Dynamic critical behavior in models of ferromagnetic gadolinium

A numerical technique combining Monte Carlo and molecular dynamics simulations is used for the first time to examine the complex critical dynamics of models of ferromagnetic gadolinium in which both strong exchange interactions and relativistic effects of several different types are taken into account. A finite-size scaling technique is used to calculate the corresponding dynamic critical exponents. The role played by isotropic dipole-dipole interaction in the critical behavior of gadolinium is evaluated. The results obtained provide an explanation for the anomalous dynamic critical behavior of gadolinium.     

The critical thermal expansion of gadolinium

Measurements have been made of the critical thermal expansion of single crystals of gadolinium, prepared by solid state electrotransport processing. Although the expansion data can be fitted to a simple power law with exponents λ⁺=?0.25, γ^?=?0.33, these values are not predicted by theory and a discontinuity remains at T_c=293.620K. It is suggested that the results relate to a region of crossover to uniaxial dipolar behaviour.     

Magnetic properties of silicon doped with gadolinium

The magnetic semiconductor Gd_xSi_1-x was prepared by low-energy dual ion-beam epitaxy. Gd_xSi_1-x shows excellent magnetic properties at room temperature. A high magnetic moment of 10 _B per Gd atom is observed. The high atomic magnetic moment is interpreted as being a result of the RKKY mechanism. The indirect exchange interaction between ions is strong at large distances due to the low state density of the carriers in the magnetic semiconductor. PACS 81.05.Zx; 81.15.Hi; 75.50.Pp; 75.70.-i; 61.72.Tt     

Electrical transport properties of gadolinium scandium gallium garnet

Electrical conductivity and thermoelectric power are measured on a single crystal of Gd_3.0Sc_1.8Ga_3.2O₁₂ (GSGG) between 1273 and 1673 K. The measurements are made both in air and in controlled atmospheres, and P_O2 varies from 10^?1.68 to 10^?5.6 MPa. The data indicate GSGG may well be a mixed conductor in this temperature and P_O2 range, with n-type electronic conductivity and ionic transport on the oxygen sublattice. Changes in temperature induce long-lived disequilibrium in electrical conductivity of GSGG (over 30 h at T < 1373 K) that can be explained by temperature dependent cation redistribution. The effective activation energy for equilibrium electrical conductivity is E_a = 2.40 ± 0.05 eV, as opposed to values of E_a between 1.8 and 2.2 eV during actual temperature changes. An additional contribution in the equilibrium E_a, due to thermally activated cation redistribution, can account for the higher value seen.     

Self-organized critical models of earthquakes

In this paper we briefly review few self-organized critical (SOC) models of the phenomenon of earthquakes. For example, the two-dimensional non-conservative SOC model of Olami, Feder and Christensen (OFC) has been described. It is known that the effect of the fixed boundary on this model is very strong. It has been recently observed that imposition of a moving boundary condition helps to remove the strong non-uniformity originated from the fixed boundary. A generalized spatio-temporal scaling for the recurrence time distribution was proposed by Bak et al. which was later confirmed by Corral. We studied the same scalings on the conservative OFC model with moving boundary condition.     

Dielectric and optical properties of gadolinium doped bismuth ferrite

Polycrystalline samples of a Gd _x Bi_1?x FeO₃ system are prepared by a conventional ceramic technology. Temperature and frequency dependences of a component of permittivity in the range of radio- and ultra-high frequencies are investigated. Features of the behavior of the reflectance spectra and spectra of the components of the dielectric and optical functions in the region of lattice and electronic resonances are investigated.     

Structural and optical properties of sputtered gadolinium nitride films

Rare-earth (RE) materials have high magnetic moments and form a wide range of magnetic structures. There has been speculation in the literature that rare-earth nitrides may form half-metallic ferromagnetics. This is surprising because, based on a simple ionic model, trivalent rare-earth nitrides would be expected to be insulators with a similar electronic structure to the divalent rare-earth chalcogenides. However if it is the case that they are half-metallic or narrow gap insulators, then they have potential applications in spin-filtering devices. In the present investigation, We have deposited GdN films on glass substrate at room temperature by Ar/N₂ mixed gas plasma-radio frequency (rf) sputtering method. The structure and the complex optical properties as well as the energy gap of GdN thin films as a function of N₂ partial pressure are determined.     

Electrical properties and proton conduction of gadolinium doped ceria

The electrical properties and proton conduction of Gd_0.1Ce_0.9O_1.95 (10GCO) were investigated via impedance spectroscopy in different atmospheres and various gas concentration cells. In oxygen atmosphere, GCO is nearly a pure oxygen ionic conductor, while in hydrogen GCO behaves as a mixed conductor of oxygen ions, electrons and protons. Depending on the temperature, the total conductivity is usually enhanced by one to two orders of magnitude in hydrogen than in air/oxygen due to mixed conduction. By examining ionic transport properties of oxygen ions and protons using gas concentration cells we have discovered that the ionic transport properties depend largely on the gas atmospheres and change from one type to the other. Proton conduction generally exists in GCOs, and becomes significant in hydrogen atmospheres, which normally results in a contribution between 5 to 10 % of the total conductivity for 10 GCO. A maximum value of 17 % of the contribution by protons has been observed. The reduction of Ce⁴⁺ to Ce³⁺ of the sample in reduced atmospheres causes the formation of additional oxygen vacancies and electrons, associated also with the creation of protons. All these charge carriers are responsible for the electrical and transport properties of the investigated GCO materials. Paper presented at the 5th Euroconference on Solid State Ionics, Benalmádena, Spain, Sept. 13–20, 1998.     

Magnetic properties of some gadolinium—Cobalt intermetallic compounds

Crystallographic and magnetic properties of the single crystals having the compositions of GdCo₃, Gd₂Co₇, GdCo₅, Gd_2.2Co_16.6 and Gd₂Co₁₇ were studied in order to contribute to the investigation of the magnetic anisotropy in the Gd–Co system. The single crystal used were prepared by means of the Bridgman method using BN-coated alumina crucibles.The room-temperature magnetocrystalline anisotropy constants K₁ of GdCo₃, Gd₂Co₇, GdCo₅, Gd_2.2Co_16.6 and Gd₂Co₁₇ are determined as 8.1 × 10⁶, 1.3 × 10⁷, 4.1 × 10⁷, 3.0 × 10⁶ and -2.7 × 10⁶ erg/cm³, respectively. it is also found that the magnetocrystalline anisotropy of Gd–Co phases in the stable region of the Th₂Zn₁₇-type structure changes very sensitively from negative to positive as the ratio Gd/Co increases above the stoichiometric ratio of 2/17.     

Scaling limit of some critical models

In this paper we consider massless systems which are strong perturbations of the massless lattice free field. Under quite general assumptions on the potential, we prove that the continuum (scaling) limit of these systems is Gaussian.     

Dielectric properties of titanium and gadolinium doped MgO single crystals

The dielectric properties of titanium doped magnesium oxide (Ti/MgO) and gadolinium doped magnesium oxide (Gd/MgO) single crystals have been measured at room temperature over the frequency range 500 Hz to 50 kHz. For both the crystals, the dielectric constant is found to be independent of frequency and the ac conductivity Re{_ae} agrees well with the relation Re{_ae} ⁿ , being the angular frequency with n=0.84±0.05 for Ti/MgO andn=0.81±0.03 for Gd/MgO. The data fits well with the relation ^n–1(n<1), being the dielectric loss factor. An explanation may be found on the basis of the hopping phenomenon.     

Solvothermal synthesis and luminescence properties of Tb-doped gadolinium aluminum garnet

Different concentrations of Tb³⁺ ion-doped gadolinium aluminum garnet (GAG) nanophosphors have been synthesized by solvothermal reaction method and sintered at 1300 °C. The XRD patterns confirm that the GAG phosphors sintered at 1300 °C have a garnet structure with single cubic phase. The calculated crystallite size is about 92 nm. The SEM images of the phosphors show the spherical morphology agglomerated with many small particles. The luminescence properties of these phosphors have been carried out by the emission and excitation spectra along with lifetime measurements. The excitation spectra of GAG:Tb³⁺ phosphors consist of three broad bands due to the 4f⁸→4f⁷5d¹ transition and some sharp peaks due to the 4f⁸→4f⁸ transition. The emission spectra of the phosphors reveal two colors, such as blue due to ⁵D₃→⁷F_J transitions and green due to the ⁵D₄→⁷F_J transitions. The dynamics of the phosphors have been investigated by decay curves and the cross-relaxation process and is observed at 0.5 mol% Tb³⁺ concentration.     

Optical properties of Dy ions in sodium gadolinium tungstates crystal

Dy³⁺-doped NaGd(WO₄)₂ crystal with sizes of about Φ20×40 mm² was grown by the Czochralski technique along the (0 0 1) orientation. Polarized absorption spectra, fluorescence spectra, and fluorescence decay curve of Dy³⁺-doped NaGd(WO₄)₂ have been recorded at room temperature. Based on the Judd-Ofelt (J-O) theory, the intensity parameters from the measured line strengths were evaluated. The J-O parameters were used to predict radiative transition probabilities, radiative lifetimes and branching ratios for various excited levels of Dy³⁺-doped NaGd(WO₄)₂ crystal. The luminescent quantum efficiency of the ⁴F_9/2 level was determined to be approximately 63% for this material. The emission cross-section of the ⁴F_9/2→⁶H_13/2 transition was estimated by using the Füchtbauer-Ladengurg method.     

Si被注入Gd后的磁性及其整流特性的研究

采用离子束技术，在n型硅基片中注入稀土元素钆，制备了磁性-非磁性p-n结.磁性层Gd_xSi_1-x表现出优良的磁学性能，高居里温度，高原子磁矩(利用RKKY模 型 可以得到解释)，低矫顽力，并保持着半导体的属性，磁性-非磁性p-n结具有整流特性，但 没有观察到明显的磁电阻效应. 关键词： 磁性半导体 磁性p-n结 钆的硅化物 离子束外延