Temperature‐depending Raman line‐shift of silicon carbide

Silicon carbide (SiC) is often used for electronic devices operating at elevated temperatures. Spectroscopic temperature measurements are of high interest for device monitoring because confocal Raman microscopy provides a very high spatial resolution. To this end, calibration data are needed that relate Raman line‐shift and temperature. The shift of the phonon wavenumbers of single crystal SiC was investigated by Raman spectroscopy in the temperature range from 3 to 112°C. Spectra were obtained in undoped 6H SiC as well as in undoped and nitrogen‐doped 4H SiC. All spectra were acquired with the incident laser beam oriented parallel as well as perpendicular to the c‐axis to account for the anisotropy of the phonon dispersion. Nearly all individual peak centers were shifting linearly towards smaller wavenumbers with increasing temperature. Only the peak of the longitudinal optical phonon A₁(LO) in nitrogen‐doped 4H SiC was shifting to larger wavenumbers. For all phonons, a linear dependence of the Raman peaks on both parameters, temperature and phonon frequency, was found in the given temperature range. The linearity of the temperature shift allows for precise spectroscopic temperature measurements. Temperature correction of Raman line‐shifts also provides the ability to separate thermal shifts from mechanically induced ones. Copyright © 2009 John Wiley & Sons, Ltd.     

Raman spectroscopic investigations on transition‐metal dichalcogenides MX2 (M = Mo,W; X = S,Se) at high pressures and low temperature

Transition‐metal dichalcogenides have been investigated using Raman spectroscopy both being off‐resonance and in resonance. The first‐order Raman spectra of MoS₂, MoSe₂, WS₂ and WSe₂ single crystal synthesized by vapor transport technique have been studied as a function of hydrostatic pressure (0–20 GPa) and temperature (80–300 K). Isobaric and isothermal mode‐Grüneisen parameters have been determined from the temperature and pressure‐dependent Raman spectra. The pressure dependence of the chalcogen–chalcogen and metal–chalcogen force constant has been obtained using a central force model. Separation of the temperature dependence of Raman mode wavenumbers into quasi‐harmonic and purely anharmonic contributions using measured high‐pressure Raman data allows us to extract the changes in the phonon wavenumbers arising exclusively due to anharmonic interactions. Copyright © 2014 John Wiley & Sons, Ltd.     

Temperature‐dependent Raman scattering study of multiferroic MnWO4

We have measured polarized Raman spectra of MnWO₄ single crystals at low temperatures, and studied the temperature dependence of the various phonon modes. From our Raman studies of the MnWO₄, a new transition temperature, ∼180 K, was found. We have completely assigned the symmetries of the 18 observed Raman modes of the MnWO₄, as expected from a group theoretical analysis. These Raman modes have been classified into three groups according to weak, intermediate and strong temperature dependence of the modes in each group. Six internal modes have been identified by their weak temperature dependence of the Raman wavenumbers. The temperature dependence of the wavenumbers of the B_g modes in Mg O bonds, modes of intermediate temperature dependence group, shows an anomalous behavior under 50 K. The phonon modes of strong temperature dependence show an anomalous change at ∼180 K in the linewidths. This is believed to be a new transition temperature which involves the changes in the inter‐WO₆ octahedra structure. Copyright © 2009 John Wiley & Sons, Ltd.     

Raman spectroscopic investigations of epitaxial BiFeO3 thin films on rare earth scandate substrates

BiFeO₃ epitaxial thin films fabricated by pulsed laser deposition on different scandate substrates were investigated by means of Raman spectroscopy. We observed periodic changes in Raman position, full width at half maximum and intensity for some phonon modes as a function of the azimuthal angle ϕ. Further analysis revealed the possibility to assign the so far controversial discussed Raman modes at low wavenumbers (<250 cm⁻¹) through rotational Raman measurements at different azimuthal angles, which show high sensitivity to the aforementioned parameters. Furthermore, the ferroelectric/ferroelastic domain structure shown by piezo‐response force microscopy investigations of the samples was confirmed. Our results are supported by symmetry‐based calculations including the analysis of Raman scattering geometry as well as the dielectric function of BiFeO₃ in the infrared range. Copyright © 2015 John Wiley & Sons, Ltd.     

Lattice dynamics of Al‐containing MAX‐phase carbides: a first‐principle study

A systematic study on lattice dynamics of M_{n + 1}AlC_n (n = 1–3) phases using first‐principle calculations is reported, where the Raman‐active and infrared‐active (IR) modes are emphasized. The highest phonon wavenumber is related to the vibration of C atoms. The ‘imaginary wavenumber’ in the phonon spectrum of Nb₃AlC₂ contributes to the composition gap in Nb‐Al‐C system (Nb₂AlC and Nb₄AlC₃ do appear in experiments, but there are no experimental reports on Nb₃AlC₂). The full set of Raman‐active and IR‐active modes in the 211, 312, and 413 M_{n + 1}AX_n phases is identified, with the corresponding Raman and IR wavenumbers. The 211, 312, and 413 M_{n + 1}AX_n phases have 4, 6, and 8 IR‐active modes, respectively. There is no distinct difference among the wavenumber ranges of IR‐active modes for 211, 312, and 413 phases, with the highest wavenumber of 780 cm⁻¹ in Ta₄AlC₃. The Raman wavenumbers of M₂AlC phases all decrease with increasing the d‐electron shell number of transition metal M. However, this case is valid only for the Raman‐active modes with low wavenumbers of M₃AlC₂ and M₄AlC₃. Copyright © 2015 John Wiley & Sons, Ltd.     

Phonon confinement and substitutional disorder in Cd1−xZnxS nanocrystals

1‐longitudinal optical (LO) phonons in free‐standing mixed Cd_1−xZn_xS nanocrystals, synthesized using chemical precipitation, are investigated using Raman spectroscopy. As expected for the nanocrystals, the 1‐LO modes are found to appear at slightly lower wavenumbers than those in the bulk mixed crystals and exhibit one‐mode behavior. On the other hand, the line broadening is found to be much more than that can be accounted on the basis of phonon confinement. From the detailed line‐shape analysis it turns out that the substitutional disorder in the mixed crystals contributes much more to the line broadening than the phonon confinement. The linewidth arising from these mechanisms are also extracted from the analysis. Copyright © 2009 John Wiley & Sons, Ltd.     

Raman investigations of rare‐earth arsenate single crystals

Polarized Raman spectroscopy was used to investigate the room‐temperature phonon characteristics of a series of rare‐earth arsenate (REAsO₄, RE = Sm, Eu, Gd, Tb, Dy, Ho, Tm, Yb, and Lu) single crystals. The Raman data were interpreted in a systematic manner based on the known tetragonal zircon structure of these compounds, and assignments and correlations were made for the observed bands. We found that the wavenumbers of the internal modes of the AsO₄ tetrahedron increased with increasing atomic number. This increase seems to be correlated to the contraction of the RE–O bond length. For three out of four lattice wavenumbers observed, this tendency was not nearly so marked as in the case of the internal mode wavenumber. Copyright © 2009 John Wiley & Sons, Ltd.     

Raman spectrum of vanadium pentoxide from density‐functional perturbation theory

We present ab initio calculation within the framework of the density‐functional theory (DFT) on band structure and vibrational properties of bulk V₂O₅. The structure of V₂O₅ comes from optimization of the experimental data with lattice parameters fixed. The band structure of the optimized structure has been calculated, and the result fits the experimental data very well and also gives similar results as those calculated by other methods. The phonon eigenwavenumbers of the Γ‐ point of V₂O₅ bulk have been calculated ab initio in density‐functional perturbation theory (DFPT). The calculated vibrational wavenumbers are in good agreement with observed infrared and Raman wavenumbers, and the predictive full phonon dispersion of bulk V₂O₅ has also been obtained. Further we calculated the Raman spectrum of vanadium pentoxide (V₂O₅) powder sample using the obtained Raman susceptibility. Calculated and measured intensities show overall good agreement. Copyright © 2008 John Wiley & Sons, Ltd.     

Molecular structure,spectroscopic (FTIR,FTIR gas phase,FT‐Raman) first‐order hyperpolarizability and HOMO–LUMO analysis of 4‐methoxy‐2‐methyl benzoic acid

Vibrational spectral analysis was carried out for 4‐methoxy‐2‐methyl benzoic acid (4M2MBA) by using Fourier transform infrared (FT‐IR) (solid, gas phase) and FT‐Raman spectroscopy in the range of 400–4000 and 10–3500 cm⁻¹ respectively. The effects of molecular association through O H···O hydrogen bonding have been described by the single dimer structure. The theoretical computational density functional theory (DFT) and Hatree‐Fock (HF) method were performed at 6–311++G(d,p) levels to derive the equilibrium geometry, vibrational wavenumbers, infrared intensities and Raman scattering activities. The scaled theoretical wavenumbers were also shown to be in good agreement with experimental data. The first‐order hyperpolarizability (β₀) of this novel molecular system and related properties (β, α₀ and Δα) of 4M2MBA are calculated using the B3LYP/cc‐pvdz basis set, based on the finite‐field approach. A detailed interpretation of the infrared and Raman spectra of 4M2MBA is reported. The theoretical spectrograms for FT‐IR and FT‐Raman spectra of the title molecule were also constructed and compared with the experimental one. Copyright © 2010 John Wiley & Sons, Ltd.     

Vibrational analysis of the H4I2O102− ion in CuH4I2O10·6H2O

Vibrational wavenumbers (IR and Raman) have been calculated for the diperiodate ion H₄I₂O₁₀²⁻ on the basis of a DFT method and assigned to experimental wavenumbers obtained from CuH₄I₂O₁₀·6H₂O. To obtain vibrational wavenumbers in the range comparable to the experiment it was necessary to use the complex [(H₄I₂O₁₀)₇(Cu(H₂O)₆)₆]²⁻. Smaller complexes lead to much too high wavenumbers for the O‐H stretching vibrations and to too small wavenumbers in the range of the internal vibrations of the anion. On the basis of the results of the calculations an assignment of the Raman lines observed for CuH₄I₂O₁₀· 6H₂O to the vibrational modes is given. Copyright © 2008 John Wiley & Sons, Ltd.     

Raman spectroscopy study of Na2MoO4·2H2O and Na2MoO4 under hydrostatic pressure

Raman spectroscopy measurements of polycrystalline Na₂MoO₄·2H₂O (NMHO) and Na₂MoO₄ (NM) under hydrostatic pressure (from 0 to 10 GPa) were performed. This study allowed us to monitor the stretching and bending vibrations of MoO₄ ions as well as the translational modes as a function of pressure. The pressure dependence of the wavenumbers of the modes indicates that the Na₂MoO₄·2H₂O undergoes two phase transitions at about ∼3 and ∼4 GPa. When releasing pressure, we have observed that the original spectrum is recovered, thereby pointing to a reversible process. The Na₂MoO₄ (NM) starting phase was found to be stable up to 10 GPa. The pressure‐dependent Raman data for NM did not reveal any structural modification. The influence of the pressure‐transmitting medium on the phase transitions is also discussed. Copyright © 2009 John Wiley & Sons, Ltd.     

Correlation of size and oxygen bonding at the interface of Si nanocrystal in Si–SiO2 nanocomposite: A Raman mapping study

Raman spectroscopy/mapping is used to investigate the variation of Si phonon wavenumbers, i.e., lower wavenumber (LW ~ 495–510 cm⁻¹) and higher wavenumber (HW ~ 515–519 cm⁻¹) phonons, observed in Si–SiO₂ multilayer nanocomposite (NCp) grown using pulsed laser deposition. Sensitivity of Raman spectroscopy as a local probe to surface/interface is effectively used to show that LW and HW phonons originate at surface (Si–SiO₂ interface) and core of Si nanocrystals, respectively. The consistent picture of this understanding is developed using Raman spectroscopy monitored laser heating/annealing and cooling experiment at the site of the desired wavenumber, chosen with the help of Raman mapping. Raman spectra calculations for Si₄₁ cluster with oxygen and hydrogen termination show strong mode at 512 cm⁻¹ for oxygen terminated cluster corresponding to the vibration of surface Si atoms. This supports our attribution of LW phonons to be originating at the Si–SiO₂ surface/interface. These results along with XPS show that nature of interface (oxygen bonding) in turn depends on the size of nanocrystals and LW phonons originate at the surface of smaller Si nanocrystals. The understanding developed can conclude the ongoing debate on large variation in Si phonon wavenumbers of Si–SiO₂ NCps in the literature. Copyright © 2015 John Wiley & Sons, Ltd.     

Surface optical Raman modes in GaN nanoribbons

Raman scattering studies were performed in GaN nanoribbons grown along [1 0 0]. These samples were prepared inside Na‐4 mica nanochannels by the ion‐exchange technique and subsequent annealing in NH₃ ambient. Detailed morphological and structural studies including the crystalline orientation were performed by analyzing the vibrational properties in these GaN nanoribbons. Pressure in the embedded structure was calculated from the blue shift of the E₂(high) phonon mode of GaN. Possible red shift of optical phonon modes due to the quantum confinement is also discussed. In addition to the optical phonons allowed by symmetry, two additional Raman peaks were also observed at ∼633 and 678 cm⁻¹ for these nanoribbons. Calculations for the wavenumbers of the surface optical (SO) phonon modes in GaN in Na‐4 mica yielded values close to those of the new Raman modes. The SO phonon modes were calculated in the slab (applicable to belt‐like nanoribbon) mode, as the wavenumber and intensity of these modes depend on the size and the shape of the nanostructures. The effect of surface‐modulation‐assisted electron–SO phonon scattering is suggested to be responsible for the pronounced appearance of SO phonon modes. A scaling factor is also estimated for the interacting surface potential influencing the observed SO Raman scattering intensities. Copyright © 2010 John Wiley & Sons, Ltd.     

Raman spectroscopy of ZnS nanostructures

We report Raman scattering results of wurtzite ZnS nanowires, nanocombs, and nanobelts. The Raman spectrum obtained from ZnS nanowires exhibits first‐order phonon modes at 272, 284, and 350 cm⁻¹, corresponding to A₁/E₁ transverse optical, E₂ transverse optical, and A₁/E₁ longitudinal optical phonons, respectively. Several multiphonon modes are also observed. The longitudinal optical phonon mode varies in wavenumber for nanocombs and nanobelts, indicating that the residual strain varies during the morphological change from ZnS nanowires to nanocombs and ultimately to nanobelts. Interestingly, a surface optical (SO) phonon mode varies in wavenumber depending on the shape and surface roughness of the ZnS nanostructures. The surface modulation wavelengths of the ZnS nanowires, nanocombs, and nanobelts are estimated using the SO phonon dispersion relations and the observed SO phonon wavenumbers. Copyright © 2012 John Wiley & Sons, Ltd.     

Spin-dependent phonon Raman scattering in CdCr2Se4

Influences of ferromagnetic ordering on the phonon Raman scattering are studied for CdCr₂Se₄ through the intensity measurements of Raman spectra between 25 and 300 K with various wavelengths of excitation light (488.0–676.4 nm). Spin-dependent enhancements of Raman cross section are observed for optical phonon lines D(168 cm^?1) and F(238 cm^?1) with excitation wavelengths of about 630 and 550 nm, respectively. This kind of phenomenon in spinel-type chalcogen chromites seems to originate in spin-dependent intermediate interactions in the excited states of specific electronic transitions with which the incident or scattered light is resonant.     

Raman and IR studies of BaBi2Ta2O9 prepared by a sol–gel process

The formation of ferroelectric BaBi₂Ta₂O₉ (BBT) by a sol–gel process was studied by X‐ray, Raman and infrared (IR) spectroscopy. Our results show that the formation of a Bi‐layered phase proceeds via an intermediate fluorite‐type phase. This method allows obtaining a BBT phase already at 750 °C. This temperature is about 150–200 °C lower than that required in the conventional solid‐state reaction. Therefore, a material with smaller particle size can be obtained. Raman and IR studies of the obtained Bi‐layered phase show that phonon properties of the synthesized particles are slightly different from those of the bulk material due to the size effect, defects and weak changes in local order. Temperature dependence of Raman and IR wavenumbers is consistent with the orthorhombic distortion of the BBT structure. Copyright © 2011 John Wiley & Sons, Ltd.     

First‐order Raman scattering of the MAX phases Ta4AlC3, Nb4AlC3, Ti4AlN3, and Ta2AlC

Herein, we report on the Raman spectra of the following ternary hexagonal carbides and nitrides (MAX phases): Ta₄AlC₃, Ta₂AlC and Ti₄AlN₃. We also present the Raman‐active modes of α‐ and β‐Ta₄AlC₃, Nb₄AlC₃ and Ti₄AlN₃, – also referred to as the 413 MAX phases – as predicted from first principles calculations using density functional theory. We compare the obtained experimental and calculated results with previous studies on Ta₂AlC and Ti₄AlN₃. The vibrational behavior associated with the Raman‐active modes for the 413 phases has been identified for the first time. In general, the agreement is good between theory and experiment. The experimental and calculated results indicate that the modes at low wavenumbers ‐ dominated by the Al atoms ‐ are a weak function of chemistry and the differences in energy can be traced to variations in the reduced mass. The modes at higher wavenumbers are dominated by the C and N atoms and show a strong dependence on the unit cell chemistry, with the Ta–C bond being stiffer than the Nb–C bond, which is in turn stiffer than Ti–N. Copyright © 2011 John Wiley & Sons, Ltd.     

Temperature dependence of phonon spectra and structural characteristics in multiferroic LuFe2O4 system

The phonon spectra and structural characteristics of the LuFe₂O₄ system were investigated using X‐ray diffraction as well as Raman and infrared (IR) spectroscopic techniques. Two step‐like anomalies of the wavenumbers of the peak in the Raman spectra and the peak in IR spectra, as well as some weak anomalies of the lattice parameters, were found around the ferrimagnetic and ferroelectric transition temperatures. The substitutions of Lu with Yb and Fe with Mn lead to the corresponding wavenumber shifts in the optical spectra, which can be attributed to the changes in the atomic mass and lattice parameters. Furthermore, the Raman intensity was found to be related to the changes in the local structure and electrical conductivity. These results illustrate that the structural fluctuations could effectively influence the phonon modes, and a possible interplay among the structural, magnetic, and charge‐ordering properties exists in this multiferroic system. Copyright © 2011 John Wiley & Sons, Ltd.     

A single‐crystal Raman and infrared study of the nonlinear optical crystal MBANP

Single‐crystal Raman and polycrystalline thin‐film infrared measurements have been obtained for the polar organic nonlinear optical material 2‐(α‐methylbenzylamino)‐5‐nitropyridine (MBANP). For comparison, thin‐film polycrystalline infrared measurements were also made on 2‐(α‐methylbenzylamino)‐3,5‐dinitropyridine (MBADNP). The long wavelength electronic absorption was measured in several solvents and as a thin solid film. The Raman spectra are dominated by three intense bands attributed to vibrations of the ring, the NO₂ substituent, and the N H bond. The most intense scattering and absorption arose from the α_bb component of the polarisability tensor. This implies that the most significant contribution to the transition polarisability arises from the electronic transition near 383 nm, polarised along the b‐axis of the crystal. The strongest bands in the infrared spectra are also associated with the same three bands, consistent with the predictions of the effective conjugation coordinate (ECC) theory, implying efficient electron–phonon coupling (or electronic delocalisation) in the conjugated system. DFT calculations of vibrational wavenumbers and eigenvectors were used to assign relevant vibrational features and to derive useful information about the molecular structure. This single‐crystal material is also a strong candidate for an efficient laser Raman converter with a large wavenumber shift of 3404 cm⁻¹ and a high damage threshold. Copyright © 2010 John Wiley & Sons, Ltd.