Effect of an applied magnetic field on the performance of a sis receiver near 300 GHz

We have successfully constructed and tested a superconductor-insulator-superconductor (SIS) receiver for operation at 265–280 GHz using 1 m² area Nb–AlO _x –Nb tunnel junctions fabricated at Stony Brook. The best performance to date is a double sideband (DSB) receiver noise temperature of 129 K at 278 GHz. We find that suppression of the Josephson pair currents with a magnetic field is essential for good performance and a stable DC bias point. Fields as high as 280 gauss have been used with no degradation of mixing performance. We illustrate the improvement in the intermediate frequency (IF) output stability with progressively increasing magnetic fields.     

AlxGa1-xN/GaN双量子阱的结构和掺杂浓度对子带间跃迁波长和吸收系数的影响

用薛定谔方程和泊松方程自洽计算的方法研究了Al_0.75Ga_0.25N/GaN对称双量子阱(DQWs)中子带间跃迁(ISBT)的波长和吸收系数对中间耦合势垒高度、中间耦合势垒宽度、势阱宽度和势垒掺杂浓度的依赖关系.研究发现,第一奇序子带S_1ood与第二偶序子带S_2even ISBT波长随着中间耦合势垒高度的降低而变短.当中间耦合势垒高度高于0.62 eV时,S_{1odd< 关键词： 自洽 x}Ga_1-xN/GaN双量子阱')" href="#">Al_xGa_1-xN/GaN双量子阱 子带间跃迁     

The next-to-leading order (NLO) gluon distribution from DGLAP equation and the logarithmic derivatives of the proton structure functionF 2(x, Q 2) at lowx

At lowx, an analytic solution of the DGLAP equation for gluon in the next-to-leading order (NLO) is obtained by applying the method of characteristics. Its compatibility with double leading logarithmic approximation (DLLA) asymptotics is discussed and comparison with the exact ones like GRV98NLO is made. The solution is then utilized to calculate the derivatives∂F ₂ (x,Q ²)/∂ lnQ ² and ∂ lnF ₂(x,Q ²)/∂ ln (1/x) and compared with the recent HERA data. Our solution is found to reproduce most of the essential features of the data on the derivatives.     

First-principles study of fundamental properties and electronic structure of alloys

We have performed first-principles calculations using full-potential augmented-plane-wave method to investigate the fundamental properties of the Cd_1–xZn_xTe alloys. The composition dependence of the lattice constant and the bulk modulus have been estimated from total energy calculations. By means of the analytical fitting the band structures in the vicinity of the Brillouin center a complete set of effective electron- and hole-masses have also been derived. In order to further understand the effects of the chemical bonding on the above macroscopic properties we then studied the relaxation behaviors and the changes of the electronic states upon alloying for x=0.25 system. The results presented here yield a general understanding of the fundamental properties for the Cd_1–xZn_xTe crystals studies.