Resonant Raman scattering in germanium and zincblende-type semiconductors temperature dependence

We have measured the resonance in the Raman scattering near the E₁ gaps of InAs and of a Ge_0.77 Si_0.23 alloy at 77, 300 and 594°K. In contrast to the E₁ gap determined in absorption and transmission measurements, the coresponding peak in the spectral dependence of the scattering cross section shifts very little with temperature; it occurs at all temperatures very near the energy of the absorption peak measured at low temperatures (∼ 77°K).     

Resonant Raman scattering by strained and relaxed germanium quantum dots

This paper reports on the results of resonant Raman scattering investigations of the fundamental vibrations in Ge/Si structures with strained and relaxed germanium quantum dots. Self-assembled strained Ge/Si quantum dots are grown by molecular-beam epitaxy on Si(001) substrates. An ultrathin SiO₂ layer is grown prior to the deposition of a germanium layer with the aim of forming relaxed germanium quantum dots. The use of resonant Raman scattering (selective with respect to quantum dot size) made it possible to assign unambiguously the line observed in the vicinity of 300 cm^?1 to optical phonons confined in relaxed germanium quantum dots. The influence of confinement effects and mechanical stresses on the vibrational spectra of the structures with germanium quantum dots is analyzed.     

Resonant multiphonon Raman scattering in AgBr

Resonant Raman scattering in AgBr single crystals is studied at low temperatures. Excitation in resonance with the indirectΓ — L exciton as intermediate state gives rise to selectively enhanced narrow two-phonon Raman scattering. The phonons involved are pairs ofLA andTO phonons of opposite wavevectors near theL-point. A simple model involving one discrete exciton level is developed to explain the resonance behaviour. The temperature dependence of the scattered intensity, that is studied for 1.8 K <T < 35 K, can consistently be interpreted within this model as being due to the lifetime of the intermediate state. Assuming that the excitons predominantly decay by one-phonon scattering with long wavelength acoustical phonons the predicted temperature dependence of the intensity is found in good agreement with the experimental result. Additional scattering peaks are believed to be due to third-order processes involving an acousticalX-phonon in addition to theL-phonons of the second-order scattering. Using an oriented sample the resonant Raman peaks are found to be polarized.     

Resonant Raman scattering in amorphous bulk selenium

The resonant Raman spectrum of a-Se bulk has been observed in the low frequency region and in the range of the wavelength 5145ndash;6328 Å.The maximum of the resonance is centered at 5998 Å and shows a sharp peak at 31 cm^?1 Stokes shift, whose intensity varies with wavelength.The experimental data were interpreted, and related to the behaviour of the derivative of the dielectric function in the same material.     

Resonant Raman scattering by plasmons in n-type Ge

We have measured the Raman efficiency for plasmon scattering in n-type Ge as a function of laser excitation frequency in the range of the E₁ and E₁+Δ₁ optical gaps (2.1–2.5 eV). Our results can be explained by a mechanism involving the macroscopic electric field that accompanies the plasma oscillation in a manner similar to that responsible for Fröhlich-interaction-induced forbidden LO-phonon resonances in polar semiconductors plus some contribution of the standard cdf mechanism for scattering by plasmons.     

Resonant Raman scattering in polyacetylene under hydrostatic pressure

The results of resonant Raman scattering experiments on trans-poly-acetylene under hydrostatic pressure are reported. The measurements were performed in a diamond anvil cell. The spectra could be measured up to 44 kbar. The pressure dependence of the 1295 cm^-1 line was measured in a sapphire cell up to 17 kbar. The results show that the changes in the phonon frequencies are very small. By comparing the pressure dependence of the Raman bands with their dependence on the photon energy of the exciting laser line it is possible to determine the pressure variation of the electronic energy gap. The results are consistent with previous measurements of the absorption spectrum under hydrostatic pressure which were carried out up to 13.5 kbar. The gap is found to decrease rapidly with pressure but the decrease tends to saturate at high pressures. The results are consistent with a model in which chain-chain interaction plays a dominant role.     

Raman scattering and short range order in amorphous germanium

Variations in short range order of amorphous Ge films are determined from a combination of depolarized Raman scattering, optical absorption, and previous radial distribution function studies. An estimated minimum value of the bond angle width of Δθ ? 9°, obtained for evaporated, anneal stable a-Ge differs significantly from a recent EXAFS estimate. The maximum disorder observed in dc sputtered films deposited at ～90K indicates that an ～20% variation in bond angle width is possible in a-Ge. Substantial modification of the Raman spectrum of the low temperature film annealed at 300K also demonstrates that lower temperature structural relaxation processes involve changes in short range order.     

Resonant Raman scattering and luminescence of excitonic polaritons

Resonant light scattering spectra of excitonic polaritons are calculated with a model system consisting of one exciton band and LO and LA phonons by solving a balance equation describing the kinetic energy relaxation of polariton. The relative intensity of Raman sattering and luminescence changes with varying the incident photon energy because of the competition among various decay mechanisms of polariton. The results are in qualitative agreement with recent experimental observations.     

Raman scattering in germanium at high pressure: Isotope effects

The first-order Raman scattering in isotopically enriched samples of germanium ⁷⁰Ge, ⁷²Ge, and ⁷⁴Ge and germanium with the natural isotopic composition is investigated at high pressures. It is found that the isotopic dependence of the frequency of the LTO(Γ) mode in isotopically pure germanium samples can be described in the harmonic approximation (ν∝m ^−1/2). At the same time, the frequency of the LTO(Γ) mode of germanium of natural isotopic composition apparently contains a contribution due to isotopic disorder effects. Pis’ma Zh. éksp. Teor. Fiz. 69, No. 3, 211–214 (10 February 1999)     

Resonant Raman scattering in thallium chloride: simple model calculations

Calculations of the resonance enhancement of the “forbidden” 1LO line in thallium chloride are performed, using a simple hydrogenic model for exciton states. A large 1LO Raman scattering and some features of the cross section are in good agreement with the experimental results.     

Resonant Raman scattering in Mn:ZnO dilute magnetic semiconductors

We report on micro-Raman measurements performed under various visible excitations on wurtzite Zn_1−xMn_xO thin films grown by MOCVD, for a wide range of Mn content (0<x<0.22). We observe a shift of the frequency of the E₂ phonon for increasing Mn content, indicating a substitution of the Mn atoms at the tetrahedral Zn sites of the host matrix. All spectra also reveal a dominant feature related to local vibrations of Mn atoms, as well as the A₁ (LO) phonon of the ZnMnO alloy. Both features are resonantly enhanced by the absorption of the incident laser light by internal transitions of the Mn²⁺ ions.     

Resonant Raman scattering of optical phonons in self-assembled quantum dots

We have investigated the carrier relaxation mechanism in InGaAs/GaAs quantum dots by photoluminescence excitation (PLE) spectroscopy. Near-field scanning optical microscope successfully shows that a PLE resonance at a relaxation energy of 36 meV can be seen in all single-dot luminescence spectra, and thus can be attributed to resonant Raman scattering by a GaAs LO phonon to the excitonic ground state. In addition, a number of sharp resonances observed in single-dot PLE spectra can be identified as resonant Raman features due to localized phonons, which are observed in the conventional Raman spectrum. The results reveal the mechanism for the efficient relaxation of carriers observed in self-assembled quantum dots: the carriers can relax within the continuum states, and make transitions to the excitonic ground state by phonon emission.     

Resonant electronic Raman scattering on donor levels in cubic semiconductors

Inelastic resonant electronic Raman scattering (ERS) on donor levels in direct band gap cubic semiconductors is studied. The theory of three-branch and five-branch excitonic polaritons for ERS is developed. The excplicit expressions and angular dependences are derived for the scattering cross section.The authors would like to thank Prof. Nguyen Van Hieu for suggesting the problem and for continue support. Many thanks are due to the Research Grant No 86–87 of the Third World Academy of Science for the support.