单壁碳纳米管中电子的有效质量

解析研究了单壁碳纳米管中电子的有效质量，以及导带底的电子有效质量与其管径和螺旋度的关系.结果表明，单壁碳纳米管的几何结构对其电子有效质量有重要的影响.特别是锯齿形窄隙半导体管，发现其导带底的电子有效质量与管径的平方成反比. 关键词： 单壁碳纳米管 电子有效质量     

Strain Effect on the Absorption Threshold Energy of Silicon Circular Nanowires

In this work,the influence of strain on threshold energy of absorption in Silicon circular nanowires is investigated.For this purpose,we first have used the density functional theory(DFT) to calculate the electron and hole effective masses.Then,we have obtained absorption threshold energy with two different procedures,DFT and effective mass approximation(EMA).We have also obtained the band structures of Si nanowires both DFT and EMA.The results show that:i) the expansive strain increases the hole effective mass while compressive strain increases the electron effective mass,ii) the electron and hole effective masses reduce with decreasing the wire size,iii) the absorption threshold energy decreases by increasing strain for compressive and tensile strain and its behavior as a function of strain is approximately parabolic,iv) the absorption threshold energy(for all sizes) obtained using EMA is greater than the DFT results.     

磁场中准二维强耦合磁极化子的有效质量

采用改进的线性组合算符和LLP变分法,研究了外磁场对量子阱中电子与界面光学声子强耦合、与体纵光学声子弱耦合磁极化子的有效质量的影响。对AgCl/KI量子阱进行了数值计算,结果表明,磁极化子的有效质量随阱宽的增加而减小,随磁场的增强而增大,但不同支声子与电子和磁场相互作用对磁极化子有效质量的贡献大不相同。     

Spin mass of an electron liquid

We show that in order to calculate correctly the spin current carried by a quasiparticle in an electron liquid one must use an effective "spin mass" m(s) that is larger than both the band mass m(b), which determines the charge current, and the quasiparticle effective mass m(*), which determines the heat capacity. We present two independent estimates of the spin mass enhancement, m(s)/m(b), in two- and three-dimensional electron liquids, based on (i) previously calculated values of the Landau parameters and (ii) a recent theory of the dynamical local field factor in the spin channel. Both methods yield a significant spin mass enhancement, which is larger in two dimensions than in three.     

Propagation of electrons in coupled quantum wells

Summary We study propagation of an electron wave in a double-quantum-well structure formed by alternate layers of GaAlAs and GaAs. In such a structure, electron states parallel to the layers are described by 2D plane waves and in the perpendicular direction by the bound states of the confining potential. We show that an electron, initially introduced in one well, will execute oscillations between the two wells of the structure. Although the frequency of oscillations depends primarily on the distance separating the wells and the confining potential, it is shown in this paper that the frequency also depends on the effective mass of the electron, if it is different within and outside the well. Expressions are derived for the frequency of oscillations, taking into account the difference in the effective mass of the electron.     

Well-thickness dependent electron transport effective mass and mobility in Sb-based quantum wells

We propose a special kind of Sb-based III–V semiconductor quantum wells, which, in contrary to conventional ones, are able to provide novel transport properties: smaller electron transport effective mass and higher mobility with thinner well width. By properly choosing the barrier materials with smaller electron effective mass and proper band lineups, the novel transport property could be achieved because of the penetration effect of the wave-function when interface roughness and alloy disorder scatterings are taken into consideration.     

Spin polarization dependence of carrier effective mass in semiconductor structures: spintronic effective mass

We introduce the concept of a spintronic effective mass for spin-polarized carriers in semiconductor structures, which arises from the strong spin-polarization dependence of the renormalized effective mass in an interacting spin-polarized electron system. The majority-spin many-body effective mass renormalization differs by more than a factor of 2 at r(s) = 5 between the unpolarized and the fully polarized two-dimensional system, whereas the polarization dependence (approximately 15%) is more modest in three dimensions around metallic densities (r(s) approximately 5). The spin-polarization dependence of the carrier effective mass is of significance in various spintronic applications.     

Influence of magnetic quantization on the effective electron mass in Kane-type semiconductors

Summary We study the effective electron mass at the Fermi level in Kane-type semiconductors on the basis of fourth order in effective mass theory and taking into account the interactions of the conduction electrons, heavy holes, light holes and split-off holes, respectively. The results obtained are then compared to those derived on the basis of the well-known three-band Kane model. It is found, takingn-Hg_1−x Cd _x Te as an example, that the effective electron mass at the Fermi level in accordance with fourth-order model depends on the Fermi energy, magnetic quantum number and the electron spin respectively due to the influence of band nonparabolicity only. The dependence of effective mass on electron spin is due to spin-orbit splitting parameter of the valence band in three-band Kane model and the Fermi energy due to band nonparabolicity in two-band Kane model. The same mass exhibits an oscillatory magnetic-field dependence for all the band models as expected since the origin of oscillations in the effective mass in nonparabolic compounds is the same as that of the Shubnikov-de Hass oscillations. In addition, the corresponding results for parabolic energy bands have been obtained from the generalized expressions under certain limiting conditions.     

Transmission characteristics including the coupling effect between normal and lateral degrees of freedom in single barrier structures with a longitudinal magnetic field

Within the parabolic conduction-band approach, a modified one-dimensional effective mass Schrödinger equation, including the magneto-coupling effect between the longitudinal motion component and the transverse Landau orbits of an electron, is strictly derived. This magneto-coupling effect is generated from the space-dependent effective mass of the electron. Numerical calculations for single barrier structures show that the magneto-coupling has a series of important effects on the transmission probability and the above-barrier quasi-bound states. We suggest that the magneto-coupling effect may be observed by measurements of the optical absorption spectrum in the single barrier structures.     

On the differential conductivity of semiconductor superlattices

The nature of negative differential conductivity (NDC) of a semiconductor superlattice was studied. It is shown that the presence of regions with a negative effective mass in a Brillouin miniband is not necessary for NDC to set in. NDC exists even in superlattices with parabolic and superquadratic miniband dispersion relations, where the electron effective mass is positive everywhere and, in this case, is fully determined by Bragg reflections of the electron. When the electron Bragg reflections are suppressed by optical phonons, NDC can disappear completely. NDC is retained only if there is a sizable region with a negative effective mass in the miniband.     

有限元法计算GaN/AlN量子点结构中的电子结构

根据有效质量理论单带模型，采用有限元方法(FEM)计算了GaN/AlN量子点结构中的电子结构，分析了应变和极化对电子结构的影响，计算了不同尺寸的量子点的能级，分析了量子点的大小对电子能级的影响. 结果表明，形变势和压电势提升了电子能级，而且使简并能级分裂. 随着量子点尺寸的增大，量子限制能减小，而压电势能起到更显著的作用，使电子的能级降低，吸收峰发生红移. 关键词： GaN/AlN量子点结构 有效质量理论 电子能级     

Influence of spin–orbit interactions on the polaron properties in wurtzite semiconductor quantum well

We have study the simultaneous effect of Rashba and Dresselhaus spin–orbit interactions on the polaron properties in wurtzite semiconductor quantum wells. The linear and cubic contributions of the bulk Dresselhaus spin–orbit coupling and the effects of phonon confinement on electron–optical-phonon interaction Hamiltonians are taken into account. We have found analytical solutions for the polaron energies as well as polaron effective mass within the range of validity of perturbation theory. It is shown that the polaron energy and effective mass correction are both significantly enhanced by the spin–orbit coupling. Wave number dependent phonon contribution on the electron energy has minima and varies differently of the spin-up and spin-down states. Polaron self-energy due to interface optical phonon modes has larger values than of the confined optical phonon modes ones. The polaron effective mass exhibits anisotropy and the contribution of the Dresselhaus spin–orbit coupling term on the polaron effective mass is dominated by Rashba one.     

Steady-state and transient electron transport in bulk GaN employing an analytic bandstructure

We have studied the steady-state and transient electron transport in bulk gallium nitride using an ensemble two valley Monte-Carlo approach. We employ an analytic form for the bandstructure which is non-parabolic and includes the inflection point predicted by empirical pseudopotential methods. It has been suggested that the inflection point could give rise to a negative effective mass which would, in turn, give rise to a negative-differential conductivity (NDC). We examine the character of the NDC by varying the energy separation to the upper valleys. We find that for steady-state velocity field characteristics, the transferred electron effect dominates over the negative mass effect. However, the transient characteristics show a small temporary dominance of the negative mass effect when the valley separation is 1.9 eV.     

Physics of the insulating phase in dilute two-dimensional electron gas

We propose to use the radiofrequency single-electron transistor as an extremely sensitive probe to detect the time-periodic ac signal generated by a sliding electron lattice in the insulating state of the two-dimensional electron gas. We also propose to use the optically-pumped NMR technique to probe the electron spin structure of the insulating state. We show that the electron effective mass and spin susceptibility are strongly enhanced by critical fluctuations of the electron lattice in the vicinity of the metal-insulator transition, as observed in experiment.     

晶体中电子的有效质量与能带曲率的关系

通过晶体电子有效质量和曲线曲率的定义，说明晶体电子的有效质量与能带曲率的大小一般没有什么联系，只有在能带极值处才有电子有效质量的大小反比于带曲率的比例关系。     

Nonlinear electrodynamics near a superconducting string

We calculate the effective action for photons in an arbitrary external field using the expansion in the inverse of the mass of the electron. The resulting effective lagrangian is used to calculate magnetization of the vacuum in the vicinity of a superconducting string. The magnetization current partially screens the current in the string and slows down the rate of growth of the current there. We also discuss the scattering of electromagnetic waves on a superconducting string with the nonlinear effects taken into account.     

Electron self-energy and effective mass in a single heterostructure

In this paper, we investigate the electron self-energy and effective mass in a single heterostructure using Greenfunction method. Numerical calculations of the electron self-energy and effective mass for GaAs/A1As heterostructure are performed. The results show that the self-energy (effective mass) of electrons, which incorporate the energy of electron coupling to interface-optical phonons and half of the three-dimensional longitudinal optical phonons, increase (decrease) monotonically from that of interface polaron to that of the 3D bulk polaron with increasing the distance between the positions of the electron and interface.     

Strong-Coupling System of the Electron-Ripplon on Liquid-Helium Film

The Landau-Pekar variational theory for investigating the strong-coupling system of electronphonon in crystals is employed to study the system of an electron strongly coupled to ripplons on the outer surface of the liquid-helium film. Analytical expressions of the ground state energy, the effective mass, the average number of virtual ripplons around the electron and the spatial extension of the electron are obtained. A dimensionless quantity of effective mass ratio has been introduced and compared with the model mass and the Feynman mass which exist in the literature.     

Photoemission from solid surfaces in intense laser fields

We present a Floquet analysis of photoemission of electrons from a solid surface due to its interaction with a laser beam. The method we use is based on a three-dimensional quasifree electron model. The model takes account of the changes in the effective mass of the electron inside and outside the solid and in the reflected and refracted beams due to the presence of the surface. It is shown that the photoemission of electrons from the solid surface may take place not only with no absorption of photons but also along with the emission of extra photons.