Gd2O2S:Eu荧光谱及能级的高压研究

 在21 500~11 500 cm^-1光谱区间内测量了Gd₂O₂S:Eu的荧光光谱，测量是在室温和液氮条件下进行的，对122条低温谱线和96条常温谱线进行了指认。识别了Eu³⁺离子⁵D_0~2及⁷F_0~6的39个斯塔克能级中的35个能级。在0~15 GPa压力范围内，研究了Gd₂O₂S:Eu高压下的发射光谱。在压力作用下，发现所有观测到的谱线都红移，强度降低。6个⁵D_0~2能级下降速度大于⁷F_J，⁵D₂、⁷F_2~5多重态的斯塔克劈裂变大，而⁵D₁和⁷F₁的劈裂变小。     

压力对GdoBr:Eu晶场参数的影响

 在室温下测量了GdoBr:Eu的常压和高压荧光谱，光谱范围在13 000~21 500 cm^-1之间，压力至12 GPa。由光谱数据得到了Eu³⁺晶场能级随压力的变化曲线。⁷F_0～5能级随压力的变化规律比较复杂，而⁵D_0~2各能均随压力的升高几乎线性地降低。在基态谱项⁷F的49个状态上进行了晶场拟合计算，所得常压下的5个非零晶场参数分别为：B₀²＝-1 124.0 cm^-1，B₀⁴＝-969.6 cm^-1，B₄⁴＝827.9 cm^-1，B₀⁶＝889.6 cm^-1，B₄⁶＝377.0 cm^-1。高压下的计算结果表明，B₀⁴、B₀⁶这两个晶场参数随压力的增加而增大，B₄⁶随压力的增加而减小，而B₀²、B₄⁴随压力的变化有些起伏。晶场强度在8 GPa以下随压力增加而减小，其后开始变强。     

高组份Al值的AlxGa1-x As和AlxGa1-x As/GaAs/AlxGa1-xAs/GaAs多层结构的MOCVD生长

用自制常压MOCVD系统,在半绝缘GaAs衬底上生长高Al组份Al_xGa_1-xAs（其x值达0.83）,和Al_xGa_1-xAs/GaAs/Al_xGa_1-xAs/GaAs多层结构,表面镜面光亮。生长层厚度从几十到十几μm可控,测试表明外延层晶格结构完整,x值调节范围宽,非有意掺杂低,高纯GaAs外延层载流子浓度n_300K=1.7×10¹⁵cm^-3,n_77K=1.4×10¹⁵cm^-3,迁移率μ_300K=5900cmcm²/V.S,μ_77K=55500cm²/V.S。用电子探针,俄歇能谱仪测不出非有意掺杂的杂质,各层间界面清晰平直。 对GaAs,AlGaAs生长层表面缺陷,衬底偏角生长温度及其它生长条件也进行了初步探讨。     

凝聚炸药中超压爆轰的实验研究

 采用飞片碰撞技术，在TNT/RDX（40/60）炸药中获得了2.5倍于正常爆轰的最大超压值，得到了超压爆轰下爆轰产物物态方程p=Aρ^{k+A₁(p-p_J)}（p－爆压，单位GPa，ρ－密度，单位kg/m³，A=ρ_J/ρ^k_J，p_J=27.06 GPa，ρ_J=2.3×10³ kg/m³，k=2.77，A₁=2.7×10^-3 GPa^-1，下表J代表正常爆轰状态）。该方程还可以较好地描述超压爆轰产物的二次冲击状态。     

LaOBr:Tb3+，Dy3+的发光特性及高压研究

 采用高温常压方法合成了稀土发光材料LaOBr:Tb³⁺，Dy³⁺，采用高温高压方法对材料进行了处理，研究了高温高压处理前后样品发光特性的变化，并进行了发光衰减测量。结果表明，Dy³⁺的掺杂可以将Tb³⁺的⁵D₃能级的激发能有效地驰豫到⁵D₄能级，从而使⁵D₄~⁷F_J（J＝0, 1,…,6）的发射，尤其是⁵D₄~⁷F₅的发射明显增强，使得样品的发光亮度大大提高。Dy³⁺，Tb³⁺间存在交叉驰豫共振能量传递。高压处理过程引入的杂质、材料氧化及压致晶场变化都对材料的发光特性产生影响。     

硅酸锶掺Er3+的高压合成及发光特性

 首次采用高压高温方法合成了Sr₂SiO₄:Er³⁺Bi³⁺和SrSiO₃:Er³⁺Bi³⁺发光材料，研究了合成压力、合成温度对发光特性的影响。与常压合成产物相比较，发光谱发生了红移；谱线半宽度显著增大；发光强度和量子发光效率下降。X射线衍射分析得出，SrSiO₃:Er³⁺Bi³⁺发生了结构相变，Sr₂SiO₄:Er³⁺Bi³⁺结构未变但晶格参数发生了变化，且主衍射峰强度发生了反转。分析表明，发光特性的变化是压致晶场、库仑及自旋-轨道相互作用的变化引起的。     

高压合成的硼酸锶掺Eu2+离子发光特性的研究

 本文首次采用高压方法合成了Sr₃B₂O₆:Eu²⁺、Sr₂B₂O₅:Eu²⁺、SrB₄O₇:Eu²⁺一系列硼酸盐，研究了它们和SrB₂O₄:Eu²⁺的常压与高压合成产物的发光光谱、强度及效率的变化，以及发光与其结构的关系。由于硼酸盐在高压处理后，结构发生变化，因而光谱及发光强度均有所改变。尤其对SrB₂O₄:Eu²⁺，在适当的合成压力条件及一定的激光条件下，其量子发光效率比常压提高80倍以上。     

对爱因斯坦模型的修正及考虑热效应的三个通用状态方程

 对固体考虑热效应的爱因斯坦模型进行了修正。指出考虑热效应的通用状态方程中不应该包含零点振动项，方程参数不应该直接取为参考温度下的实验值V_R，B_R，B′_R和γ^G_R，而应该取为零温下的数值V₀，B₀，B′₀和γ^G₀；提出了一种从V_R，B_R，B′_R和γ^G_R求解V₀，B₀，B′₀和γ^G₀的方法。将提出的方法应用于三个典型的通用状态方程，包括Baonza、mMNH和Vinet方程。数值结果表明，利用相同的实验参数对三个方程解出的参数，以及预测的零压和低压下的热物理性质差异很小，而且都与实验数据符合很好。这些结果表明，在零压和低压下预测热物理性质的精确度不足以用来判断各种通用状态方程的适用性。     

Semileptonic decays Bc→(ηc,J/Ψ)lv in the perturbative QCD approach

In this paper we study the semileptonic decays of B_c^-→(η_c,J/Ψ)l^-v_l. We first evaluate the B_c→(η_c,J/Ψ) transition form factors F₀(q²), F₊(q²), V(q²) and A_0,1,2(q²) by employing the pQCD factorization approach, and then we calculate the branching ratios for all considered semileptonic decays. Based on the numerical results and the phenomenological analysis, we find that: (a) the pQCD predictions for the values of the B_c→η_c and B_c→J/Ψ transition form factors agree well with those obtained by using other methods; (b) the pQCD predictions for the branching ratios of the considered decays are Br(B_c^-→η_c e^-v_e(μ^-v_μ)=(4.41_-1.09^+1.22)×10^-3, Br(B_c^-→η_cτ^-v_τ) =(1.37_-0.34^+0.37)×10^-3, Br(B_c^-→J/Ψ e^-v_e(μ^-v_μ)) =(10.03_-1.18^+1.33)×10^-3, and Br(B_c^-→J/Ψτ^-v_τ) =(2.92_-0.34^+0.40)×10^-3; and (c) we also define and calculate two ratios of the branching ratios R_ηc and R_J/Ψ, which will be tested by LHCb and the forthcoming Super-B experiments.     

高压对以沸石分子筛基质的Eu（Ⅲ）稀土发光材料荧光光谱影响的研究

 本文研究了高压下无机微孔材料的相转变，并讨论了压力对离子交换的Eu（Ⅲ）NaA和Eu（Ⅲ）NaY两种以沸石分子筛为基质的稀土发光材料发光性质的影响。实验结果表明，对于不同基质材料，压力对Eu（Ⅲ）离子的光谱结构的影响，尤其是对⁵D₀→⁷F₁磁偶极跃迁与⁵D₀→⁷F₂电偶极跃迁强度比（I_m/I_e）的影响十分显著。对于Eu（Ⅲ）NaA样品来说，I_m/I_e值随压力的增加而增加，而对于Eu（Ⅲ）NaY样品，I_m/I_e值随压力的增加而减少。     

高压下Gd3Ga5O12晶体的弹性性能

 利用超声“脉冲回波重合法”技术,测定了立方晶体镱镓石榴石（GGG）各对称方向的超声波声速,及它们在流体静压力和单轴应力条件下,随压力的变化,计算了GGG的二阶和三阶弹性常数。它们分别是：c₁₁=3.04,c₁₂=1.31,c₄₄=0.94和c₁₁₁=-17.97,c₁₁₂=-12.86,c₁₂₃=-1.06,c₁₄₄=-2.11,c₁₆₆=-3.29,c₄₅₆=-0.94,单位是10¹¹ N/m²。根据这些数据,我们还计算了GGG晶体的德拜温度以及沿它的[001]→[111]→[110]→[100]传播的三个声学波分支（一个纵波,两个横波）的Gruneisen参数γ(p,N)的分布。     

Si{111}晶面粒子堵塞坑的新现象

本文报道了从粒子背散射堵塞效应的实验中所发现的单晶Si的{111}晶面粒子堵塞坑的新现象。单晶Si的{111}晶面有两个面间距d_{(111)^(a)和d(111)^(b),而{110}晶面只有一个面间距d(110)。由此导致两者的堵塞坑是不同的,我们已从α粒子和质子的Si单晶堵塞效应的实验得到了证实。并由此估计了d(111)^(a)和d(111)^(b)以及d(110)的2ψ1/2角。据作者了解,到目前为止,国内外还没有人发现此现象。此现象的发现对复杂晶体的堵塞和沟道效应的研究开阔了前景。 关键词：}     

The topography of nickel crystals during the reaction towards Ni(CO)4; A field ion microscope study

The structural aspect of the formation of Ni(CO)₄ by the reaction of CO with solid nickel has been studied. The nickel initial state was a nearly hemispherical single crystal as prepared by field evaporation of a nickel field emitter tip. Field-free reaction of CO with the clean nickel surface took place at pressures up to 2 mbar, reaction times up to 45 h, and at a temperature of 373 K, which as a result from work by others was found optimum for highest rates of Ni(CO)₄ formation. Neon field ion imaging at 80 K after reaction with CO showed the crystal always in an intermediate state, which had the features: (1) Areas of {;111} were increased; (2) at half angles between a central (111) and peripherical {111} planes there were {110} planes flanked by {210}, and {100} flanked by {511}, respectively; (3) with the exception of the planes mentioned in feature (2), the remaining surface area was more than mono-atomically stepped. From these results and in accordance with the theory of crystal growth (Kossel, Stranski) and the theory of crystal dissolution (Lacmann, Franke, Heimann) a pure octahedron is expected to be the final state of the crystal. This implies that nickel atoms removed by the reaction are most frequently taken from 〈110〉 atom chains of the {111} planes.     

水绿矾的状态方程和高压熔化

 用阻抗匹配法和压电探针技术测量了初始密度为1.714 g/cm³（孔隙率α=ρ₀/ρ₀₀=1.898/1.714=1.107）的水绿矾（FeSO₄·7H₂O）的冲击压缩线,发现其在0～100 GPa范围内存在两个明显相区：含有部分熔融的低压相和完全熔化的高压相。在两个相区内,冲击波速度D和波后粒子速度u可分别描述为：D=0.59+2.06u（u<3.12 km/s）和D=3.18+1.223u（u≥3.12 km/s）。从冲击压缩数据出发,用欧拉有限应变理论得到了其等熵状态方程。其熔化方程可用p_m(GPa) =0.159(T_m(K)/1000)^6.3371+0.69来近似描述。     

氧化镍（绿镍矿）等温压缩及高压相变研究

 本文采用DAC（金刚石压砧高压腔）装置，对氧化镍进行了静水压、非静水压、电导率测量等系统高压实验，获取了氧化镍等温压缩、高压相变及电导率压力效应的新结果，并在实验数据的基础上，对其高压相变与电性及磁性变化关系及体弹性模量作了分析讨论。     

Crystallographic anisotropy in chemisorption: Nitrogen on tungsten single crystal planes

A molecular beam technique for the determination of sticking probabilities and surface coverages was used in earlier work to investigate the adsorption of nitrogen on tungsten {110}, {111} and {100} single crystal planes. In the present paper these studies have been extended to the {310}, {320} and {411} planes. Absolute sticking probabilities and adatom surface coverages are reported for crystal temperatures between 90 K and 960 K. Crystallographic anisotropy in this system is exemplified by zero coverage sticking probabilities with the crystal at room temperature: {110}, 1&#x0303;0^?2; {111}, 0.08; {411}, 0.4; {100}, 0.59; {310}, 0.72; {320}, 0.73. Results for planes on the [001] zone are quantitatively described by a general model developed for adsorption on stepped planes as an extension to the precursor-state order-disorder model for adsorption kinetics of King and Wells. It is shown that nitrogen dissociation only takes place at vacant pairs of {100} sites, but that subsequently the chemisorbed adatoms so formed may migrate out onto {110} terraces. The results are critically analysed in terms of the available LEED and work function data for nitrogen on tungsten single crystal planes, and the general model developed by Adams and Germer.     

Growth of nano-crystalline diamond on single-crystalline diamond by CVD method

Nanocrystalline (NC) diamond films are grown by chemical vapor deposition on various single crystal diamond faces. Under conditions of NC diamond growth, the growing filmmorphology is reduced to two planes: {100} and {111}. The {100} planes are smooth and homoepitaxial layerby-layer growth occurs on them, whereas the NC film formed by twin crystalliteswith sizes of several tens and hundreds nanometers grows on {111} planes. Nitrogen impurity sharply increases the diamond growth rate.     

CdGd2(WO2)4单晶的顺磁共振谱研究

通过粉末XRD测定了CdGd₂(WO₂)₄单晶的晶格常数,由σ- T和ESR实验得出晶体具有顺磁性,但又具有磁各向异性,探讨了晶体的磁各向异性与晶体结构的关系,计算了各向异性g²张量,所得结果和实验符合甚好.      

Nanosecond UV laser damage and ablation from fluoride crystals polished by different techniques

Ablation thresholds and damage behavior of cleaved and polished surfaces of CaF₂, BaF₂, LiF and MgF₂ subjected to single-shot irradiation with 248 nm/14 ns laser pulses have been investigated using the photoacoustic mirage technique and scanning electron microscopy. For CaF₂, standard polishing yields an ablation threshold of typically 20 J/cm². When the surface is polished chemo-mechanically, the threshold can be raised to 43 J/cm², while polishing by diamond turning leads to intermediate values around 30 J/cm². Cleaved surfaces possess no well-defined damage threshold. When comparing different fluoride surfaces prepared by diamond turning it is found that the damage resistivity roughly scales with the band gap. We find an ablation threshold of 40 J/cm² for diamond turned LiF while the MgF₂ surface can withstand a fluence of more than 60 J/cm² without damage. The damage topography of conventionally polished surfaces shows flaky ablation across the laser-heated area with cracks along the cleavage planes. No ablation is observed in the case of chemo- mechanical polishing; only a few cracks appear. Diamond turned surfaces show small optical absorption but mostly cracks and ablation of flakes and, in some cases, severe damage in the form of craters larger than the irradiated area. The origin of such different damage behavior is discussed.     

CVD金刚石薄膜孪晶形成的原子机理分析

采用X射线衍射技术、电子背散射衍射技术和扫描电镜分别观察了不同甲烷浓度条件下沉积的CVD自支撑金刚石薄膜的宏观织构、晶界分布和表面形貌. 研究了一阶孪晶在金刚石晶体{111}面生长的原子堆垛过程. 结果表明，由于一阶孪晶〈111〉60°的取向差关系以及{111}面的原子堆垛结构，使{111}面上容易借助碳原子的偏转沉积产生一阶孪晶. 低甲烷浓度时，碳原子倾向于在表面能较低的{111}面沉积，为孪晶的形成提供了便利，且高频率孪晶使薄膜织构强度减弱. 甲烷浓度升高使生长激活能较小的{001}面成为主要前沿生长面，因而只有〈001〉晶向平行薄膜法向的晶粒能够不断长大，因此孪晶形核概率明显减小. 另外，在薄膜中发现二阶孪晶，并对二阶孪晶的形成进行了分析. 关键词： 金刚石薄膜 孪晶 原子机理 取向差