Structure,transport and field-emission properties of compound nanotubes: CN<Subscript>x</Subscript> vs. BNC<Subscript>x</Subscript> (<Emphasis Type="Italic">x</Emphasis><0.1)

Transport and field-emission properties of as-synthesized CN_x and BNC_x (x<0.1) multi-walled nanotubes were compared in detail. Individual ropes made of these nanotubes and macrofilms of those were tested. Before measurements, the nanotubes were thoroughly characterized using high-resolution and energy-filtered electron microscopy, electron diffraction and electron-energy-loss spectroscopy. Individual ropes composed of dozens of CN_x nanotubes displayed well-defined metallic behavior and low resistivities of ∼10–100 kΩ or less at room temperature, whereas those made of BNC_x nanotubes exhibited semiconducting properties and high resistivities of ∼50–300 MΩ. Both types of ropes revealed good field-emission properties with emitting currents per rope reaching ∼4 μA(CN_x) and ∼2 μA (BNC_x), albeit the latter ropes se- verely deteriorated during the field emission. Macrofilms made of randomly oriented CN_x or BNC_x nanotubes displayed low and similar turn-on fields of ∼2–3 V/μm. 3 mA/cm² (BNC_x) and 5.5 mA/cm² (CN_x) current densities were reached at 5.5 V/μm macroscopic fields. At a current density of 0.2–0.4 mA/cm² both types of compound nanotubes exhibited equally good emission stability over tens of minutes; by contrast, on increasing the current density to 0.2–0.4 A/cm², only CN_x films continued to emit steadily, while the field emission from BNC_x nanotube films was prone to fast degradation within several tens of seconds, likely due to arcing and/or resistive heating. Received: 29 October 2002 / Accepted: 1 November 2002 / Published online: 10 March 2003 RID="*" ID="*"Corresponding author. Fax: +81-298/51-6280, E-mail: golberg.dmitri@nims.go.jp     

Electronic structure of defective lithium cobaltites Li<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>CoO<Subscript>2</Subscript>

X-ray absorption, resonant X-ray emission, and X-ray photoelectron spectroscopical methods have been applied for the study of the electronic structure of defective lithium cobaltites Li _x CoO₂ (0.6≤x≤1.0). Resonant O K α X-ray emission spectra of LiCoO₂ showed localized excitonic states due to a dd transition between occupied and unoccupied Co 3d states. On the base of measurements of Co 3s X-ray photoelectron, Co 2p, and O 1s X-ray absorption spectra, it was established that in defective cobaltites the electronic holes are localized mainly in O 2p states. An evidence of phase separation in Li _x CoO₂ has been found. It was shown that the semiconductor-to-metal transition in Li _x CoO₂ (x<0.76) at about 160 K is not accompanied by changes in the Co 3d electronic configuration which remains 3d ⁶.     

Modification of GaAs by medium-energy N<Stack><Subscript>2</Subscript><Superscript>+</Superscript></Stack> ions

The modification of GaAs with a 2500-eV beam containing N ₂ ⁺ and Ar⁺ ions is examined with Auger electron spectroscopy. Most implanted nitrogen atoms are found to react with the matrix, substituting arsenic atoms to produce a several-nanometer-thick layer of the single-phase GaAs_1−x N_x (x=6%) solid solution. The GaN phase is absent. Displaced arsenic atoms and nitrogen atoms unreacted with the matrix are present in the layer and on its surface. The former segregate, whereas the latter form molecules.     

Growth of Y-junction bamboo-shaped CNx nanotubes on GaAs substrate using single feedstock

Nitrogen-doped Y-junction bamboo-shaped carbon nanotubes were synthesized by chemical vapor deposition of monoethanolamine/ferrocene mixture on GaAs substrate at 950 °C. The use of monoethanolamine as the C/N feedstock simplifies the experimental arrangement by producing ammonia during the growth process. The structure, morphology and graphitization of as-grown nitrogen-doped carbon nanotubes (CN_x) were examined by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Raman spectroscopy analysis. TEM analysis indicates that nanotubes have a bamboo-like structure. The nitrogen concentration on as-grown CN_x nanotube was found to be 7.8 at.% by X-ray photoelectron spectroscopy (XPS) analysis. XPS analysis also indicated that there are two different types of nitrogen atoms (pyridinic and graphitic) in these materials. The possible growth mechanism of formation of Y-junction CN_x nanotubes was briefly discussed. Field emission measurement suggested that as-grown CN_x nanotubes are excellent emitters with turn-on and threshold fields of 1.6 and 2.63 V/μm, respectively. The result indicated that monoethanolamine proves to be an advantageous precursor to synthesize Y-junction nitrogen-doped carbon nanotubes and such nanotubes might be an effective material to fabricate various field emission devices.     

Electronic structure of thin film iron-tetracyanoethylene: Fe(TCNE)<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>

Thin film iron-tetracyanoethylene Fe(TCNE) _x , x∼2, as determined by photoelectron spectroscopy, was grown in situ under ultra-high vacuum conditions using a recently developed physical vapor deposition-based technique for fabrication of oxygen- and precursor-free organic-based molecular magnets. Photoelectron spectroscopy results show no spurious trace elements in the films, and the iron is of Fe²⁺ valency. The highest occupied molecular orbital of Fe(TCNE) _x is located at ∼1.7 eV vs. Fermi level and is derived mainly from the TCNE⁻ singly occupied molecular orbital according to photoelectron spectroscopy and resonant photoelectron spectroscopy results. The Fe(3d)-derived states appear at higher binding energy, ∼4.5 eV, which is in contrast to V(TCNE)₂ where the highest occupied molecular orbital is mainly derived from V(3d) states. Fitting ligand field multiplet and charge transfer multiplet calculations to the Fe L-edge near edge X-ray absorption fine structure spectrum yields a high-spin Fe²⁺ (3d⁶) configuration with a crystal field parameter 10Dq∼0.6 eV for the Fe(TCNE) _x system. We propose that the significantly weaker Fe-TCNE ligand interaction as compared to the room temperature magnet V(TCNE)₂ (10Dq∼2.3 eV) is a strongly contributing factor to the substantially lower magnetic ordering temperature (T _C ) seen for Fe(TCNE) _x -type magnets.     

Influence of the sample orientation in Sn<Subscript>2</Subscript>P<Subscript>2</Subscript>S<Subscript>6</Subscript> crystals on the hydrostatic piezoelectric coefficients

The influence of the sample orientation on the effective value of the hydrostatic piezoelectric coefficients d _h ⁽ⁱ⁾ of Sn₂P₂S₆ crystals has been studied. The hydrostatic piezoelectric coefficients d _h ⁽¹⁾ and d′ _h ⁽³⁾ , were measured, d _h ⁽¹⁾ =(244±3) pC/N and d′ _h ⁽³⁾ =(92±1) pC/N. The hydrostatic piezoelectric coefficient d _h ⁽³⁾ for orthogonal axis system was calculated to be d _h ⁽³⁾ =(87±2) pC/N. The, optimal orientation of the sample has been found as (Xy l)−20°-cut. Maximal value of the effective hydrostatic piezoelectric coefficient d _h ⁽¹⁾ equals 260 pC/N. Double rotated samples were also studied. The orientation of the samples insensitive to the pressure has been found. The theoretical mean value of hydrostatic piezoelectric coefficient (d _h ) _mean corresponding to randomly oriented Sn₂P₂S₆ grains in a poled composite has been calculated to be (d _h ) _mean =136 pC/N.     

N+BF<Subscript>2</Subscript> and N+C+BF<Subscript>2</Subscript> high-dose co-implantation in silicon

Nitrogen and boron BF₂, and nitrogen, carbon, and boron BF₂ high-dose (6×10¹⁶–3×10¹⁷ cm^-2) co-implantation were performed at energies of about 21–77 keV. Subsequent high-temperature annealing processes (600, 850, and 1200 °C) lead to the formation of three and two surface layers respectively. The outer layer mainly consists of polycrystalline silicon and some amorphous material and Si₃N₄ inclusions. The inner layer is highly defective crystalline silicon, with some inclusions of Si₃N₄ too. In the N+B-implanted sample the intermediate layer is amorphous. Co-implantation of boron with nitrogen and with nitrogen and carbon prevents the excessive diffusivity of B and leads to a lattice-parameter reduction of 0.7–1.0%. Received: 10 January 2002 / Accepted: 30 May 2002 / Published online: 4 November 2002 RID="*" ID="*"Corresponding author. Fax: +34-91/3974895; E-mail: Lucia.Barbadillo@uam.es     

Vibrational spectra of monoisotopic SiH<Subscript>4</Subscript> and GeH<Subscript>4</Subscript> in low-temperature matrices

IR absorption spectra of monoisotopic ²⁸SiH₄ and ⁷⁶GeH₄ are studied in Ar and N₂ matrices at 10 K. It is shown that the absorption spectra of silane and germane are similar in the regions of the stretching ν₃ and bending ν₄ vibrations. Four groups of bands can be separated out in the spectra of each molecule: (1) narrow bands characteristic of the matrix isolation studies, (2) broad bands, (3) diffuse absorption with a large value of the spectral moment M ₂^* the intensity of which increases upon annealing, and (4) bands of dimers the intensity of which increases quadratically with concentration. The spectra of ²⁸SiH₄ and ⁷⁶GeH₄ in nitrogen matrices contain a triplet in the stretching region and a doublet in the bending region, which is explained by the change in the molecular symmetry from T _d to C _3V on passage from the gas phase to solid nitrogen.     

Electrical properties of CN<Subscript>x</Subscript> nanotubes probed in a transmission electron microscope

Knowledge of the mechanical and electrical characteristics of one-dimensional nanostructures is critical for their future integration in nanoelectronic circuits. The present study analyses the behaviour of N-doped carbon nanotubes (CN_x,x<0.1) under applied stresses inside a transmission electron microscope. The electrical resistance changes observed were substantial, with figures ranging from 42 to 182 k Ω, and are largely correlated with the extension of the contact area (electrode–nanotube or nanotube–nanotube). Despite the repeated deformation cycles and high bending angles achieved, the nanotubes kept their metallic nature throughout. In addition to this, it was noticed that the CN_x nanotubes presented sections with several structural defects which acted as joints during their controlled bending. These areas represent high-resistive points which may lead to fatal structural failure, as demonstrated in the current induced failure experiments here reported. PACS 07.78.+s; 73.63.Fg; 73.63.-b     

Crystal and magnetic structure of CeVO<Subscript>3</Subscript>

The crystal structure and the magnetic ordering pattern of the electrically insulating perovskite CeVO₃ was investigated by high-resolution powder X-ray diffraction and single-crystal neutron diffraction. A structural phase transition from an orthorhombic to a monoclinic structure (with space groups Pbnm and P2₁/b, respectively) was observed upon cooling below T _s = 136 K. This transition is associated with a strong distortion of the VO₆-octahedra and can be attributed to orbital ordering. A magnetic ordering transition driven by exchange interactions between vanadium moments is observed at T _N = 124 K, and antiferromagnetic interactions between magnetic moments on vanadium and cerium ions induce a progressive magnetic polarization of the cerium sublattice at lower temperatures. The full magnetic structure is described by a superposition of the modes (C _x , F _y , −) and (F _x , C _y , −). The unit cell volume and the tilt angles of the VO₆-octahedra in the CeVO₃-crystal structure are anomalous compared to those of other members of the series RVO₃ (R = lanthanide atom), and the ordered magnetic moments on both vanadium and cerium sublattices at low temperatures are considerably smaller than the free-ion values of V³⁺ and Ce³⁺. Possible origins of this behavior are discussed.     

C<Subscript>60</Subscript> fullerene decoration of carbon nanotubes

A new fully carbon nanocomposite material is synthesized by the immersion of carbon nanotubes in a fullerene solution in carbon disulfide. The presence of a dense layer of fullerene molecules on the outer nanotube surface is demonstrated by TEM and XPS. Fullerenes are redistributed on the nanotube surface during a long-term action of an electron beam, which points to the existence of a molecular bond between a nanotube and fullerenes. Theoretical calculations show that the formation of a fullerene shell begins with the attachment of one C₆₀ molecule to a defect on the nanotube surface.     

Synthesis, characterization and low field emission of CNx nanotubes

Aligned CN_x nanotubes were fabricated by pyrolyzing ethylenediamine on p-type Si(1 1 1) substrates using iron as the catalyst. Scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectrum (XPS) and Raman spectroscopy were used to characterize the CN_x nanotubes. The CN_x nanotubes with the average length of 20 μm and diameters in the range of 50–100 nm have the “bamboo-like” structure and worse crystalline order. The low-field emission measurements of the CN_x nanotubes indicated that 20 μA/cm² current densities were observed at an electric field of 1.4 V/μm and 1.280 mA/cm² were obtained at 2.54 V/μm. The CN_x nanotubes exhibit better field emission properties than the carbon nanotubes and the BCN nanotubes. The emission mechanism of CN_x nanotubes is also discussed.     

Thermo-optic coefficients of monoclinic KLu(WO<Subscript>4</Subscript>)<Subscript>2</Subscript>

The three thermo-optic coefficients of the biaxial laser host KLu(WO₄)₂ are measured at 633 nm by a deflection method. Their values at 300 K amount to ∂ n _g /∂ T=−7.4×10⁻⁶ K⁻¹; ∂ n _m /∂ T=−1.6×10⁻⁶ K⁻¹ and ∂ n _p /∂ T=−10.8×10⁻⁶ K⁻¹. Nearly athermal propagation directions are found for polarizations along the N _m and N _p dielectric axes.     

脉冲偏压电弧离子镀CNx薄膜研究

用脉冲偏压电弧离子镀通过控制不同的氮流量在(100)单晶Si基片上制备了不同成分的CN_x薄膜.用光学显微镜,XPS,XRD,激光Raman和Nanoindenter等方法研究了薄膜的形貌、成分、结构和性能.结果表明,薄膜表面平整致密、氮含量随着氮流量的降低而降低、结构为非晶且为类金刚石薄膜;随着氮含量从18.9%降低到5.3%(摩尔百分比,全文同),薄膜的硬度和弹性模量单调增加而且增幅较大,其中硬度从15.0 GPa成倍增加到30.0 GPa;通过氮流量的调整能够敏感地改变薄膜中的sp³键的含量,是CN_x薄膜的硬度和弹性模量获得大幅度调整的本质原因. 关键词： x薄膜')" href="#">CN_x薄膜 脉冲偏压 电弧离子镀 硬度     

Synthesis of ZnAl<Subscript>2</Subscript>O<Subscript>4</Subscript>/α-Al<Subscript>2</Subscript>O<Subscript>3</Subscript> complex substrates and growth of GaN films

With the solid phase reaction between pulsed-laser-deposited (PLD) ZnO film and α-Al₂O₃ substrate, ZnAl₂O₄/α-Al₂O₃ complex substrates were synthesized. X-ray diffraction (XRD) spectra show that as the reaction proceeds, ZnAl₂O₄ changes from the initial (111)-oriented single crystal to poly-crystal, and then to inadequate (111) orientation. Corresponding scanning electron microscope (SEM) images indicate that the surface morphology of ZnAl₂O₄ transforms from uniform islands to stick structures, and then to bulgy-line structures. In addition, XRD spectra present that ZnAl₂O₄ prepared at low temperature is unstable at the environment of higher temperature. On the as-obtained ZnAl₂O₄/α-Al₂O₃ substrates, GaN films were grown without any nitride buffer using light-radiation heating low-pressure MOCVD (LRH-LP-MOCVD). XRD spectra indicate that GaN film on this kind of complex substrate changes fromc-axis single crystal to poly-crystal as ZnAl₂O₄ layer is thickened. For the single crystal GaN, its full width at half maximum (FWHM) of X-ray rocking curve is 0.4°. Results indicate that islands on thin ZnAl₂O₄ layer can promote nucleation at initial stage of GaN growth, which leads to the (0001)-oriented GaN film.     

Synthesis and characterization of electron beam evaporated LiCoO<Subscript>2</Subscript> thin films

LiCoO₂ thin films were prepared by electron beam evaporation technique using LiCoO₂ target with Li/Co ratio 1.1 in an oxygen partial pressure of 5 × 10⁻⁴ mbar. The films prepared at substrate temperature T _s < 573 K were amorphous in nature, and the films prepared at T _s > 573 K exhibited well defined (104), (101), and (003) peaks among which the (104) orientation predominates. The X-ray photoelectron spectroscopy (XPS) and inductively coupled plasma (ICP) data revealed that the films prepared in the substrate temperature range 673–773 K are nearly stoichiometric. The grain size increases with an increase of substrate temperature. The Co–e_g absorption bands, are empty and their peak position lies at around 1.7 eV above the top to the Co–t_2g bands. The fundamental absorption edge was observed at 2.32 eV. The films annealed at 1,023 K in a controlled oxygen environment exhibit (104) out plane texture with large grains. Paper presented at the Third International Conference on Ionic Devices (ICID 2006), Chennai, Tamilnadu, India, Dec. 7–9, 2006     

N-doping and coalescence of carbon nanotubes: synthesis and electronic properties

Self-assembly pyrolytic routes to large arrays (<2.5 cm²) of aligned CN_x nanotubes (15–80 nm OD and <100 μm in length) are presented. The method involves the thermolysis of ferrocene/melamine mixtures (5:95) at 900–1000 °C in the presence of Ar. Electron energy loss spectroscopy (EELS) reveals that the N content varies from 2–10%, and can be bonded to C in two different fashions (double-bonded and triple-bonded nitrogen). The electronic densities of states (DOS) of these CN_x nanotubes, using scanning tunneling spectroscopy (STS), are presented. The doped nanotubes exhibit strong features in the conduction band close to the Fermi level (0.18 eV). Using tight-binding and ab initio calculations, we confirm that pyridine-like (double-bonded) N is responsible for introducing donor states close to the Fermi Level. These electron-rich structures are the first example of n-type nanotubes. Finally, it will be shown that moderate electron irradiation at 700–800 °C is capable of coalescing single-walled nanotubes (SWNTs). The process has also been studied using tight-binding molecular dynamics (TBMD). Vacancies induce the coalescence via a zipper-like mechanism, which has also been observed experimentally. These vacancies trigger the organization of atoms on the tube lattices within adjacent tubes. These results pave the way to the fabrication of nanotube heterojunctions, robust composites, contacts, nanocircuits and strong 3D composites using N-doped tubes as well as SWNTs. Received: 10 October 2001 / Accepted: 3 December 2001 / Published online: 4 March 2002     

Investigation on structural characteristics of PVDF–AgCF<Subscript>3</Subscript>SO<Subscript>3</Subscript>–Al<Subscript>2</Subscript>O<Subscript>3</Subscript> nanocomposite solid polymer electrolyte system

There has been an increasing interest towards the incorporation of nanosize ceramic fillers in polymer electrolytes. Solid polymer electrolytes based on polyvinylidene fluoride (PVDF), silver triflate (AgCF₃SO₃), and x wt% of aluminum oxide (Al₂O₃) nanopowders (where x = 1, 3, 5, and 10, respectively) have been prepared using solution casting technique. The structural characteristics of these thin film specimens were studied using Fourier transform infrared (FTIR) and X-ray diffraction (XRD) patterns at room temperature. The appearance of new absorption bands and gradual shifts observed in some characteristic peaks confirmed the complex formation between polyvinylidene fluoride and silver triflate. Furthermore, the addition of nanosized filler Al₂O₃ has also indicated the interaction of the filler with the polymer salt complex. The XRD patterns obtained for all these samples in the 2θ range 10° to 70° showed the amorphous nature of these samples. Paper presented at the Third International Conference on Ionic Devices (ICID 2006), Chennai, Tamilnadu, India, December 7–9, 2006.     

Observation of multiple superconducting gaps in the infrared reflectivity spectra of Ba(Fe<Subscript>0.9</Subscript>Co<Subscript>0.1</Subscript>)<Subscript>2</Subscript>As<Subscript>2</Subscript>

The results of infrared reflectivity measurements for the iron-based high-temperature superconductor Ba(Fe_0.9Co_0.1)₂As₂ are reported. The reflectivity is found to be close to unity at frequencies ω lower than 2Δ/h (2Δ is the superconducting gap and h is Planck’s constant). This is evidence for the s ^+/− or s ^+/+ symmetry of the superconducting order parameter in the studied compound. The infrared reflectivity spectra of Ba(Fe_0.9Co_0.1)₂As₂ manifest opening of several superconducting gaps at temperatures lower than critical T _c .     

Thermal lensing study and athermal directions in flashlamp-pumped Nd:KGd(WO<Subscript>4</Subscript>)<Subscript>2</Subscript> laser crystal

Thermal lensing has been studied by a probe beam technique in flashlamp-pumped Nd:KGdW laser rods with rod axes positioned in the N _p–N _g plane and making different angles with the N _g optical indicatrix axis. It was found that the orientation of principal meridional planes of the astigmatic thermal lens in Nd:KGdW corresponds to the directions with maximum and minimum values of thermal-expansion coefficient in the plane perpendicular to the rod axis. The athermal Nd:KGdW laser crystal orientation defined as orientation with weak positive near spherical thermal lens has been determined to make an angle of 30^○–40^○ with the N _g axis for light polarization E∥N _m.