High Efficiency Red Organic Light-Emitting Diodes Based on Microcavity Structure

We demonstrate high efficiency red organic light-emitting diodes （OLEDs） based on a planar microcavity comprised of a dielectric mirror and a metal mirror. The microcavity devices emitted red light at a peak wavelength of 610nm with a full width at half maximum （FWHM） of 25nm in the forward direction, and an enhancement of about 1.3 factor in electroluminescent （EL） efficiency has been experimentally achieved with respect to the conventional noncavity devices. For microcavity devices with the structure of distributed Bragg reflectors （DBR ） /indium-tin-oxide（ITO） /V2O5 /N2N′-di（naphthalene-1-yl）-N2N′-diphenyl-benzidine（NPB ） / 4-（dicy-anomethylene）-2-t-butyl-6（1,1,7,7-tetrame-thyljulolidyl-9-enyl）-4H-pyran（DCJTB）：tris（8-hydroxyquinoline） aluminium （Alq3）/Alq3/LiF/Al, the maximum brightness arrived at 37000cd/m^2 at a current density of 460.0mA/cm^2, and the current efficiency and power efficiency reach 13.7cd/A at a current density of 0.23 mA/cm^2 and 13.31m/W at a current density of 0.04 mA/cm^2, respectively.     

Effect of Emitter Position on Emission Intensity in an Organic Planar Microcavity

We have fabricated a λ/2-length planar microcavity between two silver mirrors that had the same thickness and consisted of a sandwich structure LiF1/Alq3/LiF2.By altering the relative thickness of the two LiF layers,the adjustment of the position of thin layer Alq3 in the microcavity was achieved and the apparent photoluminescence (PL) intensity change was observed.The maximal emission intensity device,corresponding to the luminescence layer located at antinode,is four times that of the minimal one whose luminescence layer is near a silver mirror that is close to a node.This indicates that the coupling between vacuum electric field and dipole strongly affects the emission intensity in the forward direction of the microcavity plane.Comparing the PL intensity between the microcavity and the non-cavity devices with the same sandwith structure LiF1/Alq3/LiF2 in free space,at the resonance wavelength a maximal enhancement factor of nine is obtained.     

Blue-Green Light Emission from a-SiCx：H-Based Fabry-Perot Microcavities

A Si-based novel Fabry-Perot microcavity device that can emit blue-green light at room temperature is proposed and fabricated, One of its Bragg reflectors consists of periodically stacked a-SiO2/a-Si：H layers deposited on the glass by plasma enhanced chemical vapour deposition, The other reflector is a sputtered Al film, The active region between both the reflectors is constructed by a p-type a-SiCx：H/intrinsic-type a-SiCx ：H junction fromwhich the electroluminescence （EL） is originated. The EL spectra of this device are recorded by RENISHAW RM2000, a sharp and strong EL peak at 483nm with FWHM of 20nm is observed when the device is driven by dc voltages of 8 V, 12 V and 18 V at room temperature. The intensity of EL increases with the applied voltage while the luminescence wavelength keeps unchanged. Compared with the EL spectra from the sample without the Bragg reflector, the luminescence intensity is about 10 times enhanced and the peak is narrowed greatly. The luminescence mechanism is analysed in detail.     

Modified Photoluminescence by Silicon-Based One-Dimensional Photonic Crystal Microcavities

photoluminescence (PL) lrom one-dimensional photonic band structures is investigated. The doped photonic crystal with microcavitles are fabricated by using alternating hydrogenated amorphous silicon nitride (a-SiNx:H/a-SiNy:H) layers in a plasma enhanced chemical vapour deposition (PECVD) chamber. It is observed that microcavities strongly modify the PL spectra from active hydrogenated amorphous silicon nitride (a-SiNx:H) thin film. By comparison, the wide emission band width 208nm is strongly narrowed to 11 nm, and the resonant enhancement of the peak PL intensity is about two orders of magnitude with respect to the emission of the λ/2-thick layer of a-SiNx:H. A linewidth of Δλ=11 nm and a quality factor of Q=69 are achieved in our one-dimensional a-SiNz photonic crystal microcavities. Measurements of transmittance spectra of the as-grown samples show that the transmittance resonant peak of a cavity mode at 710nm is introduced into the band gap of one-dimensional photonic crystal distributed Bragg reflector (DBR), which further verifies the microcavity effects.     

Intracavity frequency-doubled green vertical external cavity surface emitting laser

An intracavity frequency-doubled vertical external cavity surface emitting laser (VECSEL) with green light is demonstrated. The fundamental frequency laser cavity consists of a distributed Bragg reflector (DBR) of the gain chip and an external mirror. A 12-mW frequency-doubled output has been reached at 540 nm with a nonlinear crystal LBO when the fundamental frequency output is 44 mW at 1080 nm. The frequency doubling efficiency is about 30%.     

Intracavity frequency-doubled green vertical external cavity surface emitting laser

An intracavity frequency-doubled vertical external cavity surface emitting laser(VECSEL)with green light is demonstrated.The fundamental frequency laser cavity consists of a distributed Bragg reflector (DBR)of the gain chip and an external mirror.A 12-mW frequency-doubled output has been reached at 540 nm with a nonlinear crystal LBO when the fundamental frequency output is 44 mW at 1080 nm.The frequency doubling efficiency is about 30%.     

Dynamic Behaviour of Self-Diffraction in Bacteriorhodopsin Film

We investigate the dependences of the diffraction efficiency of the first order self-diffracted beam in bacteriorhodopsin (bR) films on the illumination time, the intensity and wavelength of the incident light. When the blue light (λ = 488 nm) and low intensity red light (λ = 632.8 nm) are incident on the bR film respectively,the diffraction efficiencies increase from zero to a stable value with the illumination time. When the green light (λ = 533 nm) and high-intensity red light illuminate the bR film respectively, the diffraction efficiencies increase from zero to the maximum and then decrease to a stable value with the illumination time. Rise and decay times are dependent on the intensity and wavelength of the incident light. The maximal diffraction efficiency of the red light is twice as high as that of the green light. The highest diffraction efficiency of 5.4% is obtained at 633nm.The diffraction efficiency change with the time for the green light is larger than that for the blue and red light.     

Visible Upconversion Emission in Er3＋—Doped GeO2—PbO—PbF2 Glass

The upconversion fluorescence emission of Er3 -doped 60GeO2-2OPbO-2OPbF2 glass was experimentally investigated under the pump of 976-nm laser diode. The results reveal the existence of intense emission bands centred around 524, 545, and 657nm at room temperature. The green emission at 524 and 545nm is due to the 4S3/2 2 Hll/2→ 4I15/2 transition and the red emission of 657nm originates from the 4F9/2-→4I15/2 transition of Er3 . The quadratic dependence of the green and red emissions on excitation power indicates that a two-photonabsorption process occurs under the 976-nm excitation. The excited- state absorption from 4I ll/2 and the cross relaxation between two Er3 ions in the 4I ll/2 state contribute to the green emission. The red emission at 657nm is attributed to the excited-state absorption and cross relaxation processes in the 4I13/2 level as well as the 4S3/2 level nonradiative transition of Er3 .     

Design and numerical simulation of novel DBRs

In this paper, a numerical simulation of the traditional graded distributed Bragg reflector (DBR) and a design of the novel DBR with short period superlattices (SPSs DBR) used by vertical cavity surface emitting laser (VCSEL) are reported. First, the optical characteristic matrix of the graded DBRs is derived using the theories of thin film optics. Second, its reflective spectrum is numerical simulated and it is found that the simulative results are similar with the experimental data. The difference of the cavity mode position between the experimental and simulative data is discussed. Finally, based on the simulative results of graded DBR, a novel DBR with 4.5-pair GaAs/AlAs SPSs is designed, and its reflective spectrum is numerical simulated and analyzed.     

Fabrication and optical properties of InGaN/GaN multiple quantum well light emitting diodes with amorphous BaTiO3 ferroelectric film

BaTiO3 （BTO） ferroelectric thin films are prepared by the sol,el method. The fabrication and the optical properties of an InGaN/GaN multiple quantum well light emitting diode （LED） with amorphous BTO ferroelectric thin film are studied. The photolumineseence （PL） of the BTO ferroelectric film is attributed to the structure. The ferroeleetric film which annealed at 673 K for 8 h has the better PL property. The peak width is about 30 nm from 580 nm to 610 nm, towards the yellow region. The mixed electroluminescence （EL） spectrum of InGaN/GaN multiple quantum well LED with 150-nm thick amorphous BTO ferroelectric thin film displays the blue-white light. The Commission Internationale De L＇Eclairage （CIE） coordinate of EL is （0.2139, 0.1627）. EL wavelength and intensity depends on the composition, microstructure and thickness of the ferroelectric thin film. The transmittance of amorphous BTO thin film is about 93% at a wavelength of 450 nm-470 nm. This means the amorphous ferroelectrie thin films can output more blue-ray and emission lights. In addition, the amorphous ferroelectric thin films can be directly fabricated without a binder and used at higher temperatures （200 ℃-400 ℃）. It is very favourable to simplify the preparation process and reduce the heat dissipation requirements of an LED. This provides a new way to study LEDs.     

Design and Fabrication of Chirped Mirror

Chirped mirrors （CMs） are designed and manufactured. The optimized CM provides a group delay dispersion （ODD） of around -60fs^2 and average reflectivity of 99.4% with bandwidth 200 nm at a central wavelength of 800nm. The CM structure consists of 52 layers of alternating high refractive index Ta2O5 and low refractive index SiO2. Measurement results show that the control of CM manufacturing accuracy can meet our requirement through time control with ion beam sputtering. Because the ODD of CMs is highly sensitive to small discrepancies between the layer thickness of calculated design and those of the manufactured mirror, we analyze the error sources which result in thickness errors and refractive index inhomogeneities in film manufacture.     

Structural and Upconversion Fluorescence Properties of Er^3＋／Yb^3＋-Codoped Lead-Free Germanium-Bismuth Glass

We study the structural and infrared-to-visible upconversion fluorescence properties of Er^3 /yb^3 -codoped leadfree germanium-bismuth glass. The structure of lead-free germanium-bismuth-lanthanum glass is investigated by peak-deconvolution of F~aman spectroscopy. Intense green and red emissions centred at 525, 546, and 657nm,corresponding to the transitions ^2H11/2 → 4I15/2, ^4S3/2 → 4I15/2, and 4F9/2 → 4I15/2, respectively, are observed at room temperature. The quadratic dependence of the 525, 546, and 657nm emissions on excitation power indicates that a two-photon absorption process occurs under 975nm excitation.     

Green and red up-conversion emissions and thermometric application of Er^3＋-doped silicate glass

The green and red up-conversion emissions centred at about 534, 549 and 663 nm of wavelength, corresponding respectively to the ^2H11/2 → ^4I15/2, ^4S3/2 → ^4I15/2 and ^4F9/2 → ^4I15/2 transitions of Er^3＋ ions, have been observed for the Er^3＋-doped silicate glass excited by a 978 nm semiconductor laser beam. Excitation power dependent behaviour of the up-conversion emission intensity indicates that a two-photon absorption up-conversion process is responsible for the green and red up-conversion emissions. The temperature dependence of the green up-conversion emissions is also studied in a temperature range of 296-673 K, which shows that Er^3＋-doped silicate glass can be used as a sensor in high-temperature measurement.     

Temperature-insensitive refractive index sensor based on Mach–Zehnder interferometer with two microcavities

We propose a temperature-insensitive refractive index(RI) fiber sensor based on a Mach–Zehnder interferometer. The sensor with high sensitivity and a robust structure is fabricated by splicing a short photonic crystal fiber(PCF) between two single-mode fibers, where two microcavities are formed at both junctions because of the collapse of the PCF air holes. The microcavity with a larger equatorial dimension can excite higher-order cladding modes, so the sensor presents a high RI sensitivity, which can reach 244.16 nm/RIU in the RI range of1.333–1.3778. Meanwhile it has a low temperature sensitivity of 0.005 nm/°C in the range of 33°C–360°C.     

Upconversion fluorescence spectroscopy of Er~(3+)-doped lead oxyfluorosilicate glass

Upconversion fluorescence emission of Er3+-doped oxyfluorosilicate glass excited at 975 nm is experimentally investigated. The results reveal that the intense green and red emission, and weak blue emission centered at 525, 543, 655, and 410 nm, respectively. A two-photon upconversion process is assigned to the green and red emission while a three-photon process is responsible for blue upconversion. The possible upconversion mechanisms are discussed based on excited state absorption and energy transfer between excited Er3+ ions. The intense upconversion fluorescence of Er3+-doped lead oxyfluorosilicate glass may be a potentially useful material for developing upconversion optical devices.     

Highly efficient single longitudinal mode-pulsed green laser

A novel design for a highly efficient 1-kHz single-frequency green laser is proposed.An efficient singlefrequency laser pulse output at 532-nm wavelength may be obtained by combining the injection seeding with intracavity frequency doubling in a compact U-shaped cavity formed by two plano dichroic mirrors in an end-pumping arrangement.The laser is capable of producing green pulses with a total energy of 6.3 mJ at a pulse repetition rate of 1 kHz.The pulse width is about 10 ns and the optical-optical efficiency from the 808-nm pump source to the 532-nm green output is around 12.7%.     

Fabrication and optical properties of InGaN/GaN multiple quantum well light emitting diodes with amorphous BaTiO₃ ferroelectric film

BaTiO3(BTO) ferroelectric thin films are prepared by the sol-gel method.The fabrication and the optical properties of an InGaN/GaN multiple quantum well light emitting diode(LED) with amorphous BTO ferroelectric thin film are studied.The photoluminescence(PL) of the BTO ferroelectric film is attributed to the structure.The ferroelectric film which annealed at 673 K for 8 h has the better PL property.The peak width is about 30 nm from 580 nm to 610 nm,towards the yellow region.The mixed electroluminescence(EL) spectrum of InGaN/GaN multiple quantum well LED with 150-nm thick amorphous BTO ferroelectric thin film displays the blue-white light.The Commission Internationale De L’Eclairage(CIE) coordinate of EL is(0.2139,0.1627).EL wavelength and intensity depends on the composition,microstructure and thickness of the ferroelectric thin film.The transmittance of amorphous BTO thin film is about 93% at a wavelength of 450 nm-470 nm.This means the amorphous ferroelectric thin films can output more blue-ray and emission lights.In addition,the amorphous ferroelectric thin films can be directly fabricated without a binder and used at higher temperatures(200℃-400℃).It is very favourable to simplify the preparation process and reduce the heat dissipation requirements of an LED.This provides a new way to study LEDs.     

Upconversion properties of Er^3＋/Yb^3＋ co-doped TeO2-Nb2O5-Li2O glasses

The Er^3＋/Yb^3＋ co-doped TeO2-Nb2O5-Li2O glass is prepared by conventional melting method, and its upconversion spectra are measured. The intense green upconversion luminescence upon excitation with a 976 nm laser diode is observed with the naked eyes. The dependence of luminescence intensity on the ratio of Yb^3＋/Er^3＋ is discussed in detail, and the relationship between the ratio of green luminescence intensity to red luminescence intensity and the ratio of Yb^3＋/Er^3＋ is also studied, The luminescence intensity increases with the ratio of Yb^3＋/Er^3＋ increasing. The ratio of Yb^3＋/Er^3＋ plays a more important role than the concentration of Er^3＋ in determining the upconversion luminescence intensity. The ratio of green luminescence intensity to red luminescence intensity reaches a maximum when ratio of Yb^3＋/Er^3＋ is 3. Thus the glass could be one of the potential candidates for LD pumping solid-state lasers.     

Substrate Dependence of Properties of Sputtered ITO Films

High-quality indium-tin-oxide (ITO) films are deposited on p-type Czochralski silicon and 7059 Coming glass by direct-current magnetron sputtering at various temperatures. The structural, electrical and optical properties of the ITO films are investigated as functions of the substrate temperature. A comparison between the characteristics of the ITO films on silicon and Coming glass is presented. The results show that for the ITO film on silicon,the nucleation begins from room temperature; the resistivity reaches a maximum value at 75℃; the reflectivity increases with increasing temperature; when temperature is above 125℃, the ITO grows in a three-dimensional manner and forms a granular structure. However, for the ITO film on glass, it is still in an amorphous state at 75℃. Moreover, both the resistivity and the reflectivity decrease with increasing temperature. Above 125℃, the ITO grows in a two-dimensional manner and forms a domain structure.     

Design of Synthesized DBRs for Long-Wavelength InP-Based Vertical-Cavity Surface-Emitting Lasers

We report applications of a metallic film and a phase matching layer (PML) to increase the reflectivity of the cavity mirror in a long-wavelength InP-based vertical-cavity surface-emitting laser (VCSEL).The synthesis of the InGaAsP/InP distributed-Bragg reflector (DBR) with an Au film and the InP PML leads to the decrease of periods of the DBR multilayer stacks from 33 to 20 while keeping the reflectivity of the structure over 99%.The reflectivity over the whole forbidden band is significantly increased and become flatter compared to the bare DBR.The use of smaller DBR periods in a long wavelength VCSEL makes the epitaxial growth well controllable,decrease of the heat resistance,and decrease of the in-series electrical resistance of the devices. This can improve the reliability of the VCSEL growth and possibly cut down the cost of VCSEL devices.