基于Arduino的便携式IRIG-B(DC)信号监视系统的设计与实现

为了提高对时间统一系统IRIG-B码信号的监测效率,需要一套自动监测系统;本文结合某型号时间统一系统,针对该时统设备输出的通用IRIG-B(DC)格式时间码,介绍了一种基于Arduino的便携式IRIG-B(DC)信号监视系统的设计过程,给出了以开放源代码硬件项目平台Arduino为核心构建的“输入控制+逻辑处理+数据处理+数据交互+数据存储+网络传输+实时显示”的系统硬件设计结构;利用Arduino内高度集成的AVR二次编译封装库,将复杂的逻辑控制和数据处理等底层的指令封装成简单实用的函数调用,完成了整个系统的任务调度和管理,实现了对时间统一系统IRIG-B(DC)信号的波形采集、数据分析、时间解调、状态监视、实时显示以及数据存储等功能;测试结果表明,系统设计简洁,工作稳定可靠,设计指标满足功能需求。     

基于FPGA的IRIG-B(DC)码解码卡的设计

为解决传统解码仪存在的体积大、兼容性差等问题,提出利用FPGA实现解调IRIG-B（DC）码信息的电路板卡的设计,该板卡能够解调出IRIG-B（DC）码的时间信息,根据此时间信息,解码卡可以输出相应的秒脉冲,并且通过RS232串口将解调出的时间信息传送给上位机。试验证明该解码卡具有环境适应性强、体积小、结构简明、应用范围广等特点,可以满足实际应用场所对IRIG-B码解码的要求。     

基于FPGA的IRIG-B编解码设计与实现

随着系统间时间同步要求的提高,IRIG-B码被越来越多的应用于系统间的时统模块中;针对传统的单片机及专用芯片实现方法已经不能满足产品的可靠性和可移植性的问题,对基于FPGA的IRIG-B编解码设计和实现方法进行了研究;提出了一种将BCD码和二进制码之间相互转换的迭代算法;结合FPGA设计方法对IRIG-B编码和解码方法进行了研究;通过对实验方法进行仿真,结果表明该方法能够正确有效的对时间信息进行IRIG-B格式的解码和编码,并且FPGA内部的实现形式可以大大减少外部芯片及电路的使用,从而大幅提升产品的可靠性和可移植性。     

基于双数字信号处理器(DSP)的实时相关图像处理系统的设计

以两片由TI公司生产的数字信号处理器TMS320C6203B为核心,用可编程逻辑阵列CPLD进行逻辑控制,采用现场可编程门阵列FPGA作图像的预处理和进行双数字信号处理器(DSP)之间的通讯,实现了实时相关的图像处理。此系统实时性好,可直接利用数字图像的灰度特征,在低信噪比的情况下目标跟踪点漂移小,目标跟踪能够较好地适应不同灰度分布的背景。     

基于数据采集卡和GPU的MRI信号接收设计

针对磁共振成像(Magnetic Resonance Imaging,MRI)的信号接收,提出一种基于高速数据采集卡和图形处理器(Graphic Processing Unit,GPU)的接收方法.采样每一行数据时,在谱仪输出触发脉冲的控制下,数据采集卡对前置放大器输出的信号进行直接采样.然后,使用GPU并行实现数字混频、多级滤波抽取和图像重建.GPU具有很高的运算速度,信号处理过程中可以根据需要灵活地实现滤波器的组合.同时,数据全部采用双精度浮点类型,保证了很高的运算精度,提高了重建图像的信噪比.MRI实验证明了该信号接收方法的可行性.     

基于DSP的实时图像处理系统的设计

在实时图像处理系统中,如何在有限的时间内完成大量信息数据的处理,满足系统的实时性要求一直是困扰着人们的一个难题。遵从系统模块化设计思想,提出了以TI公司的DSP(TMS320C6201)为核心器件的图像处理系统的设计方案,完成了相应的硬件电路设计,将图像实时处理要求较高的图像跟踪算法移植于所设计的图像处理系统中。试验结果表明,该实时图像处理系统功能和性能基本达到了预期要求,有一定的实用性。     

光时分复用(OTDM)系统中基于电吸收调制器(EAM)的短脉冲光源及解复用器的设计考虑

研究了电吸收调制器（ＥＡＭ） 的衰减随外加反向电压增加而指数增加的情形下,短脉冲光源的脉冲输出和解复用器的开关窗口对ＥＡＭ 的消光效率、反向ＤＣ 偏置电压以及正弦ＲＦ 驱动信号的幅度等参量的依赖关系－ 在基于ＥＡＭ 的短脉冲光源中,输出脉冲的消光比等于ＥＡＭ 消光效率η与正弦驱动电压峰峰值Ｖｐｐ 的乘积,输出光脉冲的消光比和脉宽均与ＥＡＭ 的反向偏置电压无关,但输出脉冲的峰值功率与η、Ｖｐｐ 和Ｖｂ 都有关系－ 在基于ＥＡＭ的解复用器中,为了使解复用器的开关窗口近似为矩形,可利用ＥＡＭ 的削波效应,使Ｖｐｐ／２＞ Ｖｂ－ 在ＥＡＭ 的消光效率η已知时,通过仔细设计反向ＤＣ 偏置电压Ｖｂ 和正弦驱动电压的峰峰值Ｖｐｐ ,达到ＯＴＤＭ 解复用器所需要的开关窗口形状、宽度和消光比－     

光时分复用(OTDM)系统中基于电吸收调制器(EAM)的短脉冲光源及解复用器的设计考虑

研究了电吸收调制器(EAM)的衰减随外加反向电压增加而指数增加的情形下,短脉冲光源的脉冲输出和解复用器的开关窗口对EAM的消光效率、反向DC偏置电压以及正弦RF驱动信号的幅度等参量的依赖关系.在基于EAM的短脉冲光源中,输出脉冲的消光比等于EAM消光效率η与正弦驱动电压峰峰值V_pp的乘积,输出光脉冲的消光比和脉宽均与EAM的反向偏置电压无关,但输出脉冲的峰值功率与η、V_pp和V_b都有关系.在基于EAM的解复用器中,为了使解复用器的开关窗口近似为矩形,可利用EAM的削波效应,使V_pp/2>V_b.在EAM的消光效率η已知时,通过仔细设计反向DC偏置电压V_b和正弦驱动电压的峰峰值V_pp,达到OTDM解复用器所需要的开关窗口形状、宽度和消光比.     

镍(Ⅱ)、锰(Ⅱ)、钴(Ⅱ)与诺氟沙星配合物的荧光特性研究

荧光分光光度法研究了镍(Ⅱ)、锰(Ⅱ)、钴(Ⅱ)与诺氟沙星配合物的荧光光谱特性.发现镍(Ⅱ)、锰(Ⅱ)、钴(Ⅱ)与诺氟沙星产生的配合物在pH 6.0的KH2PO4-K2HPO4的缓冲溶液中均使诺氟沙星的荧光猝灭.确认镍(Ⅱ)、锰(Ⅱ)、钴(Ⅱ)与诺氟沙星产生的配合物的组成分别为2 : 1、1:1、1:1.用锰与诺氟沙星配合物体系测定诺氟沙星滴眼液的含量,相对标准偏差为0.60%-1.1%,回收率为98.87%-102.7%,结果令人满意.     

计算流动显示技术(CFI)在自然对流流场测量中的应用

计算流动显示(CFI)技术通过利用仿真光测实验中光束的运动规律与光学干涉测量方法的数学模型,并根据计算流体动力学(CFD)的结果,获得仿真的光学干涉图像。本文通过计算机模拟数字散斑干涉中激光光束的运动规律得到了封闭方腔中空气自然对流的CFI光学图像,并将此仿真光学图像与实验得到的图像进行对比,指导实验的进行和自然对流中测试参数的计算。     

高k栅介质对肖特基源漏超薄体SOI MOSFET性能的影响

研究了高k栅介质对肖特基源漏超薄体SOI MOSFET性能的影响.随着栅介质介电常数增大,肖特基源漏(SBSD) SOI MOSFET的开态电流减小,这表明边缘感应势垒降低效应(FIBL)并不是对势垒产生影响的主要机理.源端附近边缘感应势垒屏蔽效应(FIBS)是SBSD SOI MOSFET开态电流减小的主要原因.同时还发现,源漏与栅是否对准,高k栅介质对器件性能的影响也不相同.如果源漏与栅交叠,高k栅介质与硅衬底之间加入过渡层可以有效地抑制FIBS效应.如果源漏偏离栅,采用高k侧墙并结合堆叠栅结构,可以提高驱动电流.分析结果表明,来自栅极的电力线在介电常数不同的材料界面发生两次折射.根据结构参数的不同可以调节电力线的疏密,从而达到改变势垒高度,调节驱动电流的目的. 关键词： k栅介质')" href="#">高k栅介质 肖特基源漏(SBSD) 边缘感应势垒屏蔽(FIBS) 绝缘衬底上的硅(SOI)     

FAAS法测定不同消化方法栽培桔梗中12种金属元素含量的研究

分别采用湿法、干法和先灰化再用硝酸-高氯酸(φ,4∶1)常压微沸条件下消解桔梗样品,用火焰原子吸收法测定栽培桔梗中的金属元素K,Mg,Ca,Cu,Zn,Mn,Fe,Co,Ni,Cd,Cr和Pb含量。研究了不同消化方法对测定栽培桔梗中的金属元素含量的影响以及测定不同元素的仪器最佳工作条件,并做了方法的准确度和精密度考察。结果表明,不同消化方法对测定Mg和Ca有显著影响,不同消化方法测定的栽培桔梗中K, Mg, Ca, Mn, Fe, Cu, Zn的平均含量分别为13 226.32, 922.57, 1 710.72, 9.23, 336.66, 8.75, 19.62 μg·g-1;Ni,Co,Cd,Cr和Pb未检出。方法的加标回收率为95.45%～105.50%, 相对标准偏差(n=9)为0.34%～5.78%。选择先灰化再用混酸消化测定栽培中药材金属元素含量,方法简单易行,结果令人满意。     

Analyzing the Effects of Topological Defect (TD) on the Energy Spectra and Thermal Properties of LiH,TiC and I2 Diatomic Molecules

In this study, the impacts of TD on the energy spectra and thermal properties of LiH, TiC and I₂ diatomic molecules is considered. The Schrodinger equation in cosmic string spacetime is solved with the generalized Morse potential using the well-known (NU) method. The energy spectra and eigenfunction are obtained respectively. The energy spectra is used to obtain the partition function which is then used to evaluate the thermal properties of the system is evaluated accordingly. We find that the energy spectra in the presence of the TD differ from their flat Minkowski spacetime analogue. The effects of the deformation parameter and TD on the thermal properties of the system is also analysed in detail. We observe that the specific heat capacity of the system tends to exhibit quasi-saturation as the deformation parameter and topological defect approaches unity. The results of our study can be applied in the astrophysical situation where these modifications exist in the understanding of spectroscopical data and it may be used as a probe of the presence of a cosmic string or a global monopole in the Universe.     

Reactivity and magnetism of Fe/InAs(100) interfaces

Interface reaction and magnetism of epitaxially-grown Fe on InAs(100) are studied by core-level photoemission (As 3d and In 4d) and Fe 2p X-ray magnetic circular dichroism using synchrotron radiation. The reactivity of Fe/InAs(100) is relatively low compared to that of other interfaces involving deposition of 3d metals on III-V semiconductors. As a consequence, we observe a magnetic signal at Fe L_{2, 3} edges for the lowest thicknesses studied (1 ML). The atomic magnetic moment reaches a value close to that of the bulk α-Fe (2.2 μ _B) for Fe coverages exceeding 5 ML. A ferromagnetic compound with approximate stoichiometry of FeAs is formed at the interface. The orbital magnetism represents between 12 and 20% of the total momentum, due to 3d density of states depletion and to crystal-field modification of the electronic levels. These properties make the Fe/InAs(100) interface very promising for spin-tunneling devices. Received 4 April 2002 / Received in final form 13 May 2002 Published online 31 July 2002     

Effect of Zn doping on electronic structure and optical properties zincblende GaN(A DFT+U insight)

The development of new materials,having exceptional properties in comparison to existing materials is highly required for bringing advancement in electronic and optoelectronic technologies.Keeping this fact,we investigated structural,electronic,and optical properties of zincblende GaN doped with selected Zn concentrations(6.25%,12.50%,and 18.70%),using the first-principle calculations based on density functional theory with GGA+U.We conducted the entire study using the WIEN2K code.In this study,we calculated various significant parametric quantities such as cohesive energies,formation energies,bulk moduli,and lattice constants along with the study of optical and electronic properties by substituting Ga atoms with Zn atoms in 1×2×2 supercell.The structural stability is confirmed by studying the phonon dispersion curves which suggest that Zn:GaN material is stable against the 6.25%and 18.70%Zn concentrations while for 12.50%,it shows instability.The Hubbard values U=0,2,4,6 eV were added to GGA and the electronic properties were improved with the U=6 eV.Optical absorption was blue shifted while the refractive index and dielectric constant were increased with increasing the Zn concentrations.Electronic properties are enhanced due to the prime contribution of cations(Zn)3ri states.The optical and electronic properties are further discussed in detail in the entire study.     

Effect of the duty ratio on the indium tin oxide (ITO) film deposited by in-line pulsed DC magnetron sputtering method for resistive touch panel

The indium tin oxide (ITO) film was deposited on PET (polyethylene terephthalate) film using in-line pulsed DC magnetron sputtering system with different duty ratios. The reverse time and the frequency of pulsed DC power were changed to obtain the different duty ratios. From the electrical and optical properties such as the sheet resistance, resistivity, thickness and transmittance, the pulsed DC sputtered ITO/PET films were also superior to the DC sputtered ITO/PET films. The reverse time had little effect on the properties of the ITO/PET film and the frequency of pulsed DC power had an immerse effect on the properties of the ITO/PET films. The optimal ITO/PET film was obtained when the frequency was 200 kHz, the reverse time was 1 μs, and the duty ratio was about 80%.     

Mo(CO)6在清洁的和氧化的Si(111)表面上吸附的对比

采用高分辨电子能量损失谱对比研究Mo(CO)₆在清洁的、预吸附氧的和深度氧化的Si(111)表面上的吸附行为. 吸附Mo(CO)₆的C-O伸缩振动模式向低频方向移动,说明Mo(CO)₆与清洁Si(111)和SiO₂/Si(111)表面发生了不同的相互作用,前者较弱而后者较强. 与SiO₂/Si(111)表面的强相互作用可能引起Mo(CO)₆部分解离,形成部分分解的羰基钼物种.     

J-TEXT 动态扰动场交流电源控制系统设计

对 J-TEXT 动态扰动场交流电源及其控制系统进行了介绍,重点对基于FPGA 全数字锁相环的逆变控制单元进行了分析、设计和优化。给出了动态扰动场交流电源及其逆变控制单元的测试和实验结果。结果表明该设计的交流电源控制系统能够满足物理实验对电源输出电流频率、相位调节的需求,能够保证电源的可靠、稳定运行。     

表面缺陷对一氧化碳和甲基基团在金红石TiO2(110)表面吸附的影响

本文利用程序升温脱附技术研究了氧空位浓度对甲基基团和CO在R-TiO₂(110)表面吸附的影响. 结果表明,随着氧空位浓度的变化,吸附在桥氧位的甲基基团和吸附在五配位Ti⁴⁺位点上的CO分子的脱附温度呈现了不同的趋势,揭示了表面缺陷可能对R-TiO₂(110)不同位点上的物质吸附具有重要影响.     

Effect on alloying at the Fe/Ni(001) interfaces on the interlayer exchange coupling

We investigate the stability of various ordered FeNi alloys at the interfaces of Fe/Ni superlattices by using ab initio density functional calculation. We consider an Fe_0.5Ni_0.5 ordered alloy of one or two monolayers thick at different positions beyond the interface and the possibility of an interdiffusion of a complete monolayer of Ni(Fe) in Fe(Ni) slab. An interfacial atomic layer of Fe_0.5Ni_0.5 exchanged with its adjacent Ni monolayers, leading to a buffer zone of Ni₃Fe composition is found to be the most stable structural configuration. For this atomic arrangement we investigate the magnetic profile and the resulting interlayer exchange coupling between the Ni slabs for Fe spacer thickness of 0 to 4 monolayers.