Large negative magnetoresistance in thiospinel CuCrZrS4

We report on large negative magnetoresistance observed in ferromagnetic thiospinel compound CuCrZrS₄. The electrical resistivity increased with decreasing temperature according to the exp(T₀/T)^1/2, an expression derived from variable range hopping with strong electron-electron interaction. The resistivity under a magnetic field was expressed by the same form with the characteristic temperature T₀ decreasing with increasing magnetic field. Magnetoresistance ratio ρ(T,0)/ρ(T,H) is 1.5 for H=90 kOe at 100 K and increases divergently with decreasing temperature reaching 80 at 16 K. Results of magnetization measurements are also presented. A possible mechanism of the large magnetoresistance is discussed.     

Femtosecond Z-scan measurement of third-order optical nonlinearities in anatase TiO2 thin films

Anatase phase TiO₂ films have been grown on fused silica substrate by pulsed laser deposition technique at substrate temperature of 750 °C under the oxygen pressure of 5 Pa. From the transmission spectra, the optical band gap and linear refractive index of the TiO₂ films were determined. The third-order optical nonlinearities of the films were measured by Z-scan method using a femtosecond laser (50 fs) at the wavelength of 800 nm. The real and imaginary parts of third-order nonlinear susceptibility χ⁽³⁾ were determined to be −7.1 × 10⁻¹¹esu and −4.42 × 10⁻¹²esu, respectively. The figure of merit, T, defined by T=βλ/n₂, was calculated to be 0.8, which meets the requirement of all-optical switching devices. The results show that the anatase TiO₂ films have great potential applications for nonlinear optical devices.     

Organic thin films based on a dicyanovinyl-quaterthiophene: Influence of electrode configuration on third-order nonlinear optical properties measured by electroabsorption spectroscopy

Electroabsorption (EA) studies at room temperature on organic thin films based on a dicyanovinyl-quaterthiophene 4T-V(CN)₂ are reported. An electric field modulation is applied to the samples for two different electrode geometries, i.e. sandwich and coplanar versus the organic layer. Changes in optical absorption coefficient of 4T-V(CN)₂ based thin films are measured and analyzed to determine the character of the optical transition in the visible range (400-800 nm). Depending on the experimental electrode configuration, magnitude of electroabsorption responses are different, possibly due to different distribution of the externally applied electric field. The results indicate a higher resolution of EA response for the sandwich electrode configuration and confirm the charge transfer exciton character of 4T-V(CN)₂ in contrast to the unsubstituted quaterthiophene 4T. Finally, a third-order nonlinear susceptibility χ⁽³⁾ (−ω; ω, 0, 0) of 16 × 10⁻¹² e.s.u. is obtained.     

DC conductivity of silver vanadium tellurite glasses

The mixed electronic-ionic conduction in 0.5[xAg₂O-(1−x)V₂O₅]-0.5TeO₂ glasses with x=0.1-0.8 has been investigated over a wide temperature range (70-425 K). The mechanism of dc conductivity changes from predominantly electronic to ionic within the 30?mol% Ag₂O?40 range; it is correlated with the underlying change in glass structure. The temperature dependence of electronic conductivity has been analyzed quantitatively to determine the applicability of various models of conduction in amorphous semiconducting glasses. At high temperature, T>θ_D/2 (where θ_D is the Debye temperature) the electronic dc conductivity is due to non-adiabatic small polaron hopping of electrons for 0.1?x?0.5. The density of states at Fermi level is estimated to be N(E_F)≈10¹⁹-10²⁰ eV⁻¹ cm⁻³. The carrier density is of the order of 10¹⁹ cm⁻³, with mobility ≈2.3×10⁻⁷-8.6×10⁻⁹ cm² V⁻¹ s⁻¹ at 300 K. The electronic dc conductivity within the whole range of temperature is best described in terms of Triberis-Friedman percolation model. For 0.6?x?0.8, the predominantly ionic dc conductivity is described well by the Anderson-Stuart model.     

Influence of cetyltrimethylammonium bromide on the morphology of AWO4 (A = Ca, Sr) prepared by cyclic microwave irradiation

AWO₄ (A = Ca, Sr) was prepared from metal salts [Ca(NO₃)₂·4H₂O or Sr(NO₃)₂], Na₂WO₄·2H₂O and different moles of cetyltrimethylammonium bromide (CTAB) in water by cyclic microwave irradiation. The structure of AWO₄ was characterized by X-ray diffraction (XRD) and selected area electron diffraction (SAED). Transmission electron microscopy (TEM) and scanning electron microscopy (SEM) revealed the presence of nanoparticles in clusters with different morphologies; spheres, peaches with notches, dumb-bells and bundles, influenced by CTAB. Six Raman vibrational peaks of scheelite structure were detected at 908, 835, 793, 399, 332 and 210 cm⁻¹ for CaWO₄ and 917, 833, 795, 372, 336 and 192 cm⁻¹ for SrWO₄, which are assigned as ν₁(A_g), ν₃(B_g), ν₃(E_g), ν₄(B_g), ν₂(A_g) and ν_f.r.(A_g), respectively. Fourier transform infrared (FTIR) spectra provided the evidence of W-O stretching vibration in [WO₄]²⁻ tetrahedrons at 793 cm⁻¹ for CaWO₄ and 807 cm⁻¹ for SrWO₄. The peaks of photoluminescence (PL) spectra were at 428-434 nm for CaWO₄, and 447-451 nm for SrWO₄.     

Influence of mobile space charges on electrical properties of ferroelectric Bi3.5La0.5Ti3O12 thin films

Lanthanum-substituted bismuth titanate, Bi_3.5La_0.5Ti₃O₁₂ (i.e., x=0.5 in Bi_4−xLa_xTi₃O₁₂), thin films have been grown on Pt/Ti/SiO₂/Si substrates using pulsed laser deposition. The frequency dependence of the real part ε′(ω) and the imaginary part ε″(ω) of the dielectric constant has been studied. The ε′(ω) does not show any sudden change within the frequency range of 10²-10⁶ Hz. In contrast, the ε″(ω) shows a large dispersion as frequency decreases. The observed relaxation behavior in ε″(ω) can be explained in terms of a migration of oxygen vacancies in (Bi₂O₂)²⁺ layers, not in Bi₂Ti₃O₁₀ perovskite layers.     

Structure, magnetic and optical properties of polycrystalline Co-doped TiO2 films

Co-doped TiO₂ films were fabricated under different conditions using reactive facing-target magnetron sputtering. Co doping improves the transformation of TiO₂ from anatase phase to rutile phase. The chemical valence of doped Co in the films is +2. All the films are ferromagnetic with a Curie temperature above 340 K. The average room-temperature moment per Co of the Co-doped TiO₂ films fabricated at 1.86 Pa decreases from 0.74 μ_B at x=0.03 to 0.02 μ_B at x=0.312, and decreases from 0.54 to 0.04 μ_B as x increases from 0.026 to 0.169 for the Co-doped TiO₂ films fabricated at 0.27 Pa. The ferromagnetism originates from the oxygen vacancies created by Co²⁺ dopants at Ti⁴⁺ cations. The optical band gaps value (E_g) of the Co-doped TiO₂ films fabricated at 1.86 Pa decreases linearly from 3.35 to 2.62 eV with the increasing x from 0 to 0.312. For the Co-doped TiO₂ films fabricated at 1.86 Pa, the E_g decreases linearly from 3.26 to 2.53 eV with increasing x from 0 to 0.350.     

Investigation of energy band gap and optical properties of cubic CdS epilayers

High quality cubic CdS epilayers were grown on GaAs (1 0 0) substrates by the hot-wall epitaxy method. The crystal structure of the grown epilayers was confirmed to be the cubic structure by X-ray diffraction patterns. The optical properties of the epilayers were investigated in a wide photon energy range between 2.0 and 8.5 eV using spectroscopic ellipsometry (SE) and were studied in the transmittance spectra at a wavelength range of 400-700 nm at room temperature. The data obtained by SE were analyzed to find the critical points of the pseudodielectric function spectra, 〈?(E)〉 = 〈?₁(E)〉 + i〈?₂(E)〉, such as E₀, E₁, E₂, E^′₀, and E^′₁ structures. In addition, the optical properties related to the pseudodielectric function of CdS, such as the absorption coefficient α(E), were investigated. All the critical point structures were observed, for the first time, at 300 K by ellipsometric measurements for the cubic CdS epilayers. Also, the energy band gap was determined by the transmittance spectra of the free-standing film, and the results were compared with the E₀ structure obtained by SE measurement.     

Switching phenomenon and optical properties of Se85Te10Bi5 films

Se₈₅Te₁₀Bi₅ films of different thicknesses ranging from 126 to 512 nm have been prepared. Energy-dispersive X-ray (EDX) spectroscopy technique showed that films are nearly stoichiometric. X-ray diffraction (XRD) measurements have showed that the Se₈₅Te₁₀Bi₅ films were amorphous. Electrical conduction activation energy (ΔE_σ) for the obtained films is found to be 0.662 eV independent of thickness in the investigated range. Investigation of the current voltage (I-V) characteristics in amorphous Se₈₅Te₁₀Bi₅ films reveals that it is typical for a memory switch. The switching voltage V_th increases with the increase of the thickness and decreases exponentially with temperature in the range from 298 to 383 K. The switching voltage activation energy (ε) calculated from the temperature dependence of V_th is found to be 0.325 eV. The switching phenomenon in amorphous Se₈₅Te₁₀Bi₅ films is explained according to an electrothermal model for the switching process. The optical constants, the refractive index (n) and the absorption index (k) have been determined from transmittance (T) and reflectance (R) of Se₈₅Te₁₀Bi₅ films. Allowed non-direct transitions with an optical energy gap (E_g^opt) of 1.33 eV have been obtained. ΔE_σ is almost half the obtained value of E_g^opt, which suggested band to band conduction as indicated by Davis and Mott.     

Emission analysis of Dy and Pr:Bi2O3-ZnF2-B2O3-Li2O-Na2O glasses

In this paper, we present the spectral results of Dy³⁺ and Pr³⁺ (1.0 mol%) ions doped Bi₂O₃-ZnF₂-B₂O₃-Li₂O-Na₂O glasses. Measurements of X-ray diffraction (XRD), differential scanning calorimetry (DSC) profiles of these rare-earth ions doped glasses have been carried out. From the DSC thermograms, glass transition (T_g), crystallization (T_c) and melting (T_m) temperatures have been evaluated. The direct and indirect optical band gaps have been calculated based on the glasses UV absorption spectra. The emission spectrum of Dy³⁺:glass has shown two emission transitions ⁴F_7/2→⁶H_15/2 (482 nm) and ⁴F_7/2→⁶H_13/2 (576 nm) with an excitation at 390 nm wavelength and Pr³⁺:glass has shown a strong emission transition ¹D₂→³H₄ (610 nm) with an excitation at 445 nm. Upon exposure to UV radiation, Dy³⁺ and Pr³⁺ glasses have shown bright yellow and reddish colors, respectively, from their surfaces.     

The ground state and EPR spectrum in monoclinic KY(WO4)2:Nd single crystal

The electron paramagnetic resonance (EPR) of Nd³⁺ ion in KY(WO₄)₂ single crystal was investigated at T=4.2 K using an X-band spectrometer. The observed resonance absorption represents the complex superposition of three spectra corresponding to neodymium isotopes with different nuclear momenta. The EPR spectrum is characterized by a strong g-factor anisotropy. The temperature dependences of the g-factor were caused by strong spin-orbit and orbit-lattice coupling. The resonance lines become broader as temperature increases due to the short spin-lattice relaxation time.     

Detection of collective motions in dielectric spectra and the meaning of the generalized Vogel-Fulcher-Tamman equation

Based on the reduction property of dielectric spectra associated with the power-law function [∼(jωτ)^±ν] that appears in the frequency domain, one can develop an effective procedure for detection of different reduced motions (described by the corresponding power-law exponents) in temperature domain. If the power-law exponent ν is related to characteristic relaxation time τ by the relationship ν=ν₀ ln(τ/τ_s)/ln(τ/τ₀) (here τ_s, τ₀ are the characteristic times characterizing a movement over fractal cluster that is defined in Ref. [Ya.E. Ryabov, Yu. Feldman, J. Chem. Phys. 116 (2002) 8610]) and the simple temperature dependence of τ(T)=τ_A exp(E/T) obeys the traditional Arrhenius relationship, then one can prove that any extreme point figuring in the complex permittivity ε(jω) spectra (characterized by the values [ω_m, y(ω_m)]) obeys the generalized Vogel-Fulcher-Tamman (VFT) equation. This important statement confirms the existence of the ‘universal’ response (UR) (discovered and classified by Jonscher in frequency domain) and opens new possibilities in the detection of the ‘hidden’ collective motions in temperature region for self-similar (heterogeneous) systems. It gives also the extended interpretation of the VFT equation and allows one to differentiate collective motions passing through an extreme point. This differentiation, in turn, allows one to select the proper fitting function containing one or two (at least) relaxation times for the fitting of the complex permittivity function ε(jω) in the limited frequency domain. This conclusion can allow for the classification of dielectric spectroscopy as the spectroscopy of the reduced (collective) motions, which are described by different power-law exponents on the mesoscale region. The verification of this approach on available DS data (poly(ethylene glycol)-based-single-ion conductors) completely confirms the basic statements of this theory and opens new possibilities in general classification of different motions that can be detected in the analysis of the different dielectric permittivity spectra.     

Structural optimization of HfTiSiO high-k gate dielectrics by utilizing in-situ PVD-based fabrication method

We investigated the optimum structure for Ti-containing Hf-based high-k gate dielectrics to achieve EOT scaling below 1 nm. TiO₂/HfSiO/SiO₂ trilayer and HfTiSiO/SiO₂ bilayer structures were fabricated by a newly developed in-situ PVD-based method. We found that thermal diffusion of Ti atoms to SiO₂ underlayers degrades the EOT-J_g characteristics. Our results clearly demonstrated the impact of the trilayered structure with TiO₂ capping for improving EOT-J_g characteristics of the gate stack. We achieved an EOT scaling of 0.78 nm as well as reduced gate leakage of 7.2 × 10⁻² A/cm² for a TiO₂/HfSiO/SiO₂ trilayered high-k dielectric while maintaining the electrical properties at the bottom interface.     

Magnetic anomalies in single crystalline ErPd2Si2

Considering certain interesting features in the previously reported ¹⁶⁶Er Mössbauer effect, and neutron diffraction data on the polycrystalline form of ErPd₂Si₂ crystallizing in the ThCr₂Si₂-type tetragonal structure, we have carried out magnetic measurements (1.8–300 K) on the single crystalline form of this compound. We observe significant anisotropy in the absolute values of magnetization (indicating that the easy axis is c-axis) as well as in features due to magnetic ordering in the plot of magnetic susceptibility χ versus temperature T at low temperatures. The χ(T) data reveal that there is a pseudo-low-dimensional magnetic order setting in at 4.8 K, with a three-dimensional antiferromagnetic order setting in at a lower temperature (3.8 K). A new finding in the χ(T) data is that, for H∥〈1 1 0〉 but not for H∥〈0 0 1〉, there is a broad shoulder in the range 8–20 K, indicative of the existence of magnetic correlations above 5 K as well, which could be related to the previously reported slow-relaxation-dominated Mössbauer spectra. Interestingly, the temperature coefficient of electrical resistivity is found to be isotropic; no feature due to magnetic ordering could be detected in the electrical resistivity data at low temperatures, which is attributed to magnetic Brillioun-zone boundary gap effects. The results reveal the complex nature of magnetism of this compound.     

Relaxor behavior of (Ba,Sr)(Zr,Ti)O3 ferroelectric ceramics

We examine the ferroelectric-relaxor behavior of (Ba_0.65Sr_0.35)(Zr_0.35Ti_0.65)O₃ (BSZT) ceramics in the temperature range from 80 to 380 K. A broad dielectric maximum, which shifts to higher temperature with increasing frequency, signifies the relaxor-type behavior of these ceramics. The value of the relaxation parameter γ∼2 estimated from the linear fit of the modified Curie-Weiss law, indicates the relaxor nature of the BSZT ceramics. The dielectric relaxation rate follows the Vogel-Fulcher relation with T_VF=107 K, E_a=0.121 eV, and ν₀=6.83×10¹⁴ Hz, further supports such relaxor nature. The slim P-E hysteresis loop and ‘butterfly’ shape dc bias field dependence of permittivity at T>T_m (T_m, the temperature of permittivity maximum) clearly signifies the occurrence of nanopolar clusters, which is the typical characteristic of ferroelectric relaxor. At 300 K and 10 kHz, the dielectric constant and loss tan δ are ∼1100 and 0.0015, respectively. The high tunability (∼25%) and figure of merit (∼130) at room temperature show that the BSZT ceramics could be a promising candidate for tunable capacitor applications.     

Very high field magnetization and AC susceptibility of native horse spleen ferritin

The magnetization of native horse spleen ferritin protein is measured in pulsed magnetic fields to 55 T at T=1.52 K. The magnetization rises smoothly with negative curvature due to uncompensated Fe³⁺ spins and with a large high field slope due to the underlying antiferromagnetic ferritin core. Even at highest fields the magnetic moment is only ∼4% of the saturation moment of the full complement of Fe³⁺ in the ferritin molecule. The AC magnetic susceptibility, χ_AC(T,f), responding to the uncompensated spins, reaches a maximum near the superparamagnetic blocking temperature with the temperature of the maximum, T_M, varying with excitation frequency, T_M⁻¹ α log f for 10?f?10⁴ Hz.     

Crystal structure,NMR study,dielectric relaxation and AC conductivity of a new compound [Cd3(SCN)2Br6(C2H9N2)2]n

The crystal structure, the ¹³C NMR spectroscopy and the complex impedance have been carried out on [Cd₃(SCN)₂Br₆(C₂H₉N₂)₂]_n. Crystal structure shows a 2D polymeric network built up of two crystallographically independent cadmium atoms with two different octahedral coordinations. This compound exhibits a phase transition at (T=355±2 K) which has been characterized by differential scanning calorimetry (DSC), X-rays powder diffraction, AC conductivity and dielectric measurements. Examination of ¹³C CP/MAS line shapes shows indirect spin–spin coupling (¹⁴N and ¹³C) with a dipolar coupling constant of 1339 Hz. The AC conductivity of this compound has been carried out in the temperature range 325–376 K and the frequency range from 10⁻² Hz to 10 MHz. The impedance data were well fitted to two equivalent electrical circuits. The results of the modulus study reveal the presence of two distinct relaxation processes. One, at low frequency side, is thermally activated due to the ionic conduction of the crystal and the other, at higher frequency side, gradually disappears when temperature reaches 355 K which is attributed to the localized dipoles in the crystal. Moreover, the temperature dependence of DC-conductivity in both phases follows the Arrhenius law and the frequency dependence of σ(ω,T) follows Jonscher's universal law. The near values of activation energies obtained from the conductivity data and impedance confirm that the transport is through the ion hopping mechanism.     

Heat capacity and low-frequency vibrational density of states. Inferences for the boson peak of silica and alkali silicate glasses

A simple method is used to determine in an absolute way the low-frequency part of the vibrational density of states, g(ω), from inversion of low-temperature heat capacities of glasses. Calculations have been made from adiabatic measurements performed from 10 to 300 K for vitreous SiO₂ and a series of Li, Na and K silicate glasses with up to 50 mol% metal oxide. In all cases, the calculated low-frequency feature is made up of two bands whose maxima lie between 100 and 140 cm⁻¹ and near 400 cm⁻¹. Both the frequency and intensity of the first peak of g(ω) increase linearly with metal oxide content from pure SiO₂ to the metasilicate stoichiometry, reflecting weaker bonding with nonbridging oxygens in the order Li, Na, K, i.e., in order of increasing cationic radius and mass. As represented by the peaks found below 50 cm⁻¹ in plots of g(ω)/ω² vs. ω and below 20 K in plots of C_p/T³ vs. T, the boson peak varies in a different way with composition. Its intensity increases with increasing polymerization for Li and Na silicates whereas the converse holds true for K silicates. These variations agree with the enhancement of the contribution of floppy modes and transverse acoustic modes to the low-frequency vibrational density of states that has previously been reported, but they also point to the importance of localized vibrations in which network modifier cations participate. For either the first peak of g(ω) or the boson peak, however, the size of the alkali cation exerts a stronger influence than the degree of polymerization of the anionic framework. Finally, the universal phenomenology of the boson peak is borne out by the collapse of the calorimetric data on a single master curve when one plots the measurements in a reduced form by using the intensity and position of the peaks as scaling parameters.     

Laser synthesis of semiconductor nanostructures with narrow band gap

Semiconductor nanostructures with narrow band gap were synthesized by means of laser chemical vapor deposition (LCVD) of elements from iron carbonyl vapors [Fe(CO)₅] under the action of Ar⁺ laser radiation (λ_L = 488 nm) on the Si substrate surface. The temperature dependence of the specific conductivity of these nanostructures in the form of thin films demonstrated typical semiconductor tendency and gave the possibility to calculate the band gap for intrinsic conductivity (E_g) and the band gap assigned for impurities (E_i), which were depended upon film thickness and applied electrical field. Analysis of deposited films with scanning electron microscopy (SEM) and atomic force microscopy (AFM) demonstrated their cluster structure with average size not more than 100 nm. Semiconductor properties of deposited nanostructures were stipulated with iron oxides in different oxidized phases according to X-ray photoelectron spectroscopy (XPS) analysis.These deposited nanostructures were irradiated with Q-switched YAG laser (λ_L = 1064 nm) at power density about 6 × 10⁷ W/cm². This irradiation resulted in the crystallization process of deposited films on the Si substrate surface. The crystallization process resulted in the synthesis of iron carbide-silicide (FeSi_2−xC_x) layer with semiconductor properties too. The width of the band gap E_g of the synthesized layer of iron carbide-silicide was less than for deposited films based on iron oxides Fe₂O_3−x (0 ≤ x ≤ 1).