750 mW continuous-wave solid-state deep ultraviolet laser source at the 253.7 nm transition in mercury

A high-power continuous-wave coherent light source at 253.7 nm is described. It is based on a solid-state Yb:YAG disk laser with two successive frequency doubling stages and is capable of generating stable output powers of up to 750 mW. Spectroscopy of the 6 (1)S(0)-6 (3)P(1) transition of mercury has been demonstrated.     

A laser system for the spectroscopy of highly charged bismuth ions

We present and characterize a laser system for the spectroscopy on highly charged ²⁰⁹Bi⁸²⁺ ions at a wavelength of 243.87?nm. For absolute frequency stabilization, the laser system is locked to a near-infra-red laser stabilized to a rubidium transition line using a transfer cavity based locking scheme. Tuning of the output frequency with high precision is achieved via a tunable rf offset lock. A?sample-and-hold technique gives an extended tuning range of several THz in the UV. This scheme is universally applicable to the stabilization of laser systems at wavelengths not directly accessible to atomic or molecular resonances. We determine the frequency accuracy of the laser system using Doppler-free absorption spectroscopy of Te₂ vapor at 488?nm. Scaled to the target wavelength of 244 nm, we achieve a frequency uncertainty of σ _{244 nm}=6.14?MHz (one standard deviation) over six days of operation.     

Compact all-solid-state continuous-wave single-frequency UV source with frequency stabilization for laser cooling of Be<Superscript>+</Superscript> ions

A compact setup for generation, frequency stabilization, and precision tuning of UV laser radiation at 313 nm was developed. The source is based on frequency quintupling of a C-band telecom laser at 1565 nm, amplified in a fiber amplifier. The maximum output power of the source at 313 nm is 100 mW. An additional feature of the source is the high-power output at the fundamental and the intermediate second- and third-harmonic wavelengths. The source was tested by demonstration of laser cooling of Be⁺ ions in an ion-trap apparatus. The output of the source at the third-harmonic wavelength (522 nm) was used for stabilization of the laser frequency to molecular iodine transitions. Sub-Doppler spectroscopy and frequency measurements of hyperfine transitions in molecular iodine were carried out in the range relevant for the Be⁺ laser cooling application.     

Mode locking a 1550 nm semiconductor disk laser by using a GaInNAs saturable absorber

Passive mode locking of an optically pumped, InP-based, 1550 nm semiconductor disk laser by using a GaInNAs saturable absorber mirror is demonstrated. To reduce material heating and enable high-power operation, a 50 microm thick diamond heat spreader is bonded to the surface of the gain chip. The laser operates at a repetition frequency of 2.97 GHz and emits near-transform-limited 3.2 ps pulses with an average output power of 120 mW.     

Polarization spectroscopy of the ~1S_0-~3P_1 transition of mercury isotopes at 253.7 nm

We experimentally observe polarization spectroscopy(PS) of the 1S0-3P1 transition of mercury atom gases at 253.7 nm. The PS signal can be observed in all six richly abundant isotopes and the PS signal of six transitions for laser cooling are all clear and of a dispersive line shape. The optimized pump power and probe power are found for the PS of 202 Hg. We find the linearly polarized component in the pump beam will distort the original PS signal due to the use of linear PS. Consequently, the purity of the pump beam is crucial to laser frequency stabilization by PS.     

Laser frequency stabilization by magnetically assisted rotation spectroscopy

We present a method of Doppler-free laser frequency stabilization based on magnetically assisted rotation spectroscopy (MARS) which combines the Doppler-free velocity-selective optical pumping (VSOP) and magnetic rotation spectroscopy. The stabilization is demonstrated for the atomic rubidium transitions at 780 nm. The proposed method is largely independent of stray magnetic fields and does not require any modulation of the laser frequency. Moreover, the discussed method allows one to choose between locking the laser exactly to the line center, or with a magnetically-controlled shift to an arbitrary frequency detuned by up to several natural linewidths. This feature is useful in many situations, e.g. for laser cooling experiments. In addition to presenting the principle of the method, its theoretical background and peculiarities inherent to the repopulation VSOP are discussed.     

Continuous-wave all-solid-state 244 nm deep-ultraviolet laser source by fourth-harmonic generation of an optically pumped semiconductor laser using CsLiB6O10 in an external resonator

We report an all-solid-state laser system that generates over 200 mW cw at 244 nm. An optically pumped semiconductor laser is internally frequency doubled to 488 nm. The 488 nm output is coupled to an external resonator, where it is converted to 244 nm using a CsLiB(6)O(10) (CLBO) crystal. The output power is limited by the available power at 488 nm, and no noticeable degradation in output power was observed over a period of several hours.     

CW ultraviolet saturation spectroscopy of the 6p 3P0-9s 3S1 transition in mercury at 246.5 nm

We have measured the even isotope structure of the 6p ³P₀-9s ³S₁ transition in mercury at 246.5 nm using saturated absorption spectroscopy with radiation produced as the sum frequency of a 363.8 nm argon ion laser and an LD700 ring dye laser in ADP. This is the first use of cw sum-frequency mixing in nonlinear laser spectroscopy in the ultraviolet. No previous cw Doppler-free measurements have been reported at wavelenghts below 294.5 nm     

Narrow-band UV radiation (250–260 nm) from intracavity doubling a single-mode ring dye laser

Generation of continuous-wave, tunable UV radiation (250–260 nm) by intracavity doubling a coumarin-515 ring dye laser is described. A cooled (200–280 K) ADP crystal with end faces cut at Brester's angle is placed inside the laser ring cavity which has been compensated for astigmatism and coma. UV output powers at 254 nm of 120 μW and 60 μW are achieved with the laser operating multimode (bandwidth ? 20 GHz) and single-mode (bandwidth ? 50 MHz), respectively. Continuous single-mode scans over the 253.7 nm mercury profile demonstrate sub-Doppler resolution of the Hg 6s6p ³P^O₁ - 6s²¹S₀ transition.     

Single-frequency operation of a high-power, long-wavelength semiconductor disk laser

An optically pumped, high-power, single-frequency semiconductor disk laser is demonstrated. A thin (50 microm) diamond bonded to an InGaAsP gain chip provides the combined functions of heat removal and spectral filtering, thus eliminating the need for the additional intracavity etalons that are usually employed for single-frequency operation. In a short cavity (4 mm) configuration we obtained a maximum output power of 470 mW at 0 degrees C and 170 mW at 20 degrees C in a near-diffraction-limited beam (M2 < 1.2). The emission wave-length was 1549 nm and the linewidth was less than 200 MHz.     

High-sensitivity intracavity laser absorption spectroscopy with vertical-external-cavity surface-emitting semiconductor lasers

We report the demonstration of high-sensitivity intracavity laser absorption spectroscopy with multiple-quantum-well vertical-external-cavity surface-emitting semiconductor lasers (VECSEL's). A detection limit of 3x10(-10) cm (-1) has been achieved. The spectrotemporal dynamics of a VECSEL in the 1030-nm wavelength region has been studied. The laser was operating cw at room temperature, with a baseline signal-to-noise ratio as high as 400. The laser was optically pumped with a threshold as low as 80 mW and was broadly tunable over a spectral range of ~75 nm .     

Blue 489-nm picosecond pulses generated by intracavity frequency doubling in a passively mode-locked optically pumped semiconductor disk laser

We report the generation of blue 489-nm picosecond laser pulses by intracavity second-harmonic generation in a mode-locked optically pumped InGaAs vertical-external-cavity surface-emitting laser. Mode locking achieved by a semiconductor saturable absorber mirror generated 5.8-ps-long sech²-shaped pulses at an emission wavelength of 978 nm and a repetition rate of 1.88 GHz. Intracavity frequency doubling in a 5-mm-long lithium triborate crystal generated blue picosecond pulses with a spectral width of 0.15 nm and an average output power of up to 6 mW.     

Rb saturation spectroscopy with an optically narrowed FM diode laser

A fast-frequency modulated (FM) diode laser has been optically narrowed using the technique of resonant optical feedback, to provide linewidths in each FM mode of ≈ 200 kHz peak-to-peak. With a drive frequency of 50 MHz and modulation index of 0.2, the FM laser has been used for the first time to obtain Doppler-free FM spectra of the Rb D₁ line at 795 nm. The potential use of this system for laser frequency stabilisation is discussed.     

Optical amplification in a first-generation dendritic organic semiconductor

We report a study of a new class of organic semiconductor as an optical gain medium. We demonstrate amplification of violet light by use of stimulated emission in a solution of a first-generation bis-fluorene-cored semiconducting dendrimer. Amplification is also observed in the solid state by means of amplified spontaneous emission in an optically pumped dendrimer planar waveguide. Gains of 36 dB cm(-1) at 420 nm and 26 dB cm(-1) at 390 nm in solution and 350 dB cm(-1) in the solid state are obtained. These results show that semiconducting dendrimers have potential as visible laser and amplifier materials.     

Electrical pumping of a third-order mode semiconductor laser

AlGaAs-based quantum well laser structures with third-order waveguide mode emission at 775 nm are a promising route toward compact twin-photon sources at 1.55 μm based on the principle of modal phase matching between the pumping frequency and fundamental modes at half frequency in III–V semiconductor waveguides. Following the demonstration and characterization of an optically pumped third-order mode semiconductor laser, in this paper we present data of the corresponding structure under conditions of electrical pumping. By pumping electrically and optically the same sample made for current injection, identical transverse far-field angular laser mode profiles are measured and with very low parasitic losses. Although they do not follow the third-order mode emission pattern as it is expected, however this means that the different way of pumping, that of the electrical one as compared to optical pumping is not responsible for the absence of third-order mode emission. Furthermore, since the undoped optically pumped laser sample correctly emits on the third-order mode, it is concluded that the cladding layers of the structure still need to be optimized in doping and thickness, in order to reduce the internal losses for the third-order mode.     

980nm OPS-VECSEL关键参数的理论分析

光抽运半导体垂直外腔面发射激光器(Optically Pumped Semiconductor Vertical External Cavity SurfaceEmission Laser)的输出特性受到诸多参数的影响,理论分析和模拟显得尤为重要.设计了一种以808 nm二极管激光耦合模块为光抽运光源,In_0.159Ga_0.841As/GaAs_0.94P_0.06为增益介质的980 nm光抽运垂直外腔面发射激光器,并借助于PICS3D软件计算了器件各种特性参数.分析了芯片半径、量子阱的周期数以及外腔镜反射率对器件性能的影响,特别是对阈值和光-光转换效率的影响.模拟结果表明,器件的半径影响光-光转换效率.量子阱个数和外腔镜反射率对器件的输出功率和光-光转换效率都有影响,所以要根据实际需要,设计、生长结构和进行实验.     

Optically pumped far infrared lasers

The far-infrared (FIR) region of the electromagnetic spectrum is commonly thought of as the wavelength region ≈ 30μm-≈2 mm. Thus, the FIR wavelength region is located between the more familiar areas of microwaves and optics. Primarily due to the lack of FIR sources and detectors, the FIR region is difficult to access and therefore relatively unexplored and unused. The FIR source problem is presently under attack from neighbouring disciplines; from the microwave side by extending the frequency operating range of classical electron tube oscillators (e.g. backward wave oscillators) and semiconductor devices (e.g. IMPATT and quantum well oscillators) and from the optical side primarily by optically pumped molecular gas lasers.The FIR technology evolution accelerated in the mid 60's with the discovery of the discharge pumped hydrogen cyanide laser, lasing at a handful of lines located at about 330μm wavelength. However, the most important step towards a useful coherent FIR source was the discovery of the optically pumped FIR laser in 1970. In optically pumped FIR lasers a molecular gas (e.g. methyl fluoride methyl alcohol, formic acid) is pumped by an external laser, usually a carbon dioxide laser. The FIR laser transitions typically takes place between adjacent rotational levels in an excited vibrational state. Today, optically pumped FIR lasers cover the full FIR region by more than one thousand discrete laser lines observed in hundreds of FIR laser media. FIR output powers on the order of 1–100 mW are available from a vast number of laser transitions.Despite the rapid development of semiconductor FIR oscillators the optically pumped FIR laser is still the only practical unit that bridge the full frequency-gap between microwaves and optics. The fact that FIR lasers are considered as local oscillators in space born applications, indicate that FIR laser technology has matured considerably.This survey paper discusses optically pumped FIR lasers from the engineer's point of view: principles of operation, design and characteristics.     

High-power ultraviolet 278 nm laser from fourth-harmonic generation of a Nd:YAG laser in CsB3O5

We demonstrate a high-power UV 278 nm laser by fourth-harmonic generation (FHG) of a 1112 nm Nd:YAG laser in a nonlinear optical (NLO) crystal CsB3O5 (CBO) for the first time, to our best knowledge. A 30 W level diode-pumped Q-switched Nd:YAG laser at 1112 nm with beam quality factor M2=1.2 was used as the fundamental light source at a pulse width of 500 ns. With an LiB3O5 crystal, the 1112 nm laser was first frequency-doubled to 556 nm with an average output power of 13.5 W. It was then frequency doubled again in a CBO crystal to obtain the FHG output at 278 nm. The maximum average output power of the 278 nm laser is up to 1.5 W. The results demonstrated that CBO crystal is a promising NLO material for UV high-power lasers below 300 nm.     

Optically pumped,indirect-gap Al_{\rm x}Ga_{1-{\rm x}}As lasers

We demonstrate optically pumped lasers with active layers of indirect-gap AlGaAs operating up to room temperature. The emission wavelength is 609 nm at 20 K and 639 nm at 300 K, respectively. The laser threshold shows a weak sensitivity on the lattice temperature. The relevant parameters of the lectron-hole plasma close to threshold are determined from gain spectroscopy using the variable stripe-length method. Received: 20 June 1996 / Accepted: 14 August 1996     

Efficient green generation by intracavity frequency doubling of an optically pumped semiconductor disk laser

We report the use of bismuth borate for efficient intracavity frequency doubling of an optically pumped semiconductor disk laser. An output power of 220 mW at 529 nm at room temperature has been demonstrated, corresponding to 52% conversion efficiency with respect to the fundamental power. The results are compared to frequency doubling with a potassium titanyl phosphate nonlinear crystal. PACS 42.55.Px; 42.70.Mp; 42.72.Bj