Micro‐Raman investigation of transition‐metal‐doped ZnO nanoparticles

We measured the Raman spectra of ZnO nanoparticles (ZnO‐NPs), as well as transition‐metal‐doped (5% Mn(II), Fe(II) or Co(II)) ZnO nanoparticles, with an average size of 9 nm. A typical Raman peak at 436 cm⁻¹ is observed in the ZnO‐NPs, whereas Zn_1−xMn_xO, Zn_1−xFe_xO and Zn_1−xCo_xO presented characteristic peaks at 661, 665 and 675 cm⁻¹, respectively. These peaks can be related to the formation of Mn₃O₄, Fe₃O₄ and Co₃O₄ species in the doped ZnO‐NPs. Moreover, these samples were analyzed at various laser powers. Here, we observed new vibrational modes (512, 571 and 528 cm⁻¹), which are specific to Mn, Fe and Co dopants, respectively, and ZnO‐NPs did not reveal any additional modes. The new peaks were interpreted either as disorder activated phonon modes or as local vibrations of Mn‐, Fe‐ and Co‐related complexes in ZnO. Copyright © 2007 John Wiley & Sons, Ltd.     

Multiphonon resonant Raman scattering in N‐doped ZnO

Multiphonon resonant Raman scattering in N‐doped ZnO films was studied, and an enhancement of the resonant Raman scattering process as well as longitudinal optical (LO) phonon overtones up to the sixth order were observed at room temperature. The resonant Raman scattering intensity of the 1LO phonon in N‐doped ZnO appears three times as strong as that of undoped ZnO, which mainly arises from the defect‐induced Raman scattering caused by N‐doping. The nature of the 1LO phonon at 578 cm⁻¹ is interpreted as a quasimode with mixed A₁ and E₁ symmetry because of the defects formed in the ZnO lattice. In addition, the previously neglected impurity‐induced two‐LO‐phonon scattering process was clearly observed in N‐doped ZnO. Copyright © 2009 John Wiley & Sons, Ltd.     

Pressure‐induced anomalous phase transformation in nano‐crystalline dysprosium sesquioxide

The phase transformation in nano‐crystalline dysprosium sesquioxide (Dy₂O₃) under high pressures is investigated using in situ Raman spectroscopy. The material at ambient was found to be cubic in structure using X‐ray diffraction (XRD) and Raman spectroscopy, while atomic force microscope (AFM) showed the nano‐crystalline nature of the material which was further confirmed using XRD. Under ambient conditions the Raman spectrum showed a predominant cubic phase peak at 374 cm⁻¹, identified as F_g mode. With increase in the applied pressure this band steadily shifts to higher wavenumbers. However, around a pressure of about 14.6 GPa, another broad band is seen to be developing around 530 cm⁻¹ which splits into two distinct peaks as the pressure is further increased. In addition, the cubic phase peak also starts losing intensity significantly, and above a pressure of 17.81 GPa this peak almost completely disappears and is replaced by two strong peaks at about 517 and 553 cm⁻¹. These peaks have been identified as occurring due to the development of hexagonal phase at the expense of cubic phase. Further increase in pressure up to about 25.5 GPa does not lead to any new peaks apart from slight shifting of the hexagonal phase peaks to higher wavenumbers. With release of the applied pressure, these peaks shift to lower wavenumbers and lose their doublet nature. However, the starting cubic phase is not recovered at total release but rather ends up in monoclinic structure. The factors contributing to this anomalous phase evolution would be discussed in detail. Copyright © 2010 John Wiley & Sons, Ltd.     

Origin of the Raman mode at 379 cm−1 observed in ZnO thin films grown on sapphire

In this work, we present a detailed Raman scattering study to clarify the origin of the mode at 379 cm⁻¹ which is observed in Raman spectra of the ZnO films grown on c‐sapphire substrates and generally attributed to the A₁‐transverse optical (A₁‐TO) mode of ZnO. The studied ZnO films were deposited by metal‐organic chemical vapor deposition on c‐sapphire and (0001) ZnO substrates. In the z(−,−)z̄ backscattering configuration, the A₁‐TO mode is forbidden, while the 379 cm⁻¹ peak is still observed in the as‐deposited film grown on sapphire substrate. However, this mode is not observed in Raman spectra of the as deposited film grown on ZnO substrate. We suggest that the peak at 379 cm⁻¹ is the E_1g mode of the sapphire substrate which is allowed in z(−,−)z̄ backscattering configuration. The effects of annealing, the substrate and the collection cross‐section on Raman active modes were analyzed. Copyright © 2011 John Wiley & Sons, Ltd.     

Effects of Mn‐doping on surface acoustic wave properties of ZnO films

Surface acoustic wave (SAW) filters based on Mn‐doped ZnO films have been fabricated and effects of Mn‐doping on SAW properties are investigated. It is found that the electromechanical coupling coefficient (K²) of Zn_0.913Mn_0.087O films is 0.73 ± 0.02%, which is 73.8% larger than that of undoped ZnO films (0.42 ± 0.02%). Zn_0.913Mn_0.087O film filters also exhibit a lower absolute value of insertion loss (|IL|) of 16.1 dB and larger bandwidth (BW) of 5.9 MHz compared with that of undoped ZnO film filter. However, Zn_0.952Mn_0.048O film filters exhibit a smaller K² of 0.34 ± 0.02%, larger |IL| of 26.9 dB and smaller BW of 3.5 MHz. It is suggested that the SAW properties can be improved by appropriate Mn‐doping and Mn–ZnO/Si multilayer structure with large d₃₃ is promising for wide‐band and low‐loss SAW applications. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

OctTES/TEOS system for hybrid coatings: real‐time monitoring of the hydrolysis and condensation by Raman spectroscopy

The hybrid organic–inorganic system Tetra‐ethyl‐ortho‐silicate functionalized with Octyl‐triethoxy‐silane, studied as protective coating for the preservation of historical glasses from the environmental weathering agents, has been characterized by Raman spectroscopy by monitoring the sol‐gel reactions over time through characteristic features in the spectrum. In particular, for the hydrolysis reaction the disappearance of the 653 cm⁻¹ (Si‐O symmetric breathing) and 810 cm⁻¹ (CH₂ rocking in Si‐alkoxides) peaks and the growth of the 710 cm⁻¹ band, because of hydrolyzed alkyl‐silane, and of the 881 cm⁻¹ peak (ethanol C–C symmetric stretching) have been checked. Moreover, the condensation reaction can be tracked by the disappearance of the two main peaks of the alcohols at 816 and 881 cm⁻¹, going along with the growth of the broad band between 250 and 500 cm⁻¹ (Si–O–Si symmetric bending) and of the feature at 840 cm⁻¹ (Si–O–Si stretching). At the end of the condensation process the Raman spectrum still displays spectral bands unique to the alkyl chain in Octyl‐triethoxy‐silane, in the 1330–1450 cm⁻¹ and 2725–3000 cm⁻¹ ranges. Copyright © 2016 John Wiley & Sons, Ltd.     

Cesium doped and undoped ZnO nanocrystalline thin films: a comparative study of structural and micro‐Raman investigation of optical phonons

Undoped and cesium‐doped zinc oxide (ZnO) thin films have been deposited on sapphire substrate (0001) using the sol–gel method. Films were preheated at 300 °C for 10 min and annealed at 600 and 800 °C for 1 h. The grown thin films were confirmed to be of wurtzite structure using X‐ray diffraction. Surface morphology of the films was analyzed using scanning electron microscopy. The photoluminescence (PL) spectra of ZnO showed a strong ultraviolet (UV) emission band located at 3.263 eV and a very weak visible emission associated with deep‐level defects. Cesium incorporation induced a blue shift of the optical band gap and quenching of the near‐band‐edge PL for nanocrystalline thin film at room temperatures because of the band‐filling effect of free carriers. A shift of about 10–15 cm⁻¹ is observed for the first‐order longitudinal‐optical (LO) phonon Raman peak of the nanocrystals when compared to the LO phonon peak of bulk ZnO. The UV resonant Raman excitation at RT shows multiphonon LO modes up to fifth order. Copyright © 2010 John Wiley & Sons, Ltd.     

Nature of some features in Raman spectra of hydroxyapatite‐containing materials

A very broad vibrational band ranging from 1000 up to 4000 cm⁻¹ and two relatively sharp bands at 5000 and 5027 cm⁻¹ are found in the Raman scattering spectrum of hydroxyapatite‐containing films obtained by gas detonation spray method. We developed a theoretical model that interprets the broad band as a result of strong interaction between the high‐frequency hydrogen bond vibrations and lattice phonons. Both sharp bands around 5000 cm⁻¹ are assigned to the overtones of v‐OH vibrations. Copyright © 2016 John Wiley & Sons, Ltd.     

Significantly reduced leakage currents in organic thin film transistors with Mn‐doped Bi2Ti2O7 high‐k gate dielectrics

We report the fabrication of organic thin‐film transistors (OTFTs) with high‐k gate dielectrics of Mn‐doped Bi₂Ti₂O₇ (BTO) films. 3% Mn‐doped BTO films deposited on polymer substrates by pulsed laser deposition at room temperature exhibit low leakage currents of 2.1 × 10^–8 A/cm² at an applied electric field of 0.3 MV/cm, while undoped BTO films show much higher leakage currents of 4.3 × 10^–4 A/cm². Mn doping effectively reduces the number of oxygen vacancies in the films and improves the electrical properties. Low operation voltage and significantly reduced leakage currents are demonstrated in pentacene‐based OTFTs with the Mn‐doped BTO gate dielectrics. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Raman spectroscopic study of the magnesium‐carbonate minerals—artinite and dypingite

Magnesium minerals are important in the understanding of the concept of geosequestration. The two hydrated hydroxy magnesium‐carbonate minerals artinite and dypingite were studied by Raman spectroscopy. Intense bands are observed at 1092 cm⁻¹ for artinite and at 1120 cm⁻¹ for dypingite, attributed ν₁ symmetric stretching mode of CO₃²⁻. The ν₃ antisymmetric stretching vibrations of CO₃²⁻ are extremely weak and are observed at 1412 and 1465 cm⁻¹ for artinite and at 1366, 1447 and 1524 cm⁻¹ for dypingite. Very weak Raman bands at 790 cm⁻¹ for artinite and 800 cm⁻¹ for dypingite are assigned to the CO₃²⁻ν₂ out‐of‐plane bend. The Raman band at 700 cm⁻¹ of artinite and at 725 and 760 cm⁻¹ of dypingite are ascribed to CO₃²⁻ν₂ in‐plane bending mode. The Raman spectrum of artinite in the OH stretching region is characterised by two sets of bands: (1) an intense band at 3593 cm⁻¹ assigned to the MgOH stretching vibrations and (2) the broad profile of overlapping bands at 3030 and 3229 cm⁻¹ attributed to water stretching vibrations. X‐ray diffraction studies show that the minerals are disordered. This is reflected in the difficulty of obtaining Raman spectra of reasonable quality, and explains why the Raman spectra of these minerals have not been previously or sufficiently described. Copyright © 2008 John Wiley & Sons, Ltd.     

Raman scattering studies of the magnetic ordering in hexagonal HoMnO3 thin films

We present the results of the temperature dependence of the Raman spectra of hexagonal HoMnO₃ thin films in the 13–300 K temperature range. The films were grown on Pt(111)//Al₂O₃ (0001) substrates using the laser ablation method. In the HoMnO₃ thin films, we initially observedseveral broad Raman peaks at ∼510, 760, 955, 1120, and 1410 cm⁻¹. These broad Raman peaks display an anomalous behavior near the magnetic transition temperature, and the intensity difference of the Raman spectra at different temperatures shows several pairs of negative and positive peaks as the temperature is lowered below the Néel temperature. Our analyses indicate that all the broad peaks are correlated with magnetic ordering, and we have assigned the origin of all the broad peaks. Purely on the basis of the Raman analysis, we have deduced the Néel temperature and the spin exchange integrals of HoMnO₃ thin films. We also investigated the effects of the growth condition on the strongest broad peak at ∼760 cm⁻¹, which is related with pure magnetic ordering. This result indicates that the oxygen defect in the HoMnO₃ sample has negligible effect on magnetic ordering. Copyright © 2009 John Wiley & Sons, Ltd.     

Structural studies and Raman spectroscopy of forbidden zone boundary phonons in Ni‐doped ZnO ceramics

We present X‐ray diffraction and Raman spectroscopy studies of Ni‐doped ZnO (Zn_1−xNi_xO, x = 0.0, 0.03, 0.06, and 0.10) ceramics prepared by solid‐state reaction technique. The presence of the secondary phase along with the wurtzite phase is observed in Ni‐doped ZnO samples. The E₂(low) optical phonon mode is seen to be shifted to a lower wavenumber with Ni incorporation in ZnO and is explained on the basis of force‐constant variation of ZnO bond with Ni incorporation. A zone boundary phonon is observed in Ni‐doped samples at ∼130 cm⁻¹ which is normally forbidden in the first‐order Raman scattering of ZnO. Antiferromagnetic ordering between Ni atoms via spin‐orbit mechanism at low temperatures (100 K) is held responsible for the observed zone boundary phonon. Copyright © 2008 John Wiley & Sons, Ltd.     

Visible,near‐infrared,and ultraviolet laser‐excited Raman spectroscopy of the monocytes/macrophages (U937) cells

Raman spectra of the monocytes were recorded with laser excitation at 532, 785, 830, and 244 nm. The measurements of the Raman spectra of monocytes excited with visible, near‐infrared (NIR), and ultraviolet (UV) lasers lad to the following conclusions. (1) The Raman peak pattern of the monocytes can be easily distinguished from those of HeLa and yeast cells; (2) Positions of the Raman peaks of the dried cell are in coincidence with those of the monocytes in a culture cell media. However, the relative intensities of the peaks are changed: the peak centered around 1045 cm⁻¹ is strongly intensified. (3) Raman spectra of the dead monocytes are similar to those of living cells with only one exception: the Raman peak centered around 1004 cm⁻¹ associated with breathing mode of phenylalanine is strongly intensified. The Raman spectra of monocytes excited with 244‐nm UV laser were measured on cells in a cell culture medium. A peak centered at 1485 cm⁻¹ dominates the UV Raman spectra of monocytes. The ratio I₁₅₇₄/I₁₆₁₃ for monocytes is found to be around 0.71. This number reflects the ratio between proteins and DNA content inside a cell and it is found to be twice as high as that of E. coli and 5 times as high as that of gram‐positive bacteria. Copyright © 2009 John Wiley & Sons, Ltd.     

Low‐temperature synthesis and Raman scattering of Mn‐doped ZnO nanopowders

Nanocrystalline Mn‐doped zinc oxides Zn_1−xMn_xO (x = 0–0.10) were synthesized by the sol–gel technique at low temperature. The calcination temperature of the as‐prepared powder was found at 350 °C using differential thermal analysis. A thermogravimetric analysis showed that there is a mass loss in the as‐prepared powder till 350 °C and an almost constant mass till 800 °C. The X‐ray diffraction patterns of investigated nanopowders calcined at 350 °C correspond to the hexagonal ZnO structure without any foreign impurities. The average grain size of the nanocrystal that was observed around ∼25–40 nm from transmission electron microscopy matched well with the crystallite size calculated from the line shape of X‐ray diffraction. The chemical bonding structure in Zn_1−xMn_xO nanopowders was examined using X‐ray photoelectron spectroscopy techniques, which indicate substitution of Mn²⁺ ions into Zn²⁺ sites in ZnO lattice. Micro Raman spectroscopy confirmed the insertion of Mn ions in the ZnO host matrix, and similar wurtzite structure of Zn_1−xMn_xO (x < 10%) nanocrystals. Temperature‐dependent Raman spectra of the nanocrystals displayed suppression of luminescence and enhancement in full width at half maximum in pure ZnO nanocrystals with increase in temperature, which suggests an enhancement in particle size at elevated temperature. Copyright © 2009 John Wiley & Sons, Ltd.     

Fast piezoresistive sensor and UV photodetector based on Mn‐doped ZnO nanorods

A low cost hydrothermal synthesis method to synthesize Mn‐doped ZnO nanorods (NRs) with controllable morphology and structure has been developed. Ammonia is used to tailor the ammonium hydroxide concentration, which provides a source of OH^– for hydrolysis and precipitation during the growth instead of HMT. The morphological, chemical composition, structural, and electronic structure studies of the Mn‐doped ZnO NRs show that the Mn‐doped ZnO NRs have a hexagonal wurtzite ZnO structure along the c‐axis and the Mn ions replace the Zn sites in the ZnO NRs matrix without any secondary phase of metallic manganese element and manganese oxides observed. The fabricated PEDOT:PSS/Zn_0.85Mn_0.15O Schottky diode based piezoresistive sensor and UV photodetector shows that the piezoresistive sensor has pressure sensitivity of 0.00617 kPa^–1 for the pressure range from 1 kPa to 20 kP and 0.000180 kPa^–1for the pressure range from 20 kPa to 320 kPa with relatively fast response time of 0.03 s and the UV photodetector has both relatively high responsivity and fast response time of 0.065 A/W and 2.75 s, respectively. The fabricated Schottky diode can be utilized as a very useful human‐friendly interactive electronic device for mass/force sensor or UV photodetector in everyday living life. This developed device is very promising for small‐size, low‐cost and easy‐to‐customize application‐specific requirements. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Thermo‐Raman spectroscopy of synthetic nesquehonite — implication for the geosequestration of greenhouse gases

Pure nesquehonite (MgCO₃·3H₂O)/Mg(HCO₃)(OH)·2H₂O was synthesised and characterised by a combination of thermo‐Raman spectroscopy and thermogravimetry with evolved gas analysis. Thermo‐Raman spectroscopy shows an intense band at 1098 cm⁻¹, which shifts to 1105 cm⁻¹ at 450 °C, assigned to the ν₁CO₃²⁻ symmetric stretching mode. Two bands at 1419 and 1509 cm⁻¹ assigned to the ν₃ antisymmetric stretching mode shift to 1434 and 1504 cm⁻¹ at 175 °C. Two new peaks at 1385 and 1405 cm⁻¹ observed at temperatures higher than 175 °C are assigned to the antisymmetric stretching modes of the (HCO₃)⁻ units. Throughout all the thermo‐Raman spectra, a band at 3550 cm⁻¹ is attributed to the stretching vibration of OH units. Raman bands at 3124, 3295 and 3423 cm⁻¹ are assigned to water stretching vibrations. The intensity of these bands is lost by 175 °C. The Raman spectra were in harmony with the thermal analysis data. This research has defined the thermal stability of one of the hydrous carbonates, namely nesquehonite. Thermo‐Raman spectroscopy enables the thermal stability of the mineral nesquehonite to be defined, and, further, the changes in the formula of nesquehonite with temperature change can be defined. Indeed, Raman spectroscopy enables the formula of nesquehonite to be better defined as Mg(OH)(HCO₃)·2H₂O. Copyright © 2008 John Wiley & Sons, Ltd.     

Al‐for‐Fe substitution in hematite: the effect of low Al concentrations in the Raman spectrum of Fe2O3

Five different mixed Al‐hematites with an aluminium molar content varying from 0 to 10% were investigated by micro‐Raman spectroscopy to study the effect of Al‐for‐Fe substitution on the hematite lattice. A red shift of hematite vibrational wavenumbers and a line broadening were observed; also a shoulder located near 430 cm⁻¹ and a broad band at 670 cm⁻¹ developed. The variation of the spectral features is discussed in terms of a local disorder correlated to the insertion of Al³⁺ ions into the Fe(O)₆ octahedra constituting hematite structure. A multivariate analysis was also carried out on the spectral data to distinguish between the doped samples analysed. Copyright © 2007 John Wiley & Sons, Ltd.     

Effects of hydrogen flow on properties of hydrogen doped ZnO thin films prepared by RF magnetron sputtering

The hydrogen doped ZnO (ZnO:H) thin films were deposited on quartz glass substrates by radio frequency magnetron sputtering. The doping characteristics of ZnO:H thin films with varied hydrogen flow ratio were investigated. At low hydrogen flow ratio (H₂/(H₂+Ar)≤0.02), the ZnO:H thin films exhibited dominant (002) peaks from X-ray diffraction and the lattice constants became smaller. The particles were mainly a columnar structure. The particles’ size became smaller, and the island-like structure appeared on the thin films surface. In addition, the low resistivity properties of ZnO:H thin films was ascribed to the increase of the carriers concentration and carriers mobility; When the hydrogen flow ratio was more than 0.02 (M≥0.02), two absorption bands at 1400–1800 cm^?1 and 3200–3900 cm^?1 were observed from the FT-IR spectra, which indicated that the ZnO:H thin films had typical Zn–H bonding, O–H bonding (hydroxyl), and Zn–H–O bonding (like-hydroxyl). The scanning electron microscope (SEM) results show that a large number of hydroxyl agglomeration formed an island-like structure on the thin films surface. The absorption peak at about 575 cm^?1 in the Raman spectra indicated that oxygen vacancies (V_O) defects were produced in the process of high hydrogen doping. In this condition, the low resistivity properties of ZnO:H thin films were mainly due to the increasing electron concentration resulted from V_O. Meanwhile, the Raman absorption peaks at approximately 98 cm^?1 and 436 cm^?1 became weaker, and the (002) XRD diffraction peak quenched and the lattice constants increased, which shows that the ZnO:H thin films no longer presented a typical ZnO hexagonal wurtzite structure. With the increasing of hydrogen flow ratio, the optical transmittance of ZnO:H thin films in the ultraviolet band show a clear Burstein–Moss shift effect, which further explained that electron concentration was increased due to the increasing V_O with high hydrogen doping concentration. Moreover, the optical reflectance of the thin films decreased, indicating the higher roughness of the films surface. It was noteworthy that etching effect of H plasma was obvious in the process of heavy hydrogen doping.     

Dussertite BaFe3+3(AsO4)2(OH)5—a Raman spectroscopic study of a hydroxy‐arsenate mineral

The mineral dussertite, a hydroxy‐arsenate mineral with formula BaFe³⁺₃(AsO₄)₂(OH)₅, has been studied by Raman spectroscopy complemented with infrared spectroscopy. The spectra of three minerals from different origins were investigated and proved to be quite similar, although some minor differences were observed. In the Raman spectra of the Czech dussertite, four bands are observed in the 800–950 cm⁻¹ region. The bands are assigned as follows: the band at 902 cm⁻¹ is assigned to the (AsO₄)³⁻ν₃ antisymmetric stretching mode, the one at 870 cm⁻¹ to the (AsO₄)³⁻ν₁ symmetric stretching mode, and those at 859 and 825 cm⁻¹ to the As‐OM^{2 + /3+} stretching modes and/or hydroxyl bending modes. Raman bands at 372 and 409 cm⁻¹ are attributed to the ν₂ (AsO₄)³⁻ bending mode and the two bands at 429 and 474 cm⁻¹ are assigned to the ν₄ (AsO₄)³⁻ bending mode. An intense band at 3446 cm⁻¹ in the infrared spectrum and a complex set of bands centred upon 3453 cm⁻¹ in the Raman spectrum are attributed to the stretching vibrations of the hydrogen‐bonded (OH)⁻ units and/or water units in the mineral structure. The broad infrared band at 3223 cm⁻¹ is assigned to the vibrations of hydrogen‐bonded water molecules. Raman spectroscopy identified Raman bands attributable to (AsO₄)³⁻ and (AsO₃OH)²⁻ units. Copyright © 2010 John Wiley & Sons, Ltd.     

Layer‐dependent resonant Raman scattering of a few layer MoS2

We report resonant Raman scattering of MoS₂ layers comprising of single, bi, four and seven layers, showing a strong dependence on the layer thickness. Indirect band gap MoS₂ in bulk becomes a direct band gap semiconductor in the monolayer form. New Raman modes are seen in the spectra of single‐ and few‐layer MoS₂ samples which are absent in the bulk. The Raman mode at ~230 cm⁻¹ appears for two, four and seven layers. This mode has been attributed to the longitudinal acoustic phonon branch at the M point (LA(M)) of the Brillouin zone. The mode at ~179 cm⁻¹ shows asymmetric character for a few‐layer sample. The asymmetry is explained by the dispersion of the LA(M) branch along the Γ‐M direction. The most intense spectral region near 455 cm⁻¹ shows a layer‐dependent variation of peak positions and relative intensities. The high energy region between 510 and 645 cm⁻¹ is marked by the appearance of prominent new Raman bands, varying in intensity with layer numbers. Resonant Raman spectroscopy thus serves as a promising non invasive technique to accurately estimate the thickness of MoS₂ layers down to a few atoms thick. Copyright © 2012 John Wiley & Sons, Ltd.