一种新型皮秒同步扫描变像管

本文描述了一种新型皮秒同步扫描变像管的设计特点及实验结果。其静态空间分辨率为50lp/mm,时间分辨率为1.1ps。     

变质量系统相对论力学速度空间中的变分原理

本文给出变质量系统相对论力学速度空间中的变分原理，由此得到变质量系统相对论力学的Ｌａｇｒａｎｇｅ方程。     

冷却透平变工况性能预测

冷却透平变工况性能预测葛满初，齐宗敏，徐进（中国科学院工程热物理研究所北京１０００８０）黄忠湖，胡松岩（航空航天部六零六所沈阳１１００１５）关键词变几何透平，冷却气流，变工况１基本理论基本控制方程相对运动坐标系下基本数学模型为：连续方程力学方程能量方...     

气垫导轨拓展实验

在气垫导轨上研究了变质量物体在变力作用下的运动规律.利用在滑块上放置载水装置实现质量的减少,通过质量均匀的刚性绳改变作用在滑块上的力,有固定在导轨上的4个光电门获得滑块的位移及速度.本实验结果与理论推导符合较好.     

三维变角反射计

本文介绍了三维变角反射计的结构.检验了球形照明球的亮度均匀性、测量系统的线性性、单色仪的波长准确度和杂散辐射等参数.测定了漫射陶瓷板和海伦(Halon)粉末压制板的反射亮度分布曲线.讨论了变角反射计在色度学和光谱光度学中的重要应用.     

变焦距电视摄像镜头光学系统设计方法

本文着重阐述如何用分析对比方法确定变焦距光学系统的最佳方案,讨论了摄远型后固定组缩短长度的有关问题;简要介绍了变焦距电视摄像镜头光学系统像差平衡方案及主要像差结果。     

加强习题变式教学 提高学生思维品质

习题变式教学通过启迪、引导学生自觉地运用物理的基础知识和基本规律,拓展学生的"学习空间"和"变异维数",从而实现培养和提高学生的思维品质.     

变质量物体的相对论四维协变方程

将经典质量的变化和质量随速度而变化这一相对论效应同时考虑,建立变质量物体的相对论四维协变方程,阐述方程的物理意义,并由该方程推出Ackeret公式． 关键词：     

软X射线皮秒变象管扫描相机

软X射线皮秒变象管扫描相机技术是一种用变象管扫描相机测量X射线脉冲而能达到皮秒时间分辨率和一维微米级空间分辨率的技术。X射线扫描相机是研究伴有X射线辐射的一切高速瞬变过程的极为重要的测量工具。例如在激光核聚变的研究中,加热压缩期间靶球发生内爆过程中高温高密度等离子体的光谱辐射主要为软X射线,对这些软X射线的研究,可以获得有关等离子体的电子温度、电子能量分布、各种不稳定性的形态及这些参量随时间变化的资料。     

静电场作用下双势阱分子隧道效应的猝灭及能级裂距的非线性特性研究

讨论了在静电场作用下，双势阱分子中波函数随外加静电场定域的动态过程，以及能级裂距与外加静电场的关系.证明了静电场作用后，能级裂距既受隧道效应的影响，又受外加静电场的影响.所加静电场较小时与外场强度呈非线性关系，当外加静电场较大时，Stark效应对能级裂距的影响占了主导地位，使能级裂距随外加静电场线性地增大. 关键词： 双势阱 静电场 隧道效应 能级裂距     

Tilted electric field effects on the electronic states in a GaAs quantum disk

In the present work we report the effects of a geometrical confinement and tilted applied electric field on the electronic energy levels in a semiconducting quantum disk. Calculations are performed in the effective mass approximation and using a variational method. The results can be summarized as follows: (1) due to the infinite confinement along the all directions of the heterostructure, the variational calculation with two parameters for tilted applied electric field can be treated with two independent each other variational parameters; (2) the magnitude of the energy shift is an increasing function of the applied electric field; (3) the effects of the applied electric field are magnified as the dimensions of the heterostructure (height and radius) grow; and finally (4) for large enough applied electric field the energy shift is a linear function of the applied electric field.     

n型硅微尖场发射电子能谱的模拟计算

结合金属的场发射电子能谱,模拟计算了场渗透对n型半导体硅微尖的场发射能谱的影响,并与n型硅微尖的场发射能谱实验结果进行了比较,讨论了模拟计算误差的来源。计算结果表明电场渗透现象导致硅的场发射能谱向低能方向偏移,表面电场越高,能谱的偏移量越大,其偏移程度可超过1eV。导致硅微尖的场发射能谱偏移的主要因素是半导体的场渗透现象。     

外电场对InGaAsP/InP量子阱内激子结合能的影响

在有效质量近似下采用变分法计算了InGaAsP/InP量子阱内不同In组分下的激子结合能,分析了结合能随阱宽和In组分的变化情况,并且讨论了外加电场对激子结合能的影响. 结果表明：激子结合能是阱宽的一个非单调函数,随阱宽的变化呈现先增加后减小的趋势;随着In组分增大,激子结合能达到最大值的阱宽相应变小,这与材料的带隙改变有关;在一定范围内电场的存在对激子结合能的影响很小,但电场强度较大时会破坏激子效应. 关键词： 激子 InGaAsP/InP量子阱 结合能 电场     

Hydrostatic pressure and electric and magnetic field effects on the binding energy of a hydrogenic donor impurity in InAs Pöschl-Teller quantum ring

We consider the effects of electric and magnetic fields as well as of hydrostatic pressure on the donor binding energy in InAs Pöschl-Teller quantum rings. The ground state energy and the electron wave function are calculated within the effective mass and parabolic band approximations, using the variational method. The binding energy dependencies on the electric field strength and the hydrostatic pressure are reported for different values of quantum ring size and shape, the parameters of the Pöschl-Teller confining potential, and the magnetic field induction. The results show that the binding energy is an increasing or decreasing function of the electric field, depending on the chosen parameters of the confining potential. Also, we have observed that the binding energy is an increasing/decreasing function of hydrostatic pressure/magnetic field induction. Likewise, the impurity binding energy behaves as an increasing/decreasing function of the inner/outer radii of the quantum ring nanostructure.     

Anisotropic exciton Stark shift in hemispherical quantum dots

The exciton Stark shift and polarization in hemispherical quantum dots(HQDs) each as a function of strength and orientation of applied electric field are theoretically investigated by an exact diagonalization method. A highly anisotropic Stark redshift of exciton energy is found. As the electric field is rotated from Voigt to Faraday geometry, the redshift of exciton energy monotonically decreases. This is because the asymmetric geometric shape of the hemispherical quantum dot restrains the displacement of the wave function to the higher orbital state in response to electric field along Faraday geometry. A redshift of hole energy is found all the time while a transition of electron energy from this redshift to a blueshift is found as the field is rotated from Voigt to Faraday geometry. Taking advantage of the diminishing of Stark effect along Faraday geometry, the hemispherical shapes can be used to improve significantly the radiative recombination efficiency of the polar optoelectronic devices if the strong internal polarized electric field is along Faraday geometry.     

Effects of an electric field on the confined hydrogen atom in a parabolic potential well

Using the perturbation method, the confined hydrogen atom by a parabolic potential well is investigated. The binding energy of the confined hydrogen atom in a parabolic potential well is calculated as a function of the confined potential radius and as a function of the intensity of an applied electric field. It is shown that the binding energy of the confined hydrogen atom is highly dependent on the confined potential radius and the intensity of an applied electric field.     

Electric field induced exciton binding energy and its non-linear optical properties in a narrow InSb/InGaxSb1−x quantum dot

The effect of electric field on the binding energy, interband emission energy and the non-linear optical properties of exciton as a function of dot radius in an InSb/InGa_xSb_1?x quantum dot are investigated. Numerical calculations are carried out using single band effective mass approximation variationally to compute the exciton binding energy and optical properties are obtained using the compact density matrix approach. The dependence of the nonlinear optical processes on the dot sizes is investigated for various electric field strength. The linear, third order non-linear optical absorption coefficients, susceptibility values and the refractive index changes of electric field induced exciton as a function of photon energy are obtained. It is found that electric field and the geometrical confinement have great influence on the optical properties of dots.     

Intense laser effects on donor impurity in a cylindrical single and vertically coupled quantum dots under combined effects of hydrostatic pressure and applied electric field

Using the effective mass and parabolic band approximations and a variational procedure we have calculated the combined effects of intense laser radiation, hydrostatic pressure, and applied electric field on shallow-donor impurity confined in cylindrical-shaped single and double GaAs-Ga_1−xAl_xAs QD. Several impurity positions and inputs of the heterostructure dimensions, hydrostatic pressure, and applied electric field have been considered. The laser effects have been introduced by a perturbative scheme in which the Coulomb and the barrier potentials are modified to obtain dressed potentials. Our findings suggest that (1) for on-center impurities in single QD the binding energy is a decreasing function of the dressing parameter and for small dot dimensions of the structures (lengths and radius) the binding energy is more sensitive to the dressing parameter, (2) the binding energy is an increasing/decreasing function of the hydrostatic pressure/applied electric field, (3) the effects of the intense laser field and applied electric field on the binding energy are dominant over the hydrostatic pressure effects, (4) in vertically coupled QD the binding energy for donor impurity located in the barrier region is smaller than for impurities in the well regions and can be strongly modified by the laser radiation, and finally (5) in asymmetrical double QD heterostructures the binding energy as a function of the impurity positions follows a similar behavior to the observed for the amplitude of probability of the noncorrelated electron wave function.     

SUPPRESSION OF BALLISTIC ELECTRON TRANSMISSION THROUGH A SEMICONDUCTOR Π-STRUCTURE BY AN EXTERNAL TRANSVERSE ELECTRIC FIELD

We have conducted numerical studies of ballistic electron transport in a semicon-ductor II-structure when an external transverse electric field is applied. The device conductance as a function of electron energy and the strength of the transverse electric field is calculated on the basis of tight-binding Green's function formalism. The calculations show that a relatively weak electric field can induce very large decrease in the electron transmission across the structure. When the transverse electric field is sufficiently strong, electrons can hardly be transported through the device. Thus the performance of the device can be greatly improved for it is much easier to control electron transport through the device with an external transverse electric field.