Influence of substrate temperature on the structural and optical properties of crystalline ZnO films obtained by pulsed spray pyrolysis

In this work, we report on the structural and optical properties of ZnO films deposited by pulsed spray pyrolysis at relatively low temperatures, compatible with a large variety of substrates and processing technologies. Crystalline ZnO films were deposited onto glass substrates using zinc acetate dihydrate dissolved in distilled water with concentration of 0.2 M. The temperature of the substrate was varied in the range T_s = 473–673 K with ΔТ = 50 K. Effect of T_s were investigated by scanning electron microscopy, x‐ray diffraction and energy dispersive x‐ray, and optical spectroscopies. Also, the influence of T_s on the grain size, phase composition, texture quality, coherent scattering domain size, crystal lattice parameters, chemical composition, transmission coefficient, and the bang gap of the ZnO films were studied. X‐ray diffraction analysis revealed that films were polycrystalline with hexagonal phase and showed as preferential orientation (101) at T_s < 573 K and (100) and (002) at T_s > 573 K. Scanning electron microscopy (SEM) measurements showed that the substrate temperature has a strong effect on morphology of the films. Energy dispersive analysis revealed that ZnO films consisted of the non‐stoichiometric compounds. Optical measurements showed ZnO films to be highly transparent in the visible region, and optical band gap is shifting from 3.18 eV to 3.30 eV. Copyright © 2015 John Wiley & Sons, Ltd.     

Substrate temperature influenced physical properties of silicon MOS devices with TiO2 gate dielectric

DC reactive magnetron sputtering technique was employed for deposition of titanium dioxide (TiO₂) films. The films were formed on Corning glass and p‐Si (100) substrates by sputtering of titanium target in an oxygen partial pressure of 6×10^?2 Pa and at different substrate temperatures in the range 303 – 673 K. The films formed at 303 K were X‐ray amorphous whereas those deposited at substrate temperatures ≥ 473 K were transformed into polycrystalline nature with anatase phase of TiO₂. Fourier transform infrared spectroscopic studies confirmed the presence of characteristic bonding configuration of TiO₂. The surface morphology of the films was significantly influenced by the substrate temperature. MOS capacitor with Al/TiO₂/p‐Si sandwich structure was fabricated and performed current–voltage and capacitance–voltage characteristics. At an applied gate voltage of 1.5 V, the leakage current density of the device decreased from 1.8 × 10^?6 to 5.4 × 10^?8 A/cm² with the increase of substrate temperature from 303 to 673 K. The electrical conduction in the MOS structure was more predominant with Schottky emission and Fowler‐Nordheim conduction. The dielectric constant (at 1 MHz) of the films increased from 6 to 20 with increase of substrate temperature. The optical band gap of the films increased from 3.50 to 3.56 eV and refractive index from 2.20 to 2.37 with the increase of substrate temperature from 303 to 673 K. Copyright © 2012 John Wiley & Sons, Ltd.     

The origin of DC electrical conduction and dielectric relaxation in pristine and doped poly(3‐hexylthiophene) films

We present here the evidence for the origin of dc electrical conduction and dielectric relaxation in pristine and doped poly(3‐hexylthiophene) (P3HT) films. P3HT has been synthesized and purified to obtain pristine P3HT polymer films. P3HT films are chemically doped to make conducting P3HT films with different conductivity level. Temperature (77–350 K) dependent dc conductivity (σ_dc) and dielectric constant (ε′(ω)) measurements on pristine and doped P3HT films have been conducted to evaluate dc and ac electrical conduction parameters. The relaxation frequency (f_R) and static dielectric constant (ε₀) have been estimated from dielectric constant measurements. A correlation between dc electrical conduction and dielectric relaxation data indicates that both dc and ac electrical conductions originate from the same hopping process in this system. © 2010 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 48: 1047–1053, 2010     

Theoretical and experimental analyses of the deposited silver thin films

The silver thin films have been prepared using magnetron DC‐sputtering. We discuss in detail the thin films AFM images and their properties in different sputtering times of 2 to 6 minutes. Despite the low thickness of the films, the roughness saturation amounts, W_s, are well separated. The surface data do not follow the normal Family‐Vicsek scaling, and we have the local growth exponent, β(W_s(t)∼t^β). We obtained the global roughness scaling exponent α=0.36 and growth exponent, β=0.50. We also obtain the fractal spectrum of the data, f(α). The results show that the spectrum is right‐hook like. It distinguishes between different film thicknesses even in small sizes of hundreds of nanometers. Furthermore, we measure the surface conductivities and compare them to the thin film roughnesses. We investigate the roughness and fractality of the AFM data, looking for their relations to width and conductivity of the silver thin film samples.     

Electrical and self‐heating properties of UHMWPE‐EMMA‐NiCF composite films

Conductive polymer composites (CPC) containing nickel‐coated carbon fiber (NiCF) as filler were prepared using ultra‐high molecular weight polyethylene (UHMWPE) or its mixture with ethylene‐methyl methacrylate (EMMA) as matrix by gelation/crystallization from dilute solution. The electrical conductivity, its temperature dependence, and self‐heating properties of the CPC films were investigated as a function of NiCF content and composition of matrix in details. This article reported the first successful result for getting a good positive temperature coefficient (PTC) effect with 9–10 orders of magnitude of PTC intensity for UHMWPE filled with NiCF fillers where the pure UHMWPE was used as matrix. At the same time, it was found that the drastic increase of resistivity occurred in temperature range of 120–200 °C, especially in the range of 180–200 °C, for the specimens with matrix ratio of UHMWPE and EMMA (UHMWPE/EMMA) of 1/0 and 1/1 (NiCF = 10 vol %). The SEM observation revealed to the difference between the surfaces of NiCF heated at 180 and 200 °C. Researches on the self‐heating properties of the composites indicated a very high heat transfer for this kind of CPCs. For the 1/1 composite film with 10 vol % NiCF, surface temperature (T_s) reached 125 °C within 40 s under direct electric field where the supplied voltage was only 2 V corresponding to the supplied power as 0.9 W. When the supplied voltage was enough high to make T_s beyond the melting point of UHMWPE component, the T_s and its stability of CPC films were greatly influenced by the PTC effect. © 2009 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 47: 1253–1266, 2009     

Influence of sputter power on structural and electrical properties of TiO2 films for Al/TiO2/Si gate capacitors

Titanium dioxide (TiO₂) thin films were deposited onto p‐Si substrates held at room temperature by reactive Direct Current (DC) magnetron sputtering at various sputter powers in the range 80–200 W. The as‐deposited TiO₂ films were annealed at a temperature of 1023 K. The post‐annealed films were characterized for crystallographic structure, chemical binding configuration, surface morphology and optical absorption. The electrical and dielectric properties of Al/TiO₂/p‐Si structure were determined from the capacitance–voltage and current–voltage characteristics. X‐ray diffraction studies confirmed that the as‐deposited films were amorphous in nature. After post‐annealing at 1023 K, the films formed at lower powers exhibited anatase phase, where as those deposited at sputter powers > 160 W showed the mixed anatase and rutile phases of TiO₂. The surface morphology of the films varied significantly with the increase of sputter power. The electrical and dielectric properties on the air‐annealed Al/TiO₂/p‐Si structures were studied. The effect of sputter power on the electrical and dielectric characteristics of the structure of Al/TiO₂/p‐Si (metal‐insulator‐semiconductor) was systematically investigated. Copyright © 2014 John Wiley & Sons, Ltd.     

Conductive polymers as a new type of thermoelectric material

Thermoelectric properties were investigated for the films of electrically conductive doped polyanilines. The thermoelectric performance, evaluated by thermoelectric figure-of-merit (ZT = T (S² σ) / κ), of various protonic acid-doped polyaniline bulk films was found to depend on the electrical conductivity σ of the film. Thus, the higher the electrical conductivity, the higher the figure-of-merit is, because the thermal conductivity κ of polyaniline films does not depend on the electrical conductivity. Among the conductive bulk films of polyaniline, the highest figure-of-merit (ZT = 1 × 10⁻⁴) was observed for (±)-10-camphorsulfonic acid (CSA)-doped polyaniline in an emeraldine form (σ - 188 S cm⁻¹) at room temperature. The multilayered film, composed of electrically insulating emeraldine base layers and electrically conducting CSA-doped emeraldine salt layers, exhibited 6 times higher ZT at 300 K than that of a bulk film of CAS-doped polyaniline, showing the highest ZT value of 1.1 × 10⁻² at 423 K. Stretching of the CAS-doped polyaniline film also increased the figure-of-merit of doped polyaniline films along the direction of the stretching.     

Determination of ZnO(0001) surface termination by x‐ray photoelectron spectroscopy at photoemission angles of 0° and 70°

We present an XPS method to determine the termination of the ZnO(0001) surface. By measuring O 1s and Zn 2p_3/2 core‐level x‐ray photoelectron spectra at photoemission angles of 0° and 70° and comparing the intensity ratio (I_O1s/I_Zn2p3)_θ=0/(I_O1s/I_Zn2p3)_θ=70, the Zn and O termination can be distinguished. Calculations show that these two terminations have intensity ratios differing by ～17%. This difference is not affected by a contamination layer provided that the contamination layer thickness is the same for these two differently terminated surfaces. Although this determination method prefers a clean ZnO(0001) surface (in situ measurement), it seems also feasible for surfaces with known contamination layer thickness (ex situ measurement). We have measured ex situ ZnO(0001)‐Zn, ZnO(000&1macr;)‐O single crystals and an epitaxial ZnO film deposited on Al₂O₃(0001). The measured intensity ratios of the first two samples agree with the calculated values for a 0.2 and 0.26 nm contamination layer, respectively. The intensity ratio and the O 1s contamination component intensity of the epitaxial ZnO film are close to those of the ZnO(0001)‐Zn single crystal thus pointing at Zn termination of the film. Copyright © 2004 John Wiley & Sons, Ltd.     

Effects of gold‐induced crystallization process on the structural and electrical properties of germanium thin films

Gold‐induced (Au‐) crystallization of amorphous germanium (α‐Ge) thin films was investigated by depositing Ge on aluminum‐doped zinc oxide and glass substrates through electron beam evaporation at room temperature. The influence of the postannealing temperatures on the structural properties of the Ge thin films was investigated by employing Raman spectra, X‐ray diffraction, and scanning electron microscopy. The Raman and X‐ray diffraction results indicated that the Au‐induced crystallization of the Ge films yielded crystallization at temperature as low as 300°C for 1 hour. The amount of crystallization fraction and the film quality were improved with increasing the postannealing temperatures. The scanning electron microscopy images show that Au clusters are found on the front surface of the Ge films after the films were annealed at 500°C for 1 hour. This suggests that Au atoms move toward the surface of Ge film during annealing. The effects of annealing temperatures on the electrical conductivity of Ge films were investigated through current‐voltage measurements. The room temperature conductivity was estimated as 0.54 and 0.73 Scm⁻¹ for annealed samples grown on aluminum‐doped zinc oxide and glass substrates, respectively. These findings could be very useful to realize inexpensive Ge‐based electronic and photovoltaic applications.     

Substrate temperature influenced ZrO2 films for MOS devices

The effect of substrate temperature on the direct current magnetron-sputtered zirconium oxide (ZrO₂) dielectric films was investigated. Stoichiometric of the ZrO₂ thin films was obtained at an oxygen partial pressure of 4.0 × 10⁻² Pa. X-ray diffraction studies revealed that the crystallite size in the layer was increased from 4.8 to 16.1 nm with increase of substrate temperature from 303 to 673 K. Metal-oxide-semiconductor devices were fabricated on ZrO₂/Si stacks with Al gate electrode. The dielectric properties of ZrO₂ layer and interface quality at ZrO₂/Si were significantly influenced by the substrate temperature. The dielectric constant increased from 15 to 25, and the leakage current density decreased from 0.12 × 10⁻⁷ to 0.64 × 10⁻⁹ A cm⁻² with the increase of substrate temperature from 303 to 673 K.     

50 keV H+ ion beam irradiation of Al doped ZnO thin films: Studies of radiation stability for device applications

Thin films of Al doped ZnO (Al:ZnO) were deposited on two substrates (Si and glass) at room temperature and 300°C using DC magnetron sputtering. These films were bombarded with 50 keV H⁺ beam at several fluences. The pristine and ion beam irradiated films were analysed by X‐ray diffraction, Raman spectroscopy, scanning electron microscopy, and UV‐Vis spectroscopy. The X‐ray diffraction analysis, Hall measurements, Raman and UV‐Vis spectroscopy confirm that the structural and transport properties of Al:ZnO films do not change substantially with beam irradiation at chosen fluences. However, in comparison to film deposited at room temperature, the Al:ZnO thin film deposited at 300°C shows increased transmittance (from 70% to approximately 90%) with ion beam irradiation at highest fluence. The studies of surface morphology by scanning electron microscopy reveal that the ion irradiation yields smoothening of the films, which also increases with ion fluences. The films deposited at elevated temperature are smoother than those deposited at room temperature. In the paper, we discuss the interaction of 50 keV H⁺ ions with Al:ZnO films in terms of radiation stability in devices.     

Porous ZnO/Co3O4/N‐doped carbon nanocages synthesized via pyrolysis of complex metal–organic framework (MOF) hybrids as an advanced lithium‐ion battery anode

Metal oxides have a large storage capacity when employed as anode materials for lithium‐ion batteries (LIBs). However, they often suffer from poor capacity retention due to their low electrical conductivity and huge volume variation during the charge–discharge process. To overcome these limitations, fabrication of metal oxides/carbon hybrids with hollow structures can be expected to further improve their electrochemical properties. Herein, ZnO‐Co₃O₄ nanocomposites embedded in N‐doped carbon (ZnO‐Co₃O₄@N‐C) nanocages with hollow dodecahedral shapes have been prepared successfully by the simple carbonizing and oxidizing of metal–organic frameworks (MOFs). Benefiting from the advantages of the structural features, i.e. the conductive N‐doped carbon coating, the porous structure of the nanocages and the synergistic effects of different components, the as‐prepared ZnO‐Co₃O₄@N‐C not only avoids particle aggregation and nanostructure cracking but also facilitates the transport of ions and electrons. As a result, the resultant ZnO‐Co₃O₄@N‐C shows a discharge capacity of 2373 mAh g^?1 at the first cycle and exhibits a retention capacity of 1305 mAh g^?1 even after 300 cycles at 0.1 A g^?1. In addition, a reversible capacity of 948 mAh g^?1 is obtained at a current density of 2 A g^?1, which delivers an excellent high‐rate cycle ability.     

Effect of end group chemistry on surface molecular motion of monodisperse polystyrene films

The surface molecular motion of monodisperse polystyrene (PS) with various chain end groups was investigated on the basis of temperature‐dependent scanning viscoelasticity microscope (TDSVM). The surface glass transition temperatures, T_g^ss for the proton‐terminated PS (PS‐H) films with number‐average molecular weight, M_n of 4.9k–1,450k measured by TDSVM measurement were smaller than those for the bulk one, with corresponding M_ns, and the T_g^ss for M_n smaller than ca. 50k were lower than room temperature (293 K). In the case of M_n = ca. 50k, the T_g^ss for the α,ω‐diamino‐terminated PS (α,ω‐PS(NH₂)₂) and α,ω‐dicarboxy‐terminated PS (α,ω‐PS(COOH)₂) films were higher than that of the PS‐H film. On the other hand, the T_g^s for the α,ω‐perfluoroalkylsilyl‐terminated PS (α,ω‐PS(SiC₂C^F₆)₂) film with the same M_n was much lower than those for the PS films with all other chain ends. The change of T_g^s for the PS film with various chain end groups can be explained in terms of the depth distribution of chain end groups at the surface region.     

Structure–electrical property study of anisotropic polyaniline films

The relationships of the structure and electrical properties of anisotropic HCl‐doped polyaniline (PANI) films cast from N,N′‐dimethylpropylene urea (DMPU) solutions and stretched to different draw ratios were studied. The anisotropic structure of the stretched PANI films was examined by X‐ray diffraction, near‐infrared wave‐guide coupling, and polarized infrared measurements. The PANI emeraldine base (EB) films cast from DMPU solutions had a single‐phase noncrystalline structure, and stretching of the films did not cause crystallization to occur. The transition moment angles of two weakly absorbing infrared bands were determined, and the Hermans' orientation functions for the PANI EB films were calculated. The PANI films were then doped with HCl, and the electrical properties were determined by impedance spectroscopy. With a specially designed test fixture, the in‐plane and through‐plane impedance was obtained. The conductivity along the stretch direction increased with orientation. The in‐plane conductivity was significantly higher than the through‐plane conductivity. © 2003 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 41: 823–841, 2003     

Growth of cerium tungstate epitaxial layers: influence of temperature

Thin films of cerium tungstate prepared in situ by cerium deposition in oxygen atmosphere onto the W(100) single‐crystal were investigated by means of photoelectron spectroscopy and low‐energy electron diffraction (LEED). The studied temperature range was 173–1073 K. It was found that the temperature necessary for the oriented growth of Ce₆WO₁₂(100) was 673 K, and at higher temperatures, the LEED pattern improved. Photoemission data revealed the partial formation of CeO₂ on the surface at preparation temperatures below 473 K due to limited diffusion of tungsten atoms from the substrate. Copyright © 2015 John Wiley & Sons, Ltd.     

Effect of annealing atmosphere on structural,optical and electrical properties of Al-doped Zn<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Cd<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>O thin films

1 at.% Al-doped Zn_1−x Cd _x O (x = 0–8 at.%) thin films were prepared on glass substrates by sol–gel method. The codoping films retained the hexagonal wurtzite structure of ZnO, and showed preferential c-axis orientation. The effect of annealing ambient (in vacuum and nitrogen) on the optical and electrical properties of (Cd,Al)-codoped ZnO films were investigated using transmission spectra and electrical measurements. The transmittances of the codoping films were obviously degraded by vacuum annealing to 50–60 %, but enhanced to 70–80 % after nitrogen annealing. The carrier concentration and Hall mobility both increased, and resistivity decreased with narrowing band gap of Al-doped Zn_1−x Cd _x O, below different critical concentrations x = 4 % (in vacuum) and x = 6 % (in nitrogen). It is revealed that the conductivity is also improved by Cd doping along with band gap modification. The variations in optical and electrical properties are ascribed to both the changes of the crystallinity and concentration of oxygen vacancies under different ambient. In view of transmittance and conductivity, nitrogen annealing might be a more effective post-annealing way than vacuum annealing for our (Cd,Al)-codoped ZnO films to meet the requirements of transparent conducting oxide (TCO).     

100 keV H+ ion irradiation of as‐deposited Al‐doped ZnO thin films: An interest in tailoring surface morphology for sensor applications

We report the influence of 100 keV H⁺ ion beam irradiation on the surface morphology, crystalline structure, and transport properties of as‐deposited Al‐doped ZnO (Al:ZnO) thin films. The films were deposited on silicon (Si) substrate by using DC sputtering technique. The ion irradiation was carried out at various fluences ranging from 1.0 × 10¹² to 3.0 × 10¹⁴ ions/cm². The virgin and ion‐irradiated films were characterized by X‐ray diffraction, Raman spectroscopy, atomic force microscopy, and Hall probe measurements. Using X‐ray diffraction spectra, 5 points Williamson‐Hall plots were drawn to deduce the crystallite site and strain in Al:ZnO films. The analysis of the measurements shows that the films are almost radiation resistant in the structural deformation under chosen irradiation conditions. With beam irradiation, the transport properties of the films are also preserved (do not vary orders of magnitude). However, the surface roughness and the crystallite size, which are crucial parameters of the ZnO film as a gas sensor, are at variation with the ion fluence. As ion fluence increases, the root‐mean‐square surface roughness oscillates and the surface undergoes for smoothening with irradiation at chosen highest fluence. The crystallite size decreases initially, increases for intermediate fluences, and drops almost to the value of the pristine film at highest fluence. In the paper, these interesting experimental results are discussed in correlations with ion‐matter interactions especially energy losses by the ion beam in the material.     

Synthesis,spectra and conductivity of 1‐D polymers of nickel(I)‐and copper(II )‐porphyrazine with sulfur bridges

The title polymers PNIPzS₄ and PCuPzS₄ were synthesized by reaction of phthalonitrile and 2,3,5,6‐tetracyano‐1,4‐dithiin with corresponding metal salt. Their structures and properties were characterized by associating the experimental results with MO and Cl calculations of the dimer molecule as model polymer in the ZINDO method. It has been found that the PNiPzS₄ (or PCuPzS₄) shows the semiconductivity at T < 253 K (or 260 K) and T > 278 K (or 286 K) and the conductivity increase with a hoist of temperature at 253 K (or 260 K) < T < 278 K (or 286 K). The conductivity σ of the PNiPzS₄ and PCuPzS₄ under pressure 13.73 MPa is 1.56×10^?4 and 9.33×10^?5 S/cm, respectively.     

Influence of Ga dopant on photoelectrochemical characteristic of Ga‐doped ZnO thin films deposited by sol–gel spin‐coating technique

In this study, Ga‐doped ZnO thin films were prepared using sol–gel technique via spin‐coating method. The effect of Ga‐doping dopant (0, 1, 2 and 3 at.%) on microstructural, optical, electrical and photoelectrochemical (PEC) characteristics have been investigated. The spin‐coating was repeated six times, and as‐obtained thin films were then annealed at 500 °C for 1 h in vacuum. After annealing, all samples revealed single phase of hexagonal ZnO polycrystalline structure with a main peak of (002) in X‐ray diffraction (XRD) pattern. Raman spectra show that the vibration strength of E₂ is highly decreased by Ga doping. Thicknesses of all samples were ~300 nm measured via scanning electron microscopy (SEM) cross‐section images and alpha‐step. The optical band gap and resistivity of samples were in the range of 3.24 to 3.28 eV and 102 to 9 Ohm cm, respectively. Resulting from PEC response, the 2 at.% Ga‐doped ZnO thin film has a better PEC performance with photocurrent density of ~0.14 mA/cm² at 0.5 V versus saturated calomel electrode (SCE) under illumination with the intensity of 100 mW/cm². This value was about seven times higher than the un‐doped film (reference sample). Observed higher photocurrent density was likely because of a suitable Ga‐doping concentration causing a lower resistivity. Copyright © 2016 John Wiley & Sons, Ltd.     

Electrical conductivity of poly(vinyl chloride) obtained by photodehydrochlorination from laminated poly(vinyl chloride)/polypyrrole films

Poly(vinyl chloride) (PVC) has been converted to an electrically conductive structure by combined electrochemical and photochemical methods. PVC was cast on a polypyrrole (PPy) film electrode which had been electrochemically prepared. The PVC layer in the laminated PVC/PPy films was first dehydrochlorinated under the illumination of UV light, and the generated polyenes were subsequently doped with I₂ and FeCl₃. The maximum electrical conductivity achieved for such PVC film was 2.51 X 10^?2 and 8.63 10^?2 S cm^?1 after I₂ and FeCl₃ doping, respectively. The temperature dependence of the electrical conductivity showed different behavior in higher and lower temperature ranges. In the former (T > 243 K), the T^?1 law held, and the activation energy and bandgap were estimated as 0.25 and 0.49 eV, respectively. In the latter (T < 243 K), the conductivity mechanism followed the variable range hopping model (T^?1/4 law) in which the radius of the localized state wave function and the density of the localized states at the Fermi level were 1.25 × 10³ Å and 1.03 X 10¹⁵ eV^?1 cm^?3, respectively. © 1995 John Wiley & Sons, Inc.