low temperature hydrothermal growth and optical properties of ZnO nanorods

Well‐faceted hexagonal ZnO nanorods have been synthesized by a simple hydrothermal method at relative low temperature (90°C) without any catalysts or templates. Zinc oxide (ZnO) nanorods were grown in an aqueous solution that contained Zinc chloride (ZnCl₂, Aldrich, purity 98%) and ammonia (25%). Most of the ZnO nanorods show the perfect hexagonal cross section and well‐faceted top and side surfaces. The diameter of ZnO nanorods decreased with the reaction time prolonging. The samples have been characterized by X‐ray powder diffraction (XRD) and scanning electron microscopy (SEM) measurement. XRD pattern confirmed that the as‐prepared ZnO was the single‐phase wurtzite structure formation. SEM results showed that the samples were rod textures. The surface‐related optical properties have been investigated by photoluminescence (PL) spectrum and Raman spectrum. Photoluminescence measurements showed each spectrum consists of a weak band ultraviolet (UV) band and a relatively broad visible light emission peak for the samples grown at different time. It has been found that the green emission in Raman measurement may be related to surface states. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Optical and dielectric studies on pure and Ni2+, Co2+ doped single crystals of bis thiourea cadmium chloride

Good quality single crystals of Ni²⁺, Co²⁺ ions doped Bisthiourea Cadmium Chloride (BTCC) are some of the excellent and efficient non‐linear optical materials grown from aqueous solution by slow evaporation method. The lattice parameters of the grown crystals are determined by single crystal X‐ray analysis. UV spectral analyses on these samples reveal the improved transparency of the doped crystals ascertaining the inclusion of metal ion in the lattice. FTIR spectral analysis carried out on the materials confirm the presence of functional groups. Dielectric measurements reveal that the dielectric constant of pure and doped crystals decreases with increase of frequency. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structural properties of Zn1–xMgxO nanomaterials prepared by sol‐gel method

The mixed oxides Zn_1‐xMg_xO (ZMO) were prepared as nano‐polycrystalline powders and thin films by a simple sol–gel process and dip coating method. Thermogravimetric (TG) and differential thermal analysis (DTA) were used to study the thermal chemistry properties of dried gel. Structural and microstructural analysis was carried out applying x‐ray diffraction (XRD) and Rietveld method. Analysis showed that for x < 0.25, Mg replaces Zn substitutionally yielding ZMO single phase, while for x ≥ 0.25 two phases are identified ZMO and MgO. Replacing Zn²⁺ by Mg²⁺ distorts the cation tetrahedrons and decreases the lattice constants ratio c/a of the wurtzite ZMO which deviate the lattice gradually from the hexagonal structure as Mg⁺² increases. These distortions are attributed to the difference in electronic configuration of the two cations which suppress the paraelectric‐ferroelectric phase transition in the ZMO wurtzite. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Temperature dependence of growth orientation and surface morphology of Li‐doped ZnO thin films on SiO2/Si substrates

ZnO thin films doped with Li (ZnO:Li) were deposited onto SiO₂/Si (100) substrates by direct‐current sputtering technique in the temperature range from room temperature to 500 °C. The crystalline structure, surface morphology and composition, and optical reflectivity of the deposited films were studied by X‐ray diffraction (XRD), Scanning Electron Microscopy (SEM), X‐ray Photoelectron Spectroscopy (XPS) and optical reflection measurements. Rough surface p‐type ZnO thin film deposition was confirmed. The results indicated that the ZnO:Li films growed at low temperatures show c‐axis orientation, while a‐axis growth direction is preferable at high temperatures. Moreover, the optical reflectivity from the surface of the films matched very well with the obtained results. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Microstructural and optoelectrical properties of transparent conducting ZnO:Al thin films for organic solar cells

The Al‐doped zinc oxide (ZnO:Al) thin films were grown on glass substrates by the magnetron sputtering technique. The films were characterized with X‐ray diffractometer, four‐point probe and optical transmission spectroscopy, respectively. The dependence of microstructural, electrical and optical properties on deposition temperature was investigated. The results show that all the films have hexagonal wurtzite structure with highly c‐axis orientation. And the microstrural and optoelectrical properties of the films are observed to be subjected to the deposition temperature. The ZnO:Al film prepared at the deposition temperature of 650 K possesses the best optoelectrical properties, with the lowest electrical resistivity (6.1×10⁻⁴ Ω·cm), the highest average visible transmittance (85.3%) and the maximum figure of merit (0.41 Ω⁻¹). The optical energy gap of the films was estimated from Tauc's law and observed to be an increasing tendency with the increment of the deposition temperature. Furthermore, the refractive index of the films was determined by the optical characterization methods and the dispersion behavior was studied by the single electronic oscillator model.     

Optical and Photocatalytic properties of Mn‐doped CuO nanosheets prepared by hydrothermal method

Mn‐doped CuO nanosheets were prepared through a hydrothermal method to enhance their photocatalytic property. The structural and morphological features were monitored by using X‐Ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) with energy dispersive spectroscopy (EDS). UV‐vis absorption spectra showed the enhance absorption performance both in UV and visible light region. The band gaps were also calculate and the minimum value was 1.25 eV. The photocatalytic activity was investigated by the degradation of methylene blue (MB), which indicated that the photoactivity of samples depended on the amount of Mn²⁺ incorporated into the CuO lattice. The improved performance of photocatalysts can be attributed to enhanced light absorption and lower electron‐hole recombination.