Magneto-intersubband zener tunneling in a wide GaAs quantum well at high filling factors

The dependence of the differential resistance r _xx on the dc current density J _dc in a wide GaAs quantum well with two occupied size quantization subbands has been investigated at the temperature T = 4.2 K in the magnetic fields B < 1 T. A peak, whose position is given by the relation 2R _c eE _H = ħω_c/2, where R _c is the cyclotron radius, E _H is the Hall electric field, and ω_c is the cyclotron frequency, has been observed in the r _xx (J _dc) curves at high filling factors. The experimental results are attributed to Zener tunneling of electrons between the Landau levels of different subbands.     

Resonance microwave photoresistance of a two-subband electron system at large filling factors

The microwave photoresistance of a double GaAs quantum well with two occupied size-quantization sub-bands E ₁ and E ₂ has been studied at the temperatures T = 1.6–4.2 K in the magnetic fields B < 0.5 T. The microwave photoresistance of such a system has been found to have a maximum amplitude when the maximum of the magneto-intersubband oscillations with the number k = (E ₂ − E ₁)ℏω_c coincides with the maximum or minimum of the ω/ω_c oscillations, where ω is the microwave frequency and ω_c is the cyclotron frequency. It has been shown that the resonance photoresistance that appears in the kth maximum of the magneto-intersubband oscillations is determined by the condition ℏω/(E ₂ − E ₁) = (j ± 0.2)/k, where k and j are positive integers.     

Hall breakdown in a modulation-doped GaAs/AlAs heterostructure

The effect of dc current I _dc on the electron transport in a GaAs quantum well with AlAs/GaAs superlattice barriers is studied experimentally at a temperature of 4.2 K in magnetic fields up to 2 T. A sharp increase in resistance R _xx is observed in magnetic fields higher than the critical field B _c. The value of B _c is found to decrease with increasing the current I _dc. The phenomenon observed in the experiment is qualitatively explained by the electric breakdown of superlattice barriers under the action of the Hall field.     

Zener tunneling between Landau levels in a double quantum well at high filling factors

Differential resistance r _xx in a double GaAs quantum well with two occupied size-quantization subbands has been studied at a temperature of 4.2 K in magnetic fields B < 2 T. The oscillations of r _xx with a period in the inverse magnetic field determined by the value of a dc bias current I _dc have been discovered in the electron system under investigation at high filling factors in the presence of I _dc. The amplitude of magneto-intersubband oscillations has been shown to increase in the r _xx oscillation maxima, while the oscillation reversal has been observed in the minima. The discovered oscillations have been shown to be due to Zener tunneling of electrons between Landau levels tilted by a Hall electric field. The experimental data are qualitatively explained by the effect of intersubband transitions on the I _dc-dependent component of the electron distribution function.     

On the phase boundaries of the integer quantum Hall effect. Part II

It has been shown that the observation of the transitions between the dielectric phase and the integer-quantum-Hall-effect phases with the quantized Hall conductivity σ _xy ^q ≥ 3e ²/h announced in a number of works is unjustified. In these works, the crossing points of the magnetic-field dependence of the diagonal resistivity ρ _xx at different temperatures T and ω_cτ = 1 have been misidentified as the critical points of the phase transitions. In fact, these crossing points are due to the sign change of the derivative dρ _xx /dT owing to the quantum corrections to the conductivity. Here, ω_c = eB/m is the cyclotron frequency, τ is the transport relaxation time, and m is the effective electron mass.     

Influence of transport current and thermal fluctuations on the resistive properties of HTSC+CuO composites

Measurements of the temperature dependence of the electrical resistance R(T) below the superconducting transition temperature have been performed at different values of the transport current in HTSC+CuO composites modeling a network of weak S-I-S Josephson junctions (S—superconductor, I—insulator). It has been shown experimentally that the temperature dependence R(T) at different values of the transport current is adequately described by means of the mechanism of thermally activated phase slippage developed by Ambegaokar and Halperin for tunnel structures. Within the framework of this model we have numerically calculated the temperature dependence of the critical current J _c(T) as defined by various criteria. Qualitative agreement obtains between the measured and calculated temperature dependences J _c(T). Fiz. Tverd. Tela (St. Petersburg) 41, 969–974 (June 1999)     

Submillimetric cyclotron resonance linewidths and electron relaxation time in copper

For the first time submillimetric microwaves (λ<1 mm) are used to observe Azbel' Kaner cyclotron resonance in metals. The very high frequency used (typicallyF≅400 GHz) gives a large value ofωτ (typically 500) and therefore very sharp peaks. The fundamental resonance fieldH _c=m ^* cω/e is rather high (typically 200 KG), so subharmonicsH _c/n can be observed at many values ofH in the field region 0–27 KG. If relatively few electrons participate in the resonance and ifω _cτ≧50 (ω _c=eH/m ^* c,τ relaxation time) thenChambers has shown that the line shapes are independent of relaxation time while the fractional linewidthΔH/H varies as l/ωτ. For the belly orbit in pure copper the conditions of Chambers' theory are satisfied forH≧20 KG parallel to [111] axis.m ^* is a minimum andτ=1.8×10⁻¹⁰ s.     

Effect of upflowing field-aligned electron beams on the electron cyclotron waves in the auroral magnetosphere

The role of low density upflowing field-aligned electron beams (FEBs) on the growth rate of the electron cyclotron waves at the frequencies ω _r < Ω_e, propagating downward in the direction of the Earth’s magnetic field, has been analysed in the auroral region at ω _e/Ω_e < 1 where ω _e is the plasma frequency and Ω_e is the gyrofrequency. The FEBs with low to high energy (E _b) but with low temperature (T _‖b) have no effect on these waves. The FEBs with E _b < 1 keV and T _‖b (> 1.5 keV) have been found to have significant effect on the growth rate. Analysis has revealed that it is mainly the T _‖b which inhibits the growth rate (magnitude) and the range of frequency (bandwidth) of the instability mainly in the higher frequency spectrum. The inhibition in the growth rate and bandwidth increases with increase in T _‖b. The FEBs with less E _b (giving drift velocity) reduce growth rate more than the beams with larger E _b. The inhibition of growth rate increases with the increase in the ratio ω _e/Ω_e indicating that the beams are more effective at higher altitudes.      

Nonlinear magnetotransport in a two-dimensional electron system with anisotropic mobility

Nonlinear magnetotransport of two-dimensional electrons in modulation-doped GaAs/AlAs heterostructures with anisotropic mobility is investigated. The mobility attains its maximum and minimum values in the $\left[ {1\bar 10} \right]$ and [110] directions, respectively. It is found that, upon an increase in the direct electrical current I _dc though Hall bars oriented along the [110] direction, the transition of the two-dimensional system to the state with differential resistance r _xx ≈ 0 in a magnetic field occurs at a lower value of I _dc and is accompanied by a more pronounced “plunge” into the region of negative r _xx values as compared to bars oriented along the $\left[ {1\bar 10} \right]$ direction. The results are explained by the impact of mobility on the spectral diffusion of nonequilibrium charge carriers.     

Is the Abrikosov model applicable for describing electronic vortices in plasmas?

A new model of electronic vortices in plasma is studied. The model assumes that the profile of the Lagrangian invariant I, equal to the ratio I=Ω/n of the electronic vorticity to the electron density, is given. The proposed approach takes into account the magnetic Debye scale r _B ≃B/4πen, which leads to breakdown of plasma quasineutrality. It is shown that the Abrikosov singular model cannot be used to describe electron vortices in plasmas because of the fundamental limitation on the electron vorticity on the axis of a vortex in a plasma. Analysis of the equations shows that in the model considered for the electronic vorticity, the total magnetic flux decreases when the size r ₀ of the region in which I≠0 becomes less than c/ω_pe (ω_pe is the electron plasma frequency). For ω _pe r ₀/c≪1, an electronic vortex is formed in which the magnetic flux decreases as r ₀ ² and the inertial component predominates in the electronic vorticity. The structure arising as ω _pe r ₀/c⇒0 is a narrow “hole” in the electron density, which can be identified from the spectrum of electromagnetic waves in this region. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 7, 461–466 (10 April 1998)     

Ponderomotive acceleration of electrons by a whistler pulse

A Gaussian whistler pulse is shown to cause ponderomotive acceleration of electrons in a plasma when the peak whistler amplitude exceeds a threshold value and the whistler frequency is greater than half the cyclotron frequency, ω>ω _c /2. The threshold amplitude decreases with the ratio of plasma frequency to electron cyclotron frequency, ω _p /ω _c . However, above the threshold amplitude, the acceleration energy decreases with ω _p /ω _c . The electrons gain velocities about twice the group velocity of the whistler.     

Dielectric properties of perovskite ceramics of (1–x)BiFeO3 ? x(KBi)1/2TiO3 (0.40 < x < 0.85) solid solutions from impedance spectroscopy data

The dielectric properties of the ceramics of (1 − x)BiFeO₃ − x(KBi)_1/2TiO₃ (0.40 < x < 0.85) solid solutions with an orthorhombic structure have been studied using impedance spectroscopy in the frequency range 25–10⁶ Hz at different temperatures. It has been shown that these solid solutions undergo a diffuse ferroelectric phase transition. The Curie temperature is found to be in the range 620–640 K. The activation energies of dielectric polarization relaxation (δE _M ) and dc charge carriers (ΔE _dc) are determined. It has been established that, in the vicinity of 460 K, ΔE _dc increases jumpwise as the temperature increases.     

Quantum Hall effect in a quasi-three-dimensional HgTe film

Magnetotransport of a quasi-three-dimensional (100-nm) HgTe film in quantized magnetic fields has been experimentally investigated. It has been found that the film exhibits pronounced quantization of the Hall resistance accompanied by deep minima of the dissipative resistance. A transition from the three-dimensional behavior of Shubnikov-de Haas oscillations in semiclassical magnetic fields (ω_cτ _q ≤ 1) to a two-dimensional one in the quantum-Hall-effect regime has been discovered. The conduction electron cyclotron effective mass in mercury telluride has been determined from the temperature dependence of the Shubnikov-de Hass oscillations in such magnetic fields.     

Dissipative Cyclotron Motion of a Charged Quantum-Oscillator and Third Law

In this work, low temperature thermodynamic behavior in the context of cyclotron motion of a charged-oscillator with different coupling schemes is analyzed. We find that finite dissipation substitutes the zero-coupling result of exponential decay of entropy by a power law behavior at low temperature. The power of the power law explicitly depends on the nature of the power spectrum of the heat bath. It is seen that velocity–velocity coupling is the most advantageous coupling scheme to ensure the third law of thermodynamics. The cases of confinement (ω ₀≠0) and without confinement (ω ₀=0) are discussed separately. It is also revealed that different thermodynamic functions are independent of magnetic field at very low temperature for ω ₀≠0, but they depend on cyclotron frequency (ω _c =eB/mc) for ω ₀=0.     

Quantum corrections to the conductance of n-GaAs films in a strong magnetic field

The conductance of doped n-GaAs films is studied experimentally as a function of magnetic field and temperature in strong magnetic fields right up to the quantum limit (ħω_c = E _F). The Hall conductance G _xy is virtually independent of temperature T until the transverse conductance G _xx is quite large compared with e ²/h. In strong fields, when G _xx becomes comparable to e ²/h, G _xy starts to depend on T. The difference between the conductances G _xx at the two temperatures 4.2 and 0.35 K depends only weakly on the magnetic field H over a wide range of magnetic fields, while the conductances G _xx themselves vary strongly. The results can be explained by quantum corrections to the conductance as a result of the electron-electron interaction in the diffusion channel. The possibility of quantization of the Hall conductance as a result of the electron-electron interaction is discussed. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 3, 201–206 (10 February 1998)     

Pinning of pancake vortices in a three-dimensional Josephson medium and structure of the vortex lattice in the “critical” state

A system of pancake vortices formed near the boundary of a sample in a monotonically increasing external magnetic field is calculated with allowance for pinning due to the cellular structure of the medium for various values of the pinning parameter I, which is proportional to the critical current of the junction and the cell diameter. The shortest distance from the outermost vortex to the nearest neighbor is proportional to I ⁻¹¹. It is shown that the pinning parameter has a critical value I _c separating two regimes with different types of critical states. For I<I _c the external magnetic field has a threshold value H _t(I), above which the field immediately penetrates the interior of the junction to an infinite distance. For I>I _c the magnetic field decays linearly from the boundary into the interior of the junction. The value obtained in the study, I _c=3.369, differs from the value of 0.9716 postulated by other authors. The dependence of the slope of the magnetic field profile near the boundary on I is determined. It is shown that the slope is independent of I in intervals 2πk<I<2πk+π. Fiz. Tverd. Tela (St. Petersburg) 39, 1958–1963 (November 1997)     

Correlation between the electric-field effect and weak-link type in YBa2Cu3−x Oy and YBa2Cu3−x Oy /Agx high-T c superconducting ceramics

An experimental study is reported of the effect of an electric field E⩽120 MV/m and of temperature T on the critical current I _c and I-V characteristics of yttrium-based high-T _c superconducting ceramics. The materials studied were copper-deficient ceramics, YBa₂Cu_3−x O_y (D samples), and YBa₂Cu_3−x O_y/Ag_x ceramics [S samples with silver present in amounts equal to the copper deficiency (0⩽x⩽0.4)]. It has been established that in D samples at 77 K, the electric field increases I _c and reduces substantially R for I>I _c, whereas in S samples no field effect is observed. Measurements of the I _c(T) dependence near the critical temperature showed that they can be described for all samples by a relation of the type I _c =const(1−T/T _c )^α, where α≈1 for the D samples, and α≈2 for the S samples. The results obtained suggest that the electric-field effect correlates with the existence in the ceramic of SIS-type weak links at grain boundaries. Fiz. Tverd. Tela (St. Petersburg) 40, 1195–1198 (July 1998)     

Weak-link bi-epitaxial Josephson junctions in a YBa2Cu3O7−δ film on BaZrO3/CeO2/SrTiO3

A bi-epitaxial (001)YBa₂Cu₃O_7−δ /(110)BaZrO₃/(001)CeO₂ three-layer heterostructure has been grown on (100)SrTiO₃ by laser ablation. The epitaxial relations between the layers making up the heterostructure were derived from x-ray diffraction data. The I _cR_n product for the bi-epitaxial Josephson junctions thus obtained was within 1–1.5 mV for 4.2 K, and 30–60 μV for 77 K. The normal resistance R _n=(2–5 Ω) was practically independent of temperature. The magnetic field dependences of I _c had typically a clearly pronounced main maximum, followed by distorted subsequent peaks. Interaction of the Josephson ac current with self-induced electromagnetic waves at the 45° grain boundary and with external microwave radiation (f=11 GHz) produced current steps in the I-V characteristics of the bi-epitaxial junctions at the corresponding voltages. Fiz. Tverd. Tela (St. Petersburg) 39, 1732–1738 (October 1997)     

Resistance and magnetic susceptibility of superconducting lead embedded in nanopores of glass

This paper reports on a study of the resistance and differential magnetic susceptibility χ _ac of lead embedded in nanosized glass pores with a diameter of ∼7 mm, which was performed at temperatures of 6–300 K and magnetic fields of up to 6 T. The field dependence of the resistance R(H) and the temperature dependences of the real, χ″(T), and imaginary, χ″(T), parts of magnetic susceptibility reveal indications of superconducting phase transitions associated with the volume and surface superconductivity of Pb nanopar ticles. The measurements of the field dependence of resistance have been used to set up the H _c -T _c phase diagram and to carry out a comparison with the study of the heat capacity performed on the same samples.