μSR study of intermediate heavy fermion system CeRuSi2

We have studied the magnetic spinel (Zn)[Fe₂]O₄ (T_ N\approx10.5\ K) and the non‐magnetic spinels (Zn)[Al₂]O₄, (Zn)[Ga₂]O₄, (Zn)[ZnTi]O₄ and (Zn)[ZnSn]O₄ , both with surface and decay channel muons. In (Zn)[Fe₂]O₄ the relaxation rate increases monotonically from room temperature down, typical for a paramagnet. Around 30 K, an additional, stronger damped signal appears which is the signature of short‐range ordered (SRO) regions. Their total volume fraction increases drastically towards T_ N (reaching 75%) and astonishingly, continues to be present also below T_ N where the rest of the material has become long‐range ordered. Longitudinal field μSR proves the SRO to be dynamic. In (Zn)[Al₂]O₄ and (Zn)[Ga₂]O₄ muon depolarization is caused solely by ²⁷Al or ^69,71Ga nuclear dipoles. In the inverse spinel (Zn)[ZnTi]O₄, half of the implanted muons depolarize rapidly (\lambda\approx 3μs^-1 at room temperature). This, together with repolarization behavior in longitudinal fields indicates that the muon in (Zn)[ZnTi]O₄ undergoes a chemical reaction after implantation forming muonium. The fact that no such muonium formation occurred in another inverse spinel ( (Zn)[ZnSn]O₄) means that the presence of muonium is not connected to the inverse structure but rather due to the presence of Ti which offers two d‐electrons to participate in the chemical bonding. Additional evidence for d‐electron participation is provided by ⁶⁷Zn‐Mössbauer data which indicate unusual electron densities at the ⁶⁷Zn nuclei only in (Zn)[ZnTi]O₄.     

Evidence for muonium emission from an SiO2 layer on n-type Si and the positive muon state in Si

Evidence for the emission of slow muonium atoms from a 3.0-nm-thick SiO₂ layer covered on an n-type Si is reported. Also, upon applying an rf-resonance technique at the muon frequency, a time-differential observation of a delayed state-change from muonium to diamagnetic muon at room temperature was observed. Combining results obtained by use of longitudinal field decoupling and transverse spin rotation methods, the conversion rate was estimated to be 5 to 10 μs⁻¹. Both of the above results, namely the observation of the emission and state-change of muonium, suggest a process in which μ⁺ initially captures an electron from Si, then quickly converts to μ⁺ again during thermal diffusion in the Si towards the SiO₂ layer. Within the oxide layer, muonium is again formed and subsequently is emitted from the SiO₂ surface.     

Stacked and nanolaminated Al2O3/TiO2 for surface passivation and encapsulation of silicon

Silicon solar cells passivated with Al₂O₃ require a capping layer that protects the passivation layer from humidity because of sensitivity of Al₂O₃ to moisture. Al₂O₃/TiO₂ stacks obtained by atomic layer deposition have been known to provide a high level of passivation layers because of their excellent field‐effect passivation. In this work, degradation of this Al₂O₃/TiO₂ stack, when exposed to humidity, is examined, and an attempt is made for a humidity‐resistant encapsulation layer by adding Al₂O₃/TiO₂ nanolaminates that can be deposited in‐situ without breaking vacuum. Placing the nanolaminate on top of the TiO₂ and Al₂O₃ stack is found to lead to almost no degradation even after 10 days of humidity exposure. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Muon spin-lattice relaxation and muonium diffusion in ice

Longitudinal muon spin relaxation is measured in ice, using samples with and without enrichment in H₂ ¹⁷O, with a view to studying the mobility of the muonium fraction. A conventional analysis of the data, on the assumption that relaxation of the diamagnetic fraction is negligible, suggests that more than one mechanism of muonium relaxation is at work. A Bayesian analysis warns that separation of the diamagnetic and paramagnetic signals may not be so straightforward.     

Investigation of 4H—SiC metal—insulation—semiconductor structure with Al2O3/SiO2 stacked dielectric

Atomic layer deposited (ALD) Al₂O₃/dry-oxidized ultrathin SiO₂ films as high-k gate dielectric grown on the 8° off-axis 4H-SiC (0001) epitaxial wafers are investigated in this paper. The metal-insulation-semiconductor (MIS) capacitors, respectively with different gate dielectric stacks (Al₂O₃/SiO₂, Al₂O₃, and SiO₂) are fabricated and compared with each other. The I-V measurements show that the Al₂O₃/SiO₂ stack has a high breakdown field ( ≥ 12 MV/cm) comparable to SiO₂, and a relatively low gate leakage current of 1× 10^-7 A/cm² at electric field of 4 MV/cm comparable to Al₂O₃. The 1-MHz high frequency C-V measurements exhibit that the Al₂O₃/SiO₂ stack has a smaller positive flat-band voltage shift and hysteresis voltage, indicating less effective charge and slow-trap density near the interface.     

MuSR/μ+SR studies in KDP and DKDP

The temperature dependence of muon interactions has been studied in ferroelectric KDP ( H₂KPO₄) and DKDP ( D₂KPO₄) using conventional μSR and muon spin resonance spectroscopy. In longitudinal field measurements, a fast relaxing component and a slow relaxing component were observed. The slow relaxing component is attributed to diamagnetic muons. The muon spin resonance measurements indicate that the fast relaxing component results from some muonium like species: either normal or anomalous. In zero field and weak longitudinal field μSR (0–100 G), a remarkable peak in the fast relaxing component is observed around 220 K in both KDP and DKDP. An additional feature is also seen around 300 K. The amplitude of the resonance measurement has a broad minimum around 200 K which corresponds to the maximum in the relaxation rate in longitudinal field (100 G). The temperature dependence of the muonium relaxation rate in KDP is almost identical to that of DKDP. The diamagnetic fraction also shows almost no difference in relaxation rate or asymmetry for DKDP and KDP. This revised version was published online in August 2006 with corrections to the Cover Date.     

Observation of higher magnetization on the substitution of Al for Co in La2MnCoO6

Upon substitution of non-magnetic Al³⁺ for diamagnetic, low-spin, Co³⁺ in ferromagnetic La₂MnCoO₆, the ferromagnetic moment, measured at 82 K and 15 kOe, is found to increase initially with Al content and then decreases, though the magnetic transition temperature decreases continuously on increasing x in La₂MnCo_1−xAl_xO₆.     

Cr3+:Al2O3透明多晶陶瓷光谱特性分析

对透光性良好的Cr³⁺:Al₂O₃透明多晶陶瓷的光谱性能 进行了研究，其吸收光谱中吸收峰与单晶红宝石相一致，按吸收光谱和Tanabe-Sugano能级 图，算出其晶场强度参数D_q及Racah参数B分别为1792cm^-1， 689cm ^-1，D_q/B=2.6，陶瓷中Cr³⁺离子所处格位的晶体场强 比单晶弱一些，但Cr³⁺:Al₂O₃透明陶瓷仍属于强场晶 体材料；当Cr³⁺掺杂浓度到达0.8wt%时，陶瓷的发射谱仍保持较好的R线发射 ；随Cr³⁺掺杂浓度的增大，激发峰位发生“红移”.在Cr³⁺:Al₂O₃透明多晶陶瓷的荧光谱上，发现一个波长为670nm的发射峰，经激发 谱确认为Cr³⁺的发射峰. 关键词： 氧化铝 透明陶瓷 离子格位 光谱性质     

Muon bonding versus muonium formation: Muon-Spin-Relaxation in α-Al2O3

Results of Muon-Spin-Relaxation (μSR) experiments on well-defined single crystals of corundum (α-Al₂O₃) are reported. Major issue in this study is the controversy of muon bonding or muonium formation in insulators. Transverse, zero-field and longitudinal field measurements were performed as a function of temperature or applied field. The obtained results indicate that muon-oxygen bonding occurs in α-Al₂O₃, having (at least) two (μO) states as found earlier for α-Fe₂O₃. The occurrence of a 10% missing fraction suggests Mu states, although Mu was not observed in our measurements. These results and their implications are discussed in light of other experimental μSR studies on insulating oxides and the above-mentioned controversy.     

Interfacial reactions and oxidation behavior of Al2O3 and Al2O3/Al coatings on an orthorhombic Ti2AlNb alloy

The uniform and dense Al₂O₃ and Al₂O₃/Al coatings were deposited on an orthorhombic Ti₂AlNb alloy by filtered arc ion plating. The interfacial reactions of the Al₂O₃/Ti₂AlNb and Al₂O₃/Al/Ti₂AlNb specimens after vacuum annealing at 750 °C were studied. In the Al₂O₃/Ti₂AlNb specimens, the Al₂O₃ coating decomposed significantly due to reaction between the Al₂O₃ coating and the O-Ti₂AlNb substrate. In the Al₂O₃/Al/Ti₂AlNb specimens, a γ-TiAl layer and an Nb-rich zone came into being by interdiffusion between the Al layer and the O-Ti₂AlNb substrate. The γ-TiAl layer is chemically compatible with Al₂O₃, with no decomposition of Al₂O₃ being detected. No internal oxidation or oxygen and nitrogen dissolution zone was observed in the O-Ti₂AlNb alloy. The Al₂O₃/Al/Ti₂AlNb specimens exhibited excellent oxidation resistance at 750 °C.     

Effective silicon surface passivation by atomic layer deposited Al2O3/TiO2 stacks

In this work atomic layer deposition of Al₂O₃ and TiO₂ has been used to obtain dielectric stacks for passivation of silicon surfaces. Our experiments on n‐ and p‐type silicon wafers deposited by thin Al₂O₃/TiO₂ stacks show that a considerably improved passivation is obtained compared to the Al₂O₃ single layer. For Al₂O₃ films thinner than 20 nm the emitter saturation current density decreases with increasing TiO₂ thickness. Especially the passivation of ultrathin (～5 nm) Al₂O₃ is very effectively enhanced by TiO₂ due to a decreased interface defect density as well as an increased fixed negative charge in the stacks. Hence, the thin Al₂O₃/TiO₂ stacks developed in this work can be used as a passivation coating for Si‐based solar cells. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Cr4+在Al2O3多晶体中的光谱性能研究

采用传统无压烧结工艺制备Cr:Al₂O₃透明多晶陶瓷.测定了其退火前后的吸收光谱和荧光光谱，发现在Al₂O₃六配位的八面体结构中，Cr⁴⁺的荧光发射也处在1100—1600nm波段的红外区间，荧光发射峰位于1223nm附近，类似Cr⁴⁺在四面体中的发光行为.同时由于氧化铝晶格常数较小，晶体场强较强，使Cr⁴⁺:Al₂O_{3< 关键词： 4+')" href="#">Cr⁴⁺ 2}O₃透明陶瓷')" href="#">Cr:Al₂O₃透明陶瓷 光谱性质 八面体     

Muons and muonium in cryocrystals

We present a collection of measurements of the muon and muonium asymmetries and relaxation parameters in cryocrystals of N₂, CO, Xe,¹³⁶Xe and Ne as functions of temperature. Generally, the fractions of the two species can be attributed to a competition between the formation of muonium or a diamagnetic species, where processes involving transport of spur electrons are important.     

Theμ + state under decoupling field observed by spin resonance method in CS2, water and benzene

The muon spin resonance method was applied to measure the ⁺ polarization corresponding to the muon state in diamagnetic compounds in CS₂, water and benzene under 3 kG decoupling field. We observed almost the same diamagnetic polarizations under decoupling field, compared to those at zero decoupling field observed under the transverse field, except in CS₂ The results indicate that most of the so called missing fraction is not associated with diamagnetic species produced as a final state of rapid chemical reactions of muonium in these samples.The authors acknowledge helpful discussions with Professor T. Yamazaki. This work is supported by the Grant-in-Aid of the Japanese Ministry of Education, Culture and Science.     

Nanocomposites of Poly(vinyl alcohol) Reinforced with Chemically Modified AL2O3: Synthesis and Characterization

The surface of α-alumina (Al₂O₃) nanoparticles was first modified with γ-aminopropyltriethoxy silane as a coupling agent. Then a series of poly(vinyl alcohol)/ surface modified Al₂O₃ nanocomposite suspensions were prepared in ethanol by a simple ultrasonic irradiation process. Composite films with 5, 10, and 15 wt % of inorganic Al₂O₃ nanoparticles were achieved after solvent evaporation. The formation of the composite materials were confirmed by Fourier transform infrared spectroscopy, X-ray diffraction, field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), thermogravimetric analysis (TGA), and optical transparencies. The FE-SEM and TEM results showed a homogenous dispersion of nanoscale inorganic particles in the poly(vinyl alcohol) matrix. TGA thermographs showed that the thermal stability of the prepared Al₂O₃-reinforced nanocomposites was improved, increasing with increasing content of the nanoparticles. According to the optical transparencies, the optical clarity of poly(vinyl alcohol)/Al₂O₃ nanocomposite films was only slightly affected by the presence of the Al₂O₃ content.     

Fabrication of one-dimensional photonic crystals with Al2O3/TiO2 by pulsed laser deposition

One-dimensional photonic crystal (1D PC) mirrors consisting of Al₂O₃/TiO₂ stacks are theoretically and experimentally investigated at visible frequencies. In our experiments the refractive index of Al₂O₃ is tunable from 1.43 to 1.68. We found that the Al₂O₃/TiO₂ combination can be adopted to fabricate both broad- and narrow-band 1D PC mirrors: Substituting nanoporous Al₂O₃ for dense SiO₂ in an SiO₂/TiO₂ broad-band mirror yields the same spectral properties, while using dense Al₂O₃ in the combination can reduce the band-gap width to as low as 30 nm. The experimentally measured reflection and transmission spectra agree with the numerical results obtained by the transfer matrix method.     

Investigation of interface characteristics of Al2O3/Si under various O2 plasma exposure times during the deposition of Al2O3 by PA-ALD

Plasma-assisted atomic layer deposition (PA-ALD) is more suitable than thermal atomic layer deposition (ALD) for mass production because of its faster growth rate. However, controlling surface damage caused by plasma during the PA-ALD process is a key issue. In this study, the passivation characteristics of Al₂O₃ layers deposited by PA-ALD were investigated with various O₂ plasma exposure times. The growth per cycle (GPC) during Al₂O₃ deposition was saturated at approximately 1.4?Å/cycle after an O₂ plasma exposure time of 1.5?s, and a refractive index of Al₂O₃ in the range of 1.65–1.67 was obtained. As the O₂ plasma exposure time increased in the Al₂O₃ deposition process, the passivation properties tended to deteriorate, and as the radio frequency (RF) power increased, the passivation uniformity and the thermal stability of the Al₂O₃ layer deteriorated. To study the Al₂O₃/Si interface characteristics, the capacitance-voltage (C-V) and the conductance-voltage (G-V) were measured using a mercury probe, and the fixed charge density (Q_f) and the interface trap density (D_it) were then extracted. The Q_f of the Al₂O₃ layer deposited on a Si wafer by PA-ALD was almost unaffected, but the D_it increased with O₂ plasma exposure time. In conclusion, as the O₂ plasma exposure time increased during Al₂O₃ layer deposition by PA-ALD, the Al₂O₃/Si interface characteristics deteriorated because of plasma surface damage.     

Simulation of KrF laser ablation of Al2O3-TiC

Previous work by the authors on micromachining of Al₂O₃-TiC ceramics using excimer laser radiation revealed that a columnar surface topography forms under certain experimental conditions. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) observations show that the columns develop from small globules of TiC, which appear at the surface of the material during the first laser pulses. To understand the mechanism of formation of these globules, a 2D finite element ablation model was developed and used to simulate the time evolution of the temperature field and of the surface topography when a sample of Al₂O₃-TiC composite is treated with KrF laser radiation. Application of the model showed that the surface temperature of TiC rises much faster than that of Al₂O₃, but since TiC has a very high boiling temperature, its vaporization is significant only for a short time. By contrast, the surface temperature of Al₂O₃ rises above its boiling temperature for a much longer period, leading to a greater ablation depth than TiC. As a result, a small TiC globule stands above the Al₂O₃ surface. The results of the model are compared with experimental measurements performed by AFM. After three pulses, the height of the globules predicted by the model is about 340 nm, in good agreement with the height measured experimentally, about 400 nm.     

Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition

We report the permeation barrier properties of Al₂O₃/ZrO₂ multi-layers deposited by remote plasma atomic layer deposition. Electrical Ca degradation tests were performed to derive the water vapor transmission rate (WVTR) of Al₂O₃, ZrO₂ and Al₂O₃/ZrO₂ multi-layers at 50 °C and 50% relative humidity (RH). Al₂O₃/ZrO₂ multi-layers exhibit better barrier properties than Al₂O₃ and ZrO₂ layers, and when more individual layers were deposited in the same total thickness, the WVTR value was reduced further, indicating a better barrier property. The WVTR of the Al₂O₃ and ZrO₂ layers were 9.5 × 10⁻³ and 1.6 × 10⁻² g/m² day, respectively, but when deposited alternatively with 1 cycle of each layer, the WVTR decreased to 9.9 × 10⁻⁴ g/m² day. X-ray diffraction results indicated that ZrO₂ has a monoclinic structure but Al₂O₃ and Al₂O₃/ZrO₂ multi-layers show an amorphous structure. Cross sectional Al₂O₃/ZrO₂ multi-layer structures and the formation of a ZrAl_xO_y phase are observed by transmission electron microscopy (TEM). X-ray photoelectron spectrometry (XPS) results indicate that Al₂O₃ and ZrO₂ contain 33.7% and 37.8%, respectively, Al–OH and Zr–OH bonding. However, the ZrAl_xO_y phase contained 30.5% Al–OH and Zr–OH bonding. The results of transmittance measurement indicate that overall, Al₂O₃, ZrO₂ and Al₂O₃/ZrO₂ multi-layers show high transmittance greater than 80% in the visible region.     

Monte-Carlo simulations of Al2O3 dosimetry in uniform MV photon beams: Influence of field and detector size

This work was to evaluate the absorbed dose to different sizes Al₂O₃ dosimeter in uniform MV photon beams using Monte Carlo simulation. The absorbed dose ratio factor f_md of Al₂O₃ dosimeters was calculated. The incident beams included 4 MV–24 MV X-rays using Mohan's spectra with different field sizes. Results show that the maximum variation of f_md due to different dosimeter sizes is 5%. As the field diameter increases from 1 cm to 3 cm, the difference of f_md can be up to 8%. The results of this work show that the effect of dosimeter size and the field size can't be neglected when using Al₂O₃ dosimeter.