Evaluation of the structural,optical and electrical properties of AZO thin films prepared by chemical bath deposition for optoelectronics

Aluminum doped zinc oxide (AZO) thin films for electrode applications were deposited on glass substrates using chemical bath deposition (CBD) method. The influence of deposition time on the structural, morphological, and opto-electrical properties of AZO films were investigated. Structural studies confirmed that all the deposited films were hexagonal wurtzite structure with polycrystalline nature and exhibited (002) preferential orientation. There is no other impurity phases were detected for different deposition time. Surface morphological images shows the spherically shaped grains are uniformly arranged on to the entire film surface. The EDS spectrum confirms the presence of Zn, O and Al elements in deposited AZO film. The observed optical transmittance is high (87%) in the visible region, and the calculated band gap value is 3.27 eV. In this study, the transmittance value is decreased with increasing deposition time. The room temperature PL spectrum exposed that AZO thin film deposited at (60 min) has good optical quality with less defect density. The minimum electrical resistivity and maximum carrier concentration values were observed as 8.53 × 10⁻³(Ω cm) and 3.53 × 10¹⁸ cm⁻³ for 60 min deposited film, respectively. The obtained figure of merit (ϕ) value 3.05 × 10⁻³(Ω/sq)^{- 1} is suggested for an optoelectronic device.     

Surface-plasmon-coupled emission of quantum dots

We studied surface plasmon-coupled emission (SPCE) of semiconductor quantum dots (QDs). These QDs are water-soluble ZnS-capped CdSe nanoparticles stabilized using lysine cross-linked mercaptoundecanoic acid. The QDs were spin-coated from 0.75% PVA solution on a glass slide covered with 50 nm of silver and a 5-nm protective SiO(2) layer. Excited QDs induced surface plasmons in a thin silver layer. Surface plasmons emitted a hollow cone of radiation into an attached hemispherical glass prism at a narrow angle of 48.5 degrees. This directional radiation (SPCE) preserves the spectral properties of QD emission and is highly p-polarized irrespective of the excitation polarization. The SPCE spectrum depends on the observation angle because of the intrinsic dispersive properties of SPCE phenomenon. The remarkable photostability can make QDs superior to organic fluorophores when long exposure to the intense excitation is needed. The nanosize QDs also introduce a roughness near the metal layer, which results in a many-fold increase of the coupling of the incident light to the surface plasmons. This scattered incident illumination transformed into directional, polarized radiation can be used simultaneously with SPCE to develop devices based on both quantum dot emission and light scattered from surface plasmons on a rough surface.     

Nonlinear Optical Susceptibility of Fe2O3 Thin Film Synthesized by a Modified Sol-Gel Method

The homogeneous transition metal oxide Fe₂O₃ thin films are synthesized in a modified sol-gel process by spin coating. The third order nonlinear optical susceptibility of the film is about 2 × 10^–9 esu at 488 nm wavelength by the z-scan method with a 180 femtosecond pulse laser beam. The film is expected to be useful for the application of nonlinear optical devices.     

Effect of post-deposition annealing temperature on RF-sputtered HfO2 thin film for advanced CMOS technology

Structural and electrical properties of HfO₂ gate-dielectric metal-oxide-semiconductor (MOS) capacitors deposited by sputtering are investigated. The HfO₂ high-k thin films have been deposited on p-type <100> silicon wafer using RF-Magnetron sputtering technique. The Ellipsometric, FTIR and AFM characterizations have been done. The thickness of the as deposited film is measured to be 35.38 nm. Post deposition annealing in N₂ ambient is carried out at 350, 550, 750 °C. The chemical bonding and surface morphology of the film is verified using FTIR and AFM respectively. The structural characterization confirmed that the thin film was free of physical defects and root mean square surface roughness decreased as the annealing temperature increased. The smooth surface HfO₂ thin films were used for Al/HfO₂/p-Si MOS structures fabrication. The fabricated Al/HfO₂/p-Si structure had been used for extracting electrical properties such as dielectric constant, EOT, interface trap density and leakage current density through capacitance voltage and current voltage measurements. The interface state density extracted from the G–V measurement using Hill Coleman method. Sample annealed at 750 °C showed the lowest interface trap density (3.48 × 10¹¹ eV⁻¹ cm⁻²), effective oxide charge (1.33 × 10¹² cm⁻²) and low leakage current density (3.39 × 10⁻⁹ A cm⁻²) at 1.5 V.     

Computer screen photo-excited surface plasmon resonance imaging

Angle and spectra resolved surface plasmon resonance (SPR) images of gold and silver thin films with protein deposits is demonstrated using a regular computer screen as light source and a web camera as detector. The screen provides multiple-angle illumination, p-polarized light and controlled spectral radiances to excite surface plasmons in a Kretchmann configuration. A model of the SPR reflectances incorporating the particularities of the source and detector explain the observed signals and the generation of distinctive SPR landscapes is demonstrated. The sensitivity and resolution of the method, determined in air and solution, are 0.145 nm pixel⁻¹, 0.523 nm, 5.13 × 10⁻³ RIU degree⁻¹ and 6.014 × 10⁻⁴ RIU, respectively, encouraging results at this proof of concept stage and considering the ubiquity of the instrumentation.     

A Promising Fluorooxoborate Framework with Flexibile Capability for Diverse Cations to Enhance the Second Harmonic Generation

Fluorooxoborates as potential deep ultraviolet (DUV) nonlinear optical (NLO) materials have exhibited diverse structures and NLO properties with metal cationic changes. Herein, the general mechanisms of metal cations on band gaps and optical properties in a series of typical fluorooxoborates have been clarified. It reveals that the framework of the emblematic 18-membered ring oxyfluorides has the flexibility of being able to contain different cations spanning from alkali to d¹⁰ metals by investigating the stability of the artificial CdB₅O₇F₃ structure. Besides, introducing d¹⁰ metal cations can enhance the second harmonic generation (3.1×KH₂PO₄ (KDP), d₃₆=0.39 pm V⁻¹) and also keep a DUV spectral transparency (E_g>6.2 eV). Thus, the d¹⁰-containing fluorooxoborate exhibits a great potential to be a new DUV optical material for nonlinear light-matter interactions.     

Comparison of optical and structural properties of nanostructure TiO2 thin film doped by Sn and Nb

The thin films of TiO₂ doped by Sn or Nb were prepared by sol–gel method under process control. The effects of Sn and Nb doping on the structural, optical and photo-catalytic properties of applied thin films have been studied by X-ray diffraction (XRD) high resolution transmission electron microscopy and UV–Vis absorption spectroscopy. Surface chemical state of thin films was examined by atomic X-ray photoelectron spectroscopy. XRD results suggest that adding impurities has a great effect on the crystallinity and particle size of TiO₂. Titania rutile phase formation in thin film was promoted by Sn⁴⁺ addition but was inhibited by Nb⁵⁺ doping. The activity of the photocatalyst was evaluated by photocatalytic degradation kinetics of aqueous methylene blue under UV and Visible radiation. The results show that the photocatalytic activity of the Sn-doped TiO₂ thin film have a larger degradation efficiency than Nb-doped TiO₂ under visible light, but under UV light photocatalytic activity of the Nb-doped TiO₂ thin film is better.     

Electrochemical and XPS measurements on thin oxide films on zirconium

The potentiodynamic growth of thin oxide films on zirconium electrodes was investigated by coulometric and simultaneous impedance measurements, as a function of the electrode potential (0 V ⩽ E ⩽ 9 V), the pH (0 ⩽ pH ⩽ 14) and the surface preparation (electropolishing, etching and mechanical polishing). The initial film thickness d₀ is at least 4–6 nm; with increasing potential, the oxide grows irreversibly by 2.6 nm/V (pH 0.3) up to 3.2 nm/V (pH 14). In Cl⁻- and ClO⁻₄-containing solutions the oxide growth is limited by localized corrosion. The oxide behaves like a typical insulator with a donor concentration N_D < 10¹⁹ cm⁻³ and a dielectric constant D = 31. Below −0.5 V (vs. SHE) only, th film behaves like an n-type semiconductor with N_D ≈ 3 × 10¹⁹ cm⁻³. From photoelectrochemical measurements a direct and an indirect transition with band gap energies of E_g = 5 eV and E_g = 2.8 eV could be derived. Anodic electron-transfer reactions (ETRs) are blocked at the homogeneous oxide surface, but cathodic ETRs are possible at larger overvoltages. Near the flatband potential E_fb ≈ −1.3 ± 0.2 V (vs. SHE) hydrogen evolution takes place with a simultaneous increase of the capacity which may be attributed to hydrogen incorporation. With XPS measurements the stoichiometry of the oxide film was determined as ZrO₂ at all the pH values examined, but a thin outer layer contained some hydroxide. Components of the forming electrolyte could not be detected (sulphate, borate and perchlorate < 1%), but etching in HF caused accumulation of F⁻ at the inner boundary.     

A Unique Blend of 2‐Fluorenyl‐2‐anthracene and 2‐Anthryl‐2‐anthracence Showing White Emission and High Charge Mobility

White‐light‐emitting materials with high mobility are necessary for organic white‐light‐emitting transistors, which can be used for self‐driven OLED displays or OLED lighting. In this study, we combined two materials with similar structures—2‐fluorenyl‐2‐anthracene (FlAnt) with blue emission and 2‐anthryl‐2‐anthracence (2A) with greenish‐yellow emission—to fabricate OLED devices, which showed unusual solid‐state white‐light emission with the CIE coordinates (0.33, 0.34) at 10 V. The similar crystal structures ensured that the OTFTs based on mixed FlAnt and 2A showed high mobility of 1.56 cm² V⁻¹ s⁻¹. This simple method provides new insight into the design of high‐performance white‐emitting transistor materials and structures.     

The development of conductive composite surfaces by a diffusion-limited in situ polymerization of pyrrole in sulfonated polystyrene ionomers

Electrically conductive composite surfaces were prepared by a diffusion-controlled in situ polymerization of pyrrole in the surface layer of sulfonated polystyrene ionomer films. Premolded films of the ionomer sulfonic acid derivatives were sequentially immersed in aqueous solutions of pyrrole and FeCl₃, and polymerization occurred only where both the monomer and the oxidant were present. The penetration of the polypyrrole (PPy) into the film was controlled by varying the immersion time in the monomer solution. The amount of PPy produced depended on the immersion time of the film in the monomer and the degree of sulfonation of the ionomer. Surface conductivities of 10⁻⁴-10⁻¹ S/cm were achieved with PPy concentrations from 2 to 22 wt % and composite layers as thin as 15 μm. Intermolecular interactions occurred between PPy and the ionomer by proton transfer. Incorporation of PPy also increased the tensile strength of the ionomer film, significantly increased its modulus above T_g, and inhibited melt flow. © 1997 John Wiley & Sons, Inc.     

In situ surface plasmon study of the electropolymerization of Fe(vbpy)3 onto a gold surface

Sequential multilayer electropolymerization of Fe(vbpy)₃²⁺ (vbpy=4-vinyl-4′-methyl-2,2′-bipyridine) onto a thin gold electrode was followed in situ with surface plasmon spectroscopy (SPS) using a 1 mW HeNe laser at 6328 Å. The robustness of the gold film electrode necessary for electrochemical deposition in 0.10 M tetraethylammonium perchlorate+acetonitrile is imparted by use of a thin film of 3-mercaptopropyl-trimethoxysilane attached to a SF10 slide to which the metal is covalently bonded. As each polymer layer is deposited by cycling a potentiostat from 0.0 to −1.75 and back to 0.0 V, a plasmon spectrum (reflectivity versus prism angle) is obtained. SP analysis of the angular shift of the spectrum, which increases as the polymer layer thickens, yields an estimate of both the thickness and index of refraction of the polymer film. We found that the plasmon spectrum shifts to higher angles as the polymer layer thickens, along with a progressive decrease in the depth of the resonance minimum. Our modeling shows this unusual spectral behavior involving the resonance minimum is consistent with a Fe(vbpy)₃²⁺ chromophore absorption at 6328 Å, along with thickening of the polymer film. This work demonstrates that SPS is a viable in situ technique for obtaining thickness measurements of electrodeposited thin films.     

An Electrochemical Sensing Platform Based on Graphene Oxide and Molecularly Imprinted Polymer Modified Electrode for Selective Detection of Amoxicillin

An electrochemical sensing platform based on composite material, consisting of molecularly imprinted polymer coated on graphene oxide (MIP-GO), was developed for selective and sensitive analysis of amoxicillin (AMOX). The MIP-GO composite, which was fabricated by sol-gel polymerization after removal of template molecule, was deposited as a thin film on glassy carbon electrode, and then was electrochemically characterized by cyclic voltammetry and differential pulse voltammetry. The linear response for the determination of AMOX was obtained in the concentration range from 5.0×10⁻¹⁰ to 9.1×10⁻⁷ M under the most proper conditions and the detection limit was found to be 2.94×10⁻¹⁰ M.     

Demonstration of a surface plasmon-coupled emission (SPCE)-based immunoassay in the absence of a spacer layer

The technique of surface plasmon-coupled emission (SPCE) involves the coupling of light which is emitted from a fluorophore into the surface plasmon of an adjacent thin metal film, giving rise to highly directional emission. We have combined the advantages of SPCE with the high light collection efficiency of supercritical angle fluorescence by carrying out an immunoassay on a paraboloid array biochip in the absence of the conventional SPCE spacer layer normally used to minimize metal quenching of the fluorescence. In this work, we have successfully demonstrated an SPCE-based assay by utilizing the protein assay layer as the spacer layer. A novel 3 × 3 injection molded polymer biochip with paraboloid elements was used. The paraboloid elements served to enhance the light collection efficiency while the top surface was coated with a gold layer to use excitation of surface plasmons and detection of SPCE emission. Theoretical modeling of the gold-protein layer structure showed that the surface plasmon resonance angles were located in the detection range of the paraboloid biochip. The polarization dependence of SPCE emission was also demonstrated. Finally, a human IgG sandwich immunoassay was carried out which exhibited a limit of detection of ~10 ng/ml using 3σ. The results demonstrate the potential of the SPCE-based paraboloid array biochip as a novel platform for high-throughput analysis of biomolecular interactions.     

Zinc Oxide Defect Microstructure and Surface Chemistry Derived from Oxidation of Metallic Zinc: Thin-Film Transistor and Sensor Behavior of ZnO Films and Rods

Zinc oxide thin films are fabricated by controlled oxidation of sputtered zinc metal films on a hotplate in air at temperatures between 250 and 450 °C. The nanocrystalline films possess high relative densities and show preferential growth in (100) orientation. Integration in thin-film transistors reveals moderate charge carrier mobilities as high as 0.2 cm² V⁻¹s⁻¹. The semiconducting properties depend on the calcination temperature, whereby the best performance is achieved at 450 °C. The defect structure of the thin ZnO film can be tracked by Doppler-broadening positron annihilation spectroscopy as well as positron lifetime studies. Comparably long positron lifetimes suggest interaction of zinc vacancies (V_Zn) with one or more oxygen vacancies (V_O) in larger structural entities. Such V_O-V_Zn defect clusters act as shallow acceptors, and thus, reduce the overall electron conductivity of the film. The concentration of these defect clusters decreases at higher calcination temperatures as indicated by changes in the S and W parameters. Such zinc oxide films obtained by conversion of metallic zinc can also be used as seed layers for solution deposition of zinc oxide nanowires employing a mild microwave-assisted process. The functionality of the obtained nanowire arrays is tested in a UV sensor device. The best results with respect to sensor sensitivity are achieved with thinner seed layers for device construction.     

Rare earth Eu<Superscript>3+</Superscript> co-doped AZO thin films prepared by nebulizer spray pyrolysis technique for optoelectronics

Rare earth element (i.e.) europium co-doped aluminum zinc oxide (Eu:AZO) thin films were deposited on microscope glass slides by nebulizer spray pyrolysis with different Eu-doping concentrations (0, 0.5, 1, and 1.5%). The deposited films were investigated using X-ray diffraction, AFM, EDAX, FT-Raman, UV–visible, PL, and Hall effect measurements. X-ray confirmed the incorporation of aluminum and europium ions into the ZnO structure. All films have polycrystalline nature with hexagonal wurtzite structure at (002) direction. Topological depictions exhibited minimum surface roughness and low film thickness for pristine AZO thin film. EDAX study authorizes the existence of Zn, O, Al, and Eu in Eu: AZO thin films. Raman spectra exhibited the characteristic of ZnO-wurtzite structure (E₂-high) mode at 447?cm^?1. The deposited film showed high optical transmittance of ~90% in visible region, and the direct energy gap was around 3.30?eV for pristine AZO thin film. The PL spectra emitted a powerful UV emission situated at 388?nm, and it indicates that the film has good optical quality. The obtained large carrier concentration and less resistivity values are 4.42?×?10²¹?cm^?3 and 3.95?×?10^?4?Ω?cm, respectively, for 1.5% Eu-doped AZO thin film. The calculated figure of merit value is 17.29?×?10^?3 (Ω/sq)^?1, which is more suitable for the optoelectronic device.

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Measurement System for Very Small Photoelastic Constant of Polymer Films

We produced a new system for measuring the small photoelastic constant of a polymer thin film with a small birefringence. Using our mesurement system, we evaluated the photoelastic constant of a polymer film in real time by quantitative analysis. Photoelastic constants of 11.30 × 10⁻¹² Pa⁻¹ for a cellulose triacetate film and 78.38 × 10⁻¹² Pa⁻¹ for a polycarbonate film were obtained. Furthermore, we obtained a small photoelastic constant of 0.12 × 10⁻¹² Pa⁻¹ for a cycloolefin film for liquid crystal displays, using our new measurement system. This value is very small. We emphasize that, if a small change in retardation and stress cannot be detected simultaneously using our system, then we cannot obtain such a small photoelastic constant.     

Preparation and optical–electrical properties of Al-doped ZnO films

Among the various semiconducting metal oxide materials, ZnO thin films are highly attractive in the development of materials area. In this paper, Al-doped ZnO thin films were prepared by sol–gel dipping and drawing technology and their composition, structure and optical–electrical properties were investigated. XRD results shows that the Al-doped ZnO thin film is of polycrystalline hexagonal wurtzite structure, and the (002) face of the thin film has the strongest orientation at the annealing temperature of 550 °C. The surface resistance of Al-doped ZnO thin film firstly drops and then increases with the increase in annealing temperature. Al doping concentration is also an important factor for improving the conductivity of modified ZnO thin films, and the surface resistance has the tendency to drop at first and then to increase when the Al concentration is increasing. The surface resistance of modified ZnO thin films drops to the lowest point of 139 KΩ sq^?1 when the Al concentration is 1.6 at% and the annealing temperature is 500 °C. The light transmission measurements show that the doping concentration has little influence on light transmittance. The transmittance at the visible region of films is all over 80 %, and the highest value is up to 91 %.     

Spectroscopic diagnostics on CW-laser welding plasmas of aluminum alloys

In-process diagnostics intended to correlate spectrometric measurements to the occurrence of laser welding defects such as notches and blowholes have been carried out. The plasma light emitted during high-power CO₂ laser welding of a 6013 aluminum alloy was guided to an imaging spectrograph and the dispersed light was detected with a CCD system. A transient recorder was used to record the signal from a fast laser-power monitor and the sync signals from the CCD and a fast speed video camera. Accuracy of the measurements are discussed in relation to the low and fast acquisition rate approaches (58 spectra s⁻¹ and 4×10³ spectra s⁻¹, respectively) used in the experiments. Spectroscopic measurements at fast acquisition rates showed both an increase in the intensity of the overall spectral emission and the growth of lines corresponding to ionic aluminum species taking place right before the occurrence of weld defects.     

Self‐organization of striped pattern of refractive indices in photopolymer film

We report on a self‐organized striped pattern of refractive indices in a photopolymer film. Silicon oxide (SiO₂) particles (1.3‐μm diameter) were dispersed on a cover glass above a monomer mixture (bifunctional methacrylate monomer, cyanoethylmethacrylate, and 2,4,6‐trimethylbenzoyldiphenylphosphine oxide), and the sample was uniformly irradiated from a tube light source. The self‐organized striped pattern was observed inside a 0.45‐mm thickness photopolymer film. In contrast, no pattern was observed in a 0.45‐mm thickness sample photopolymerized without particles on a cover glass. The results suggest that the SiO₂ particles acted as “lenses” and produced a light distribution reflecting the shape of the light source used during the irradiation. The photopolymerization extended in depth according to the light distribution, and then the striped pattern was generated inside a medium. The photopolymer film with the striped pattern has an angular dependence in the transmittance as a result of the microstructure and can be applied to a flexible optical transmission filter. © 2004 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 42: 3351–3358, 2004     

Nonlinear optical properties of poly(fluorophenyl-diacetylene) evaporated films

A new insoluble polydiacetylene with fluoro-aromatic units directly bound to the π-conjugated main backbone has been obtained via solid-state polymerization induced by UV light, daylight and γ-rays. Third-order harmonic generation has been measured on poly(fluorophenyl-diacetylene) films prepared by the vacuum deposition method. The third-order nonlinear optical susceptibility of this poly(fluorophenyl-diacetylene) film was evaluated as χ⁽³⁾ = 7.3 × 10⁻¹¹ esu.