Orbital ordering in Mott-insulators La2O3Fe2Se2 and La2O3Co2Se2

The electronic structure and magnetic properties of new layered oxyselenide compounds La₂O₃Fe₂Se₂ and La₂O₃Co₂Se₂ are studied by first-principles calculations. Our results indicate that both compounds are Mott-insulators with orbital ordering. The ground states of both compounds are the checkerboard antiferromagnetic states, which are different from the iron pnictide superconductors, although their structures are similar to those of the Fe-As-based superconductors.     

Pinning mechanism in carbon nanotube doping of MgB2 superconductor

MgB_1.9C_0.1 samples are synthesized under the ambient pressure (AP) and high pressure (HP), respectively. The further studies demonstrate different field-dependence of the critical current density J_c(H) in each sample. In the view of two-gap superconductivity in these samples, δT_c pinning (resulting from the spatial fluctuations of the transition temperature) is dominant in the AP sample, while in the HP sample, both δT_c and δl pinning (due to the mean-free-path fluctuations) act together and their contributions vary with temperature. Besides the improvement of H_c2(0), due to the different pinning mechanism, J_c(H) of the HP sample shows a slower decay with the increasing fields than that of the AP sample in high fields, which suggests a possible method of retarding the rapid decay of J_c(H) under elevated fields.     

Dielectric properties and temperature stability of BaTiO3 co-doped La2O3 and Tm2O3

The influence of La₂O₃ and Tm₂O₃ co-doping on the dielectric properties and the temperature stability of BaTiO₃ was investigated. BaTiO₃ ceramics were prepared with the compositional formula of (Ba_1−xLa_x)(Ti_1-x/4−yTm_y)O₃. La₂O₃ and Tm₂O₃ co-doping in BaTiO₃ mainly had effects on an increase in the dielectric constant and the temperature stability, respectively. The increase of La₂O₃ concentration and the decrease of Tm₂O₃ concentration in BaTiO₃ resulted in a decrease of lattice parameter and tetragonality because La³⁺ ion substituting for Ba site is smaller than Ba²⁺ ion and Tm³⁺ ion substituting for Ti site is larger than Ti⁴⁺ ion. With the increase of La₂O₃ and the decrease of Tm₂O₃, the dielectric constant of BaTiO₃ was enhanced in spite of the reduction of tetragonality. P-E hysteresis measurements revealed that this phenomenon was based on the improvement of remanent polarization with the increase of La₂O₃ concentration. The introduction of excess Tm₂O₃ in BaTiO₃ suppressed the grain growth and BaTiO₃ ceramics showed higher temperature stability due to the stable tetragonal structure and the small grain size with the increase of Tm₂O₃ concentration.     

Enhanced superconducting properties of Eu2O3-doped MgB2

Bulk polycrystalline samples of Eu₂O₃-doped MgB₂ have been synthesized by a standard solid state reaction route and their structural and superconducting properties have been investigated. As a function of Eu₂O₃ content we have found a significant increase in the critical current density (J_c) and the irreversibility field (H_irr) in the magnetic field range 0–6 T. The XRD results reveal the presence of MgO and EuB₆ secondary phases along with the main hexagonal phase of MgB₂. The strain values and the lattice distortions have been found to increase almost linearly with the nominal Eu₂O₃ content. The observed significant improvement in J_c(H) and H_irr in the Eu₂O₃-doped MgB₂ samples, thus is mainly attributed to the lattice distortions introduced by Eu₂O₃ doping.     

Density of valence states of As2O3 and Sb2O3

The densities of valence states of As₂O₃ and Sb₂O₃ have been measured by means of X-ray photoemission, ultraviolet photoemission, and soft X-ray emission spectroscopy. The spectra can be interpreted on the basis of existing models for the As and Sb chalcogenides.     

The microwave response of MgB2 /Al2O3 superconducting thin films

Microwave characteristics of MgB2/Al2O3 superconducting thin films were investigated by coplanar resonator technique. The thin films studied have different grain sizes resulting from different growth techniques. The experimental results can be described very well by a grain-size model which combines coplanar resonator theory and Josephson junction network model. It was found that the penetration depth and surface resistance of thin films with smaller grain sizes are larger than those of thin films with larger grain sizes.     

Pinning enhancement in MgB2-magnetic particles composites

The temperature dependence of microwave absorption hysteresis is measured in superconducting composites, prepared from MgB₂ and powders of magnetic Ni, Co, and non-magnetic Ti. In MgB₂–Ni and MgB₂–Ti composites the increase of microwave absorption hysteresis, by 150% and 25%, respectively, is found. In both cases this is connected with pinning enhancement. In MgB₂–Co composites a decrease of the superconducting transition temperature and worsening of pinning properties are observed.     

Pinning potential of stacking fault-related dislocations in YBa2Cu3O7

The pinning potential of the 031 type dislocation has been calculated. This dislocation bounds the excess Cu---O layer defect commonly observed in YBa₂Cu₃O₇. It was found that there is a strong pinning anisotropy between edge dislocations lying along [100] and [010]. For the former, a repulsive potential of about 30 meV is found, while the latter exhibits an attractive interaction of less than this magnitude. This potential is short-range (about 2ξ), indicating that these dislocations would act as distributed point-like pinning sites.     

Enhancement of Critical Current Density in Graphite Doped MgB2 Wires

Graphite doped MgB2-xCx (x = 0.00, 0.05, 0.10) wires were fabricated via the in situ powder-in-tube method in flowing argon by using low carbon steel tubes as the sheath materials. With the increase of graphite concentration,the amount of unreacted graphite in the core area increases, and the average grain size of MgB2 decreases. It is found that the critical current density Jc can be significantly improved by graphite doping. The MgB2 wire with x = 0.05 exhibits the best Jc value of 16710 A/cm^2 at 6K, 4.5T, but the MgB1.9C0.1 wire has the highest Jc value of 2060 A/cm^2 at 6 K, 8 T. It is suggested that the enhancement of Jc is due to not only the improvement of the microstructure features but also the introduction of pinning centres.     

Emission features of Ho ion in Nb2O5, Ta2O5 and La2O3 mixed Li2O-ZrO2-SiO2 glasses

Li₂O-ZrO₂-SiO₂: Ho³⁺ glasses mixed with three interesting d-block elemental oxides, viz., Nb₂O₅, Ta₂O₅ and La₂O₃, were prepared. Optical absorption and photoluminescence spectra of these glasses have been recorded at room temperature. The luminescence spectra of Nb₂O₅ and Ta₂O₅ mixed Li₂O-ZrO₂-SiO₂ glasses (free of Ho³⁺ ions) have also exhibited broad emission band in the blue region. This band is attributed to radiative recombination of self-trapped excitons (STEs) localized on substitutionally positioned octahedral Ta⁵⁺ and Nb⁵⁺ ions in the glass network. The Judd-Ofelt theory was successfully applied to characterize Ho³⁺ spectra of all the three glasses. From this theory various radiative properties, like transition probability A, branching ratio β_r and the radiative lifetime τ_r, for ⁵S₂ emission levels in the spectra of these glasses have been evaluated. The radiative lifetime for ⁵S₂ level of Ho³⁺ ions has also been measured and quantum efficiencies were estimated. Among the three glasses studied the La₂O₃ mixed glass exhibited the highest quantum efficiency. The reasons for such higher value have been discussed based on the relationship between the structural modifications taking place around the Ho³⁺ ions.     

Optical properties of La2O3 doped diamond-like carbon films

A novel kind of La₂O₃ doped diamond-like carbon (DLC) films with thickness of 100-120 nm were deposited by unbalanced magnetron sputtering. Raman spectra and photoluminescence properties were measured by Raman spectrometer operated by 325 nm He-Cd laser and 514 nm Ar⁺ laser, respectively. The intensities of Raman spectra and photoluminescence are higher than those of pure DLC films. The La₂O₃ doped DLC films have the potential promising for the application of solar cell coatings.     

La2O3对Yb:Y2O3透明陶瓷光谱性能的影响

研究了La₂O₃对Yb：Y₂O₃透明陶瓷光谱性能的影响，添加适量La₂O₃以后，Yb：Y₂O₃透明陶瓷的吸收峰和发射峰的位置不变，但由于La³⁺的离子半径大于Y³⁺的离子半径，在Y₂O₃中引入La³⁺离子后，导致Y₂O₃晶格常数变大，晶场强度变弱，同时降低了Y₂O₃晶体的有序度，致使发射峰强度有所下降，发射截面变小.过量的La₂O₃（x=0.16）造成Yb³⁺激活离子发射强度明显下降；其荧光寿命在添加La₂O₃后总体增大45%—60%. 关键词： 氧化镧 氧化钇 透明陶瓷 光谱性能     

Subsolidus phase relation in the Bi_2O_3–Fe_2O_3–La_2O_3 system

Bismuth-containing semiconductor material is a hot topic in photocatalysts because of its effective absorption under the visible light.In this paper,we expect to explore a new bismuth-based photocatalyst by studying the subsolidus phase relations of the Bi2O3–Fe2O3–La2O3system.The X-ray diffraction data shows that in this ternary system the ternary compound does not exist,while seven binary compounds(including one solid solution series Bi1 xLaxO1.5with 0.167≤x≤0.339)are obtained and eight compatibility triangles are determined.     

关于MgB2/Al2O3超导薄膜电阻转变和各向异性的研究

利用电子束蒸发方法将MgB₂超导薄膜沉积到Al₂O₃(001)衬底上.采用标准的四引线法研究了磁场平行和垂直超导薄膜ab平面下的电阻转变.一个激活能模型 U(T,H)=U₀(1-T/(T_c+δ))ⁿ(1-H/H 关键词： 2/Al₂O₃')" href="#">MgB₂/Al₂O₃ 超导体 电阻转变 各向异性     

La0.67Ca0.33MnO3薄膜皮秒光电效应

在1064 nm波长脉冲激光（脉宽25 ps）的照射下，钙钛矿氧化物薄膜La0.67Ca0.33MnO3/SrTiO3具有超快光电效应，对激光脉冲显示ps量级的响应时间，上升沿响应时间300 ps，半高宽700 ps，同时，对激光能量的响应灵敏度为500 mV/mJ。     

Role of the interfacial state: a comparison of Co/Al2O3/NiFe and La0.7Ca0.3MnO3/Al2O3/La0.7Ca0.3MnO3 tunnel junctions

Two junctions of Co/Al₂O₃/NiFe (J₁) and La_0.7Ca_0.3MnO₃/Al₂O₃/La_0.7Ca_0.3MnO₃ (J₂) were prepared to compare their tunneling magnetoresistance (TMR) in consideration of interfacial state effects. The structural and transport properties of the layered samples were characterized by X-ray and magnetic measurements, showing indeed an interfacial state dependence. The influences such as from a CoO sublayer in J₁ and from interfacial coherence in J₂ were discussed. The largest TMR observed amounts to 16% (290 K) for J₁ and 65% (40 K) for J₂.     

Electrical conduction in Fe2O3 and Cr2O3

The influence of some impurities on the conduction properties of Cr₂O₃ and Fe₂O₃ are examined and contrasted. A mechanism is proposed to account for the effect of Ti in Cr₂O₃.