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1.
We discuss the effects of the Pauli paramagnetism on the excess conductivity σfl due to fluctuations of the superconducting order parameter. We derived a formula for σfl for a thin film placed in a magnetic field of an arbitrary orientation α. It was found that σfl has a universal behavior as a function of some parameterp which depends on α and ΔH=H-H c. If ΔH is kept constant and σfl is measured as a function of α, in the absence of the Pauli paramagnetism σfl is maximum when the field is parallel to the film and is minimum when the field is perpendicular. But in high field superconductors due to the effect of the Pauli paramagnetism σfl becomes maximum at some intermediate field orientation. We also discussed the excess conductivity in magnetic alloys in which impurity spins are aligned by an external magnetic field. It was shown that in this case one should expect, with certain strengths of the external field, the excess conductivity which is non-monotonic in temperature.  相似文献   

2.
We present measurements of the electrical conductivity of barely metallic n-type GaAs that are driven to the metal-insulator transition (MIT) by magnetic field. The experiments were carried out at low temperature in the range (4.2-0.066 K) and in magnetic field up to 4 T. We have determined the magnetic field for which the conductivity changes from the metallic behavior to insulator regime. On the metallic side of the MIT, the electrical conductivity is found to obey σ=σ0+mT1/2 down to 66 mK. Physical explanation to the temperature dependence of the conductivity is given in metallic side of the MIT using a competition between different effects involved in the mechanisms of conduction, like electron-electron interaction effect, Zeeman spin-splitting effect, and weak localization effect.  相似文献   

3.
Thermal conductivity of paramagnetic Tb3Ga5O12 (TbGG) terbium-gallium garnet single crystals is investigated at temperatures from 0.4 to 300 K in magnetic fields up to 3.25 T. A minimum is observed in the temperature dependence κ(T) of thermal conductivity at T min = 0.52 K. This and other singularities on the κ(T) dependence are associated with scattering of phonons from terbium ions. The thermal conductivity at T = 5.1 K strongly depends on the magnetic field direction relative to the crystallographic axes of the crystal. Experimental data are considered using the Debye theory of thermal conductivity taking into account resonance scattering of phonons from Tb3+ ions. Analysis of the temperature and field dependences of the thermal conductivity indicates the existence of a strong spin-phonon interaction in TbGG. The low-temperature behavior of the thermal conductivity (field and angular dependences) is mainly determined by resonance scattering of phonons at the first quasi-doublet of the electron spectrum of Tb3+ ion.  相似文献   

4.
Using the time dependent Ginzburg-Landau theory the influence of a finite and even strong magnetic field on the fluctuations in superconductors aboveT c is studied. We calculate the dynamical conductivity, the Hall angle, and the static magnetisation from the fluctuations of the charge current associated with the fluctuations of the order parameter. It is found that the magnetic field generally enhances the singular contributions of the fluctuations to the conductivity and the susceptibility. Associated with this enhancement is a reduction of the characteristic frequency scale close toT c .  相似文献   

5.
The thermal conductivity of the ferromagnetic insulator K2CuCl4 · 2H2O has been measured near its Curie temperature Tc. The measurements were made as a function of temperature in constant external magnetic field and as a function of field along isotherms. The results indicate a relaxation rate for magnetic critical scattering of phonons varies as H?1/2.  相似文献   

6.
The optical constants of Eu-chalcogenide single crystals have been determined at room temperature for photon energies from 1 to 6 eV. In the same energy range the transmission of thin evaporated films (except for EuO) has been measured with polarized light above and below the magnetic ordering temperature. The observed polarization-dependent splittings of the two main absorption maxima in the region of magnetic order suggest transitions from the 4f7-level into the crystal field split 5dt2g- and 5deg-states. An attempt has been made to relate the maxima of the absorption coefficient to interband transitions and transitions from the localized 4f-states. With this assumption we derived a consistent energy level scheme of the four Eu-chalcogenides. From the scheme we gained useful information about the width of the 5d-states, the crystal field splitting and the possible type of conductivity. Finally we tried to explain theoretically the splittings observed in the region of magnetic order. For this purpose a one-particle model has been used to calculate the transition probabilities for the 4f7?4f6(7F J ) 5dt2g and the 4f7?4f6(7F J ) 5deg transition, taking into account an exchange interaction as well as a spin-orbit coupling. Although this simple model can explain the splittings of the excited 4f6(7F J ) 5deg-state, a complete explanation of the effect of magnetic order on the 4f6(7F J ) 5dt2g-state fails up to now.  相似文献   

7.
Experimental results are reported for the magnetic field influence on the thermal conductivity of CH3CN-Ar gas mixtures at various compositions for T = 300 K. The observed field dependence is analyzed in terms of the contributions from the W[J](2) and WJ polarizations.  相似文献   

8.
The effect of the type of conductivity and the doping level of InSb single crystals on the mobility of fast 60° dislocations in a magnetic field is discovered. It is found that doping of a pure InSb crystal with tellurium (n-type impurity) to 1018 cm?3 reduces the mobility of dislocations to the background level. At the same time, in p-type InSb crystals doped with Ge with the same carrier concentration (1018 cm?3), the magnetoplastic effect is manifested clearly. It is shown that preliminary mechanical loading and, hence, internal stresses in the crystal affect not only the mean path length of dislocations in a magnetic field but also the magnitude of the threshold magnetic field below which the magnetoplastic effect is not observed. Possible reasons for these phenomena are discussed.  相似文献   

9.
We study the electrical conductivity in magnetized neutron star cores produced by collisions between charged particles. We take into account the ordinary exchange of longitudinal plasmons and the exchange of transverse plasmons in collisions between particles. The exchange of transverse plasmons is important for collisions between relativistic particles, but it has been disregarded previously when calculating the electrical conductivity. We show that taking this exchange into account changes the electrical conductivity, including its temperature dependence (thus, for example, the temperature dependence of the electrical resistivity along the magnetic field in the low-temperature limit takes the form ?T 5/3 instead of the standard dependence ?T 2 for degenerate Fermi systems). We briefly describe the effect of possible neutron and proton superfluidity in neutron star cores on the electrical conductivity and discuss various scenarios for the evolution of neutron star magnetic fields.  相似文献   

10.
We study the thermal transport in the one-dimensional spin-1/2 Heisenberg antiferromagnet in a staggered magnetic field. The thermal conductivity was calculated using bosonization and the Kubo linear response formalism in order to determine the thermal Drude weight Dth(T).  相似文献   

11.
12.
The metal-insulator (MI) transition induced by a magnetic field was evidenced for the first time in compensated n-type GaSb layers grown by molecular beam epitaxy. The free electron densities were in the low 1016 cm−3 range or even slightly lower, so that the zero-field 3D electron gas was degenerate and, at the BMI magnetic field of the MI transition, it populates only the spin-split 0(+) Landau level (extreme quantum limit). On the metallic side of the MI transition a T1/3 dependence of the conductivity was assumed to fit the low-T data and to estimate the BMI value, which resulted of 9.1 T in the purest sample. The MI transition manifests in a strong increase of the diagonal resistivity with the magnetic field, but not of the Hall coefficient, suggesting that the apparent electron density is practically constant, whereas the mobility varies strongly. The evidence of a maximum in the temperature dependence of the Hall coefficient has been explained through a two channels transport mechanism involving localized and extended states.  相似文献   

13.
Quantum states of 2D electrons are studied in a periodic potential without inversion center in the presence of a magnetic field. It is shown that the energy spectrum in magnetic subbands is not symmetric about the center of magnetic Brillouin zone E(k)≠E(?k). Singularities (phase branching points) of the electron wave function, which determine the quantization law of Hall conductivity σxy, are studied in the k space. It is found that a sharp change takes place in the number of points in the magnetic Brillouin zone and in the corresponding values of topological invariants determining the Hall conductivity of filled subbands. It is noted that the longitudinal conductivity of a lattice without inversion center placed in a magnetic field is not invariant with respect to a change in sign of the electric field, and a photovoltaic effect must arise in an ac electromagnetic field.  相似文献   

14.
We have measured the far-infrared absorption of iron-doped MgO in the wavenumber region 10–200 cm?1 and in magnetic fields up to 6 T. Absorption peaks found at 107.0 and 110.5 cm?1 are assigned to magnetic dipole transitions between the spin-orbit Г5g groundstate (J = 1) and the Г3g, Г4g excited states (J = 2) of the Fe2+ -ion at a cubic site. The observed magnetic field dependence shows that Г4g is the higher excited level, so that the crystal field order of the levels is not changed by the reduction of the spin-orbit splitting attributed to a dynamic Jahn-Teller effect. An additional absorption peak at 33.4 cm?1 is found to split in magnetic field.In iron-doped KMgF3 absorption peaks at 52 and 87 cm?1 that have previously been attributed to the same transitions of Fe2+ are found to remain unshifted and unsplit in magnetic fields up to 6 T.  相似文献   

15.
The dependence of the different components of the conductivity resp. the resistivity tensor upon the strength and direction of an external magnetic field is discussed qualitatively. — In metals, in which the Fermi surface is simply closed, the changes in longitudinal and transversal resistance and the Hall coefficients are large if the anisotropies of the Fermi surface resp. of the scattering mechanism in the planes perpendicular to magnetic field direction are large, and vice versa. In fields, in which this effect already clearly is marked, the changes in transversal resistance in addition increase with increasing anisotropies ink-space perpendicular to Hall field direction, whereas by equal set in of current and Hall field direction the Hall coefficients now show a tendency to decrease with increasing anisotropies perpendicular to magnetic field direction. The order of Hall coefficients may change in high magnetic fields. In contrast to the changes in resistance the Hall coefficients decrease with increasing strength of magnetic field. — In the presence of open Fermi surfaces the transversal resistance doesn't saturate in the direction of the open orbits. If open orbits exist in more than one direction, saturation returns and the Hall coefficients now vanish proportional to 1/B 2. In considering open Fermi surfaces it is not allowed to neglect scattering in strong magnetic fields.  相似文献   

16.
Mössbauer sidebands up to the first order from a single parent line have been produced by subjecting a non magnetic W(181W) Mössbauer source to a strong oscillating magnetic field of up to 230 Oe amplitude and a frequency of about one megahertz. The sidebands positions and intensities agree very well with theory, which is based on a periodic time-dependent interaction of the magnetic field with the nuclear magnetic moments of ground and excited states, respectively. From the sideband intensity ag-factor ratio ofg e /g g =1.75(6) was derived.  相似文献   

17.
We report the observation of a variable density inversion layer on p-PbTe. The carriers in the inversion channel are found to have a mobility on the order of 250,000 cm2 V-1 sec-1. Shubnikov-de Haas oscillations in the channel conductivity were measured in magnetic fields up to 6 T. From the observed periodicity we conclude that the oscillations represent only a fraction of the total number of electrons in the channel.  相似文献   

18.
The Cr1/3NbS2 magnet is studied by nuclear magnetic resonance (NMR) at 53Cr nuclei in a zero applied magnetic field. The following two frequency ranges are distinguished in the 53Cr NMR spectrum at T = 4.2 K: ν 1 = 64–68 MHz and ν 2 = 49–51 MHz. They can be related to two valence states of chromium ions, namely, Cr4+ and Cr3+. The components of the electric field gradient, the hyperfine fields, and the magnetic moment at chromium atoms are determined. The NMR data demonstrate that the magnetic moments of chromium lie in plane ab and form a magnetic structure consisting of regions with a helicoidal magnetic order and regions where this order is broken.  相似文献   

19.
It is shown that the hydrostatic pressure leads to the strong increase of InSb (n=2·1014 cm-3) crystal resistivity below 100 mK. Increase of the electron effective mass due to applied pressure does not influence the behavior of magnetoresistivity for temperatures higher than 100 mK whereas it causes a strong increase in positive magnetoresistivity at T < 100 mK. The observed decrease in the hopping conductivity reflects the pressure and magnetic field induced reduction of the electron localization length.  相似文献   

20.
The conductivities of n-type inversion layers in (100) surfaces of p-type silicon were measured extensively as functions of electron density in the inversion layer, the ambient temperature and the applied magnetic field. Measurements were made on the carefully fabricated four “classes” of MOS field-effect transistors whose maximum mobilities at 4·2K were 14,000, 8000, 6800 and 1500 cm2/V·sec, respectively. From the temperature dependence of the mobility, dominant momentum scattering was reasonably ascribed to surfon at 100 ~ 300 K. and degenerate or non-degenerate coulomb scattering at lower temperatures as treated by Stern and Howard. From the curves of conductivity vs temperature at low temperatures and low electron concentration for specimens with high mobilities, an activation energy of 1·2 meV, relating to the shallow bound states associated with the lowest electrin sub-band, was observed. The conductivity σxx of the inversion layer in a strong transverse magnetic field showed behaviors like those of completely free electrons without effects belonging to its material in its oscillation pattern. That is, the peak value of σxx as a function of the gate voltage VR dependend only on the Landau index. The σxx as a function of the magnetic field H at a constant VR showed a similar Shubnikov-de Haas (SdH) type oscillation to that of three dimensional one. The SdH oscillation gave an “apparent” g-value g* which ranges from 2 to 5 depending on the surface carrier density ns, due to the change in the ratios of the widths of the Landau levels to the level separation. The “reasonable” g-value of the conduction electrons in the inversion layer has been determined using a modified tilted magnetic field method. The g-value at the fixed magnetic field was independent of surface carrier density ns and tended to 2 in the extreme strong magnetic field.Discussion is made of the g-value relating to the Landau level width and the energy gaps in the density of states under strong magnetic field.  相似文献   

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