Co掺杂对Mn$lt;sub$gt;3$lt;/sub$gt;Sn$lt;sub$gt;1-$lt;em$gt;x$lt;/em$gt;$lt;/sub$gt;Co$lt;sub$gt;$lt;em$gt;x$lt;/em$gt;$lt;/sub$gt;C$lt;sub$gt;1.1$lt;/sub$gt;化合物的磁性质、熵变以及磁卡效应的影响

利用固态反应法制备了Mn₃Sn_1-xCo_xC_1.1 （x=0.05,0.1,0.2） 系列化合物,研究了Co掺杂对其磁性质、相变、熵变的影响. 随着Co掺杂量的增加,样品的居里温度由283 K先降到212 K （Mn₃Sn_0.9Co_0.1C_1.1） 后又升到332 K （Mn₃Sn_0.2Co_0.8C_1.1）,相变类型由一级相变逐渐转变为二级相变. 增大Co的掺杂量,Mn₃Sn_1-xCo_xC_1.1化合物的熵变峰值逐渐减小,磁熵变温区由9 K展宽到300 K. 当Co掺杂量为0.2时,相对制冷量达到最高,为103 J/kg （磁场强度为1.6 MA/m）. 由于室温附近良好的磁致冷效应,该类材料在磁制冷领域可能具有重要的应用前景. 关键词： 磁性质 相变 磁卡效应 相对制冷量     

Itinerant to relocalized transition of f electrons in the Kondo insulator CeRu4Sn6

The three-dimensional electronic structure and the nature of Ce 4f electrons of the Kondo insulator CeRu₄Sn₆ are investigated by angle-resolved photoemission spectroscopy, utilizing tunable photon energies. Our results reveal (i) the three-dimensional k-space nature of the Fermi surface, (ii) the localized-to-itinerant transition of f electrons occurs at a much high temperature than the hybridization gap opening temperature, and (iii) the “relocalization” of itinerant f-electrons below 25 K, which could be the precursor to the establishment of magnetic order.     

K2NiF4型Sr2CrO4的磁电性质研究

以SrO和CrO₂为原料, 在高温高压的条件下直接反应生成纯相的K₂NiF₄结构的Sr₂CrO₄多晶样品. 结构用粉末X射线衍射及GSAS精修表征. 磁化率测试显示样品存在一个弱的反铁磁相变, 奈尔温度为T_N=95 K. 在奈尔温度以上, 磁化率随温度的变化遵循居里-外斯定律. 对样品进行了电阻测试, 结果显示了样品的绝缘特性.     

钙钛矿锰氧化物(La_(1-x)Eu_x)_(4/3)Sr_(5/3)Mn_2O_7(x=0,0.15)的磁性和电性研究

通过传统固相反应法制备了钙钛矿锰氧化物(La1-xEux)4/3Sr5/3Mn2O7(x=0,0.15)多晶样品,并且对其磁性和电性进行了研究.磁性测量表明:随着温度的降低,样品经历了一个复杂的转变过程,在温度为T*时经历二维短程铁磁有序转变,在温度为TC时进入三维长程铁磁态.随着Eu的掺杂,T*和TC减小,并且样品(La0.85Eu0.15)4/3Sr5/3Mn2O7在低温区表现出自旋玻璃行为.电性质测量表明:在母体La4/3Sr5/3Mn2O7中La位掺杂Eu后电阻率明显变大,金属绝缘转变温度TMI降低,磁电阻峰值增大.这些影响归因于较小的Eu3+离子替代La3+离子导致平均离子半径减小,晶格发生畸变.此外,较小的Eu3+离子优先占据层间岩盐层的R-site,使La3+,Sr3+,Eu3+离子在(La0.85Eu0.15)4/3Sr5/3Mn2O7中的分布更加有序,所以x=0.15的样品的ρ-T曲线只有一个峰.     

一级磁结构相变材料Mn0.6Fe0.4NiSi0.5Ge0.5和Ni50Mn34Co2Sn14的磁热效应与磁场的线性相关性

磁熵变（△S_M）与磁场（μ₀H）的相关性已在很多二级相变材料中被研究并报道,但一级相变材料的磁热效应与磁场相关性还少有报道.本文在具有一级磁结构相变的Mn_0.6Fe_0.4NiSi_0.5Ge_0.5材料中研究发现△S_M与μ₀H存在线性相关性,并通过麦克斯韦关系式的数值分析详细讨论了这一线性相关性的来源.同时,进一步发现在低磁场时,△S_M近似正比于μ₀H的平方.该线性相关性同样在一级磁结构相变Ni₅₀Mn₃₄Co₂Sn₁₄材料中得到了印证.但由于一级磁弹相变LaFe_11.7Si_1.3材料相变温度具有更强的磁场依赖性,不具有△S_M的线性相关性,因此,本研究表明,当磁结构相变材料的相变温度具有弱磁场依赖性时,△S_M与μ₀H具有线性相关性.进而,在磁场未达到相变饱和磁场以下,利用△S_M与μ₀H的线性相关性可以有效推测更高磁场下的△S_M.     

准一维Cr基超导体RbCr3As3的超导能隙

RbCr₃As₃是具有[（Cr₃As₃）^-]_∞线性链的准一维超导体,超导转变温度约为6.6 K.对RbCr₃As₃单晶进行了电输运和极低温热输运性质的研究.低温下,拟合了RbCr₃As₃正常态电阻率随温度的变化,发现其满足费米液体行为.通过拟合超导转变温度随磁场的关系,得到RbCr₃As₃单晶的上临界场约为25.6 T.对RbCr₃As₃进行了零场下的极低温热导率测量,得到其剩余线性项为7.5 μW·K^-2·cm^-1,占正常态热导率值的24%.测量不同磁场下RbCr₃As₃的热导率,发现与单带s波超导体相比较,RbCr₃As₃剩余线性项随磁场增加相对较快.这些结果表明RbCr₃As₃单晶很可能是有节点的非常规超导体.     

Evidences of dense Kondo behaviour in the U-Au system: Electrical and magnetic investigations in U14Au51 and UAu2

U₁₄Au₅₁ and UAu₂ were recently demonstrated the two correct phases stable at room temperature in the U-Au system. Magnetic susceptibility (1.5–300 K) and electrical resistivity (10–800 K) measurements were performed in samples of both phases. Magnetic susceptibility temperature behaviour gives evidences of an antiferromagnetic transition at 23 K in U₁₄Au₅₁, whereas no magnetic order is detected in UAu₂. In both compounds, Kondo-like logarithmic behaviour in electrical resistivity temperature trend is found. Effects already observed in U₂Zn₁₇ and UAl₂ are respectively found in U₁₄Au₅₁ and UAu₂. Possible “heavy fermion” properties of these compounds are discussed.     

Spin glass behaviour and magnetic anisotropy in DyFe4Al8 single crystals

Measurements of electrical resistivity, AC and DC magnetic susceptibilities of a DyFe₄Al₈ single crystal were performed in the temperature range 4.2–300K. A thermomagnetic effect was found below 30K. The strong anisotropy of the magnetic susceptibility occurs in the whole temperature range and is very pronounced at low temperatures. A T²-dependence of the electrical resistivity in the temperature range 4.2–100K and an antiferromagnetic transition at 185K were found. A cusp in the AC susceptibility was observed below 100K with a maximum at 30K.     

Superconducting and magnetic properties of La1-xGdxRu2 and La1−xPrxRu2 mixed crystals

LaRu₂ in contrast to CeRu₂ shows the normal T_c-depression by magnetic rare earth ions. This depression is much larger for praseodymium than for gadolinium.     

Electron spin resonance in GdT2Sn2 compounds (T = Ni, Cu, Ru, Pd, Ag)

ESR studies in the GdT₂Sn₂ (T = 3d or 4d transition metals) powdered samples were performed. All investigated compounds are bottlenecked systems. The thermal broadening of the linewidth increases when the number of transition metal d electrons decreases. The Δg shift is equal to zero for T = 3d and is negative for T = 4d metals.     

Ln2Sn2O7：Er3+纳米晶的制备及发光性能研究

采用溶胶-凝胶法合成Ln₂Sn₂O₇:Er³⁺(Ln=La,Gd,Y)纳米晶。通过X射线衍射和场发射扫描电子显微镜测试了样品的晶体结构和形貌,同时对样品的上转换发光性能进行了测试。结果表明:在980 nm连续激发光的激发下,样品主要表现为绿光发射。发射中心在528,549 nm的绿光和672 nm处的红光发射分别对应Er³⁺离子的⁴S_3/2→⁴I_15/2、²H_11/2→⁴I_15/2和 ⁴F_9/2→⁴I_15/2跃迁。以La₂Sn₂O₇:Er³⁺纳米晶为例,Er³⁺离子的摩尔分数为7%、退火温度为1 150℃是其制备的最佳条件,此时其各个发射峰的强度最高。对La₂Sn₂O₇:Er³⁺的发光强度与激发功率关系的研究表明,其绿光和红光发射均为双光子过程。激发光吸收和能量转移是La₂Sn₂O₇:Er³⁺纳米晶上转换发光的主要机制。     

钙钛矿型锰氧化物(La$lt;sub$gt;0.8$lt;/sub$gt;Eu$lt;sub$gt;0.2$lt;/sub$gt;)$lt;sub$gt;4/3$lt;/sub$gt;Sr$lt;sub$gt;5/3$lt;/sub$gt;Mn$lt;sub$gt;2$lt;/sub$gt;O$lt;sub$gt;7$lt;/sub$gt;的磁性和电性研究

采用传统固相反应法制备钙钛矿型锰氧化物 (La_0.8Eu_0.2)_4/3Sr_5/3Mn₂O₇多晶样品, X-射线衍射分析表明, 样品(La_0.8Eu_0.2)_4/3Sr_5/3Mn₂O₇结构呈现良好的单相. 通过磁化强度随温度的变化曲线(M-T)、不同温度下磁化强度随磁场的变化曲线(M-H)和电子自旋共振谱发现: 在300 K以下, 随着温度的降低, 样品先后经历了二维短程铁磁有序转变 (T_C^2D ≈ 282 K)、三维长程铁磁有序转变(T_C^3D ≈ 259 K)、奈尔转变(T_N ≈ 208K)和电荷有序转变(T_CO ≈ 35 K); 样品 (La_0.8Eu_0.2)_4/3Sr_5/3Mn₂O₇在T_N以下, 主要处于反铁磁态; 在T_C^3D达到370 K时, 样品处于铁磁-顺磁共存态, 在370 K以上时样品进入顺磁态. 此外, 分析电阻率随温度的变化曲线(ρ-T)得到: 样品在金属-绝缘转变温度(T_P ≈ 80 K)附近出现最大磁电阻值, 其位置远离T_C^3D, 表现出非本征磁电阻现象, 其磁电阻值约为61%. 在T_CO以下, 电阻率出现明显增长, 这是由于温度下降使原本在高温部分巡游的e_g电子开始自发局域化增强所致. 通过对 (La_0.8Eu_0.2)_4/3Sr_5/3Mn₂O₇的ρ-T 曲线拟合, 发现样品在高温部分的导电方式基本遵循小极化子的导电方式. 关键词： 磁性 电性 金属-绝缘转变温度 电子自旋共振     

Physcio-chemical properties of the non-stoichiometric VS2 and V5S8 phases

Density, Laue back-reflection and powder X-ray measurements have confirmed a previous structural determination of the VS₂-phase. Measurements of the temperature dependence of the magnetic susceptibility and electrical resistivity of VS₂ in the temperature range 100–300°K give evidence that in this structure, as in V₅S₈, there are V atoms with both localized and delocalized d-electrons leading to a paramagnetic susceptibility containing a temperature-independent component and a component in which the permanent magnetic dipoles give rise to a Curie-Weiss behavior.     

Electrical and magnetic properties of polyaniline/Fe3O4 nanostructures

We report on electrical and magnetic properties of polyaniline (PANI) nanotubes (150 nm in diameter) and PANI/Fe₃O₄ nanowires (140 nm in diameter) containing Fe₃O₄ nanoparticles with a typical size of 12 nm. These systems were prepared by a template-free method. The conductivity of the nanostructures is 10⁻¹–10⁻² S/cm; and the temperature dependent resistivity follows a ln ρT^−1/2 law. The composites (6 and 20 wt% of Fe₃O₄) show a large negative magnetoresistance compared with that of pure PANI nanotubes and a considerably lower saturated magnetization (M_s=3.45 emu/g at 300 K and 4.21 emu/g at 4 K) compared with the values measured from bulk magnetite (M_s=84 emu/g) and pure Fe₃O₄ nanoparticles (M_s=65 emu/g). AC magnetic susceptibility was also measured. It is found that the peak position of the AC susceptibility of the nanocomposites shifts to a higher temperature (>245 K) compared with that of pure Fe₃O₄ nanoparticles (190–200 K). These results suggest that interactions between the polymer matrix and nanoparticles take place in these nanocomposites.     

Magnetic structures of R3Cu4Si4 (R=Dy, Ho and Er)

Polycrystalline samples of R₃Cu₄Si₄ (R=Dy, Ho, Er) intermetallics were studied with neutron diffraction methods. All of them crystallize in the orthorhombic structure of Gd₃Cu₄Ge₄-type and order antiferromagnetically at low temperatures. Magnetic moments localized at the rare earth atoms, that occupy two non-equivalent 2d and 4e sublattices, order simultaneously in Dy₃Cu₄Si₄. The order is described by the propagation vector accompanied by , δ=0.025(2). In Ho₃Cu₄Si₄ two propagation vectors are needed to model the magnetic order. These are: for the 4e sublattice, which disorders as the first when the temperature increases, and for the 2d sublattice. A similar situation is observed for Er₃Cu₄Si₄ where the propagation vectors are: k=(0,1−δ,0), δ=0.097(2) for the 4e sublattice, which disorders as the first with increasing temperature, and , δ=0.0015(6) for the 2d sublattice.     

(1-x)Sr_3Sn_2O_7+xCa_3Mn_2O_7陶瓷合成及其光电性能

为了寻求新的非常规多铁性材料,采用固相合成方法制备具有Ruddlesden-Popper结构的(1-x)Sr_3Sn_2O_7+x Ca_3Mn_2O_7(SSO+CMO)(x=0,0.05,0.10,0.15,0.20)系列陶瓷.通过X射线衍射、紫外可见光谱和磁性测量,发现SSO+CMO陶瓷为单一正交相结构,空间群为A21am.随着掺杂量x的增加,样品的晶胞参数和体积相应地减小;在室温不同频率下,样品的介电常数和介电损耗随着频率增加而减小,且在x=0.1时有弱的铁磁性.     

Magnetic properties of the hexagonal NdNi5 and NdCu5 compounds

Magnetization and resistivity measurements performed on the hexagonal NdNi₅ and NdCu₅ compounds are presented. For NdNi₅, magnetization was measured on a single crystal along the three main axes of the orthohexagonal cell. This compound orders ferromagnetically at T_c = 7 K, a being the easy magnetization axis. Quantitative analysis of the experimental data led to the determination of the 4f-Nd and 3d-Ni contributions to the magnetization. In particular crystal field parameters were determined which account for inelastic neutron scattering data. Two original features of the compounds magnetic behaviour due to crystal field effects are noted: i) in the basal plane a large anisotropy of the magnetic moment which strongly increases with the magnetic field between 11 and 130 kOe; ii) a large decrease of the Nd moment during the rotation toward the c axis driven by the field. NdCu₅ orders also ferromagnetically at 15 K. The Nd moment lies perpendicular to c, and its reduction by the crystal field seems smaller than in NdNi₅.     

The effects of Cu doping on the magnetoresistive behavior of perovskites La0.7Ca0.3MnO3

The electronic and magnetic properties of Cu-doped perovskite La_0.7Ca_0.3Mn_1−xCu_xO₃ obtained by doping Cu on its Mn sites have been studied. The perovskite structure was found to remain intact up to the highest doping level of x=0.20. At low Cu concentration (x=0.05) the temperature-dependence of resistivity of the material exhibited up to two peaks corresponding to the magnetic transitions from the PM to the FM phase, and from the FM to the AFM phase. In general, the doping level was found to suppress the ferromagnetic ordering of the material, increase its resistivity, and produce large values of magnetoresistance near the resistivity peak. These results were explained as due to the formation of the antiferromagnetic phase.     

Tb掺杂双层锰氧化物La_(4/3)Sr_(5/3)Mn_2O_7的磁熵变和电输运性质

研究了Tb掺杂对双层锰氧化物La_(4/3)Sr_(5/3)Mn_2O_7磁熵变和电输运性质的影响.样品采用传统固相反应法制备,两样品的名义组分可以表示为(La_(1-x)Tb_x)_(4/3)Sr_(5/3)Mn_2O_7(x=0,0.025),磁场为7 T时的最大磁熵变?S_M分别为-4.60 J/(kg·K)和-4.18 J/(kg·K).比较后发现,Tb元素的掺杂使得最大磁熵变值减小,但同时增大了相对制冷温区.电性测量结果表明,x=0.025的样品在高温区的导电机制可以用小极化子模型解释,与母体三维变程跳跃模型不同;当温度降低至三维长程铁磁有序温度(T_c~(3D))附近时,掺杂样品发生金属绝缘相变;掺杂后样品在T_c~(3D)附近,磁电阻取得极大值(约为56%),表明是本征磁电阻效应.     

Structural stabilities and electrical properties of Ba_8Ga_(16-x)Cu_xSn_(30) single crystals under high temperatures

Single crystalline samples of type-I and type-VIII Ba_8Ga_(16-x)Cu_xSn_(30)(x = 0,1) clathrates are prepared by the Snflux method.Effects of Cu-doping on stability and electrical properties of Ba8Ga16Sn30 single crystal are explored by first-principle and experiment.All samples are heated to different high temperatures and maintained at these temperatures for 120 min and then cooled to room temperature to explore their structural stabilities.Results from DTA and powder xray diffraction analysis indicate that type-I Ba_8Ga_(16)Sn_(30) structure is transformed into type-VIII phase after the sample has been heated to 185℃.Type-VIII BGS is stable during heating and cooling,but type-VIII Ba_8Ga_(15)CuSn_(30) decomposes into Sn and Ba(Ga/Sn)_4 during cooling.Meanwhile,the electrical properties of type-I samples are measured,their electrical conductivities are enhanced,and the Seebeck efficient is reduced with Cu substitution.The type-I samples after phase transformations show the electrical characteristics of type-VIII samples.