Gate-voltage control of chemical potential and weak antilocalization in Bi₂Se₃

We report that Bi?Se? thin films can be epitaxially grown on SrTiO? substrates, which allow for very large tunablity in carrier density with a back gate. The observed low field magnetoconductivity due to weak antilocalization (WAL) has a very weak gate-voltage dependence unless the electron density is reduced to very low values. Such a transition in WAL is correlated with unusual changes in longitudinal and Hall resistivities. Our results suggest a much suppressed bulk conductivity at large negative gate voltages and a possible role of surface states in the WAL phenomena.     

Bulk band gap and surface state conduction observed in voltage-tuned crystals of the topological insulator Bi2Se3

We report a transport study of exfoliated few monolayer crystals of topological insulator Bi2Se3 in an electric field effect geometry. By doping the bulk crystals with Ca, we are able to fabricate devices with sufficiently low bulk carrier density to change the sign of the Hall density with the gate voltage V(g). We find that the temperature T and magnetic field dependent transport properties in the vicinity of this V(g) can be explained by a bulk channel with activation gap of approximately 50 meV and a relatively high-mobility metallic channel that dominates at low T. The conductance (approximately 2×7e2/h), weak antilocalization, and metallic resistance-temperature profile of the latter lead us to identify it with the protected surface state. The relative smallness of the observed gap implies limitations for electric field effect topological insulator devices at room temperature.     

Thermopower of an Aharonov-Bohm interferometer: theoretical studies of quantum dots in the Kondo regime

We report on the thermopower of an Aharonov-Bohm (AB) interferometer with a quantum dot in the Kondo regime. The thermopower is anomalously enhanced due to the Kondo effect as in heavy fermion systems. In contrast to bulk systems, the sign of the thermopower can be changed by adjusting the energy level scheme or the particle-hole asymmetry of a dot with the gate voltage. Further the magnitude and even the sign of the thermopower in the AB ring can be changed at will with varying either magnetic fields or the gate voltages.     

Experimental evaluation of interface states during time-dependent dielectric breakdown of GaN-based MIS-HEMTs with LPCVD-SiN_x gate dielectric

We experimentally evaluated the interface state density of Ga N MIS-HEMTs during time-dependent dielectric breakdown(TDDB). Under a high forward gate bias stress, newly increased traps generate both at the Si Nx/Al Ga N interface and the Si Nx bulk, resulting in the voltage shift and the increase of the voltage hysteresis. When prolonging the stress duration, the defects density generated in the Si Nx dielectric becomes dominating, which drastically increases the gate leakage current and causes the catastrophic failure. After recovery by UV light illumination, the negative shift in threshold voltage(compared with the fresh one) confirms the accumulation of positive charge at the Si Nx/Al Ga N interface and/or in Si Nx bulk, which is possibly ascribed to the broken bonds after long-term stress. These results experimentally confirm the role of defects in the TDDB of Ga N-based MIS-HEMTs.     

All-optical high speed logic gates using SOA

In this paper a novel and simple structure of a high speed optical logic gate based on bulk semiconductor optical amplifier (SOA) is presented. The gain dynamic and phase response of bulk SOA using rate equations including the dynamics of carrier heating (CH) and spectral-hole burning (SHB) is investigated numerically. The operation of NOR gate is analyzed by using the presented numerical method, and a NOR gate that can operate up to 1 Tbps is designed. By using the proposed structure, high speed logic gates based on bulk SOA can be realized.     

Single-charge transistor based on the charge-phase duality of a superconducting nanowire circuit

We propose a transistorlike circuit including two serially connected segments of a narrow superconducting nanowire joint by a wider segment with a capacitively coupled gate in between. This circuit is made of amorphous NbSi film and embedded in a network of on-chip Cr microresistors ensuring a sufficiently high external electromagnetic impedance. Assuming a virtual regime of quantum phase slips (QPS) in two narrow segments of the wire, leading to quantum interference of voltages on these segments, this circuit is dual to the dc SQUID. Our samples demonstrated appreciable Coulomb blockade voltage (analog of critical current of the SQUIDs) and periodic modulation of this blockade by an electrostatic gate (analog of flux modulation in the SQUIDs). The model of this QPS transistor is discussed.     

Field-modulated carrier transport in carbon nanotube transistors

We have investigated the electrical transport properties of carbon nanotube field-effect transistors as a function of channel length, gate dielectric film thickness, and dielectric material. Our experiments show that the bulk properties of the semiconducting carbon nanotubes do not limit the current flow through the metal/nanotube/metal system. Instead, our results can be understood in the framework of gate and source-drain field induced modulation of the nanotube band structure at the source contact. The existence of one-dimensional Schottky barriers at the metal/nanotube interface determines the device performance and results in an unexpected scaling behavior.     

Transmission phase shift of a quantum dot with kondo correlations

We study the effects of Kondo correlations on the transmission phase shift of a quantum dot in an Aharonov-Bohm ring. We predict in detail how the development of a Kondo resonance should affect the dependence of the phase shift on transport voltage, gate voltage, and temperature. This system should allow the first direct observation of the well-known scattering phase shift of pi/2 expected (but not directly measurable in bulk systems) at zero temperature for an electron scattering off a spin- 1 / 2 impurity that is screened into a singlet.     

The investigation of transport properties of mesoscopic graphite in high magnetic field

The electrical transport properties of mesoscopic graphite have been investigated in a gate voltage configuration. Few layer graphene structures made from Kish graphite exhibit Shubnikov-de Haas (SdH) oscillations in magnetic fields up to 33 T, with a strong gate voltage dependence. A two band model can be used to explain the linear dependence of the SdH frequency on the gate voltage. The temperature dependence of the SdH oscillation amplitude allows the determination of the effective masses of the carriers, which remain comparable between mesoscopic and bulk graphite samples. However, mesoscopic graphite thinner than 130 nm does not exhibit the field induced charge density wave transition seen in bulk samples above 25 T at low temperatures.     

SILC during NBTI Stress in PMOSFETs with Ultra-Thin SiON Gate Dielectrics

Negative bias temperature instability （NBTI） and stress-induced leakage current （SILC） both are more serious due to the aggressive scaling lowering of devices. We investigate the SILC during NBTI stress in PMOSFETs with ultra-thin gate dielectrics. The SILC sensed range from -1 V to 1 V is divided into four parts： the on-state SILC, the near-zero SILC, the off-state SILC sensed at lower positive voltages and the one sensed at higher positive voltages. We develop a model of tunnelling assisted by interface states and oxide bulk traps to explain the four different parts of SILC during NBTI stress.     

Experimental implementation of the optimal linear-optical controlled phase gate

We report on the first experimental realization of optimal linear-optical controlled phase gates for arbitrary phases. The realized scheme is entirely flexible in that the phase shift can be tuned to any given value. All such controlled phase gates are optimal in the sense that they operate at the maximum possible success probabilities that are achievable within the framework of postselected linear-optical implementations with vacuum ancillas. The quantum gate is implemented by using bulk optical elements and polarization encoding of qubit states. We have experimentally explored the remarkable observation that the optimum success probability is not monotone in the phase.     

Topological response theory of doped topological insulators

We generalize the topological response theory of three-dimensional topological insulators (TI) to metallic systems-specifically, doped TI with finite bulk carrier density and a time-reversal symmetry breaking field near the surface. We show that there is an inhomogeneity-induced Berry phase contribution to the surface Hall conductivity that is completely determined by the occupied states and is independent of other details such as band dispersion and impurities. In the limit of zero bulk carrier density, this intrinsic surface Hall conductivity reduces to the half-integer quantized surface Hall conductivity of TI. Based on our theory we predict the behavior of the surface Hall conductivity for a doped topological insulator with a top gate, which can be directly compared with experiments.     

Ferromagnetism mediated by few electrons in a semimagnetic quantum dot

A (II,Mn)VI diluted magnetic semiconductor quantum dot with an integer number of electrons controlled with a gate voltage is considered. We show that a single electron is able to induce a collective spontaneous magnetization of the Mn spins, overcoming the short range antiferromagnetic interactions, at a temperature order of 1 K, 2 orders of magnitude above the ordering temperature in bulk. The magnetic behavior of the dot depends dramatically on the parity of the number of electrons in the dot.     

Gate Tunable Supercurrent in Josephson Junctions Based on Bi_2Te_3 Topological Insulator Thin Films

We report transport measurements on Josephson junctions consisting of Bi_2Te_3 topological insulator(TI) thin films contacted by superconducting Nb electrodes.For a device with junction length L=134 nm,the critical supercurrent I_c can be modulated by an electrical gate which tunes the carrier type and density of the TI film.I_c can reach a minimum when the TI is near the charge neutrality regime with the Fermi energy lying close to the Dirac point of the surface state.In the p-type regime the Josephson current can be well described by a short ballistic junction model.In the n-type regime the junction is ballistic at 0.7 K T 3.8 K while for T 0.7 K the diffusive bulk modes emerge and contribute a larger I_c than the ballistic model.We attribute the lack of diffusive bulk modes in the p-type regime to the formation of p-n junctions.Our work provides new clues for search of Majorana zero mode in TI-based superconducting devices.     

What’s the point? Hole-ography in Poincaré AdS

In the context of the AdS/CFT correspondence, we study bulk reconstruction of the Poincaré wedge of AdS\(_3\) via hole-ography, i.e., in terms of differential entropy of the dual CFT\(_2\). Previous work had considered the reconstruction of closed or open spacelike curves in global AdS, and of infinitely extended spacelike curves in Poincaré AdS that are subject to a periodicity condition at infinity. Working first at constant time, we find that a closed curve in Poincaré is described in the CFT by a family of intervals that covers the spatial axis at least twice. We also show how to reconstruct open curves, points and distances, and obtain a CFT action whose extremization leads to bulk points. We then generalize all of these results to the case of curves that vary in time, and discover that generic curves have segments that cannot be reconstructed using the standard hole-ographic construction. This happens because, for the nonreconstructible segments, the tangent geodesics fail to be fully contained within the Poincaré wedge. We show that a previously discovered variant of the hole-ographic method allows us to overcome this challenge, by reorienting the geodesics touching the bulk curve to ensure that they all remain within the wedge. Our conclusion is that all spacelike curves in Poincaré AdS can be completely reconstructed with CFT data, and each curve has in fact an infinite number of representations within the CFT.     

Study of total ionizing dose radiation effects on enclosed gate transistors in a commercial CMOS technology

This paper studies the total ionizing dose radiation effects on MOS (metal-oxide-semiconductor) transistors with normal and enclosed gate layout in a standard commercial CMOS (compensate MOS) bulk process. The leakage current, threshold voltage shift, and transconductance of the devices were monitored before and after $\gamma $-ray irradiation. The parameters of the devices with different layout under different bias condition during irradiation at different total dose are investigated. The results show that the enclosed layout not only effectively eliminates the leakage but also improves the performance of threshold voltage and transconductance for NMOS (n-type channel MOS) transistors. The experimental results also indicate that analogue bias during irradiation is the worst case for enclosed gate NMOS. There is no evident different behaviour observed between normal PMOS (p-type channel MOS) transistors and enclosed gate PMOS transistors.     

AlGaN/GaN MIS-HEMT using NbAlO dielectric layer grown by atomic layer deposition

We present an AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) with an NbAlO high-k dielectric deposited by atomic layer deposition (ALD).Surface morphology of samples are observed by atomic force microscopy (AFM),indicating that the ALD NbAlO has an excellent-property surface.Moreover,the sharp transition from depletion to accumulation in capacitance-voltage (C-V)curse of MIS-HEMT demonstrates the high quality bulk and interface properties of NbAlO on AlGaN.The fabricated MIS-HEMT with a gate length of 0.5 μm exhibits a maximum drain current of 960 mA/mm,and the reverse gate leakage current is almost 3 orders of magnitude lower than that of reference HEMT.Based on the improved direct-current operation,the NbAlO can be considered to be a potential gate oxide comparable to other dielectric insulators.     

Current distribution in the integer quantum Hall effect: The role of bulk states

The role of bulk and edge currents in a two-dimensional electron gas under the conditions of the integer quantum Hall effect (IQHE) was studied by means of an inductive coupling to Hall bar geometry. From this study we conclude that the extended states at the bulk of the sample below the Fermi energy are capable of carrying a substantial amount of Hall current. For Hall bar geometry sample with a back gate we demonstrated that injected current can be pushed from one edge to another by reversing the direction of the external magnetic field.     

小尺寸应变Si金属氧化物半导体场效应晶体管栅隧穿电流预测模型

小尺寸金属氧化物半导体场效应晶体管(MOSFET)器件由于具有超薄的氧化层、关态栅隧穿漏电流的存在严重地影响了器件的性能,应变硅MOSFET器件也存在同样的问题.为了说明漏电流对新型应变硅器件性能的影响,文中利用积分方法从准二维表面势分析开始,提出了小尺寸应变硅MOSFET栅隧穿电流的理论预测模型,并在此基础上使用二维器件仿真软件ISE进行了仔细的比对研究,定量分析了在不同栅压、栅氧化层厚度下MOSFET器件的性能.仿真结果很好地与理论分析相符合,为超大规模集成电路的设计提供了有价值的参考. 关键词： 应变硅 准二维表面势 栅隧穿电流 预测模型