Electronic and Shallow Impurity States in Semiconductor Heterostructures Under an Applied Electric Field

With the use of variational method to solve the effective mass equation, we have studied the electronic and shallow impurity states in semiconductor heterostructures under an applied electric field. The electron energy levels are calculated exactly and the impurity binding energies are calculated with the variational approach. It is found that the behaviors of electronic and shallow impurity states in heterostructures under an applied electric field are analogous to that of quantum wells. Our results show that with the increasing strength of electric field, the electron confinement energies increase, and the impurity binding energy increases also when the impurity is on the surface, while the impurity binding energy increases at first, to a peak value, then decreases to a value which is related to the impurity position when the impurity is away from the surface. In the absence of electric field, the result tends to the Levine＇s ground state energy （-1/4 effective Rydberg） when the impurity is on the surface, and the ground impurity binding energy tends to that in the bulk when the impurity is far away from the surface. The dependence of the impurity binding energy on the impurity position for different electric field is also discussed.     

具有不可共度势的掺杂一维体系中波函数的计算

本文将单点杂质引入到不可共度势一维体系中,用格林函数方法推导了杂质状态的能级和波函数。发现当杂质处在不可共度势变化较快的位置时,杂质能级的变化也较大。杂质状态的波函数是略有波动的指数衰减函数。讨论了杂质对带内状态波函数的影响,发现以杂质点为对称的体系中,具有偶宇称的状态波函数,在杂质的附近,振幅有相当大的下降。在对杂质点无对称性的体系中,在杂质的附近,产生一个振幅的阶跃。 关键词：     

Exact solutions of an Ising spin chain with a spin-1 impurity

An exact solution of a single impurity model is hard to derive since it breaks translation invariance symmetry. We present the exact solution of the spin-1/2 transverse Ising chain imbedded by a spin-1 impurity. Using the hole decomposition scheme, we exactly solve the spin-1 impurity in two subspaces which are generated by a conserved hole operator.The impurity enlarges the energy deformation of the ground state above a pure transverse Ising system without impurity.The specific heat coefficient shows a small anomaly at low temperature for finite size. This indicates that the impurity can tune the ground state from a magnetic impurity space to a non-magnetic impurity space, which only exists for spin-1impurity comparing with spin-1/2 impurity and a pure transverse Ising chain without impurity. These behaviors essentially come from adding impurity freedom, which induces a competition between hole and fermion excitation depending on the coupling strength with its neighbor and the single-ion anisotropy.     

Effect of impurity on the absorption of a parabolic quantum dot with including Rashba spin–orbit interaction

In this paper, the influence of impurity parameters on the electron energy spectrum and absorption coefficients in a parabolic quantum dot and in the presence of Rashba spin–orbit interaction subjected to a perpendicular magnetic field is studied. The impurity potential is approximated by a Gaussian form. We have shown that in the both cases of a repulsive and attractive Gaussian impurity, the absorption coefficients are strongly affected by the decay length. These coefficients show blue (red) shift as the decay length of repulsive (attractive) impurity is increased. The dependence of the absorption coefficients on the impurity position is also examined for different polarizations. Our results show that the absorption coefficient has local maximum (minimum) for a given value of impurity position for Y-polarized (X-polarized) light.     

Parametrically Driven Solitons in a Chain of Nonlinear Coupled Pendula with an Impurity

The system consisting of a chain of parametrically driven and damped nonlinear coupled pendula with a mass impurity is studied by means of a discrete version of the envelope function approach. An analogue of the parametrically driven damped nonlinear Schodinger equation with an impurity term is derived from the original lattice equation. Analytical solutions of impurity pinned high-frequency breathers and kinks are obtained. The results show that the mass impurity has striking influence on the high-frequency modes. In addition, we perform numerical simulations, showing that the light mass impurity has a stabilizing effect on the chain. The breathers seeding chaos in the homogeneous chain are pinned on a suitable light impurity to pull the chain from the chaotic state.     

Inadvertent impurity sheets in semiconductors

It is shown that energy levels of impurity pairs and clusters evolve to successively deeper levels as the spatial separation of the impurity atoms decreases. In particular, it is shown that clustering can drive an ordinary shallow dopant, such as a Si donor in GaAs, to a deep, localized level. Such evolution is illustrated by considering clusters of up to five Si atoms as their concentration increases. These results are obtained using a tight binding embedded cluster whose Hamiltonian is derived from a tight-binding Green's function. Going to the limit of a two-dimensional impurity sheet, a Si impurity sheet in GaAs is shown to be deep and to have an indirect bandgap. The impurity sheet results are obtained by use of a tight-binding supercell technique.     

Positron annihilation in Pb2+ doped KCl single crystals

The angular distribution of annihilation photons (ADAP) has been measured in a pure KCl single crystal and in one doped with Pb²⁺ impurities to concentrations of 100 ppm, 550 ppm and 1050 ppm. In unannealed, impurity doped, crystals the intensity of the narrow component increases with increase of impurity concentration. The narrowing of the ADAP curves is explained by assuming trapping of positrons at impurity induced positive ion vacancies. On annealing, the result on the 550 ppm impurity doped crystal shows that there is a dissolution of impurity-vacancy complexes at nominal concentrations of impurity, and the result on the 1050 ppm crystal shows that there is precipitation of impurity for very high concentrations.     

HL-lM装置杂质粒子输运与约束特性

在HL-lM装置上利用激光吹气技术,在等离子体边缘瞬态注入少量Al杂质粒子,通过对真空紫外光谱和软X射线区的杂质辐射测量,分别研究了欧姆等离子体和低杂波电流驱动等离子体两种情况下,Al杂质粒子输运与约束特性。结果表明：在欧姆等离子体和低杂波电流驱动等离子体两种情况下,等离子体中心区,在没有MHD锯齿震荡和有MHD锯齿震荡非锯齿破裂期间,杂质粒子输运基本上受新经典规律支配;在有MHD锯齿震荡锯齿破裂期间,杂质粒子输运受MHD不稳定性支配,但其时间很短(通常小于300μs),所以在这种情况下,杂质粒子输运的平均效应比新经典值稍大。而约束区杂质粒子输运则比新经典的值大很多,是反常的。在一定条件下低混杂波电流驱动可以改善等离子体粒子约束。     

托卡马克离子温度梯度湍流输运同位素定标修正中杂质的影响

托卡马克实验发现,在不同参数条件下,等离子体能量约束经验定标律会有或大或小的修正.为解释这种修正现象发生的原因,应用回旋动理学方法,对含重(钨)杂质等离子体离子温度梯度(ITG)(包括杂质模)湍流输运的同位素效应进行了数值研究.结果表明钨杂质效应极大地修改了同位素定标律和有效电荷效应.随着杂质离子电荷数Z和电荷集中度f_z的变化,同位素定标律在较大范围内变化. ITG模最大增长率定标大约为M_i~(-0.48→-0.12),杂质模的定标为M_i~(-0.46→-0.3),其中, M_i表示主离子质量数.在ITG模湍流中,有效电荷数越大,关于M_i的拟合指数偏离-0.5越远,表现为同位素质量依赖减弱.在两种模中,杂质电荷集中度越大,同位素质量依赖越弱.研究了杂质效应使定标关系发生偏离的原因,证实杂质种类、杂质电荷数和杂质浓度的不同,是引起同位素质量依赖发生改变的重要原因.结果证实并解释了不同参数条件下托卡马克同位素定标的差异性.研究成果可以为ITER实验安排及杂质相关输运实验中选择装置材料、工作气体和设置其他参数提供理论参考.     

共轭高聚物链中极化子生成的掺杂效应

在紧束缚近似下,用绝热动力学演化的方法研究了共轭高聚物链中低浓度掺杂对极化子生成位置的影响。研究发现,掺入杂质与注入电子的先后次序不同,极化子生成的位置会有很大差别,先注入电子后掺入杂质的情况下,在链端自由区与过渡区,极化子生成位置受杂质影响较小;而先杂质后电子的次序下,极化子的生成位置明显受到杂质的控制。该研究表明共轭高聚物链中极化子的生成位置可通过调节掺杂与电荷注入的次序加以控制,从而可达到间接改变载流子迁移率的目的。     

Re-entrant superconductivity from magnetic impurity interactions

The scattering of electrons in the superconducting phase is calculated including the exchange of magnetic impurity pairs. Providing that the RKKY coupling favors ferromagnetic alignment of the impurity spins, the superconducting transition temperature is found to exhibit a re-entrant behavior as a function of the impurity concentration.     

含单负材料的一维光子晶体的杂质模

采用转移矩阵的方法研究了含单负材料的一维光子晶体中掺入双层正常材料杂质时杂质模频率的变化问题.研究结果表明,杂质模频率与晶格常量的标度无关,且对晶格常量的涨落很不敏感.同时,通过增加杂质层厚度及层数发现,杂质模频率随之减小,而它的变化率随之增加,且杂质模消失在低频带边的速度会越来越快.     

Effect of a localized impurity on soliton dynamics in the Bose-Einstein condensates

By using a multiple-scale method,we analytically study the effect of a localized impurity on the soliton dynamics in the Bose-Einstein condensates.It is shown that a dark soliton can be transmitted through a repulsive (or attractive) impurity,while at the position of the localized impurity the soliton can be quasitrapped by the impurity.Additionally,we find that the strength of the localized impurity has an important effect on the dark soliton dynamics.With increasing strength of the localized impurity,the amplitude of the dark soliton becomes bigger,while its width is narrower,and the soliton propagates slower.     

STM tunneling through a quantum wire with a side-attached impurity

The STM tunneling through a quantum wire (QW) with a side-attached impurity (atom, island) is investigated using a tight-binding model and the non-equilibrium Keldysh Green function method. The impurity can be coupled to one or more QW atoms. The presence of the impurity strongly modifies the local density of states of the wire atoms, thus influences the STM tunneling through all the wire atoms. The transport properties of the impurity itself are also investigated mainly as a function of the wire length and the way it is coupled to the wire. It is shown that the properties of the impurity itself and the way it is coupled to the wire strongly influence the STM tunneling, the density of states and differential conductance.     

Regular and chaotic transport of impurities in steady flows

This paper considers the properties of the transport of impurity particles in steady fluid flows and describes the principal modes of particle motion. An impurity consisting of particles with a lower density than that of the medium is localized at stationary points of the flow, whereas a heavy impurity can perform a spatially unbounded motion. The conditions for the transition from the bounded motion of a heavy impurity to the long-range transport mode, which occurs as a result of a loss of the stability of the heteroclinic trajectory, are obtained for a model two-dimensional flow having an eddy-cell structure. A mode is found in which a particle, after being transported over a long distance, is trapped forever within the confines of one cell. The transition from regular to chaotic particle transport is analyzed. The question of the effect of a small noise (for example, molecular diffusion) on the character of the motion of a heavy impurity is investigated. It is shown that this effect is important at high viscosity and leads to a transition from bounded motion of the impurity particle to diffusion-type chaotic motion. (c) 1994 American Institute of Physics.     

杂质离子对有机共轭聚合物中极化子动力学性质的影响

基于一维紧束缚Su-Schrieffer-Heeger模型, 采用分子动力学方法, 讨论了杂质势的强度和杂质之间的距离对电子和空穴极化子动力学性质的影响. 研究结果表明: 1)当杂质势强度保持不变时, 两杂质离子之间的距离(d)在2-16个晶格常数变化时, 电子极化子的平均速度大于空穴极化子的平均速度, 这是由于电子、空穴极化子与杂质势的库仑作用不同而产生的差异, 同时极化子的平均速度随d的增加而增大; 若继续增加杂质离子之间的距离, 电子和空穴极化子的平均速度几乎保持不变, 仅有一些微小的振荡, 这是由于不同距离的杂质离子对电子和空穴极化子产生的势垒或势阱的叠加效果不同而引起的; 2)保持两杂质离子之间的距离不变时, 随着杂质势强度的增大, 电子和空穴极化子的平均速度均减小, 且空穴极化子的平均速度减小趋势更明显.     

Three impurity cluster in a diatomic linear chain

The modes of vibration of a three impurity cluster in a diatomic linear chain is studied. The configuration of the three impurity atoms is such that two of these go into next nearest neighbour sites in one of the sub-lattices whereas the third occupies the central in between site in the other sub-lattice. New local, gap and inband modes are seen to exist, besides the ones corresponding to the impurity pairs. A new feature which appears is that the frequencies of some of the pair modes remain totally unaffected in the presence of the third impurity atom.     

Ab initio study of surface electronic structure of phosphorus donor impurity on Ge(111)-(2×1) surface

We present the results of numerical modeling of the electronic properties of the Ge(111)-(2 × 1) surface in the vicinity of a P donor impurity atom near the surface. We have shown that, in spite of well-established bulk donor impurity energy level position at the very bottom of the conduction band, the surface donor impurity might produce an energy level below the Fermi energy, depending on impurity atom local environment. It has been demonstrated that the impurity located in subsurface atomic layers is visible in scanning tunneling microscopy experiment. The quasi-one-dimensional character of the impurity image observed in scanning tunneling microscopy experiments is confirmed by our computer simulations.     

The electron wind force in electromigration

The problem of the electron wind force acting on an impurity atom in a jellium metal, arising from the polarization of the electron density created by the flow of the electric current under a constant electric field, has been investigated. The impurity concentration is assumed to be small so that the impurity-impurity interaction can be neglected. We have used the scattering theory to treat the screening of the impurity by the electron gas in a nonlinear manner, and the pertubation due to the electric field is considered within the framework of the linearized Boltzmann equation. It is found that the driving force on the impurity can be expressed in terms of its residual resistivity, and this relationship is independent of the strength of the impurity potential. In the weak scattering limit the results of Bosvieux and Friedel are recovered. A close examination of the electronic polarization induced by the current, in the weak scattering limit, shows that there are terms in the electron density of second order in the impurity potential, which can be identified as the residual resistivity dipoles. However, their contribution to the driving force is found to be exactly zero.