多层膜界面结构探测技术

分别以丙醇锆和正硅酸乙酯为原料,采用溶胶-凝胶工艺制备了性能稳定的ZrO2和SiO2溶胶。用旋转镀膜法在K9玻璃上分别制备了SiO2单层膜、ZrO2单层膜和ZrO2/SiO2/ZrO2三层膜。采用椭偏仪测量薄膜的厚度与折射率,用紫外-可见分光光度计测量了薄膜的透过率,利用TFCalc_Demo模系设计软件,采用三层理论模型对薄膜的透过率进行模拟,用扫描电镜(SEM)观察了三层膜的断面结构,用X射线光电子能谱仪(XPS)测量了薄膜的成分随深度方向的变化,进一步验证了ZrO2/SiO2/ZrO2三层膜之间的渗透关系,同时对多层膜的界面结构探测方法起到了借鉴作用。     

ZrO_2/SiO_2溶胶-凝胶薄膜膜层间的渗透行为

分别以丙醇锆和正硅酸乙酯为原料,采用溶胶-凝胶工艺制备了性能稳定的ZrO2和SiO2溶胶。用旋转镀膜法在K9玻璃上分别制备了单层SiO2薄膜、单层ZrO2薄膜、ZrO2/SiO2双层膜和SiO2/ZrO2双层膜。采用原子力显微镜观察了薄膜的表面形貌,用椭偏仪测量薄膜的厚度与折射率,用紫外-可见光分光光度计测量了薄膜的透射率。对薄膜的透射光谱和椭偏仪模拟的数据进行分析,发现SiO2/ZrO2双层膜之间的渗透十分明显,而ZrO2/SiO2双层膜之间几乎不发生渗透。利用TFCalc模系设计软件,采用三层膜模型对薄膜的透射率进行模拟,得出的透射曲线与用紫外-可见光分光光度计测量的透射曲线十分符合。     

ZrO2/SiO2溶胶-凝胶薄膜膜层间的渗透行为

 分别以丙醇锆和正硅酸乙酯为原料，采用溶胶-凝胶工艺制备了性能稳定的ZrO₂和SiO₂溶胶。用旋转镀膜法在K9玻璃上分别制备了单层SiO₂薄膜、单层ZrO₂薄膜、ZrO₂/ SiO₂双层膜和SiO₂/ZrO₂双层膜。采用原子力显微镜观察了薄膜的表面形貌，用椭偏仪测量薄膜的厚度与折射率，用紫外-可见光分光光度计测量了薄膜的透射率。对薄膜的透射光谱和椭偏仪模拟的数据进行分析，发现SiO₂/ZrO₂双层膜之间的渗透十分明显，而ZrO₂/SiO₂双层膜之间几乎不发生渗透。利用TFCalc模系设计软件,采用三层膜模型对薄膜的透射率进行模拟，得出的透射曲线与用紫外-可见光分光光度计测量的透射曲线十分符合。     

ZrO2/SiO2溶胶-凝胶薄膜膜层间的渗透行为

分别以丙醇锆和正硅酸乙酯为原料,采用溶胶-凝胶工艺制备了性能稳定的ZrO2和SiO2溶胶。用旋转镀膜法在K9玻璃上分别制备了单层SiO2薄膜、单层ZrO2薄膜、ZrO2/ SiO2双层膜和SiO2/ZrO2双层膜。采用原子力显微镜观察了薄膜的表面形貌,用椭偏仪测量薄膜的厚度与折射率,用紫外-可见光分光光度计测量了薄膜的透射率。对薄膜的透射光谱和椭偏仪模拟的数据进行分析,发现SiO2/ZrO2双层膜之间的渗透十分明显,而ZrO2/SiO2双层膜之间几乎不发生渗透。利用TFCalc模系设计软件,采用三层膜模型对薄膜的透射率进行模拟,得出的透射曲线与用紫外-可见光分光光度计测量的透射曲线十分符合。     

溶胶-凝胶法制备BaTiO3/SrTiO3多层膜的介电增强效应

采用溶胶凝胶法,在PtTiSiO2Si衬底上逐层制备了BaTiO3SrTiO3多层膜.从多层膜的XRD图可看出明显的双峰,分别对应为BaTiO3和SrTiO3的特征峰,表明样品已形成了多层膜结构.与同厚度的Ba05Sr05TiO3单层膜比较,BaTiO3SrTiO3多层膜的介电系数得到了明显的增强,在频率为10kHz时,周期为66nm的BaTiO3SrTiO3多层膜相对于同厚度的Ba05Sr05TiO3薄膜的介电系数从245增强到595,而损耗依然保持较低,分别为0029和0033.研究同时表明,BaTi 关键词： 溶胶-凝胶法 多层膜 介电增强     

温度对涂有溶胶-凝胶多层干涉膜的卤钨灯光谱的影响

本文叙述了两个问题.首先,采用溶胶-凝胶浸渍水解法在H4汽车灯上制备了多层干涉膜.该膜层温度升高使这种灯透过膜层的光谱有所移动,于是引起灯发射光谱的变化.其次,我们研究了温度对膜材料光学性质的影响.     

Co-Zr/Pd多层膜的磁性与结构

Co-Zr/Pd多层膜由高频溅射方法制得．磁性合金Co-Zr层厚度固定为1.8nm，改变Pd层厚度0.5—6nm．由振动样品磁强计测量，发现随Pd层厚度增加，磁化强度发生周期性振荡变化，周期约为1nm，这是由Pd层的极化振荡引起的．经X射线衍射测得Pd层厚度超过1.3nm时，磁性合金Co-Zr层发生晶化，而厚的Co-Zr单层膜是非晶结构．X射线大角衍射图中的超晶格峰表明，在Co-Zr层和Pd层之间存在相关生长．而且还发现，随Pd层厚度增加，样品在垂直膜面方向的晶粒尺寸及fcc（111）面的面间距发生周期性 关键词：     

软X射线多层膜及多层膜光栅的研究进展

对目前的几种软Ｘ射线光学元件的性能作了简要的阐述和分析。综合介绍了多层膜作为软Ｘ射线光学元件的新进展。同时对多层膜光栅这种新型软Ｘ射线光学元件的原理、性能、制作工艺进行了详细的说明。     

Al和MgF2多层滤光膜光谱及其环境稳定性

 采用真空热蒸发和电子束蒸发方法,制备了Al和MgF₂ 多层滤光膜,并在100,150,200, 300 ℃的真空环境中进行了热处理,考察了真空热处理温度对多层滤光膜光谱、形貌和环境稳定特性的影响。结果表明,经过真空热处理后,滤光膜表面粗糙度降低,峰值透射率升高,半宽度增大。随着在实验室干燥环境中放置时间的增加,未热处理以及300 ℃热处理样品的透射率峰位向长波方向有较大的移动,峰值透射率降低,可见光抑制特性减弱。而150, 200 ℃热处理样品的透射率峰位移动很小,峰值透射率及可见光抑制特性基本保持不变,具有很好的环境稳定性。     

Al和MgF2多层滤光膜光谱及其环境稳定性

采用真空热蒸发和电子束蒸发方法,制备了Al和MgF2 多层滤光膜,并在100,150,200, 300 ℃的真空环境中进行了热处理,考察了真空热处理温度对多层滤光膜光谱、形貌和环境稳定特性的影响。结果表明,经过真空热处理后,滤光膜表面粗糙度降低,峰值透射率升高,半宽度增大。随着在实验室干燥环境中放置时间的增加,未热处理以及300 ℃热处理样品的透射率峰位向长波方向有较大的移动,峰值透射率降低,可见光抑制特性减弱。而150, 200 ℃热处理样品的透射率峰位移动很小,峰值透射率及可见光抑制特性基本保持不变,具有很好的环境稳定性。     

ZnO/SiO2 复合薄膜的光学性能

采用溶胶-凝胶法在玻璃衬底上制备ZnO/SiO₂复合薄膜,分别用XRD、TEM、SEM对样品的结构和形貌进行表征,并研究了不同ZnO含量对复合薄膜透过率及荧光特性的影响。结果表明,样品经500 ℃退火处理生成了SiO₂和ZnO,其晶粒尺寸为18.7 nm,薄膜具有双层结构。复合薄膜的透过率随着其中ZnO含量的增加而降低,禁带宽度减小,光学吸收边红移。样品在355 nm波长激发下产生了384 nm的紫外发射峰和440 nm的蓝光发射带,并随ZnO含量的增加而增强,它们分别来自ZnO的电子-空穴复合发光和缺陷发光,及ZnO/SiO₂复合薄膜双层结构的缺陷发光。     

飞秒激光用多层介质膜脉宽压缩光栅的设计

以薄膜光学的干涉理论和衍射光学的傅里叶模式理论为基础，给出了0.8μm飞秒激光器用多层介质膜脉宽压缩光栅的理论设计；设计采用H3L(HL)^9H0.5L2.4H的多层介质膜为基底，当刻蚀后表面浮雕结构的占宽比为0.35，线密度为1480线/mm，槽深为0.2μm，顶层HfO₂的剩余厚度为0.15μm时，对于Littrow角度(36.7°)和TE波模式入射的衍射光栅其-1级衍射效率达到95％以上. 关键词： 飞秒激光 脉宽压缩光栅 多层介质膜     

Reflection coefficient of ultrasonic waves as a measure of interface stresses in high pressure multi-layer cylinders

Abstract

Contact stresses in high pressure multi-layer cylinders are sometimes measured using ultrasonic technique. As a measure of the contact stresses the coefficient of reflection of ultrasonic waves from the contact interface between two adjacent outer layers is applied. The coefficient of reflection is an involved function of several parameters. Experimental and theoretical investigations show that this function may change non-monotonously with frequency of ultrasonic waves which may lead to an ambiguity of the assumed criterion. In order to check this function for higher frequencies, measurements of the reflection coefficient from a contact interface between plane steel samples were made for the frequencies up to 190 MHz.     

Polar interface and surface optical vibration spectra in multi-layer wurtzite quantum wires： transfer matrix method

The polar interface optical （IO） and surface optical （SO） phonon modes and the corresponding Froehlich electron phonon-interaction Hamiltonian in a freestanding multi-layer wurtzite cylindrical quantum wire （QWR） are derived and studied by employing the transfer matrix method in the dielectric continuum approximation and Loudon＇s uniaxial crystal model. A numerical calculation of a freestanding wurtzite GaN/AlN QWR is performed. The results reveal that for a relatively large azimuthal quantum number m or wave-number kz in the free z-direction, there exist two branches of IO phonon modes localized at the interface, and only one branch of SO mode localized at the surface in the system. The degenerating behaviours of the IO and SO phonon modes in the wurtzite QWR have also been clearly observed for a small kz or m. The limiting frequency properties of the IO and SO modes for large kz and m have been explained reasonably from the mathematical and physical viewpoints. The calculations of electron-phonon coupling functions show that the high-frequency IO phonon branch and SO mode play a more important role in the electron phonon interaction.     

Photon tunneling and transmittance resonance through a multi-layer structure with a left-handed material

This paper investigates the photon tunneling and transmittance resonance through a multi-layer structure including a left-handed material(LHM).An analytical expression for the transmittance in a five-layer structure is given by the analytical transfer matrix method.The transmittance is studied as a function of the refractive index and the width of the LHM layer.The perfect photon tunneling results from the multi-layer structure,especially from the relation between the magnitude of the refractive index and the width of the LHM layer and those of the adjoining layers.Photons may tunnel through a much greater distance in this structure.Transmittance resonance happens,the peaks and valleys appear periodically at the resonance thickness.For an LHM with inherent losses,the perfect transmittance is suppressed.     

表面吸附K原子的多层FeSe/SrTiO3(001)薄膜的抗磁响应的原位测量

SrTiO₃（001）单晶表面上生长的单层FeSe薄膜显示出了超乎寻常的高温超导电性,其超导增强机制的一个重要因素是电子由衬底转移到了单层FeSe薄膜当中.基于此认识,研究者们在吸附了钾（K）原子的多层FeSe薄膜表面上观察到了类似超导能隙的隧穿能谱和光电子能谱.但这种自上而下的电子掺入方式在多层FeSe薄膜表面上可能引起的高温超导电性,还缺乏零电阻或迈斯纳效应等物性测量实验的直接证实.本研究利用自行研制的一台特殊的多功能扫描隧道显微镜,在生长于SrTiO₃（001）衬底上的多层FeSe薄膜表面上,不但观察到了超导能隙随K吸附量的变化,而且利用原位双线圈互感测量技术,成功地的观察到了该薄膜的抗磁响应,并由此确定了该薄膜样品呈现迈斯纳效应的超导转变温度为23.9 K.其穿透深度随温度的变化呈二次幂指数关系,表明该体系的超导序参量很可能具有S^±配对对称性.     

Electrohydrodynamic direct-writing of conductor–insulator–conductor multi-layer interconnection

A multi-layer interconnection structure is a basic component of electronic devices, and printing of the multi-layer interconnection structure is the key process in printed electronics. In this work, electrohydrodynamic direct-writing （EDW） is utilized to print the conductor-insulator--conductor multi-layer ~nterconne~ction structure. Silver ink is chosen to print the conductor pattern, and a polyvinylpyrrolidone （PVP） solution is util~zed to f~bricate the insulator layer between the bottom and top conductor patterns. The influences of EDW process parameters on the line width of the printed conductor and insulator patterns are studied systematically. The obtained ~es~l~s show that the line width of the printed structure increases with the increase of the flow rate, but decreases with the increase of applied voltage and PVP content in the solution. The average resistivity values of the bottom and top silver conductor tracks are determined to be 1.34 × 10-7 Ω.m and 1.39×10-7 Ω.m, respectively. The printed PVP layer between the two conductor tracks is well insulated, which can meet the insulation requirement of the electronic devices. This study offers an alternative, fast, and cost-effective method of fabricating conductor-insulator-conductor multi-layer interconnections in the electronic industry.     

Photon tunneling and transmittance resonance through a multi-layer structure with a left-handed materialvspace2pt

This paper investigates the photon tunneling and transmittance resonance through a multi-layer structure including a left-handed material(LHM). An analytical expression for the transmittance in a five-layer structure is given by the analytical transfer matrix method. The transmittance is studied as a function of the refractive index and the width of the LHM layer. The perfect photon tunneling results from the multi-layer structure, especially from the relation between the magnitude of the refractive index and the width of the LHM layer and those of the adjoining layers. Photons may tunnel through a much greater distance in this structure. Transmittance resonance happens, the peaks and valleys appear periodically at the resonance thickness. For an LHM with inherent losses, the perfect transmittance is suppressed.