2,2′-联吡啶和亚铁氰化钾对乙醛酸化学镀铜的影响

以乙醛酸作还原剂、Na2EDTA为络合剂、2,2′-联吡啶和亚铁氰化钾作为添加剂组成化学镀铜体系,研究了两种添加剂对化学镀铜速率、镀层表面形貌、组成和结构的影响.结果表明:添加适量的2,2′-联吡啶和亚铁氰化钾,不仅提高了镀液的稳定性,而且使沉积速率增加1倍.这两种添加剂的同时使用,使镀层颜色变亮,形貌发生变化.所得镀层是多晶铜,没有发现夹杂Cu2O.     

乙醛酸化学镀铜的电化学研究

以乙醛酸作还原剂,Na2EDTA.2H2O为络合剂,亚铁氰化钾和2,2'-联吡啶为添加剂组成化学镀铜液体系,应用线性扫描伏安法研究分析了络合剂、添加剂对该镀铜体系电化学性能的影响.结果表明,络合剂Na2EDTA对乙醛酸的氧化和铜的还原有阻碍作用.亚铁氰化钾和过量(20 mg/L)的2,2'-联吡啶对乙醛酸的氧化起较明显的抑制作用.     

2,2′-联吡啶在化学镀铜中的作用研究

研究了以次磷酸钠作还原剂的化学镀铜体系,添加剂2,2′-联吡啶对化学镀铜沉积速率、次磷酸钠阳极氧化和铜离子阴极还原、以及镀层形貌、结构和组分存在状态的影响.结果表明,2,2′-联吡啶对化学沉积起阻化作用.电化学线性伏安扫描实验显示,镀液中加入2,2′-联吡啶,次磷酸钠的氧化峰电势有所负移,但峰电流减小;铜离子的还原峰电势负移,但峰电流逐渐增大.扫描电子显微镜(SEM)、能量色散谱(EDS)、X射线衍射(XRD)及X射线光电子能谱(XPS)等实验分别表明,添加剂使镀层致密和光亮、镍含量降低;镀层为Cu-Ni合金,呈面心立方结构,无明显晶面择优取向现象;镀层中铜和镍以金属态存在,磷的质量含量小于0.05%.     

ABS塑料化学镀铜实验

通过研究塑料化学镀铜的时间与铜沉积速率的关系，使学生理解甲醛作为还原剂进行塑料化学镀铜的原理；同时，掌握研究问题的方法和思路，为以后进行课程设计或进行研究性工作奠定基础。     

络合剂和添加剂对化学镀铜影响的电化学研究

以CuSO4·5H2O作主盐,乙二胺四乙酸二钠盐(Na2EDTA)作主络合剂,三乙醇胺(TEA)作辅助络合剂,2,2′＿联吡啶(dipyridine)作添加剂,组成化学镀铜液体系,研究络合剂、添加剂对该镀液电化学极化性能的影响,并结合化学沉积速率考察TEA和2,2′＿联吡啶对镀液性能的影响.     

ABS塑料化学镀铜的研究

以ABS塑料为基体,甲醛为还原剂,EDTA为络合剂,研究了化学镀铜的基本工艺。考察镀液的pH值、温度、时间对镀铜的影响,确定最佳工艺参数为pH=12.5、T=50℃、t=40min。通过扫描电镜和X射线衍射分析了最佳条件下镀铜层的形貌和成分,结果表明:该镀层外观红亮,表面平整,杂质含量很少。     

2，2＇-联吡啶在化学镀铜中的作用研究

研究了以次磷酸钠作还原剂的化学镀铜体系，添加剂2，2＇-联吡啶对化学镀铜沉积速率、次磷酸钠阳极氧化和铜离子阴极还原、以及镀层形貌、结构和组分存在状态的影响．结果表明，2，2＇-联吡啶对化学沉积起阻化作用．电化学线性伏安扫描实验显示，镀液中加入2，2＇-联吡啶，次磷酸钠的氧化峰电势有所负移，但峰电流减小；铜离子的还原峰电势负移，但峰电流逐渐增大．扫描电子显微镜（SEM）、能量色散谱（EDS）、X射线衍射（XRD）及X射线光电子能谱（XPS）等实验分别表明，添加剂使镀层致密和光亮、镍含量降低；镀层为Cu-Ni合金，呈面心立方结构，无明显晶面择优取向现象；镀层中铜和镍以金属态存在，磷的质量含量小于0．05％．     

不同化学镀液中p－Si上激光诱导局部沉积铜

在化学镀铜浴液中,p-Si片在彼长为514.5nm的激光束的照射下,得到了选择性的铜镀层。采用AEs、SEM、RBS和电学技术对比了在3种含不同还原剂的镀液中得到的镀层的形貌、组成、界面扩散及电学性质;探讨了液相激光诱导化学沉积铜的机理。     

维生素C和味精化学镀铜实验探究

经实验探究, 提出一种绿色环保的简易化学镀铜方法。首先利用葡萄糖银镜反应在洁净试管内壁附上一层活性物质, 在此基础上采用维生素C(即抗坏血酸)、味精(即谷氨酸一钠)和硫酸铜等物质按一定工艺操作, 在试管壁上镀上一层光亮的铜镜。本实验适合作为中学化学兴趣实验。     

化学镀钴和超级化学镀填充的研究进展

随着半导体集成度的不断提高,铜互连线的电阻率迅速提高。当互连线宽度接近7 nm时,铜互连线的电阻率与钴接近。IBM和美国半导体公司（ASE）已经使用金属钴取代铜作为下一代互连线材料。然而,钴种子层的形成和超级电镀钴填充7 nm微孔的技术工艺仍是一个很大的挑战。化学镀是在绝缘体表面形成金属种子层的一种非常简单的方法, 通过超级化学镀填充方式, 直径为几纳米的盲孔可以无空洞和无缝隙的方式完全填充。本文综述了化学镀钴的研究进展,并分析了还原剂种类对化学镀钴沉积速率和镀膜质量的影响。同时, 在长期从事超级化学填充研究的基础上, 作者提出了通过超级化学镀钴技术填充7 nm以及一下微盲孔的钴互连线工艺。     

Electroless Copper Plating on Liquid Crystal Polymer Films Using Dimethylamine Borane as Reducing Agent

Dimethylamine borane (DMAB) was used in electroless copper plating on liquid crystal polymer (LCP) films. An orthogonal test was applied to optimize the plating condition. With Cu film resistivity as the evaluation index, the optimum plating condition is: 10 g/L of CuSO₄ ? 5H₂O, 14 g/L of EDTA‐2Na, 6 g/L of DMAB, 9.5 of pH value and 50 °C. As pH value increases, the Cu film resistivity decreases and the depo‐ sition rate increases. As temperature increases, the Cu film resistivity decreases first and then increases with a minimum at 50 °C while the deposition rate increases first and then decreases with a maximum at 50 °C. The decreased Cu film resistivity can be attributed to the occurrence of CuO. The adhesive strength of copper layer to LCP film is constant at pH values lower than 8.5 and decreases slightly with the increase in pH value. As temperature increases, the adhesive strength decreases slightly. The decreased adhesive strength with both pH and temperature may be a result of an increased corrosion attack from the bath to the surface of LCP films. Low Cu film resistivity and high deposition rate as well as high adhesive strength can be obtained using DMAB reducing agent.     

聚合物材料表面化学镀铜的前处理研究进展

聚合物材料表面金属化在通讯、电子、航空航天领域具有重要应用. 化学镀铜是聚合物材料表面金属化的主要技术之一. 聚合物材料表面的前处理直接影响化学镀铜层的结合力及镀层平整度. 本综述详细介绍非导电聚合物材料的种类、组成以及性能, 并概述其表面化学镀铜前处理的研究进展.     

以次磷酸钠为还原剂化学镀铜的电化学研究

通过电化学方法研究了以次磷酸钠为还原剂, 柠檬酸钠为络合剂的化学镀铜体系. 应用线性扫描伏安法, 检测了温度、pH值、镍离子含量对次磷酸钠阳极氧化和铜离子阴极还原的影响. 结果表明, 升高温度能够加速阳极氧化与阴极还原过程; pH值的提高可促进次磷酸钠氧化, 但抑制铜离子还原; 镍离子的存在不仅对次磷酸钠的氧化有强烈的催化作用, 而且与铜共沉积形成合金. 该合金有催化活性, 使化学镀铜反应得以持续进行.     

基于STEM模式的研究性学习教学实践——以“ABS工程塑料表面化学镀铜”教学为例

以“ABS工程塑料表面化学镀铜”研究性教学为例,运用适合学生发展的“科工”一体项目式学习方式探索STEM教学模式。学生在真实的问题情境中,通过知识前置学习、项目活动设计、实验探索和成果展示等环节,最终确定了最佳工艺条件。在STEM模式下的研究性学习,学生把理论知识融入到具体的工程技术中,实现了学科之间的融合。     

LaCl3和Fe2(SO4)3对化学镀Ni-W-P的影响

三氯化镧;硫酸铁;非晶沉积;LaCl3和Fe2(SO4)3对化学镀Ni-W-P的影响     

酸性化学镀镍磷合金的动力学机理

通过极化曲线研究了3种不同溶液（阴极液、阳极液和完整镀液）的电化学行为,测定了主盐、还原剂浓度以及镀液pH和体系温度对化学镀镍沉积速率的影响. 与直接在镁合金上化学镀镍并使用重量分析法得到的沉积速率相比较发现,完整镀液体系的极化曲线才能真实地反映化学镀镍的沉积过程,其过程不能简单视为由彼此完全独立毫无关联的阴阳极半反应构成. 根据Butler-Volmer公式,本化学镀液体系的化学镀镍过程属混合控制,其表观反应活化能为42.89 kJ·mol^-1.     

Comparison of Bottom-up Filling in Electroless Plating with an Addition of PEG,PPG and EPE

The bottom‐up filling capabilities of electroless copper plating bath with an addition of additives, such as polyethylene glycol (PEG), polypropylene glycol (PPG) and triblock copolymers of PEG and PPG with ethylene oxide terminal blocks termed EPE, were investigated by the cross‐sectional scanning electron microscopy (SEM) observation of sub‐micrometer trenches. Though three additives had inhibition for electroless copper deposition, the suppression degrees of three additives were different. EPE‐2000 had the strongest suppression for electroless copper deposition, and the suppression of PEG‐2000 was the weakest. The bottom‐up filling capability of electroless copper was investigated in a plating bath containing different additives with the concentration of 2.0 mg/L. The cross‐sectional SEM observation indicated the trenches with the width of 280 nm and the depth of 475 nm were all completely filled by the plating bath with an addition of EPE‐2000, but the trenches were not completely filled by the plating bath with an addition of PEG‐2000 or PPG‐2000, and some voids appeared. Linear sweep voltammetry measurement indicated that three additives all inhibited the cathodic reduction reaction and the anodic oxidation reaction, and the inhibition of EPE‐2000 was the strongest among three additives, which agreed with that of the deposition rate of electroless copper. Significant differences in surface roughness of deposited copper film were observed by UV‐visible near‐infrared for different suppressors, and the bright and smooth of deposited copper film were in accordance with the inhibition of three additives.     

Electroless Deposition of Copper on Poly(tetrafluoroethylene) Films Modified by Plasma-Induced Surface Grafting of Poly(4-vinylpyridine)

Argon plasma-pretreated poly(tetrafluoroethylene) (PTFE) films were solution coated with a thin layer of poly(4-vinyl pyridine) (P4VP). Subsequent exposure of the films to argon plasma resulted in the grafting of P4VP on the PTFE films. Electroless plating of copper could be carried out effectively on the P4VP-grafted PTFE (P4VP-g-PTFE) surface after PdCl₂ activation and in the absence of SnCl₂ sensitization (the Sn-free process). The catalytic processes of the electroless plating of copper in the presence and absence of sensitization by SnCl₂ were also compared. The effect of glow discharge conditions on the P4VP concentration and the adhesion strength of the electrolessly deposited copper was investigated. The T-peel adhesion strength of the electrolessly deposited copper with the graft-modified PTFE film was improved in the absence of SnCl₂ sensitization and could reach about 3 N/cm. PdCl₂ activation and electroless deposition of copper could not be carried out on the pristine or the Ar plasma-treated PTFE surface in the absence of prior sensitization by SnCl₂. X-ray photoelectron spectroscopic (XPS) analysis revealed that the electrolessly deposited copper delaminated from the P4VP-g-PTFE film by cohesive failure inside the PTFE film.