Photo-acoustic spectroscopy of SixSe1−x glasses

The optical properties near the fundamental absorption edge has been studied for a series of Si_xSe_1−x glasses using photoacoustic spectroscopy. The compositional dependence of the bandgap E_O, derived from these measurements, is presented and contrasted with the GeSe and the SiS systems. This data is qualitatively explained with a model which accounts for differing numbers of homopolar and heteropolar and heteropolar bonds as the composition is varied. Additional support for this interpretation is found in the compositional behavior of the glass transitions of these alloys.     

Stoichiometry–structure correlation of epitaxial Ce1−xPrxO2−δ (x=0−1) thin films on Si(111)

Epitaxial oxide thin film layers are of interest for model catalytic studies. We report the growth of Ce_1?xPr_xO_2?δ mixed oxide layers of different stoichiometries (x=0–1) and oxygen deficiency (δ>0) on Si(111) by co-evaporating molecular beam epitaxy. The main objective is to identify the crystal phases and to investigate the correlation between compositions and crystal structures. X-ray photoemission spectroscopy was performed to quantify the stoichiometries. An extensive laboratory and synchrotron based X-ray diffraction analysis was carried out to determine the vertical and lateral lattice orientations and the strain status of the layers. The study revealed that single crystalline Ce_1?xPr_xO_2?δ/Si(111) heterostructures can be epitaxially grown on Si(111) for model catalytic studies. In addition to the structure–stoichiometry relationship typical to mixed oxide bulk powders, we identified a hexagonal mixed Ce–Pr oxide thin film phase not yet reported in bulk studies.     

Growth and characterization of lead-free Ba(1−x)CaxTi(1−y)ZryO3 single crystal

A lead-free Ba_(1?x)Ca_xTi_(1?y)Zr_yO₃ (BCZT) single crystal (x=0.08, y=0.26) was grown by the Czochralski (CZ) method in a mixed flux of TiO₂ and ZrO₂. The composition of as-grown BCZT was analyzed by electron probe micro-analysis. The structure, dielectric properties and phase transition were investigated at different temperatures. The X-ray diffraction results confirmed that the structure of the as-grown BCZT crystal was cubic both at 25 °C and 500 °C. The temperature dependence of the dielectric constant and Raman spectra characterization revealed that there was a phase transition from cubic to tetragonal, which happened between 200 K and 250 K. With increasing frequency, the Curie temperature shifted towards high temperature.     

Growth and structural properties of Zn1−xCrxTe crystals

Single crystals of Zn_1?xCr_xTe were grown by vapour phase growth method in the composition range of 0?x?0.005. Chemical analysis, surface morphology, structural and microhardness studies were carried out by EDAX, SEM, XRD and Vicker's indentation techniques, respectively. Microscopic variations between the target and actual compositions were noticed. Morphology studies revealed that dislocation aided growth is active in the present crystals. XRD studies showed that samples of all compositions crystallized in zinc blende structure, and the lattice parameters varied linearly with x following Vegard's law. Vicker's hardness (H_v) decreased exponentially with x.     

Extrinsic doping of CdxHg1−xTe— A review

Extrinsic doping by elements which are stable to subsequent processing will become increasingly important in future infra-red device structures based on Cd_xHg_1−xTe. This paper reviews the incorporation and activation of dopants in the most widely used bulk and epitaxial growth methods. Stoichiometry at the growth temperature is shown to be the critical factor affecting dopant activation. Various factors, including stoichiometry, can affect the as-grown electrical properties and the importance of determining the type of conduction in the as-grown state, if successful extrinsic doping is to be accomplished, is stressed. Data on dopant segregation behaviour, in growth from liquids, acceptor ionization energies and carrier lifetimes are also presented and their importance is discussed.     

Bridgman growth of CdxHg1−xTe— A review

Recent developments in the bulk Bridgman growth method for Cd_xHg_1−xTe are reviewed. Both melt mixing and heat flow control techniques have been applied in attempts to produce more uniform material in terms of composition. In the U.K. work has concentrated on application of the Accelerated Crucible Rotation Technique (ACRT) to achieve the required uniformity improvements. Elsewhere, various means to control isotherm shape have been used with the same aim. The ultimate use of the material is in infra-red detectors and Bridgman grown Cd_xHg_1−xTe has produced these successfully for both photoconductive and photovoltaic applications.     

Thermodynamic description of CdXHg1−XTe growth process by LPE

The paper presents a thermodynamic analysis of the Cd_XHg_1?XTe growth process through liquid phase epitaxy. The diffusion-limited model has been applied to describe the process. The analysis includes the isothermal LPE kinetics of the solid solution’s layers and the influence of their elastic strains. Good correspondence with experimental data has been achieved in various regimes of time and temperature.     

Thermodynamic analysis of the W-Al2O3 system near the melting temperature of Al2O3. I. Evolution of the system in the pressure range of 1 × 10−1−1 × 10−4 bar

The changes in the main chemical reactions occurring upon the interaction between tungsten and the evaporation products of Al₂O₃ melt are considered at a fixed temperature (2400 K). The concentrations of the components coexisting in equilibrium in a closed system under isobaric-isothermal conditions are determined by stochastic simulation for low (× 10⁻¹−1 × 10⁻³ bar) and high (1 × 10⁻⁴ bar) vacuum. It is shown that the gas-liquid-solid system is in heterogeneous equilibrium for the basic component ratio W: Al₂O₃ = 1: 1 in the entire pressure range under consideration. A detailed study of the chemistry of this system should facilitate the choice of the optimal conditions for growing leucosapphire crystals from melt.     

Ab initio calculation of vibrational frequencies of GexSe1−x glass

We have used the density functional theory to make the models of Ge_xSe_1?x glass for which the energy is a minimum. The clusters, Ge₂Se₂, Ge₂Se₃, Ge₃Se, Ge₃Se₂, Ge₄Se, GeSe₃, GeSe₄, chain mode zig-zag Ge₄Se₃, corner sharing GeSe₄, and edge sharing Ge₂Se₆, have been made successfully and their vibrational spectra have been calculated from the first principles. We are able to optimize the bond distances as well as the bond angles. The calculated values of the frequencies of vibrations of the various clusters have been compared with those obtained from the experimental Raman spectra of actual glasses, Ge_xSe_1?x(0 < x < 0.3). The local concentration, x within 0.25 nm is nonuniform in the amorphous material. When the same cluster occurs in two stable configurations, low frequency vibrations of frequency, ν < 100 cm^?1, are found. The corner sharing GeSe₄ has low frequency modes at 54 cm^?1 and 93 cm^?1 whereas these modes disappear in the pyramidal configuration. The low frequency modes are therefore associated with the breaking of C₄ symmetry of the pyramidal configuration. The computed vibrational frequencies of clusters Ge₃, Ge₄Se₃, Ge₂Se₃, GeSe₃ and Ge₃Se₂ are actually present in the Raman spectra of the glass, Ge_xSe_1?x(0 < x < 0.3).     

Structural and magnetic properties of ZnO and Zn1−xMnxO nanocrystals

Chemical precipitation of metal-ions from aqueous solution has been successfully used to produce Zn_1?xMn_xO nanocrystals, in the form of nano-powder. X-ray diffraction (XRD) measurements reveal that the as-prepared samples are single-phase materials and their lattice constant changes with the variation of Mn-concentration, which indicates the incorporation of Mn²⁺ into the hosting ZnO. These findings are corroborated by the observation of the well defined six hyperfine lines of Mn²⁺ ion in the electron paramagnetic resonance (EPR) spectra of the samples with a low Mn-concentration, and of a broad EPR line, which manifests the onset of Mn–Mn exchange interaction, in the samples with an elevated value of x.     

Electromechanical and electro-optic properties of xBiScO3–yBiGaO3–(1−x−y)PbTiO3 single crystals

Single crystals in the xBiScO₃–yBiGaO₃–(1−x−y)PbTiO₃ (BS–BG–PT) system were grown by the high temperature solution method using Pb₃O₄ and Bi₂O₃ as the flux. The dielectric permittivity (ε_r) at room temperature for unpoled tetragonal crystals was determined to be 500–600 with dielectric loss tangents less than 0.3%. The Curie temperature was found to be around ∼420–450°C, with a dielectric maximum, exhibiting relaxor behavior. The longitudinal piezoelectric coefficient (d₃₃) was found to be ∼300 pC/N for 〈0 0 1〉 oriented tetragonal crystals with electromechanical coupling factor (k₃₃) of 75%, with a shear mode, d₁₅∼290 pC/N and k₁₅∼45%, lateral mode, d₃₁∼−55 pC/N and k₃₁∼−37%. The remnant polarization (P_r) was 46 μC/cm² with a coercive field (E_c) of 43 kV/cm at 1 Hz and DC field of 60 kV/cm. The linear electro-optic (E-O) coefficients of poled crystals determined using an automated scanning Mach–Zehnder interferometer method at room temperature and wavelength of 632.8 nm were r₃₃=36 and r₁₃=4 pm/V, respectively.     

Characteristics of Guajazulene Based Chemosensor Toward CN− and F− Anions

A chemosensor having electron pushing donor and pulling acceptor material based on conjugation bridges, namely D-π-A structural chemosensor, was herein designed and synthesized. This chemosensor 3 contained guajazulene and indole moieties, which was synthesized through a one-step condensation reaction. The synthesized material showed very selective sensing properties towards anions. Upon the addition of CN- and F-, the remarkable changes in absorption spectra were monitored. However, each of others did not show any noticeable optical changes. The original intramolecular charge transfer system of chemosensor 3 was altered by the formation of N- at iindole moiety with anion reaction: caused by the deprotonation of NH at the indole moiety of chemosensor. With intermolecular charge transfer system between chemosensor 3 and anions, the electron density and distribution were determined by frontier calculation method.     

TEM study of defects in AlxGa1−xN layers with different polarity

Transmission electron microscopy (TEM) studies of defects in Al_xGa_1?xN layers with various Al mole fractions (x=0.2, 0.4) and polarities were carried out. The samples were grown by ammonia molecular beam epitaxy on sapphire substrates and consisted of low-temperature AlN (LT-AlN) and high-temperature AlN (HT-AlN) buffer layers, a complex AlN/AlGaN superlattice (SL) and an Al_xGa_1?xN layer (x=0.2, 0.4). It was observed that at the first growth stages a very high density of dislocations is introduced in both Al-polar and N-polar structures. Then, at the interface of the LT-AlN and HT-AlN layers half-loops are formed and the dislocation density considerably decreases in Al-polar structures, whereas in the N-polar structures such a behavior was not observed.The AlN/AlGaN superlattice efficiently promotes the bend and annihilation of threading dislocations and respectively the decrease of the dislocation density in the upper Al_xGa_1?xN layer with both polarities.The lattice relaxation of metal-polar Al_0.2Ga_0.8N was observed, while N-polar Al_0.2Ga_0.8N did not relax. The dislocation densities in the N-polar Al_0.2Ga_0.8N and Al_0.4Ga_0.6N layers were 5.5×10⁹ cm^?2 and 9×10⁹ cm^?2, respectively, and in metal-polar Al_0.2Ga_0.8N and Al_0.4Ga_0.6N layers these were 1×10¹⁰ cm^?2 and 6×10⁹ cm^?2, respectively.Moreover, from TEM images the presence of inversion domains (IDs) in N-polar structures has been observed. The widths of IDs varied from 10 to 30 nm. Some of the IDs widen during the growth of the AlN buffer layers. The IDs formed hills on the surface of the N-polar structures.     

Raman investigation of ZnO and Zn1−xMnxO nanocrystals synthesized by precipitation method

Zn_1?xMn_xO nanocrystal samples have been successfully synthesized using the chemical precipitation method in aqueous solution. Comparing with pure ZnO NC, the Raman data recorded from the manganese-doped nanocrystals shows an enhancement of the peaks located at 334 and 439 cm^?1. Besides, a new feature at 659 cm^?1 emerges. X-ray diffraction (XRD) of the as-precipitated nanocrystal samples illustrates that Mn-doping only makes the XRD peaks of the as-precipitated Mn-doped nanocrystals shift towards lower angle values, but the crystal structure of bulk ZnO is still preserved in the Mn-doped samples. Hence, the high quality Zn_1?xMn_xO (x ? 0) nanocrystals are formed through the replacement of zinc ions by manganese ions.     

The crystallization kinetics of nanothin amorphous TlGa1 − x Ge x Se2 films

Crystallography Reports - The kinetics of phase transformations of amorphous Ge-doped TlGaSe2 films has been investigated by kinematic electron diffraction. It is shown that the crystallization of...     

Ga and In incorporation rates in Ga1−xInxAs growth by chemical beam epitaxy

GaAs, InAs and Ga_1?xIn_xAs layers were grown by chemical beam epitaxy (CBE) using triethylgallium, trimethylindium and tertiarybutylarsine as precursors for Ga, In and As, respectively. The growth rate during the homoepitaxial growth of GaAs and InAs, deduced from the frequency of reflection high-energy electron diffraction intensity oscillations, was used to calibrate the incorporation rates for the III elements. The In content of the Ga_1?xIn_xAs layers was measured by Rutherford backscattering spectrometry and compared with the value predicted from the above calibration data; while the measured In mole fraction is close to the predicted value for the samples grown for low In to Ga flux ratios (x<0.2), the In incorporation is enhanced for larger values of this ratio. The results obtained on layers grown at different substrate temperatures show that In mole fraction is almost constant at growth temperatures in the range 400–500 °C, but a strong dependence on the substrate temperature has been found outside this range. The above results, not observed for samples grown by solid source molecular beam epitaxy, indicate that some interaction between Ga and In precursors at the sample surface could take place during the growth by CBE.     

Calorimetric study and Kissinger analysis of melt-spun DyMn6−xGe6−xFexAlx (1 ⩽ x ⩽ 2.5) alloys

Thermal properties of rapidly quenched alloys from the DyMn_6?xGe_6?xFe_xAl_x (1 ? x ? 2.5) series produced by melt-spinning have been investigated by differential scanning calorimetry (DSC). The DSC curves show two exothermic effects connected with crystallization processes. Crystallization temperatures and enthalpies ΔH have been estimated. The systematic changes in these parameters allow concluding that the crystallization exothermic events are independent. Effective activation energies E have been determined using the Kissinger analysis and relatively high values up to 480 ± 20 kJ/mol for DyMn₄Ge₄Fe₂Al₂ have been found indicating high thermal stability of the amorphous state in this alloy series.     

Structure and properties of ceramic solid solutions Li x Na1 − x Ta y Nb 1 − y O3 (x = 0–0.05, y = 0–0.04)

The structure of Li_0.03Na_0.97Ta _y Nb_{1 ? y} O₃ ceramic solid solutions and the processes of its disordering with a change in composition and temperature have been studied by full-profile X-ray diffraction analysis and Raman spectroscopy. It was established that at room temperature the structure of Li_0.03Na_0.97Ta_0.05Nb_0.95O₃ solid solutions is close to the NaNbO₃ structure and has a space group P21ma with four formula units per unit cell. It was shown that the oxygen octahedra in the Li _x Na_1?x Ta_0.1Nb_0.9O₃ solid solutions (0, 0.15, 0.03, 0.04, 0.05) are slightly distorted and their geometry is identical to that of octahedra in the NaNbO₃ structure. The temperature dependence of the intensities of lines in the Raman spectrum of Li_0.03Na_0.97Ta_0.4Nb_0.6O₃ solid solutions corresponding to vibrations of Li⁺ and Na⁺ cations in the cuboctahedral structural voids revealed a strong disordering in the alkali metal sublattice at a temperature above 322°C. This may indicate the essential stepwise increase in the Li⁺ cation mobility and may result in a change in the kinetic and energetic characteristics of ion charge transport.